DE3013679A1 - Verfahren und vorrichtung zum chemischen behandeln von werkstuecken - Google Patents

Verfahren und vorrichtung zum chemischen behandeln von werkstuecken

Info

Publication number
DE3013679A1
DE3013679A1 DE19803013679 DE3013679A DE3013679A1 DE 3013679 A1 DE3013679 A1 DE 3013679A1 DE 19803013679 DE19803013679 DE 19803013679 DE 3013679 A DE3013679 A DE 3013679A DE 3013679 A1 DE3013679 A1 DE 3013679A1
Authority
DE
Germany
Prior art keywords
workpiece
laser beam
gaseous
gas atmosphere
reactive product
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19803013679
Other languages
German (de)
English (en)
Other versions
DE3013679C2 (enExample
Inventor
Dean R Denison
Larry D Hartsough
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Biosystems Inc
Original Assignee
Perkin Elmer Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Perkin Elmer Corp filed Critical Perkin Elmer Corp
Publication of DE3013679A1 publication Critical patent/DE3013679A1/de
Application granted granted Critical
Publication of DE3013679C2 publication Critical patent/DE3013679C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
  • ing And Chemical Polishing (AREA)
  • Laser Beam Processing (AREA)
DE19803013679 1979-05-07 1980-04-09 Verfahren und vorrichtung zum chemischen behandeln von werkstuecken Granted DE3013679A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/036,828 US4260649A (en) 1979-05-07 1979-05-07 Laser induced dissociative chemical gas phase processing of workpieces

Publications (2)

Publication Number Publication Date
DE3013679A1 true DE3013679A1 (de) 1980-11-13
DE3013679C2 DE3013679C2 (enExample) 1990-06-13

Family

ID=21890868

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19803013679 Granted DE3013679A1 (de) 1979-05-07 1980-04-09 Verfahren und vorrichtung zum chemischen behandeln von werkstuecken

Country Status (7)

Country Link
US (1) US4260649A (enExample)
JP (1) JPS55149643A (enExample)
CH (1) CH644898A5 (enExample)
DE (1) DE3013679A1 (enExample)
FR (1) FR2456145A1 (enExample)
GB (1) GB2048786B (enExample)
NL (1) NL8002566A (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3416470A1 (de) * 1983-05-11 1984-11-15 Semiconductor Research Foundation, Sendai, Miyagi Verfahren und vorrichtung zur herstellung von halbleitern im trockenverfahren unter verwendung einer fotochemischen reaktion
DE3420347A1 (de) * 1983-06-01 1984-12-06 Hitachi, Ltd., Tokio/Tokyo Gas und verfahren zum selektiven aetzen von siliciumnitrid
DE3516973A1 (de) * 1984-06-22 1986-01-02 Kabushiki Kaisha Toshiba, Kawasaki, Kanagawa Verfahren und vorrichtung zum aufloesen eines filmes an einem halbleitersubstrat
DE3437056A1 (de) * 1984-10-09 1986-04-10 Dieter Prof. Dr. Linz Bäuerle Aetzverfahren fuer koerper aus dielektrischer oxidkeramik bzw. dielektrische oxidische (ein-)kristalle
DE3921845A1 (de) * 1989-07-03 1991-01-17 Olaf Dr Adam Verfahren zur quantitativen messung duennschicht-chromatographisch getrennter proben
WO1999034429A1 (en) * 1997-12-31 1999-07-08 Alliedsignal Inc. Method of etching and cleaning using fluorinated carbonyl compounds

Families Citing this family (106)

* Cited by examiner, † Cited by third party
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US4340617A (en) * 1980-05-19 1982-07-20 Massachusetts Institute Of Technology Method and apparatus for depositing a material on a surface
US4579750A (en) * 1980-07-07 1986-04-01 Massachusetts Institute Of Technology Laser heated CVD process
NL8004008A (nl) * 1980-07-11 1982-02-01 Philips Nv Werkwijze voor het vervaardigen van een halfgeleider- inrichting.
NL8004007A (nl) * 1980-07-11 1982-02-01 Philips Nv Werkwijze voor het vervaardigen van een halfgeleider- inrichting.
US4348428A (en) * 1980-12-15 1982-09-07 Board Of Regents For Oklahoma Agriculture And Mechanical Colleges Acting For And On Behalf Of Oklahoma State University Of Agriculture And Applied Sciences Method of depositing doped amorphous semiconductor on a substrate
US4331504A (en) * 1981-06-25 1982-05-25 International Business Machines Corporation Etching process with vibrationally excited SF6
JPS5852827A (ja) * 1981-09-25 1983-03-29 Hitachi Ltd ドライエツチング方法および装置
US4376672A (en) * 1981-10-26 1983-03-15 Applied Materials, Inc. Materials and methods for plasma etching of oxides and nitrides of silicon
US4434189A (en) 1982-03-15 1984-02-28 The United States Of America As Represented By The Adminstrator Of The National Aeronautics And Space Administration Method and apparatus for coating substrates using a laser
EP0110882A1 (en) * 1982-06-01 1984-06-20 Massachusetts Institute Of Technology Maskless growth of patterned films
US4542580A (en) * 1983-02-14 1985-09-24 Prime Computer, Inc. Method of fabricating n-type silicon regions and associated contacts
JPH0669027B2 (ja) * 1983-02-21 1994-08-31 株式会社日立製作所 半導体ウエハの薄膜形成方法
JPH0622212B2 (ja) * 1983-05-31 1994-03-23 株式会社東芝 ドライエッチング方法
JPS6041229A (ja) * 1983-08-17 1985-03-04 Fujitsu Ltd 半導体装置の製造方法及びその製造装置
JPS6077429A (ja) * 1983-10-04 1985-05-02 Asahi Glass Co Ltd ドライエツチング方法
US4645687A (en) * 1983-11-10 1987-02-24 At&T Laboratories Deposition of III-V semiconductor materials
JPS60118234A (ja) * 1983-11-30 1985-06-25 Inoue Japax Res Inc 金属若しくは非金属化合物又はグラファイト若しくはグラファイト組成物の製造方法
US4478677A (en) * 1983-12-22 1984-10-23 International Business Machines Corporation Laser induced dry etching of vias in glass with non-contact masking
US4490210A (en) * 1984-01-24 1984-12-25 International Business Machines Corporation Laser induced dry chemical etching of metals
US4490211A (en) * 1984-01-24 1984-12-25 International Business Machines Corporation Laser induced chemical etching of metals with excimer lasers
US4581248A (en) * 1984-03-07 1986-04-08 Roche Gregory A Apparatus and method for laser-induced chemical vapor deposition
US4617237A (en) * 1984-05-14 1986-10-14 Allied Corporation Production of conductive metal silicide films from ultrafine powders
US4568565A (en) * 1984-05-14 1986-02-04 Allied Corporation Light induced chemical vapor deposition of conductive titanium silicide films
JPS60247927A (ja) * 1984-05-23 1985-12-07 Toshiba Corp パタ−ン形成方法
KR920004171B1 (ko) * 1984-07-11 1992-05-30 가부시기가이샤 히다찌세이사꾸쇼 드라이에칭장치
JPS61213376A (ja) * 1985-03-19 1986-09-22 Mitsubishi Electric Corp 光化学成膜装置
US4719122A (en) * 1985-04-08 1988-01-12 Semiconductor Energy Laboratory Co., Ltd. CVD method and apparatus for forming a film
US4668304A (en) * 1985-04-10 1987-05-26 Eaton Corporation Dopant gettering semiconductor processing by excimer laser
US4659426A (en) * 1985-05-03 1987-04-21 Texas Instruments Incorporated Plasma etching of refractory metals and their silicides
US4664938A (en) * 1985-05-06 1987-05-12 Phillips Petroleum Company Method for deposition of silicon
US4699689A (en) * 1985-05-17 1987-10-13 Emergent Technologies Corporation Method and apparatus for dry processing of substrates
US4649059A (en) * 1985-05-29 1987-03-10 The United States Of America As Represented By The Secretary Of The Air Force Photoionization technique for growth of metallic films
US4987008A (en) * 1985-07-02 1991-01-22 Semiconductor Energy Laboratory Co., Ltd. Thin film formation method
US4694777A (en) * 1985-07-03 1987-09-22 Roche Gregory A Apparatus for, and methods of, depositing a substance on a substrate
JPS6245035A (ja) * 1985-08-23 1987-02-27 Hitachi Ltd 半導体装置の製造装置
JPH0643638B2 (ja) * 1985-09-20 1994-06-08 宇部興産株式会社 アルミニウム膜のエツチング方法
US4622095A (en) * 1985-10-18 1986-11-11 Ibm Corporation Laser stimulated halogen gas etching of metal substrates
US4664057A (en) * 1985-12-20 1987-05-12 Allied Corporation Photoprocessing apparatus including conical reflector
JPS62262433A (ja) * 1986-05-09 1987-11-14 Hitachi Ltd 表面処理方法
US4888203A (en) * 1987-11-13 1989-12-19 Massachusetts Institute Of Technology Hydrolysis-induced vapor deposition of oxide films
JPH01134932A (ja) * 1987-11-19 1989-05-26 Oki Electric Ind Co Ltd 基板清浄化方法及び基板清浄化装置
