DE3382709T2 - Fotovoltaischer Wandler. - Google Patents

Fotovoltaischer Wandler.

Info

Publication number
DE3382709T2
DE3382709T2 DE83307191T DE3382709T DE3382709T2 DE 3382709 T2 DE3382709 T2 DE 3382709T2 DE 83307191 T DE83307191 T DE 83307191T DE 3382709 T DE3382709 T DE 3382709T DE 3382709 T2 DE3382709 T2 DE 3382709T2
Authority
DE
Germany
Prior art keywords
photovoltaic converter
photovoltaic
converter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE83307191T
Other languages
English (en)
Other versions
DE3382709D1 (de
Inventor
Shunpei C O Semicondu Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP57206806A external-priority patent/JPS5994885A/ja
Priority claimed from JP57206809A external-priority patent/JPS5996780A/ja
Priority claimed from JP58028211A external-priority patent/JPS59154080A/ja
Priority claimed from JP58075713A external-priority patent/JPS59201471A/ja
Priority claimed from JP58204443A external-priority patent/JPS6095980A/ja
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of DE3382709D1 publication Critical patent/DE3382709D1/de
Application granted granted Critical
Publication of DE3382709T2 publication Critical patent/DE3382709T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1446—Devices controlled by radiation in a repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H01L31/0465—PV modules composed of a plurality of thin film solar cells deposited on the same substrate comprising particular structures for the electrical interconnection of adjacent PV cells in the module
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/94—Laser ablative material removal

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
DE83307191T 1982-11-24 1983-11-24 Fotovoltaischer Wandler. Expired - Fee Related DE3382709T2 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP57206806A JPS5994885A (ja) 1982-11-24 1982-11-24 光電変換装置
JP57206809A JPS5996780A (ja) 1982-11-24 1982-11-24 光電変換装置
JP58028211A JPS59154080A (ja) 1983-02-22 1983-02-22 光電変換半導体装置
JP58075713A JPS59201471A (ja) 1983-04-29 1983-04-29 光電変換半導体装置
JP58204443A JPS6095980A (ja) 1983-10-31 1983-10-31 光電変換装置

Publications (2)

Publication Number Publication Date
DE3382709D1 DE3382709D1 (de) 1993-09-23
DE3382709T2 true DE3382709T2 (de) 1993-12-09

Family

ID=27521012

Family Applications (1)

Application Number Title Priority Date Filing Date
DE83307191T Expired - Fee Related DE3382709T2 (de) 1982-11-24 1983-11-24 Fotovoltaischer Wandler.

Country Status (6)

Country Link
US (11) US4527006A (de)
EP (1) EP0111402B1 (de)
KR (1) KR900004823B1 (de)
AU (1) AU554459B2 (de)
DE (1) DE3382709T2 (de)
GB (3) GB2133214B (de)

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US4668840A (en) * 1984-06-29 1987-05-26 Sanyo Electric Co., Ltd. Photovoltaic device
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US4645866A (en) * 1984-08-18 1987-02-24 Kyocera Corporation Photovoltaic device and a method of producing the same
US4746962A (en) * 1984-08-29 1988-05-24 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same
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US4663495A (en) * 1985-06-04 1987-05-05 Atlantic Richfield Company Transparent photovoltaic module
US4667058A (en) * 1985-07-01 1987-05-19 Solarex Corporation Method of fabricating electrically isolated photovoltaic modules arrayed on a substrate and product obtained thereby
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JPS62128571A (ja) * 1985-11-29 1987-06-10 Fuji Electric Co Ltd アモルフアスシリコン太陽電池
US4769086A (en) * 1987-01-13 1988-09-06 Atlantic Richfield Company Thin film solar cell with nickel back
US4889565A (en) * 1987-08-20 1989-12-26 Kopin Corporation High temperature photovoltaic system
US5116427A (en) * 1987-08-20 1992-05-26 Kopin Corporation High temperature photovoltaic cell
US4772335A (en) * 1987-10-15 1988-09-20 Stemcor Corporation Photovoltaic device responsive to ultraviolet radiation
EP0321224B1 (de) * 1987-12-18 1993-08-11 Semiconductor Energy Laboratory Co., Ltd. Bildsensor
US4937129A (en) * 1988-01-06 1990-06-26 Semiconductor Energy Laboratory Co., Ltd. Thin film pattern structure formed on a glass substrate
JPH029832A (ja) * 1988-02-19 1990-01-12 Mitsui Toatsu Chem Inc 固形物の洗浄回収方法
JP2752130B2 (ja) * 1989-02-20 1998-05-18 三洋電機株式会社 光起電力装置の製造方法
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US4945261A (en) * 1989-03-27 1990-07-31 National Semiconductor Corporation Level and edge sensitive input circuit
US4953577A (en) * 1989-07-06 1990-09-04 Solarex Corporation Spray encapsulation of photovoltaic modules
US5078803A (en) * 1989-09-22 1992-01-07 Siemens Solar Industries L.P. Solar cells incorporating transparent electrodes comprising hazy zinc oxide
US5374317A (en) 1990-09-26 1994-12-20 Energy Systems Solar, Incorporated Multiple reflector concentrator solar electric power system
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JP2804839B2 (ja) * 1990-10-17 1998-09-30 三菱電機株式会社 半導体装置の製造方法
JP3035565B2 (ja) * 1991-12-27 2000-04-24 株式会社半導体エネルギー研究所 薄膜太陽電池の作製方法
US5501744A (en) * 1992-01-13 1996-03-26 Photon Energy, Inc. Photovoltaic cell having a p-type polycrystalline layer with large crystals
US5279678A (en) * 1992-01-13 1994-01-18 Photon Energy, Inc. Photovoltaic cell with thin CS layer
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US5980873A (en) * 1997-07-07 1999-11-09 Kapral; Ales M. Additive for cosmetics and other topically applied materials
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JP2005101384A (ja) * 2003-09-26 2005-04-14 Sanyo Electric Co Ltd 光起電力装置及びその製造方法
US7060644B2 (en) * 2004-01-08 2006-06-13 Saudi Basic Industries Corporation Aromatic alkylation catalyst and method
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US9187820B2 (en) * 2007-09-18 2015-11-17 Shin-Etsu Polymer Co., Ltd. Radio wave transmitting decorative member
KR101368904B1 (ko) * 2007-12-31 2014-02-28 주성엔지니어링(주) 박막형 태양전지 및 그 제조방법
KR101000051B1 (ko) 2008-01-09 2010-12-10 엘지전자 주식회사 박막형 태양전지 및 그 제조방법
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Also Published As

Publication number Publication date
GB8331330D0 (en) 1984-01-04
US4527006A (en) 1985-07-02
DE3382709D1 (de) 1993-09-23
GB2133213B (en) 1987-04-08
KR840006877A (ko) 1984-12-03
US4586241A (en) 1986-05-06
GB2133214B (en) 1987-07-15
US4638108A (en) 1987-01-20
US4518815A (en) 1985-05-21
US4710397A (en) 1987-12-01
US4631801A (en) 1986-12-30
GB8331397D0 (en) 1984-01-04
KR900004823B1 (ko) 1990-07-07
GB8331396D0 (en) 1984-01-04
AU554459B2 (en) 1986-08-21
GB2133213A (en) 1984-07-18
US4529829A (en) 1985-07-16
US4593152A (en) 1986-06-03
EP0111402A2 (de) 1984-06-20
EP0111402A3 (en) 1985-09-25
GB2133214A (en) 1984-07-18
EP0111402B1 (de) 1993-08-18
GB2133215B (en) 1987-04-08
GB2133215A (en) 1984-07-18
AU2165983A (en) 1984-05-31
US4670294A (en) 1987-06-02
US4593151A (en) 1986-06-03
US4686760A (en) 1987-08-18

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee