DE2605641C3 - Hochfrequenztransistor und Verfahren zu seiner Herstellung - Google Patents

Hochfrequenztransistor und Verfahren zu seiner Herstellung

Info

Publication number
DE2605641C3
DE2605641C3 DE2605641A DE2605641A DE2605641C3 DE 2605641 C3 DE2605641 C3 DE 2605641C3 DE 2605641 A DE2605641 A DE 2605641A DE 2605641 A DE2605641 A DE 2605641A DE 2605641 C3 DE2605641 C3 DE 2605641C3
Authority
DE
Germany
Prior art keywords
zone
base zone
frequency transistor
semiconductor body
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2605641A
Other languages
German (de)
English (en)
Other versions
DE2605641B2 (de
DE2605641A1 (de
Inventor
Ronald 8021 Taufkirchen Rathbone
Ulrich Dr. 8000 Muenchen Schwabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DE2605641A priority Critical patent/DE2605641C3/de
Priority to GB46045/76A priority patent/GB1530010A/en
Priority to US05/749,609 priority patent/US4110779A/en
Priority to IT20093/77A priority patent/IT1074663B/it
Priority to JP1403277A priority patent/JPS5299078A/ja
Priority to FR7703758A priority patent/FR2341206A1/fr
Publication of DE2605641A1 publication Critical patent/DE2605641A1/de
Publication of DE2605641B2 publication Critical patent/DE2605641B2/de
Application granted granted Critical
Publication of DE2605641C3 publication Critical patent/DE2605641C3/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/051—Manufacture or treatment of vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H10D10/441—Vertical BJTs having an emitter-base junction ending at a main surface of the body and a base-collector junction ending at a lateral surface of the body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors

Landscapes

  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
DE2605641A 1976-02-12 1976-02-12 Hochfrequenztransistor und Verfahren zu seiner Herstellung Expired DE2605641C3 (de)

Priority Applications (6)

Application Number Priority Date Filing Date Title
DE2605641A DE2605641C3 (de) 1976-02-12 1976-02-12 Hochfrequenztransistor und Verfahren zu seiner Herstellung
GB46045/76A GB1530010A (en) 1976-02-12 1976-11-05 Highfrequency transistors
US05/749,609 US4110779A (en) 1976-02-12 1976-12-13 High frequency transistor
IT20093/77A IT1074663B (it) 1976-02-12 1977-02-09 Transistore per alte frequenze
JP1403277A JPS5299078A (en) 1976-02-12 1977-02-10 Hf transistor
FR7703758A FR2341206A1 (fr) 1976-02-12 1977-02-10 Transistor a haute frequence

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2605641A DE2605641C3 (de) 1976-02-12 1976-02-12 Hochfrequenztransistor und Verfahren zu seiner Herstellung

Publications (3)

Publication Number Publication Date
DE2605641A1 DE2605641A1 (de) 1977-08-18
DE2605641B2 DE2605641B2 (de) 1979-04-19
DE2605641C3 true DE2605641C3 (de) 1979-12-20

Family

ID=5969731

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2605641A Expired DE2605641C3 (de) 1976-02-12 1976-02-12 Hochfrequenztransistor und Verfahren zu seiner Herstellung

Country Status (6)

Country Link
US (1) US4110779A (https=)
JP (1) JPS5299078A (https=)
DE (1) DE2605641C3 (https=)
FR (1) FR2341206A1 (https=)
GB (1) GB1530010A (https=)
IT (1) IT1074663B (https=)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7709363A (nl) * 1977-08-25 1979-02-27 Philips Nv Werkwijze ter vervaardiging van een halfgeleider- inrichting en halfgeleiderinrichting vervaardigd onder toepassing van een dergelijke werkwijze.
US4228450A (en) * 1977-10-25 1980-10-14 International Business Machines Corporation Buried high sheet resistance structure for high density integrated circuits with reach through contacts
US4196440A (en) * 1978-05-25 1980-04-01 International Business Machines Corporation Lateral PNP or NPN with a high gain
JPS5852339B2 (ja) * 1979-03-20 1983-11-22 富士通株式会社 半導体装置の製造方法
US4677456A (en) * 1979-05-25 1987-06-30 Raytheon Company Semiconductor structure and manufacturing method
US4289550A (en) * 1979-05-25 1981-09-15 Raytheon Company Method of forming closely spaced device regions utilizing selective etching and diffusion
DE2922250A1 (de) * 1979-05-31 1980-12-11 Siemens Ag Lichtsteuerbarer transistor
US4261763A (en) * 1979-10-01 1981-04-14 Burroughs Corporation Fabrication of integrated circuits employing only ion implantation for all dopant layers
JPS57149770A (en) * 1981-03-11 1982-09-16 Mitsubishi Electric Corp Manufacture of semiconductor device
US4435225A (en) 1981-05-11 1984-03-06 Fairchild Camera & Instrument Corporation Method of forming self-aligned lateral bipolar transistor
JPS5870570A (ja) * 1981-09-28 1983-04-27 Fujitsu Ltd 半導体装置の製造方法
US4624046A (en) * 1982-01-04 1986-11-25 Fairchild Camera & Instrument Corp. Oxide isolation process for standard RAM/PROM and lateral PNP cell RAM
US4519128A (en) * 1983-10-05 1985-05-28 International Business Machines Corporation Method of making a trench isolated device
US4547793A (en) * 1983-12-27 1985-10-15 International Business Machines Corporation Trench-defined semiconductor structure
US4725562A (en) * 1986-03-27 1988-02-16 International Business Machines Corporation Method of making a contact to a trench isolated device
IT1231913B (it) * 1987-10-23 1992-01-15 Sgs Microelettronica Spa Procedimento di fabbricazione di transistori ad alta frequenza.
SE461428B (sv) * 1988-06-16 1990-02-12 Ericsson Telefon Ab L M Foerfarande foer att paa ett underlag av halvledarmaterial framstaella en bipolaer transistor eller en bipolaer transistor och en faelteffekttransistor eller en bipolaer transistor och en faelteffekttransistor med en komplementaer faelteffekttransistor och anordningar framstaellda enligt foerfarandena
DE19962907A1 (de) 1999-12-23 2001-07-05 Basf Ag Verfahren zur Herstellung von C¶10¶-C¶30¶-Alkenen durch partielle Hydrierung von Alkinen an Festbett-Palladium-Trägerkatalysatoren

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3648125A (en) * 1971-02-02 1972-03-07 Fairchild Camera Instr Co Method of fabricating integrated circuits with oxidized isolation and the resulting structure
US4005453A (en) * 1971-04-14 1977-01-25 U.S. Philips Corporation Semiconductor device with isolated circuit elements and method of making
SE373984B (https=) * 1973-03-19 1975-02-17 Ericsson Telefon Ab L M
GB1457139A (en) * 1973-09-27 1976-12-01 Hitachi Ltd Method of manufacturing semiconductor device
JPS5214594B2 (https=) * 1973-10-17 1977-04-22
CA1010157A (en) * 1974-01-14 1977-05-10 Bernard T. Murphy Oxide isolated integrated circuit structure and method for fabricating

Also Published As

Publication number Publication date
GB1530010A (en) 1978-10-25
DE2605641B2 (de) 1979-04-19
US4110779A (en) 1978-08-29
FR2341206A1 (fr) 1977-09-09
DE2605641A1 (de) 1977-08-18
IT1074663B (it) 1985-04-20
FR2341206B1 (https=) 1983-05-20
JPS5299078A (en) 1977-08-19

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Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)
8339 Ceased/non-payment of the annual fee