ITRM910621A0 - Procedimento per la fabbricazione di transistori con struttura gate -isolante -semiconduttore. - Google Patents
Procedimento per la fabbricazione di transistori con struttura gate -isolante -semiconduttore.Info
- Publication number
- ITRM910621A0 ITRM910621A0 IT91RM621A ITRM910621A ITRM910621A0 IT RM910621 A0 ITRM910621 A0 IT RM910621A0 IT 91RM621 A IT91RM621 A IT 91RM621A IT RM910621 A ITRM910621 A IT RM910621A IT RM910621 A0 ITRM910621 A0 IT RM910621A0
- Authority
- IT
- Italy
- Prior art keywords
- insulator
- transistors
- gate
- procedure
- manufacture
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28088—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a composite, e.g. TiN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4966—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2
- H01L29/4975—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2 being a silicide layer, e.g. TiSi2
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Composite Materials (AREA)
- Materials Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019900012815A KR920005242A (ko) | 1990-08-20 | 1990-08-20 | 게이트-절연체-반도체의 구조를 가지는 트랜지스터의 제조방법 |
Publications (3)
Publication Number | Publication Date |
---|---|
ITRM910621A0 true ITRM910621A0 (it) | 1991-08-19 |
ITRM910621A1 ITRM910621A1 (it) | 1993-02-19 |
IT1250463B IT1250463B (it) | 1995-04-07 |
Family
ID=19302524
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ITRM910621A IT1250463B (it) | 1990-08-20 | 1991-08-19 | Procedimento per la fabbricazione di transistori con struttura gate -isolante -semiconduttore. |
Country Status (5)
Country | Link |
---|---|
KR (1) | KR920005242A (it) |
DE (1) | DE4114166A1 (it) |
FR (1) | FR2665980A1 (it) |
GB (1) | GB2247349A (it) |
IT (1) | IT1250463B (it) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0614226A1 (en) * | 1992-10-05 | 1994-09-07 | Texas Instruments Incorporated | Gate electrode using stacked layers of TiN and polysilicon |
US6084279A (en) * | 1997-03-31 | 2000-07-04 | Motorola Inc. | Semiconductor device having a metal containing layer overlying a gate dielectric |
KR100345364B1 (ko) * | 1998-12-28 | 2002-09-18 | 주식회사 하이닉스반도체 | 반도체 소자의 게이트전극 형성방법 |
JP3287403B2 (ja) * | 1999-02-19 | 2002-06-04 | 日本電気株式会社 | Mis型電界効果トランジスタ及びその製造方法 |
AU6918300A (en) * | 1999-09-24 | 2001-04-30 | Intel Corporation | A nonvolatile memory device with a high work function floating-gate and method of fabrication |
US6518618B1 (en) | 1999-12-03 | 2003-02-11 | Intel Corporation | Integrated memory cell and method of fabrication |
US6388327B1 (en) | 2001-01-09 | 2002-05-14 | International Business Machines Corporation | Capping layer for improved silicide formation in narrow semiconductor structures |
CN1296971C (zh) * | 2004-09-29 | 2007-01-24 | 中国科学院微电子研究所 | 一种适用于纳米器件制造的硅化物工艺 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3879746A (en) * | 1972-05-30 | 1975-04-22 | Bell Telephone Labor Inc | Gate metallization structure |
JPS57155775A (en) * | 1981-03-23 | 1982-09-25 | Hitachi Ltd | Semiconductor device |
JPS5925273A (ja) * | 1982-08-03 | 1984-02-09 | Toshiba Corp | 半導体装置及びその製造方法 |
US4605947A (en) * | 1983-03-07 | 1986-08-12 | Motorola Inc. | Titanium nitride MOS device gate electrode and method of producing |
US4570328A (en) * | 1983-03-07 | 1986-02-18 | Motorola, Inc. | Method of producing titanium nitride MOS device gate electrode |
JPH065733B2 (ja) * | 1984-08-27 | 1994-01-19 | アメリカン テレフオン アンド テレグラフ カムパニ− | 集積回路デバイスおよびその製造方法 |
GB2164491B (en) * | 1984-09-14 | 1988-04-07 | Stc Plc | Semiconductor devices |
JPS61208869A (ja) * | 1985-03-14 | 1986-09-17 | Nec Corp | 半導体装置及びその製造方法 |
DE3650170T2 (de) * | 1985-05-13 | 1995-05-18 | Toshiba Kawasaki Kk | Halbleiteranordnung mit Verbindungselektroden. |
JPS6254960A (ja) * | 1985-09-04 | 1987-03-10 | Nec Corp | Mis形電界効果トランジスタ |
US4707721A (en) * | 1986-02-20 | 1987-11-17 | Texas Instruments Incorporated | Passivated dual dielectric gate system and method for fabricating same |
JPS62219966A (ja) * | 1986-03-22 | 1987-09-28 | Toshiba Corp | 半導体装置 |
JPS63174371A (ja) * | 1987-01-13 | 1988-07-18 | Nec Corp | 電界効果トランジスタ |
JPH07109824B2 (ja) * | 1987-07-22 | 1995-11-22 | 松下電子工業株式会社 | 半導体装置の製造方法 |
US4990997A (en) * | 1988-04-20 | 1991-02-05 | Fujitsu Limited | Crystal grain diffusion barrier structure for a semiconductor device |
JPH0228377A (ja) * | 1988-06-09 | 1990-01-30 | Fujitsu Ltd | 半導体装置、電界効果トランジスタ、および、キャパシタの製造方法 |
JPH0687501B2 (ja) * | 1988-09-29 | 1994-11-02 | シャープ株式会社 | 半導体装置のゲート電極の製造方法 |
-
1990
- 1990-08-20 KR KR1019900012815A patent/KR920005242A/ko not_active IP Right Cessation
-
1991
- 1991-03-19 FR FR9103299A patent/FR2665980A1/fr active Pending
- 1991-04-30 DE DE4114166A patent/DE4114166A1/de active Pending
- 1991-08-08 GB GB9117195A patent/GB2247349A/en not_active Withdrawn
- 1991-08-19 IT ITRM910621A patent/IT1250463B/it active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
FR2665980A1 (fr) | 1992-02-21 |
GB9117195D0 (en) | 1991-09-25 |
ITRM910621A1 (it) | 1993-02-19 |
DE4114166A1 (de) | 1992-02-27 |
KR920005242A (ko) | 1992-03-28 |
IT1250463B (it) | 1995-04-07 |
GB2247349A (en) | 1992-02-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
0001 | Granted |