DE3374627D1 - Semiconductor rectifier diode - Google Patents

Semiconductor rectifier diode

Info

Publication number
DE3374627D1
DE3374627D1 DE8383107656T DE3374627T DE3374627D1 DE 3374627 D1 DE3374627 D1 DE 3374627D1 DE 8383107656 T DE8383107656 T DE 8383107656T DE 3374627 T DE3374627 T DE 3374627T DE 3374627 D1 DE3374627 D1 DE 3374627D1
Authority
DE
Germany
Prior art keywords
rectifier diode
semiconductor rectifier
semiconductor
diode
rectifier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8383107656T
Other languages
English (en)
Inventor
Masayoshi Naito
Yoshiteru Shimizu
Yoshio Terasawa
Susumu Murakami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE3374627D1 publication Critical patent/DE3374627D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0688—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions characterised by the particular shape of a junction between semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
DE8383107656T 1982-08-11 1983-08-03 Semiconductor rectifier diode Expired DE3374627D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13858482A JPS5929469A (ja) 1982-08-11 1982-08-11 半導体装置

Publications (1)

Publication Number Publication Date
DE3374627D1 true DE3374627D1 (de) 1987-12-23

Family

ID=15225529

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8383107656T Expired DE3374627D1 (de) 1982-08-11 1983-08-03 Semiconductor rectifier diode

Country Status (3)

Country Link
EP (1) EP0103138B1 (de)
JP (1) JPS5929469A (de)
DE (1) DE3374627D1 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6226184A (ja) * 1985-07-26 1987-02-04 佐藤　政太郎 車両用ブレ−キ装置
DE3823795A1 (de) * 1988-07-14 1990-01-18 Semikron Elektronik Gmbh Schnelle leistungsdiode
JP2667477B2 (ja) * 1988-12-02 1997-10-27 株式会社東芝 ショットキーバリアダイオード
DE4135259C1 (de) * 1991-10-25 1993-01-07 Semikron Elektronik Gmbh, 8500 Nuernberg, De
DE4135258C2 (de) * 1991-10-25 1996-05-02 Semikron Elektronik Gmbh Schnelle Leistungsdiode
DE4201183A1 (de) * 1992-01-17 1993-07-22 Eupec Gmbh & Co Kg Leistungsdiode
DE4236557C2 (de) * 1992-10-29 2002-08-01 Semikron Elektronik Gmbh Leistungs- Halbleiterbauelement
DE4336663A1 (de) * 1993-10-27 1995-05-04 Daimler Benz Ag Verfahren zum Herstellen einer Zonenfolge und mittels dieses Verfahrens herstellbare Diodenstruktur
DE4342482C2 (de) * 1993-12-13 1995-11-30 Siemens Ag Schnelle Leistungshalbleiterbauelemente
JP3994443B2 (ja) * 1995-05-18 2007-10-17 三菱電機株式会社 ダイオード及びその製造方法
US6737731B1 (en) 2000-06-26 2004-05-18 Fairchild Semiconductor Corporation Soft recovery power diode
US7199442B2 (en) * 2004-07-15 2007-04-03 Fairchild Semiconductor Corporation Schottky diode structure to reduce capacitance and switching losses and method of making same
DE102005032074B4 (de) * 2005-07-08 2007-07-26 Infineon Technologies Austria Ag Halbleiterbauelement mit Feldstopp
DE102017131354A1 (de) 2017-12-27 2019-06-27 Infineon Technologies Ag Ein Halbleiterbauelement mit breitem Bandabstand und ein Verfahren zum Bilden eines Halbleiterbauelements mit breitem Bandabstand

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2288390A1 (fr) * 1974-10-18 1976-05-14 Thomson Csf Procede de realisation d'une structure semi-conductrice pour hyperfrequence et composant electronique ainsi obtenu
GB2050694B (en) * 1979-05-07 1983-09-28 Nippon Telegraph & Telephone Electrode structure for a semiconductor device
JPS5839070A (ja) * 1981-08-31 1983-03-07 Toshiba Corp 半導体装置
JPS5860577A (ja) * 1981-10-07 1983-04-11 Hitachi Ltd 半導体装置
FR2524715A1 (fr) * 1982-03-30 1983-10-07 Thomson Csf Diode rapide

Also Published As

Publication number Publication date
JPS5929469A (ja) 1984-02-16
EP0103138A3 (en) 1985-09-11
EP0103138A2 (de) 1984-03-21
EP0103138B1 (de) 1987-11-19

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee