DE3280267D1 - Halbleiterumwandler photoelektrischer. - Google Patents

Halbleiterumwandler photoelektrischer.

Info

Publication number
DE3280267D1
DE3280267D1 DE8282903476T DE3280267T DE3280267D1 DE 3280267 D1 DE3280267 D1 DE 3280267D1 DE 8282903476 T DE8282903476 T DE 8282903476T DE 3280267 T DE3280267 T DE 3280267T DE 3280267 D1 DE3280267 D1 DE 3280267D1
Authority
DE
Germany
Prior art keywords
semiconductor converter
photoelectric
converter photoelectric
semiconductor
converter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8282903476T
Other languages
English (en)
Inventor
Jun-Ichi Nishizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Research Foundation
Original Assignee
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation filed Critical Semiconductor Research Foundation
Application granted granted Critical
Publication of DE3280267D1 publication Critical patent/DE3280267D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
    • H01L31/1124—Devices with PN homojunction gate
    • H01L31/1126—Devices with PN homojunction gate the device being a field-effect phototransistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14679—Junction field effect transistor [JFET] imagers; static induction transistor [SIT] imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7391—Gated diode structures
    • H01L29/7392—Gated diode structures with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/7722—Field effect transistors using static field induced regions, e.g. SIT, PBT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
    • H01L31/1124—Devices with PN homojunction gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Junction Field-Effect Transistors (AREA)
DE8282903476T 1981-11-30 1982-11-30 Halbleiterumwandler photoelektrischer. Expired - Lifetime DE3280267D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP56192417A JPH077844B2 (ja) 1981-11-30 1981-11-30 静電誘導型半導体光電変換装置
PCT/JP1982/000457 WO1983002037A1 (en) 1981-11-30 1982-11-30 Semiconductor photoelectric converter

Publications (1)

Publication Number Publication Date
DE3280267D1 true DE3280267D1 (de) 1990-12-13

Family

ID=16290968

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8282903476T Expired - Lifetime DE3280267D1 (de) 1981-11-30 1982-11-30 Halbleiterumwandler photoelektrischer.

Country Status (5)

Country Link
US (1) US4608587A (de)
EP (1) EP0094973B1 (de)
JP (1) JPH077844B2 (de)
DE (1) DE3280267D1 (de)
WO (1) WO1983002037A1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5943581A (ja) * 1982-09-03 1984-03-10 Junichi Nishizawa 半導体光電変換装置
JPS59107578A (ja) * 1982-12-11 1984-06-21 Junichi Nishizawa 半導体光電変換装置
JPH0779159B2 (ja) * 1984-03-22 1995-08-23 潤一 西澤 光トリガ・光クエンチ可能なサイリスタ装置
JPH07120765B2 (ja) * 1985-12-20 1995-12-20 キヤノン株式会社 センサ装置、光導電型センサの駆動方法及び駆動装置
US6407512B1 (en) * 1999-11-19 2002-06-18 Fuji Photo Film Co., Ltd. Flashing device of an automatic light-regulation type
DE102005007358B4 (de) * 2005-02-17 2008-05-08 Austriamicrosystems Ag Lichtempfindliches Bauelement
RU2316848C1 (ru) * 2006-06-01 2008-02-10 Садыгов Зираддин Якуб-оглы Микроканальный лавинный фотодиод
JP5401203B2 (ja) * 2009-08-07 2014-01-29 株式会社日立製作所 半導体受光装置及びその製造方法
US8963274B2 (en) * 2013-03-15 2015-02-24 Sensors Unlimited, Inc. Epitaxial structure for vertically integrated charge transfer gate technology in optoelectronic materials

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3366802A (en) * 1965-04-06 1968-01-30 Fairchild Camera Instr Co Field effect transistor photosensitive modulator
GB1444543A (en) * 1972-09-22 1976-08-04 Mullard Ltd Solid state image display and/or conversion device
GB1444541A (en) * 1972-09-22 1976-08-04 Mullard Ltd Radiation sensitive solid state devices
JPS5038531A (de) * 1973-08-07 1975-04-10
JPS5061194A (de) * 1973-09-27 1975-05-26
JPS5368178A (en) * 1976-11-30 1978-06-17 Handotai Kenkyu Shinkokai Fet transistor
JPS6020910B2 (ja) * 1977-07-07 1985-05-24 財団法人半導体研究振興会 静電誘導トランジスタ及び半導体集積回路
US4284997A (en) * 1977-07-07 1981-08-18 Zaidan Hojin Handotai Kenkyu Shinkokai Static induction transistor and its applied devices
JPS5449086A (en) * 1977-09-26 1979-04-18 Sharp Corp Field effect semiconductor device
US4427990A (en) * 1978-07-14 1984-01-24 Zaidan Hojin Handotai Kenkyu Shinkokai Semiconductor photo-electric converter with insulated gate over p-n charge storage region
JPS5513924A (en) * 1978-07-14 1980-01-31 Semiconductor Res Found Semiconductor photoelectronic conversion device

Also Published As

Publication number Publication date
EP0094973A1 (de) 1983-11-30
WO1983002037A1 (en) 1983-06-09
JPH077844B2 (ja) 1995-01-30
EP0094973B1 (de) 1990-11-07
US4608587A (en) 1986-08-26
JPS5893386A (ja) 1983-06-03
EP0094973A4 (de) 1986-01-07

Similar Documents

Publication Publication Date Title
DE3382709D1 (de) Fotovoltaischer wandler.
DE3788393T2 (de) Photoelektrischer Umformer.
DE3581561D1 (de) Waermebestaendiger photoelektrischer duennschicht-konverter.
DE3751242D1 (de) Photoelektrischer Wandler.
DE3382499D1 (de) Fotowandlerschaltung.
DE3486462D1 (de) Lichtelektrischer Wandler
DE3168333D1 (en) Semiconductor photoelectric converter
DE3751285D1 (de) Fotoelektrische Umwandlungsvorrichtung.
DE3582374D1 (de) Halbleiter-druckwandler.
ES517864A0 (es) Dispositivo fotovoltaico pindesilicio amorfo.
NL192900B (nl) Foto-elektrische halfgeleideromzetter.
DE3770720D1 (de) Halbleiterkamera.
NL188125C (nl) Halfgeleiderfotodiode.
DE3280111D1 (de) Halbleiter-gleichrichterdiode.
DE3688633T2 (de) Photoelektrischer Wandler.
DE3280176D1 (de) Photoelektrischer halbleiterumwandler.
DE3788481D1 (de) Photoelektrischer Umformer.
DE3851275D1 (de) Photoelektrischer Umsetzer.
DE3779765D1 (de) Metal-halbleiter-metal photodiode.
DE3381607D1 (de) Photoelektrischer umwandler mit halbleiter.
DE3687151D1 (de) Photoelektrischer wandler.
DE3266915D1 (de) Semiconductor rectifier
DE3280267D1 (de) Halbleiterumwandler photoelektrischer.
NO831158L (no) Omretter.
DE3382695T2 (de) Fotovoltaischer wandler.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition