DE3486462D1 - Lichtelektrischer Wandler - Google Patents

Lichtelektrischer Wandler

Info

Publication number
DE3486462D1
DE3486462D1 DE3486462T DE3486462T DE3486462D1 DE 3486462 D1 DE3486462 D1 DE 3486462D1 DE 3486462 T DE3486462 T DE 3486462T DE 3486462 T DE3486462 T DE 3486462T DE 3486462 D1 DE3486462 D1 DE 3486462D1
Authority
DE
Germany
Prior art keywords
photoelectric converter
photoelectric
converter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE3486462T
Other languages
English (en)
Other versions
DE3486462T2 (de
Inventor
Tadahiro Ohmi
Nobuyoshi Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP58120756A external-priority patent/JPS6012764A/ja
Priority claimed from JP58120753A external-priority patent/JPS6012761A/ja
Priority claimed from JP58120751A external-priority patent/JPS6012759A/ja
Priority claimed from JP58120754A external-priority patent/JPS6012762A/ja
Priority claimed from JP58120755A external-priority patent/JPS6012763A/ja
Priority claimed from JP58120757A external-priority patent/JPS6012765A/ja
Priority claimed from JP58120752A external-priority patent/JPS6012760A/ja
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE3486462D1 publication Critical patent/DE3486462D1/de
Application granted granted Critical
Publication of DE3486462T2 publication Critical patent/DE3486462T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/11—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors
    • H01L31/1105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors the device being a bipolar phototransistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14681—Bipolar transistor imagers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)
DE3486462T 1983-07-02 1984-07-02 Lichtelektrischer Wandler Expired - Lifetime DE3486462T2 (de)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP58120753A JPS6012761A (ja) 1983-07-02 1983-07-02 光電変換装置
JP58120751A JPS6012759A (ja) 1983-07-02 1983-07-02 光電変換装置及びその光電変換方法
JP58120754A JPS6012762A (ja) 1983-07-02 1983-07-02 光電変換装置
JP58120755A JPS6012763A (ja) 1983-07-02 1983-07-02 光電変換装置
JP58120757A JPS6012765A (ja) 1983-07-02 1983-07-02 光電変換装置
JP58120756A JPS6012764A (ja) 1983-07-02 1983-07-02 光電変換装置
JP58120752A JPS6012760A (ja) 1983-07-02 1983-07-02 光電変換装置及び光電変換方法

Publications (2)

Publication Number Publication Date
DE3486462D1 true DE3486462D1 (de) 1998-01-29
DE3486462T2 DE3486462T2 (de) 1998-04-16

Family

ID=27565888

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3486462T Expired - Lifetime DE3486462T2 (de) 1983-07-02 1984-07-02 Lichtelektrischer Wandler

Country Status (4)

Country Link
US (4) US4686554A (de)
EP (4) EP0391502A3 (de)
CA (1) CA1257922A (de)
DE (1) DE3486462T2 (de)

