FR2341206B1 - - Google Patents
Info
- Publication number
- FR2341206B1 FR2341206B1 FR7703758A FR7703758A FR2341206B1 FR 2341206 B1 FR2341206 B1 FR 2341206B1 FR 7703758 A FR7703758 A FR 7703758A FR 7703758 A FR7703758 A FR 7703758A FR 2341206 B1 FR2341206 B1 FR 2341206B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P30/00—Ion implantation into wafers, substrates or parts of devices
- H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
- H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/01—Manufacture or treatment
- H10D10/051—Manufacture or treatment of vertical BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/40—Vertical BJTs
- H10D10/441—Vertical BJTs having an emitter-base junction ending at a main surface of the body and a base-collector junction ending at a lateral surface of the body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P30/00—Ion implantation into wafers, substrates or parts of devices
- H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
- H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
- H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2605641A DE2605641C3 (de) | 1976-02-12 | 1976-02-12 | Hochfrequenztransistor und Verfahren zu seiner Herstellung |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2341206A1 FR2341206A1 (fr) | 1977-09-09 |
| FR2341206B1 true FR2341206B1 (https=) | 1983-05-20 |
Family
ID=5969731
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7703758A Granted FR2341206A1 (fr) | 1976-02-12 | 1977-02-10 | Transistor a haute frequence |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4110779A (https=) |
| JP (1) | JPS5299078A (https=) |
| DE (1) | DE2605641C3 (https=) |
| FR (1) | FR2341206A1 (https=) |
| GB (1) | GB1530010A (https=) |
| IT (1) | IT1074663B (https=) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL7709363A (nl) * | 1977-08-25 | 1979-02-27 | Philips Nv | Werkwijze ter vervaardiging van een halfgeleider- inrichting en halfgeleiderinrichting vervaardigd onder toepassing van een dergelijke werkwijze. |
| US4228450A (en) * | 1977-10-25 | 1980-10-14 | International Business Machines Corporation | Buried high sheet resistance structure for high density integrated circuits with reach through contacts |
| US4196440A (en) * | 1978-05-25 | 1980-04-01 | International Business Machines Corporation | Lateral PNP or NPN with a high gain |
| JPS5852339B2 (ja) * | 1979-03-20 | 1983-11-22 | 富士通株式会社 | 半導体装置の製造方法 |
| US4677456A (en) * | 1979-05-25 | 1987-06-30 | Raytheon Company | Semiconductor structure and manufacturing method |
| US4289550A (en) * | 1979-05-25 | 1981-09-15 | Raytheon Company | Method of forming closely spaced device regions utilizing selective etching and diffusion |
| DE2922250A1 (de) * | 1979-05-31 | 1980-12-11 | Siemens Ag | Lichtsteuerbarer transistor |
| US4261763A (en) * | 1979-10-01 | 1981-04-14 | Burroughs Corporation | Fabrication of integrated circuits employing only ion implantation for all dopant layers |
| JPS57149770A (en) * | 1981-03-11 | 1982-09-16 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
| US4435225A (en) | 1981-05-11 | 1984-03-06 | Fairchild Camera & Instrument Corporation | Method of forming self-aligned lateral bipolar transistor |
| JPS5870570A (ja) * | 1981-09-28 | 1983-04-27 | Fujitsu Ltd | 半導体装置の製造方法 |
| US4624046A (en) * | 1982-01-04 | 1986-11-25 | Fairchild Camera & Instrument Corp. | Oxide isolation process for standard RAM/PROM and lateral PNP cell RAM |
| US4519128A (en) * | 1983-10-05 | 1985-05-28 | International Business Machines Corporation | Method of making a trench isolated device |
| US4547793A (en) * | 1983-12-27 | 1985-10-15 | International Business Machines Corporation | Trench-defined semiconductor structure |
| US4725562A (en) * | 1986-03-27 | 1988-02-16 | International Business Machines Corporation | Method of making a contact to a trench isolated device |
| IT1231913B (it) * | 1987-10-23 | 1992-01-15 | Sgs Microelettronica Spa | Procedimento di fabbricazione di transistori ad alta frequenza. |
| SE461428B (sv) * | 1988-06-16 | 1990-02-12 | Ericsson Telefon Ab L M | Foerfarande foer att paa ett underlag av halvledarmaterial framstaella en bipolaer transistor eller en bipolaer transistor och en faelteffekttransistor eller en bipolaer transistor och en faelteffekttransistor med en komplementaer faelteffekttransistor och anordningar framstaellda enligt foerfarandena |
| DE19962907A1 (de) | 1999-12-23 | 2001-07-05 | Basf Ag | Verfahren zur Herstellung von C¶10¶-C¶30¶-Alkenen durch partielle Hydrierung von Alkinen an Festbett-Palladium-Trägerkatalysatoren |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3648125A (en) * | 1971-02-02 | 1972-03-07 | Fairchild Camera Instr Co | Method of fabricating integrated circuits with oxidized isolation and the resulting structure |
| US4005453A (en) * | 1971-04-14 | 1977-01-25 | U.S. Philips Corporation | Semiconductor device with isolated circuit elements and method of making |
| SE373984B (https=) * | 1973-03-19 | 1975-02-17 | Ericsson Telefon Ab L M | |
| GB1457139A (en) * | 1973-09-27 | 1976-12-01 | Hitachi Ltd | Method of manufacturing semiconductor device |
| JPS5214594B2 (https=) * | 1973-10-17 | 1977-04-22 | ||
| CA1010157A (en) * | 1974-01-14 | 1977-05-10 | Bernard T. Murphy | Oxide isolated integrated circuit structure and method for fabricating |
-
1976
- 1976-02-12 DE DE2605641A patent/DE2605641C3/de not_active Expired
- 1976-11-05 GB GB46045/76A patent/GB1530010A/en not_active Expired
- 1976-12-13 US US05/749,609 patent/US4110779A/en not_active Expired - Lifetime
-
1977
- 1977-02-09 IT IT20093/77A patent/IT1074663B/it active
- 1977-02-10 JP JP1403277A patent/JPS5299078A/ja active Pending
- 1977-02-10 FR FR7703758A patent/FR2341206A1/fr active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| GB1530010A (en) | 1978-10-25 |
| DE2605641B2 (de) | 1979-04-19 |
| US4110779A (en) | 1978-08-29 |
| FR2341206A1 (fr) | 1977-09-09 |
| DE2605641A1 (de) | 1977-08-18 |
| IT1074663B (it) | 1985-04-20 |
| DE2605641C3 (de) | 1979-12-20 |
| JPS5299078A (en) | 1977-08-19 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |