DE3046701A1 - Diode, sowie diese enthaltendes rom- bzw. loeschbares prom-bauelement - Google Patents
Diode, sowie diese enthaltendes rom- bzw. loeschbares prom-bauelementInfo
- Publication number
- DE3046701A1 DE3046701A1 DE19803046701 DE3046701A DE3046701A1 DE 3046701 A1 DE3046701 A1 DE 3046701A1 DE 19803046701 DE19803046701 DE 19803046701 DE 3046701 A DE3046701 A DE 3046701A DE 3046701 A1 DE3046701 A1 DE 3046701A1
- Authority
- DE
- Germany
- Prior art keywords
- zone
- diode
- component according
- amorphous alloy
- erasable prom
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004020 conductor Substances 0.000 claims description 84
- 239000000463 material Substances 0.000 claims description 59
- 230000015654 memory Effects 0.000 claims description 55
- 238000003860 storage Methods 0.000 claims description 48
- 229910000808 amorphous metal alloy Inorganic materials 0.000 claims description 45
- 229910052710 silicon Inorganic materials 0.000 claims description 27
- 239000010703 silicon Substances 0.000 claims description 27
- 239000002019 doping agent Substances 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 25
- 230000004888 barrier function Effects 0.000 claims description 20
- 229910052751 metal Inorganic materials 0.000 claims description 20
- 239000002184 metal Substances 0.000 claims description 20
- 239000010409 thin film Substances 0.000 claims description 17
- 229910052731 fluorine Inorganic materials 0.000 claims description 16
- 239000011737 fluorine Substances 0.000 claims description 16
- 229910052739 hydrogen Inorganic materials 0.000 claims description 16
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 15
- 239000000956 alloy Substances 0.000 claims description 15
- 239000001257 hydrogen Substances 0.000 claims description 15
- 229910045601 alloy Inorganic materials 0.000 claims description 14
- 229910052732 germanium Inorganic materials 0.000 claims description 13
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 13
- 238000002955 isolation Methods 0.000 claims description 10
- 238000012856 packing Methods 0.000 claims description 9
- 229910052714 tellurium Inorganic materials 0.000 claims description 9
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 9
- 230000007704 transition Effects 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical group [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 6
- 239000011810 insulating material Substances 0.000 claims description 6
- 229910052698 phosphorus Inorganic materials 0.000 claims description 6
- 239000011574 phosphorus Substances 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 230000002441 reversible effect Effects 0.000 claims description 6
- 238000009413 insulation Methods 0.000 claims description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 4
- 229910052785 arsenic Inorganic materials 0.000 claims description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical group [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 4
- 229910052796 boron Inorganic materials 0.000 claims description 4
- 239000012212 insulator Substances 0.000 claims description 4
- 238000000427 thin-film deposition Methods 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 150000004770 chalcogenides Chemical class 0.000 claims description 2
- 230000000994 depressogenic effect Effects 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 6
- 239000010410 layer Substances 0.000 description 56
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 21
- 229910021417 amorphous silicon Inorganic materials 0.000 description 18
- 238000000034 method Methods 0.000 description 18
- 125000004429 atom Chemical group 0.000 description 16
- 239000010408 film Substances 0.000 description 14
- 230000008569 process Effects 0.000 description 13
- 239000004065 semiconductor Substances 0.000 description 11
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 10
- 239000013078 crystal Substances 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 10
- 230000000737 periodic effect Effects 0.000 description 9
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 8
- 229910000077 silane Inorganic materials 0.000 description 8
- 239000007789 gas Substances 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 230000009467 reduction Effects 0.000 description 6
- 230000002829 reductive effect Effects 0.000 description 5
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000002178 crystalline material Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 229910021339 platinum silicide Inorganic materials 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 229910001080 W alloy Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000011031 large-scale manufacturing process Methods 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 238000001556 precipitation Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000036961 partial effect Effects 0.000 description 2
- 241000208140 Acer Species 0.000 description 1
- 101100346656 Drosophila melanogaster strat gene Proteins 0.000 description 1
- 229910000878 H alloy Inorganic materials 0.000 description 1
- 229910017817 a-Ge Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002939 deleterious effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000009970 fire resistant effect Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
- H01L23/5252—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/685—Hi-Lo semiconductor devices, e.g. memory devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8615—Hi-lo semiconductor devices, e.g. memory devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/30—Resistive cell, memory material aspects
- G11C2213/35—Material including carbon, e.g. graphite, grapheme
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12044—OLED
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
- Non-Volatile Memory (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10301179A | 1979-12-13 | 1979-12-13 | |
| US20827480A | 1980-11-19 | 1980-11-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE3046701A1 true DE3046701A1 (de) | 1981-10-15 |
Family
ID=26799984
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19803046701 Withdrawn DE3046701A1 (de) | 1979-12-13 | 1980-12-11 | Diode, sowie diese enthaltendes rom- bzw. loeschbares prom-bauelement |
Country Status (15)
| Country | Link |
|---|---|
| JP (3) | JPS56115571A (ja) |
| KR (2) | KR850001045B1 (ja) |
| AU (1) | AU543740B2 (ja) |
| BE (1) | BE886631A (ja) |
| CA (3) | CA1155239A (ja) |
| DE (1) | DE3046701A1 (ja) |
| FR (1) | FR2475295A1 (ja) |
| GB (1) | GB2066566B (ja) |
| IL (1) | IL61671A (ja) |
| IT (1) | IT1194001B (ja) |
| MX (1) | MX150800A (ja) |
| NL (1) | NL8006771A (ja) |
| SE (1) | SE8008739L (ja) |
| SG (1) | SG72784G (ja) |
| ZA (3) | ZA807761B (ja) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9142763B2 (en) | 2007-06-20 | 2015-09-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Electronic component, and a method of manufacturing an electronic component |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3277665D1 (en) * | 1981-08-07 | 1987-12-17 | British Petroleum Co Plc | Non-volatile electrically programmable memory device |
| JPS5867066A (ja) * | 1981-10-16 | 1983-04-21 | Semiconductor Energy Lab Co Ltd | 絶緑ゲート型電界効果半導体装置の作製方法 |
| JPS59501988A (ja) * | 1982-11-11 | 1984-11-29 | ハイドリル カンパニ− | 安全弁装置及び方法 |
| US4545111A (en) * | 1983-01-18 | 1985-10-08 | Energy Conversion Devices, Inc. | Method for making, parallel preprogramming or field programming of electronic matrix arrays |
| US4677742A (en) * | 1983-01-18 | 1987-07-07 | Energy Conversion Devices, Inc. | Electronic matrix arrays and method for making the same |
| AU562641B2 (en) * | 1983-01-18 | 1987-06-18 | Energy Conversion Devices Inc. | Electronic matrix array |
| US4569121A (en) * | 1983-03-07 | 1986-02-11 | Signetics Corporation | Method of fabricating a programmable read-only memory cell incorporating an antifuse utilizing deposition of amorphous semiconductor layer |
| US4569120A (en) * | 1983-03-07 | 1986-02-11 | Signetics Corporation | Method of fabricating a programmable read-only memory cell incorporating an antifuse utilizing ion implantation |
| JPS60153552U (ja) * | 1984-03-24 | 1985-10-12 | 沖電気工業株式会社 | Ｐｎ接合半導体装置 |
| US4667217A (en) * | 1985-04-19 | 1987-05-19 | Ncr Corporation | Two bit vertically/horizontally integrated memory cell |
| US4914055A (en) * | 1989-08-24 | 1990-04-03 | Advanced Micro Devices, Inc. | Semiconductor antifuse structure and method |
| GB9113795D0 (en) * | 1991-06-26 | 1991-08-14 | Philips Electronic Associated | Thin-film rom devices and their manufacture |
| GB9117680D0 (en) * | 1991-08-16 | 1991-10-02 | Philips Electronic Associated | Electronic matrix array devices |
| JP3501416B2 (ja) * | 1994-04-28 | 2004-03-02 | 忠弘 大見 | 半導体装置 |
| JP2500484B2 (ja) * | 1994-07-11 | 1996-05-29 | ソニー株式会社 | 薄膜トランジスタの製法 |
| US6646912B2 (en) * | 2001-06-05 | 2003-11-11 | Hewlett-Packard Development Company, Lp. | Non-volatile memory |
| US6599796B2 (en) * | 2001-06-29 | 2003-07-29 | Hewlett-Packard Development Company, L.P. | Apparatus and fabrication process to reduce crosstalk in pirm memory array |
| JP3948292B2 (ja) | 2002-02-01 | 2007-07-25 | 株式会社日立製作所 | 半導体記憶装置及びその製造方法 |
| AU2003264480A1 (en) * | 2002-09-19 | 2004-04-08 | Sharp Kabushiki Kaisha | Variable resistance functional body and its manufacturing method |
| JP4541651B2 (ja) * | 2003-03-13 | 2010-09-08 | シャープ株式会社 | 抵抗変化機能体、メモリおよびその製造方法並びに半導体装置および電子機器 |
| JP4634014B2 (ja) * | 2003-05-22 | 2011-02-16 | 株式会社日立製作所 | 半導体記憶装置 |
| KR100504700B1 (ko) * | 2003-06-04 | 2005-08-03 | 삼성전자주식회사 | 고집적 상변환 램 |
| JP4767653B2 (ja) * | 2004-10-22 | 2011-09-07 | 株式会社半導体エネルギー研究所 | 半導体装置及び無線チップ |
| CN101044624A (zh) | 2004-10-22 | 2007-09-26 | 株式会社半导体能源研究所 | 半导体器件 |
| JP2008118108A (ja) * | 2006-08-25 | 2008-05-22 | Qimonda Ag | 情報記憶素子およびその製造方法 |
| JP2007019559A (ja) * | 2006-10-23 | 2007-01-25 | Hitachi Ltd | 半導体記憶装置及びその製造方法 |
| US7915603B2 (en) * | 2006-10-27 | 2011-03-29 | Qimonda Ag | Modifiable gate stack memory element |
| US9716225B2 (en) | 2014-09-03 | 2017-07-25 | Micron Technology, Inc. | Memory cells including dielectric materials, memory devices including the memory cells, and methods of forming same |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51122382A (en) * | 1975-04-18 | 1976-10-26 | Fujitsu Ltd | Semiconductor device |
| US4064521A (en) * | 1975-07-28 | 1977-12-20 | Rca Corporation | Semiconductor device having a body of amorphous silicon |
| JPS5819138B2 (ja) * | 1977-01-11 | 1983-04-16 | 日本電信電話株式会社 | 半導体装置 |
| JPS53144274A (en) * | 1977-05-23 | 1978-12-15 | Hitachi Ltd | Semiconductor device and its manufacture |
| JPS5457879A (en) * | 1977-10-15 | 1979-05-10 | Cho Lsi Gijutsu Kenkyu Kumiai | Semiconductor |
| US4177475A (en) * | 1977-10-31 | 1979-12-04 | Burroughs Corporation | High temperature amorphous memory device for an electrically alterable read-only memory |
| DE2909197A1 (de) * | 1978-03-20 | 1979-10-04 | Texas Instruments Inc | Verfahren zur herstellung eines festspeichers und festspeichermatrix |
-
1980
- 1980-12-09 IL IL61671A patent/IL61671A/xx unknown
- 1980-12-10 MX MX185133A patent/MX150800A/es unknown
- 1980-12-10 GB GB8039611A patent/GB2066566B/en not_active Expired
- 1980-12-11 ZA ZA00807761A patent/ZA807761B/xx unknown
- 1980-12-11 DE DE19803046701 patent/DE3046701A1/de not_active Withdrawn
- 1980-12-11 ZA ZA00807762A patent/ZA807762B/xx unknown
- 1980-12-11 JP JP17520080A patent/JPS56115571A/ja active Pending
- 1980-12-11 ZA ZA00807763A patent/ZA807763B/xx unknown
- 1980-12-11 JP JP17519980A patent/JPS56100464A/ja active Pending
- 1980-12-12 CA CA000366713A patent/CA1155239A/en not_active Expired
- 1980-12-12 FR FR8026401A patent/FR2475295A1/fr active Pending
- 1980-12-12 KR KR8004727A patent/KR850001045B1/ko active
- 1980-12-12 SE SE8008739A patent/SE8008739L/xx not_active Application Discontinuation
- 1980-12-12 KR KR1019800004729A patent/KR830004681A/ko unknown
- 1980-12-12 BE BE0/203148A patent/BE886631A/fr not_active IP Right Cessation
- 1980-12-12 AU AU65315/80A patent/AU543740B2/en not_active Withdrawn - After Issue
- 1980-12-12 JP JP17568280A patent/JPS56103474A/ja active Pending
- 1980-12-12 IT IT26643/80A patent/IT1194001B/it active
- 1980-12-12 NL NL8006771A patent/NL8006771A/nl not_active Application Discontinuation
-
1983
- 1983-06-14 CA CA000430398A patent/CA1161970A/en not_active Expired
- 1983-06-14 CA CA000430399A patent/CA1162327A/en not_active Expired
-
1984
- 1984-10-17 SG SG727/84A patent/SG72784G/en unknown
Non-Patent Citations (3)
| Title |
|---|
| Nature, Bd. 276, 30.11.78, S. 482-783 * |
| WO 79/00716 * |
| WO 79/00724 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9142763B2 (en) | 2007-06-20 | 2015-09-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Electronic component, and a method of manufacturing an electronic component |
| DE112008001618B4 (de) * | 2007-06-20 | 2019-10-31 | Taiwan Semiconductor Mfg. Co., Ltd. | Elektronisches Bauteil und Verfahren zum Herstellen eines solchen |
Also Published As
| Publication number | Publication date |
|---|---|
| CA1162327A (en) | 1984-02-14 |
| ZA807761B (en) | 1981-12-30 |
| AU6531580A (en) | 1981-06-18 |
| CA1155239A (en) | 1983-10-11 |
| SE8008739L (sv) | 1981-06-14 |
| GB2066566A (en) | 1981-07-08 |
| MX150800A (es) | 1984-07-19 |
| SG72784G (en) | 1985-03-29 |
| IT1194001B (it) | 1988-08-31 |
| IT8026643A0 (it) | 1980-12-12 |
| CA1161970A (en) | 1984-02-07 |
| JPS56103474A (en) | 1981-08-18 |
| ZA807762B (en) | 1981-12-30 |
| KR830004681A (ko) | 1983-07-16 |
| AU543740B2 (en) | 1985-05-02 |
| KR830004679A (ko) | 1983-07-16 |
| GB2066566B (en) | 1984-07-04 |
| NL8006771A (nl) | 1981-07-16 |
| ZA807763B (en) | 1981-12-30 |
| JPS56100464A (en) | 1981-08-12 |
| IL61671A0 (en) | 1981-01-30 |
| JPS56115571A (en) | 1981-09-10 |
| KR850001045B1 (en) | 1985-07-19 |
| IL61671A (en) | 1984-04-30 |
| FR2475295A1 (fr) | 1981-08-07 |
| BE886631A (fr) | 1981-04-01 |
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