Families Citing this family (103)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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US4686554A (en) * 1983-07-02 1987-08-11 Canon Kabushiki Kaisha Photoelectric converter
EP0179828B1 (de) * 1984-04-25 1989-07-19 KEMMER, Josef, Dr. Grossflächiger halbleiterstrahlungsdetektor niedriger kapazität
US4794443A (en) * 1984-05-28 1988-12-27 Canon Kabushiki Kaisha Semiconductor device and process for producing same
USRE34309E (en) * 1984-12-26 1993-07-13 Canon Kabushiki Kaisha Image sensor device having plural photoelectric converting elements
EP0187047B1 (de) * 1984-12-26 1992-03-04 Canon Kabushiki Kaisha Bildsensoranordnung
CA1270058A (en) * 1984-12-28 1990-06-05 Seiji Hashimoto Image sensing apparatus
JPH0646655B2 (ja) * 1985-04-01 1994-06-15 キヤノン株式会社 固体撮像装置
US5309013A (en) * 1985-04-30 1994-05-03 Canon Kabushiki Kaisha Photoelectric conversion device
JPH0624233B2 (ja) * 1985-04-30 1994-03-30 キヤノン株式会社 光電変換装置
JPH0719882B2 (ja) * 1985-05-01 1995-03-06 キヤノン株式会社 光電変換装置
JPS61252659A (ja) * 1985-05-01 1986-11-10 Canon Inc 光電変換装置
JPH0719881B2 (ja) * 1985-05-01 1995-03-06 キヤノン株式会社 光電変換装置
JPH0760888B2 (ja) * 1985-06-12 1995-06-28 キヤノン株式会社 光電変換装置
JPH0714041B2 (ja) * 1985-06-12 1995-02-15 キヤノン株式会社 光電変換装置
US4907074A (en) * 1985-10-31 1990-03-06 Canon Kabushiki Kaisha Image pickup apparatus having color separation filters and forming line-sequential luminance and color-difference signals
CA1289242C (en) * 1985-11-13 1991-09-17 Shigetoshi Sugawa Device and method of photoelectrically converting light into electrical signal
JPH0654957B2 (ja) * 1985-11-13 1994-07-20 キヤノン株式会社 光電変換装置
US5771070A (en) * 1985-11-15 1998-06-23 Canon Kabushiki Kaisha Solid state image pickup apparatus removing noise from the photoelectric converted signal
US4914519A (en) * 1986-09-19 1990-04-03 Canon Kabushiki Kaisha Apparatus for eliminating noise in a solid-state image pickup device
JPH084127B2 (ja) * 1986-09-30 1996-01-17 キヤノン株式会社 光電変換装置
ATE163498T1 (de) * 1985-11-15 1998-03-15 Canon Kk Photoelektrische wandlervorrichtung
US5737016A (en) * 1985-11-15 1998-04-07 Canon Kabushiki Kaisha Solid state image pickup apparatus for reducing noise
EP0232148B1 (de) * 1986-02-04 1994-08-03 Canon Kabushiki Kaisha Photoelektrisches Umwandlungselement und Verfahren zu seiner Herstellung
EP0234909A3 (de) * 1986-02-26 1990-01-24 Matsushita Electric Industrial Co., Ltd. Bildsensor
JP2505754B2 (ja) * 1986-07-11 1996-06-12 キヤノン株式会社 光電変換装置の製造方法
JPH0812906B2 (ja) * 1986-07-11 1996-02-07 キヤノン株式会社 光電変換装置の製造方法
JPH0812905B2 (ja) * 1986-07-11 1996-02-07 キヤノン株式会社 光電変換装置及びその製造方法
JPH0644619B2 (ja) * 1986-07-17 1994-06-08 キヤノン株式会社 光電変換装置
JP2505767B2 (ja) * 1986-09-18 1996-06-12 キヤノン株式会社 光電変換装置の製造方法
JPH07120767B2 (ja) * 1986-09-19 1995-12-20 キヤノン株式会社 光電変換装置
US4835404A (en) * 1986-09-19 1989-05-30 Canon Kabushiki Kaisha Photoelectric converting apparatus with a switching circuit and a resetting circuit for reading and resetting a plurality of lines sensors
US4866293A (en) * 1986-12-09 1989-09-12 Canon Kabushiki Kaisha Photoelectric converting apparatus to prevent the outflow of excess carriers
US5126814A (en) * 1986-12-09 1992-06-30 Tokyo, Japan Canon Kabushiki Kaisha Photoelectric converter with doped capacitor region
DE3750329D1 (de) * 1986-12-18 1994-09-08 Canon Kk Signalausleseschaltung.
US4879470A (en) * 1987-01-16 1989-11-07 Canon Kabushiki Kaisha Photoelectric converting apparatus having carrier eliminating means
EP0277016B1 (de) * 1987-01-29 1998-04-15 Canon Kabushiki Kaisha Photovoltaischer Wandler
US4866291A (en) * 1987-06-30 1989-09-12 Canon Kabushiki Kaisha Photosensor with charge storage unit and switch unit formed on a single-crystal semiconductor film
US5204544A (en) * 1987-07-03 1993-04-20 Canon Kabushiki Kaisha Photoelectric conversion device with stabilizing electrode
JPH02275670A (ja) * 1989-01-18 1990-11-09 Canon Inc 光電変換装置および画像読取装置
DE3926200A1 (de) * 1989-08-08 1991-02-14 Siemens Ag Lichtsteuerbares halbleiterbauelement mit einem feldeffekttransistor
US5272345A (en) * 1989-09-22 1993-12-21 Ada Technologies, Inc. Calibration method and apparatus for measuring the concentration of components in a fluid
US5288651A (en) * 1989-11-09 1994-02-22 Kabushiki Kaisha Toshiba Method of making semiconductor integrated circuit device including bipolar transistors, MOS FETs and CCD
US5241169A (en) * 1989-11-21 1993-08-31 Canon Kabushiki Kaisha Photoelectric conversion device having an improved control electrode structure and apparatus equipped with same
JP2810526B2 (ja) * 1989-11-21 1998-10-15 キヤノン株式会社 光電変換装置及び該装置を搭載した装置
US5101252A (en) * 1989-12-14 1992-03-31 Canon Kabushiki Kaisha Photoelectric converting device with improved resetting transistor and information processing apparatus utilizing the same
ES2103778T3 (es) * 1990-05-31 1997-10-01 Canon Kk Metodo para la fabricacion de un dispositivo de memoria semiconductor, que tiene un condensador.
US5288988A (en) * 1990-08-07 1994-02-22 Canon Kabushiki Kaisha Photoconversion device having reset control circuitry
DE69133418T2 (de) * 1990-08-07 2005-08-18 Canon K.K. Photoumwandlerschaltung
JP2991354B2 (ja) * 1990-11-07 1999-12-20 キヤノン株式会社 画像読取装置およびそれを備えた画像情報処理装置
US5262873A (en) * 1990-11-07 1993-11-16 Canon Kabushiki Kaisha Image signal correcting in image data processing requiring only small memory capacity
US5281803A (en) * 1990-11-26 1994-01-25 Canon Kabushiki Kaisha Image sensor and information processing apparatus
CA2056087C (en) * 1990-11-27 1998-01-27 Masakazu Morishita Photoelectric converting device and information processing apparatus employing the same
US5260592A (en) * 1991-02-19 1993-11-09 Synaptics, Incorporated Integrating photosensor and imaging system having wide dynamic range with varactors
US5324958A (en) * 1991-02-19 1994-06-28 Synaptics, Incorporated Integrating imaging systgem having wide dynamic range with sample/hold circuits
JP2662105B2 (ja) * 1991-04-08 1997-10-08 キヤノン株式会社 密着型センサおよびイメージスキャナならびにファクシミリ
EP0542152B1 (de) * 1991-11-08 1999-07-14 Canon Kabushiki Kaisha Schichtförmiger Festkörperbildsensor und Verfahren zu seiner Herstellung
EP0543391B1 (de) * 1991-11-22 2000-08-30 Canon Kabushiki Kaisha Photoelektrischer Wandler und Steuerverfahren dafür
JPH05183818A (ja) * 1991-12-26 1993-07-23 Sony Corp 固体撮像装置
JP2768453B2 (ja) * 1992-03-03 1998-06-25 キヤノン株式会社 固体撮像装置及びそれを用いた装置
US5406332A (en) * 1992-03-06 1995-04-11 Canon Kabushiki Kaisha Photoelectric converting device
JP3356816B2 (ja) * 1992-03-24 2002-12-16 セイコーインスツルメンツ株式会社 半導体光電気変換装置
KR960014305B1 (ko) * 1992-04-15 1996-10-15 마쯔시다멘기산교 가부시기가이샤 팩시밀리장치
DE69324406T2 (de) * 1992-06-11 1999-11-11 Canon K.K., Tokio/Tokyo Kontaktbildsensor, Verfahren zur dessen Herstellung und Informationsverarbeitungsgerät
US5386108A (en) * 1992-06-25 1995-01-31 Canon Kabushiki Kaisha Photoelectric conversion device for amplifying and outputting photoelectrically converted signal, and a method thereof
US5774180A (en) * 1992-12-04 1998-06-30 Fuji Xerox Co., Ltd. Image sensor capable of producing an image signal free from an afterimage
US5453611A (en) * 1993-01-01 1995-09-26 Canon Kabushiki Kaisha Solid-state image pickup device with a plurality of photoelectric conversion elements on a common semiconductor chip
EP0606654B1 (de) 1993-01-01 2000-08-09 Canon Kabushiki Kaisha Bildlesevorrichtung
US5724152A (en) * 1993-01-01 1998-03-03 Canon Kabushiki Kaisha Image reading apparatus and image processing apparatus for reading optical information of visible and non-visible light
EP0616464B1 (de) * 1993-03-15 1999-06-02 Canon Kabushiki Kaisha Signalprozessor
JPH0843716A (ja) 1994-07-28 1996-02-16 Canon Inc 光電変換素子の蓄積制御装置、焦点検出装置、及びカメラ
JP3774499B2 (ja) 1996-01-24 2006-05-17 キヤノン株式会社 光電変換装置
US5769384A (en) * 1996-01-25 1998-06-23 Hewlett-Packard Company Low differential light level photoreceptors
JP3984676B2 (ja) * 1996-03-26 2007-10-03 キヤノン株式会社 光電変換装置、及び該装置を有するシステム
US5838176A (en) * 1996-07-11 1998-11-17 Foveonics, Inc. Correlated double sampling circuit
JP2888207B2 (ja) * 1996-10-01 1999-05-10 日本電気株式会社 固体撮像装置及びその駆動方法
JP3630894B2 (ja) * 1996-12-24 2005-03-23 株式会社半導体エネルギー研究所 電荷転送半導体装置およびその作製方法並びにイメージセンサ
US5869857A (en) * 1997-04-07 1999-02-09 Chen; Pao-Jung CMOS photodetectors with wide range operating region
FR2762741A1 (fr) * 1997-04-25 1998-10-30 Thomson Tubes Electroniques Procede de commande d'un detecteur d'image offrant une protection contre les eblouissements, et detecteur d'image mettant en oeuvre le procede
JP3683398B2 (ja) * 1997-12-22 2005-08-17 株式会社ルネサステクノロジ 半導体集積回路及びその製造方法
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JP4661088B2 (ja) * 2004-06-01 2011-03-30 住友化学株式会社 ｐｎ接合を有する化合物半導体基板の製造方法
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KR100688589B1 (ko) * 2006-03-10 2007-03-02 삼성전자주식회사 필 팩터가 증대된 이미지 센서 및 그의 제조방법
JP5157259B2 (ja) 2007-05-29 2013-03-06 ソニー株式会社 固体撮像素子及び撮像装置
JP2009033043A (ja) * 2007-07-30 2009-02-12 Panasonic Corp 光半導体装置
US8869846B2 (en) * 2008-05-09 2014-10-28 Gerdes Gmbh Neck end for a filler neck
JP2010098189A (ja) * 2008-10-17 2010-04-30 Toshiba Corp 半導体装置
US8409908B2 (en) * 2009-07-30 2013-04-02 General Electric Company Apparatus for reducing photodiode thermal gain coefficient and method of making same
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US9230652B2 (en) * 2012-03-08 2016-01-05 California Institute Of Technology Flash memories using minimum push up, multi-cell and multi-permutation schemes for data storage
TWI657480B (zh) * 2014-06-25 2019-04-21 環球晶圓股份有限公司 具壓應力之矽基板及其製造方法
US9772935B2 (en) 2014-09-16 2017-09-26 Empire Technology Development Llc Data storage based on rank modulation in single-level flash memory
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Also Published As

Publication number Publication date
US4686554A (en) 1987-08-11
EP0252530A2 (de) 1988-01-13
EP0252530A3 (de) 1988-08-10
EP0391502A2 (de) 1990-10-10
CA1257922A (en) 1989-07-25
EP0391502A3 (de) 1991-03-27
DE3486462T2 (de) 1998-04-16
US4916512A (en) 1990-04-10
US5128735A (en) 1992-07-07
EP0132076B1 (de) 1997-12-17
US4791469A (en) 1988-12-13
EP0252529A2 (de) 1988-01-13
EP0132076A1 (de) 1985-01-23
EP0252529A3 (de) 1988-08-10

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