FR2288390A1 - Procede de realisation d'une structure semi-conductrice pour hyperfrequence et composant electronique ainsi obtenu - Google Patents

Procede de realisation d'une structure semi-conductrice pour hyperfrequence et composant electronique ainsi obtenu

Info

Publication number
FR2288390A1
FR2288390A1 FR7435143A FR7435143A FR2288390A1 FR 2288390 A1 FR2288390 A1 FR 2288390A1 FR 7435143 A FR7435143 A FR 7435143A FR 7435143 A FR7435143 A FR 7435143A FR 2288390 A1 FR2288390 A1 FR 2288390A1
Authority
FR
France
Prior art keywords
hyperfrequency
semi
making
electronic component
conductive structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7435143A
Other languages
English (en)
Other versions
FR2288390B1 (fr
Inventor
Paul-Cyril Moutou
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR7435143A priority Critical patent/FR2288390A1/fr
Priority to US05/622,455 priority patent/US4045252A/en
Priority to GB42824/75A priority patent/GB1524709A/en
Priority to DE19752546673 priority patent/DE2546673A1/de
Priority to JP50125219A priority patent/JPS5166772A/ja
Publication of FR2288390A1 publication Critical patent/FR2288390A1/fr
Application granted granted Critical
Publication of FR2288390B1 publication Critical patent/FR2288390B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
    • H01L21/2656—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds characterised by the implantation of both electrically active and inactive species in the same semiconductor region to be doped
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
    • H01L21/26546—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/868—PIN diodes
FR7435143A 1974-10-18 1974-10-18 Procede de realisation d'une structure semi-conductrice pour hyperfrequence et composant electronique ainsi obtenu Granted FR2288390A1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR7435143A FR2288390A1 (fr) 1974-10-18 1974-10-18 Procede de realisation d'une structure semi-conductrice pour hyperfrequence et composant electronique ainsi obtenu
US05/622,455 US4045252A (en) 1974-10-18 1975-10-15 Method of manufacturing a semiconductor structure for microwave operation, including a very thin insulating or weakly doped layer
GB42824/75A GB1524709A (en) 1974-10-18 1975-10-17 Method of manufacturing a semiconductor structure for microwave operation including a thin insulating or weakly doped layer
DE19752546673 DE2546673A1 (de) 1974-10-18 1975-10-17 Verfahren zur herstellung einer halbleiterstruktur
JP50125219A JPS5166772A (fr) 1974-10-18 1975-10-17

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7435143A FR2288390A1 (fr) 1974-10-18 1974-10-18 Procede de realisation d'une structure semi-conductrice pour hyperfrequence et composant electronique ainsi obtenu

Publications (2)

Publication Number Publication Date
FR2288390A1 true FR2288390A1 (fr) 1976-05-14
FR2288390B1 FR2288390B1 (fr) 1978-07-13

Family

ID=9144265

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7435143A Granted FR2288390A1 (fr) 1974-10-18 1974-10-18 Procede de realisation d'une structure semi-conductrice pour hyperfrequence et composant electronique ainsi obtenu

Country Status (5)

Country Link
US (1) US4045252A (fr)
JP (1) JPS5166772A (fr)
DE (1) DE2546673A1 (fr)
FR (1) FR2288390A1 (fr)
GB (1) GB1524709A (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0103138A2 (fr) * 1982-08-11 1984-03-21 Hitachi, Ltd. Diode redresseuse semi-conductrice
EP0122598A2 (fr) * 1983-04-13 1984-10-24 Hitachi, Ltd. Diode rapide
CH673352A5 (fr) * 1987-03-30 1990-02-28 Bbc Brown Boveri & Cie
EP2996152A1 (fr) * 2014-09-15 2016-03-16 ABB Technology AG Diode de puissance à haute fréquence et sa méthode de manufacture

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4326211A (en) * 1977-09-01 1982-04-20 U.S. Philips Corporation N+PP-PP-P+ Avalanche photodiode
DE3276979D1 (en) * 1981-05-06 1987-09-17 Univ Illinois Method of forming wide bandgap region within multilayer semiconductors
US4954864A (en) * 1988-12-13 1990-09-04 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Millimeter-wave monolithic diode-grid frequency multiplier
FR2953062B1 (fr) * 2009-11-24 2011-12-16 St Microelectronics Tours Sas Diode de protection bidirectionnelle basse tension

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1037199A (en) * 1964-07-14 1966-07-27 Standard Telephones Cables Ltd Improvements in or relating to transistor manufacture
BE759057A (fr) * 1969-11-19 1971-05-17 Philips Nv
US3649369A (en) * 1970-03-09 1972-03-14 Hughes Aircraft Co Method for making n-type layers in gallium arsenide at room temperatures
US3856578A (en) * 1972-03-13 1974-12-24 Bell Telephone Labor Inc Bipolar transistors and method of manufacture
US3904449A (en) * 1974-05-09 1975-09-09 Bell Telephone Labor Inc Growth technique for high efficiency gallium arsenide impatt diodes

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NEANT *

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0103138A2 (fr) * 1982-08-11 1984-03-21 Hitachi, Ltd. Diode redresseuse semi-conductrice
EP0103138A3 (en) * 1982-08-11 1985-09-11 Hitachi, Ltd. Semiconductor rectifier diode
EP0122598A2 (fr) * 1983-04-13 1984-10-24 Hitachi, Ltd. Diode rapide
EP0122598A3 (en) * 1983-04-13 1985-09-18 Hitachi, Ltd. High speed diode
CH673352A5 (fr) * 1987-03-30 1990-02-28 Bbc Brown Boveri & Cie
EP2996152A1 (fr) * 2014-09-15 2016-03-16 ABB Technology AG Diode de puissance à haute fréquence et sa méthode de manufacture
US9553210B2 (en) 2014-09-15 2017-01-24 Abb Schweiz Ag High frequency power diode and method for manufacturing the same
RU2684921C2 (ru) * 2014-09-15 2019-04-16 Абб Швайц Аг Высокочастотный силовой диод и способ его изготовления

Also Published As

Publication number Publication date
DE2546673A1 (de) 1976-04-29
GB1524709A (en) 1978-09-13
US4045252A (en) 1977-08-30
JPS5166772A (fr) 1976-06-09
FR2288390B1 (fr) 1978-07-13

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Legal Events

Date Code Title Description
ST Notification of lapse