DE69421215T2 - Einen Schnellatomstrahl gebrauchende Verarbeitungsvorrichtung - Google Patents

Einen Schnellatomstrahl gebrauchende Verarbeitungsvorrichtung

Info

Publication number
DE69421215T2
DE69421215T2 DE69421215T DE69421215T DE69421215T2 DE 69421215 T2 DE69421215 T2 DE 69421215T2 DE 69421215 T DE69421215 T DE 69421215T DE 69421215 T DE69421215 T DE 69421215T DE 69421215 T2 DE69421215 T2 DE 69421215T2
Authority
DE
Germany
Prior art keywords
processing device
fast atom
atom beam
fast
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69421215T
Other languages
English (en)
Other versions
DE69421215D1 (de
Inventor
Masahiro Hatakeyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ebara Corp
Original Assignee
Ebara Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara Corp filed Critical Ebara Corp
Publication of DE69421215D1 publication Critical patent/DE69421215D1/de
Application granted granted Critical
Publication of DE69421215T2 publication Critical patent/DE69421215T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K5/00—Irradiation devices
    • G21K5/04—Irradiation devices with beam-forming means
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H3/00—Production or acceleration of neutral particle beams, e.g. molecular or atomic beams
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K5/00—Irradiation devices

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Laser Beam Processing (AREA)
  • Welding Or Cutting Using Electron Beams (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Particle Accelerators (AREA)
DE69421215T 1993-07-05 1994-07-04 Einen Schnellatomstrahl gebrauchende Verarbeitungsvorrichtung Expired - Fee Related DE69421215T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19207393A JP3432545B2 (ja) 1993-07-05 1993-07-05 高速原子線を用いる加工装置

Publications (2)

Publication Number Publication Date
DE69421215D1 DE69421215D1 (de) 1999-11-25
DE69421215T2 true DE69421215T2 (de) 2000-05-31

Family

ID=16285188

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69421215T Expired - Fee Related DE69421215T2 (de) 1993-07-05 1994-07-04 Einen Schnellatomstrahl gebrauchende Verarbeitungsvorrichtung

Country Status (5)

Country Link
US (1) US5563416A (de)
EP (1) EP0633714B1 (de)
JP (1) JP3432545B2 (de)
KR (1) KR100333429B1 (de)
DE (1) DE69421215T2 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6671034B1 (en) * 1998-04-30 2003-12-30 Ebara Corporation Microfabrication of pattern imprinting
US6465795B1 (en) * 2000-03-28 2002-10-15 Applied Materials, Inc. Charge neutralization of electron beam systems
EP1160826A3 (de) * 2000-05-30 2006-12-13 Ebara Corporation Beschichten, Verändern und Ätzen eines Substrats mittels Teilchenbestrahlung
CN100369706C (zh) * 2004-10-22 2008-02-20 沈阳黎明航空发动机(集团)有限责任公司 一种薄壁钛合金组件的真空电子束焊接方法
US8801378B2 (en) 2010-02-24 2014-08-12 Sikorsky Aircraft Corporation Low offset hingeless rotor with pitch change bearings
CN103084726B (zh) * 2013-02-01 2015-04-08 中国航空工业集团公司北京航空制造工程研究所 一种电子束表面微造型的动态加工方法
CN112570875B (zh) * 2020-12-09 2022-07-29 兰州空间技术物理研究所 一种用于板式表面张力贮箱形变控制的焊接工艺方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL122665C (de) * 1959-08-17
SU886044A1 (ru) * 1980-03-11 1981-11-30 Каунасский Политехнический Институт Им. А.Снечкуса Способ обработки рабочей поверхности магнитной головки
FR2555829B1 (fr) * 1983-11-30 1986-03-28 Lucas Georges Emission conjuguee de lumiere coherente et de particules materielles chargees en energie, et dispositif pour la mise en oeuvre d'une telle emission
US4624736A (en) * 1984-07-24 1986-11-25 The United States Of America As Represented By The United States Department Of Energy Laser/plasma chemical processing of substrates
US5108543A (en) * 1984-11-07 1992-04-28 Hitachi, Ltd. Method of surface treatment
KR960016218B1 (ko) * 1987-06-05 1996-12-07 가부시기가이샤 히다찌세이사꾸쇼 표면처리방법 및 그 장치
US4886570A (en) * 1987-07-16 1989-12-12 Texas Instruments Incorporated Processing apparatus and method
EP0380667A4 (en) * 1987-10-07 1991-04-24 Terumo Kabushiki Kaisha Ultraviolet-absorbing polymer material and photoetching process
US4874459A (en) * 1988-10-17 1989-10-17 The Regents Of The University Of California Low damage-producing, anisotropic, chemically enhanced etching method and apparatus
EP0418540A3 (en) * 1989-08-11 1991-08-07 Sanyo Electric Co., Ltd. Dry etching method
JPH0724240B2 (ja) * 1991-03-05 1995-03-15 株式会社荏原製作所 高速原子線源
US5286331A (en) * 1991-11-01 1994-02-15 International Business Machines Corporation Supersonic molecular beam etching of surfaces
JP2840502B2 (ja) * 1992-06-03 1998-12-24 三洋電機株式会社 高機能材料膜形成方法
US5429730A (en) * 1992-11-02 1995-07-04 Kabushiki Kaisha Toshiba Method of repairing defect of structure

Also Published As

Publication number Publication date
KR100333429B1 (ko) 2002-09-05
EP0633714B1 (de) 1999-10-20
US5563416A (en) 1996-10-08
JP3432545B2 (ja) 2003-08-04
KR950004654A (ko) 1995-02-18
DE69421215D1 (de) 1999-11-25
EP0633714A1 (de) 1995-01-11
JPH0716761A (ja) 1995-01-20

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee