DE3280111D1 - Halbleiter-gleichrichterdiode. - Google Patents

Halbleiter-gleichrichterdiode.

Info

Publication number
DE3280111D1
DE3280111D1 DE8282109195T DE3280111T DE3280111D1 DE 3280111 D1 DE3280111 D1 DE 3280111D1 DE 8282109195 T DE8282109195 T DE 8282109195T DE 3280111 T DE3280111 T DE 3280111T DE 3280111 D1 DE3280111 D1 DE 3280111D1
Authority
DE
Germany
Prior art keywords
rectifier diode
semiconductor rectifier
semiconductor
diode
rectifier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8282109195T
Other languages
English (en)
Inventor
Yoshio Terasawa
Yoshiteru Shimizu
Masayoshi Naito
Susumu Murakami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE3280111D1 publication Critical patent/DE3280111D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0688—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions characterised by the particular shape of a junction between semiconductor regions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
DE8282109195T 1981-10-07 1982-10-05 Halbleiter-gleichrichterdiode. Expired - Lifetime DE3280111D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15875881A JPS5860577A (ja) 1981-10-07 1981-10-07 半導体装置

Publications (1)

Publication Number Publication Date
DE3280111D1 true DE3280111D1 (de) 1990-03-15

Family

ID=15678695

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8282109195T Expired - Lifetime DE3280111D1 (de) 1981-10-07 1982-10-05 Halbleiter-gleichrichterdiode.

Country Status (3)

Country Link
EP (1) EP0077004B1 (de)
JP (1) JPS5860577A (de)
DE (1) DE3280111D1 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5929469A (ja) * 1982-08-11 1984-02-16 Hitachi Ltd 半導体装置
JPS60140768A (ja) * 1983-12-28 1985-07-25 Toyo Electric Mfg Co Ltd 整流素子
FR2578101B1 (fr) * 1985-02-26 1987-10-09 Thomson Csf Diode hyperfrequence de type pin a transitions abruptes
JPS62115880A (ja) * 1985-11-15 1987-05-27 Shindengen Electric Mfg Co Ltd Ｐｎ接合素子
DE3631136A1 (de) * 1986-09-12 1988-03-24 Siemens Ag Diode mit weichem abrissverhalten
US5166760A (en) * 1990-02-28 1992-11-24 Hitachi, Ltd. Semiconductor Schottky barrier device with pn junctions
US5278443A (en) * 1990-02-28 1994-01-11 Hitachi, Ltd. Composite semiconductor device with Schottky and pn junctions
JP2590284B2 (ja) * 1990-02-28 1997-03-12 株式会社日立製作所 半導体装置及びその製造方法
DE4201183A1 (de) * 1992-01-17 1993-07-22 Eupec Gmbh & Co Kg Leistungsdiode
JP2719295B2 (ja) * 1993-04-09 1998-02-25 リコー応用電子研究所株式会社 半導体整流装置
JP4857484B2 (ja) * 2001-04-20 2012-01-18 富士電機株式会社 半導体装置およびその製造方法
JP2003338620A (ja) * 2002-05-22 2003-11-28 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2005191227A (ja) * 2003-12-25 2005-07-14 Sanyo Electric Co Ltd 半導体装置
JP5306392B2 (ja) * 2011-03-03 2013-10-02 株式会社東芝 半導体整流装置
JP2013243186A (ja) * 2012-05-18 2013-12-05 Origin Electric Co Ltd 半導体素子
JP5865860B2 (ja) 2013-03-25 2016-02-17 株式会社東芝 半導体装置
CN110534583B (zh) * 2019-08-01 2023-03-28 山东天岳电子科技有限公司 一种肖特基二极管及其制备方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2457106A1 (de) * 1974-12-03 1976-06-10 Siemens Ag Thyristor
JPS5935183B2 (ja) * 1975-08-20 1984-08-27 サンケイ電気 （株） シヨツトキバリア半導体装置
DE2807785A1 (de) * 1978-02-23 1979-08-30 Siemens Ag Digitales nachrichtenuebertragungssystem
GB2050694B (en) * 1979-05-07 1983-09-28 Nippon Telegraph & Telephone Electrode structure for a semiconductor device
US4278476A (en) * 1979-12-05 1981-07-14 Westinghouse Electric Corp. Method of making ion implanted reverse-conducting thyristor

Also Published As

Publication number Publication date
EP0077004A3 (en) 1985-09-18
EP0077004B1 (de) 1990-02-07
EP0077004A2 (de) 1983-04-20
JPS5860577A (ja) 1983-04-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee