IT1231913B - Procedimento di fabbricazione di transistori ad alta frequenza. - Google Patents
Procedimento di fabbricazione di transistori ad alta frequenza.Info
- Publication number
- IT1231913B IT1231913B IT8722392A IT2239287A IT1231913B IT 1231913 B IT1231913 B IT 1231913B IT 8722392 A IT8722392 A IT 8722392A IT 2239287 A IT2239287 A IT 2239287A IT 1231913 B IT1231913 B IT 1231913B
- Authority
- IT
- Italy
- Prior art keywords
- high frequency
- manufacturing procedure
- frequency transistors
- transistors
- procedure
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76205—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76213—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose
- H01L21/76216—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose introducing electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/103—Mask, dual function, e.g. diffusion and oxidation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Bipolar Transistors (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT8722392A IT1231913B (it) | 1987-10-23 | 1987-10-23 | Procedimento di fabbricazione di transistori ad alta frequenza. |
DE3854911T DE3854911T2 (de) | 1987-10-23 | 1988-10-11 | Verfahren zum Herstellen von Hochfrequenztransistoren |
EP88202260A EP0313147B1 (en) | 1987-10-23 | 1988-10-11 | Manufacturing process for high-frequency transistors |
US07/259,261 US5013672A (en) | 1987-10-23 | 1988-10-18 | Manufacturing process for high-frequency bipolar transistors |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT8722392A IT1231913B (it) | 1987-10-23 | 1987-10-23 | Procedimento di fabbricazione di transistori ad alta frequenza. |
Publications (2)
Publication Number | Publication Date |
---|---|
IT8722392A0 IT8722392A0 (it) | 1987-10-23 |
IT1231913B true IT1231913B (it) | 1992-01-15 |
Family
ID=11195666
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT8722392A IT1231913B (it) | 1987-10-23 | 1987-10-23 | Procedimento di fabbricazione di transistori ad alta frequenza. |
Country Status (4)
Country | Link |
---|---|
US (1) | US5013672A (it) |
EP (1) | EP0313147B1 (it) |
DE (1) | DE3854911T2 (it) |
IT (1) | IT1231913B (it) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5244821A (en) * | 1991-06-07 | 1993-09-14 | At&T Bell Laboratories | Bipolar fabrication method |
US5128272A (en) * | 1991-06-18 | 1992-07-07 | National Semiconductor Corporation | Self-aligned planar monolithic integrated circuit vertical transistor process |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1492447A (en) * | 1974-07-25 | 1977-11-16 | Siemens Ag | Semiconductor devices |
DE2507366C3 (de) * | 1975-02-20 | 1980-06-26 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zur Unterdrückung parasitärer Schaltungselemente |
DE2605641C3 (de) * | 1976-02-12 | 1979-12-20 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Hochfrequenztransistor und Verfahren zu seiner Herstellung |
US4143455A (en) * | 1976-03-11 | 1979-03-13 | Siemens Aktiengesellschaft | Method of producing a semiconductor component |
US4199380A (en) * | 1978-11-13 | 1980-04-22 | Motorola, Inc. | Integrated circuit method |
US4498227A (en) * | 1983-07-05 | 1985-02-12 | Fairchild Camera & Instrument Corporation | Wafer fabrication by implanting through protective layer |
-
1987
- 1987-10-23 IT IT8722392A patent/IT1231913B/it active
-
1988
- 1988-10-11 EP EP88202260A patent/EP0313147B1/en not_active Expired - Lifetime
- 1988-10-11 DE DE3854911T patent/DE3854911T2/de not_active Expired - Fee Related
- 1988-10-18 US US07/259,261 patent/US5013672A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0313147A1 (en) | 1989-04-26 |
US5013672A (en) | 1991-05-07 |
IT8722392A0 (it) | 1987-10-23 |
EP0313147B1 (en) | 1996-01-17 |
DE3854911T2 (de) | 1996-09-05 |
DE3854911D1 (de) | 1996-02-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19971030 |