US4843030A (en) * 1987-11-30 1989-06-27 Eaton Corporation Semiconductor processing by a combination of photolytic, pyrolytic and catalytic processes
US5310624A (en) * 1988-01-29 1994-05-10 Massachusetts Institute Of Technology Integrated circuit micro-fabrication using dry lithographic processes
DE3837487A1 (de) * 1988-11-04 1990-05-10 Leybold Ag Verfahren und vorrichtung zum aetzen von substraten mit einer magnetfeldunterstuetzten niederdruck-entladung
US4940505A (en) * 1988-12-02 1990-07-10 Eaton Corporation Method for growing single crystalline silicon with intermediate bonding agent and combined thermal and photolytic activation
US4987855A (en) * 1989-11-09 1991-01-29 Santa Barbara Research Center Reactor for laser-assisted chemical vapor deposition
US5525156A (en) * 1989-11-24 1996-06-11 Research Development Corporation Apparatus for epitaxially growing a chemical compound crystal
US5318662A (en) * 1989-12-20 1994-06-07 Texas Instruments Incorporated Copper etch process using halides
US5493445A (en) * 1990-03-29 1996-02-20 The United States Of America As Represented By The Secretary Of The Navy Laser textured surface absorber and emitter
US5322988A (en) * 1990-03-29 1994-06-21 The United States Of America As Represented By The Secretary Of The Navy Laser texturing
US5195163A (en) * 1991-09-27 1993-03-16 The United States Of America As Represented By The Secretary Of The Navy Fabrication and phase tuning of an optical waveguide device
US5366559A (en) * 1993-05-27 1994-11-22 Research Triangle Institute Method for protecting a substrate surface from contamination using the photophoretic effect
JP2718893B2 (ja) * 1993-06-04 1998-02-25 インターナショナル・ビジネス・マシーンズ・コーポレイション 移相マスクの移相欠陥を修復する方法
US6015503A (en) * 1994-06-14 2000-01-18 Fsi International, Inc. Method and apparatus for surface conditioning
US5580421A (en) * 1994-06-14 1996-12-03 Fsi International Apparatus for surface conditioning
US5607601A (en) * 1995-02-02 1997-03-04 The Aerospace Corporation Method for patterning and etching film layers of semiconductor devices
DE19506118C1 (de) * 1995-02-22 1996-08-14 Karlsruhe Forschzent Verfahren zum plasmalosen Ätzen eines Silicium-Substrats
GB9514558D0 (en) 1995-07-17 1995-09-13 Gersan Ets Marking diamond
JPH09129612A (ja) * 1995-10-26 1997-05-16 Tokyo Electron Ltd エッチングガス及びエッチング方法
JPH1027781A (ja) * 1996-07-10 1998-01-27 Daikin Ind Ltd エッチングガスおよびクリーニングガス
US5874011A (en) * 1996-08-01 1999-02-23 Revise, Inc. Laser-induced etching of multilayer materials
JP3322181B2 (ja) * 1997-09-17 2002-09-09 インターナショナル・ビジネス・マシーンズ・コーポレーション ドライエッチング方法および装置
US6165273A (en) 1997-10-21 2000-12-26 Fsi International Inc. Equipment for UV wafer heating and photochemistry
US6120697A (en) 1997-12-31 2000-09-19 Alliedsignal Inc Method of etching using hydrofluorocarbon compounds
JP3570903B2 (ja) * 1998-09-25 2004-09-29 株式会社ルネサステクノロジ 半導体装置の製造方法
US6136210A (en) * 1998-11-02 2000-10-24 Xerox Corporation Photoetching of acoustic lenses for acoustic ink printing
US6951827B2 (en) 2000-03-15 2005-10-04 Tufts University Controlling surface chemistry on solid substrates
US6674058B1 (en) 2000-09-20 2004-01-06 Compucyte Corporation Apparatus and method for focusing a laser scanning cytometer
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US8574408B2 (en) 2007-05-11 2013-11-05 SDCmaterials, Inc. Fluid recirculation system for use in vapor phase particle production system
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US7807062B2 (en) * 2006-07-10 2010-10-05 Micron Technology, Inc. Electron induced chemical etching and deposition for local circuit repair
US7833427B2 (en) * 2006-08-14 2010-11-16 Micron Technology, Inc. Electron beam etching device and method
US7718080B2 (en) 2006-08-14 2010-05-18 Micron Technology, Inc. Electronic beam processing device and method using carbon nanotube emitter
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US20110143930A1 (en) * 2009-12-15 2011-06-16 SDCmaterials, Inc. Tunable size of nano-active material on nano-support
US8557727B2 (en) 2009-12-15 2013-10-15 SDCmaterials, Inc. Method of forming a catalyst with inhibited mobility of nano-active material
US8803025B2 (en) 2009-12-15 2014-08-12 SDCmaterials, Inc. Non-plugging D.C. plasma gun
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US2841477A (en) * 1957-03-04 1958-07-01 Pacific Semiconductors Inc Photochemically activated gaseous etching method
DE1901524A1 (de) * 1968-02-09 1969-08-28 Siemens Ag Verfahren zum formaendernden Bearbeiten eines kristallinen Koerpers aus Halbleitermaterial,insbesondere eines Siliziumeinkristalls
FR2232613A1 (en) * 1973-06-07 1975-01-03 Poudres & Explosifs Ste Nale Deposition from vapour phase using laser heating - boron cpds. obtd. on silica, carbon or tungsten substrates

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JPS53121469A (en) * 1977-03-31 1978-10-23 Toshiba Corp Gas etching unit

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DE1901524A1 (de) * 1968-02-09 1969-08-28 Siemens Ag Verfahren zum formaendernden Bearbeiten eines kristallinen Koerpers aus Halbleitermaterial,insbesondere eines Siliziumeinkristalls
FR2232613A1 (en) * 1973-06-07 1975-01-03 Poudres & Explosifs Ste Nale Deposition from vapour phase using laser heating - boron cpds. obtd. on silica, carbon or tungsten substrates

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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3416470A1 (de) * 1983-05-11 1984-11-15 Semiconductor Research Foundation, Sendai, Miyagi Verfahren und vorrichtung zur herstellung von halbleitern im trockenverfahren unter verwendung einer fotochemischen reaktion
DE3420347A1 (de) * 1983-06-01 1984-12-06 Hitachi, Ltd., Tokio/Tokyo Gas und verfahren zum selektiven aetzen von siliciumnitrid
DE3516973A1 (de) * 1984-06-22 1986-01-02 Kabushiki Kaisha Toshiba, Kawasaki, Kanagawa Verfahren und vorrichtung zum aufloesen eines filmes an einem halbleitersubstrat
US4634497A (en) * 1984-06-22 1987-01-06 Kabushiki Kaisha Toshiba Method and apparatus for decomposing semiconductor thin film
DE3437056A1 (de) * 1984-10-09 1986-04-10 Dieter Prof. Dr. Linz Bäuerle Aetzverfahren fuer koerper aus dielektrischer oxidkeramik bzw. dielektrische oxidische (ein-)kristalle
DE3921845A1 (de) * 1989-07-03 1991-01-17 Olaf Dr Adam Verfahren zur quantitativen messung duennschicht-chromatographisch getrennter proben
WO1999034429A1 (en) * 1997-12-31 1999-07-08 Alliedsignal Inc. Method of etching and cleaning using fluorinated carbonyl compounds
US6635185B2 (en) 1997-12-31 2003-10-21 Alliedsignal Inc. Method of etching and cleaning using fluorinated carbonyl compounds

Also Published As

Publication number Publication date
GB2048786A (en) 1980-12-17
NL8002566A (nl) 1980-11-11
FR2456145A1 (fr) 1980-12-05
CH644898A5 (de) 1984-08-31
FR2456145B1 (enExample) 1985-03-22
JPS55149643A (en) 1980-11-21
US4260649A (en) 1981-04-07
DE3013679C2 (enExample) 1990-06-13
JPS631097B2 (enExample) 1988-01-11
GB2048786B (en) 1983-01-06

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