FR2341206A1 - Transistor a haute frequence - Google Patents

Transistor a haute frequence

Info

Publication number
FR2341206A1
FR2341206A1 FR7703758A FR7703758A FR2341206A1 FR 2341206 A1 FR2341206 A1 FR 2341206A1 FR 7703758 A FR7703758 A FR 7703758A FR 7703758 A FR7703758 A FR 7703758A FR 2341206 A1 FR2341206 A1 FR 2341206A1
Authority
FR
France
Prior art keywords
high frequency
frequency transistor
transistor
frequency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7703758A
Other languages
English (en)
Other versions
FR2341206B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of FR2341206A1 publication Critical patent/FR2341206A1/fr
Application granted granted Critical
Publication of FR2341206B1 publication Critical patent/FR2341206B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1004—Base region of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66272—Silicon vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors
    • H01L29/7325—Vertical transistors having an emitter-base junction leaving at a main surface and a base-collector junction leaving at a peripheral surface of the body, e.g. mesa planar transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
FR7703758A 1976-02-12 1977-02-10 Transistor a haute frequence Granted FR2341206A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2605641A DE2605641C3 (de) 1976-02-12 1976-02-12 Hochfrequenztransistor und Verfahren zu seiner Herstellung

Publications (2)

Publication Number Publication Date
FR2341206A1 true FR2341206A1 (fr) 1977-09-09
FR2341206B1 FR2341206B1 (fr) 1983-05-20

Family

ID=5969731

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7703758A Granted FR2341206A1 (fr) 1976-02-12 1977-02-10 Transistor a haute frequence

Country Status (6)

Country Link
US (1) US4110779A (fr)
JP (1) JPS5299078A (fr)
DE (1) DE2605641C3 (fr)
FR (1) FR2341206A1 (fr)
GB (1) GB1530010A (fr)
IT (1) IT1074663B (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0017377A2 (fr) * 1979-03-20 1980-10-15 Fujitsu Limited Procédé de fabrication de transistors bipolaires isolés

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7709363A (nl) * 1977-08-25 1979-02-27 Philips Nv Werkwijze ter vervaardiging van een halfgeleider- inrichting en halfgeleiderinrichting vervaardigd onder toepassing van een dergelijke werkwijze.
US4228450A (en) * 1977-10-25 1980-10-14 International Business Machines Corporation Buried high sheet resistance structure for high density integrated circuits with reach through contacts
US4196440A (en) * 1978-05-25 1980-04-01 International Business Machines Corporation Lateral PNP or NPN with a high gain
US4677456A (en) * 1979-05-25 1987-06-30 Raytheon Company Semiconductor structure and manufacturing method
US4289550A (en) * 1979-05-25 1981-09-15 Raytheon Company Method of forming closely spaced device regions utilizing selective etching and diffusion
DE2922250A1 (de) * 1979-05-31 1980-12-11 Siemens Ag Lichtsteuerbarer transistor
US4261763A (en) * 1979-10-01 1981-04-14 Burroughs Corporation Fabrication of integrated circuits employing only ion implantation for all dopant layers
JPS57149770A (en) * 1981-03-11 1982-09-16 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS5870570A (ja) * 1981-09-28 1983-04-27 Fujitsu Ltd 半導体装置の製造方法
US4624046A (en) * 1982-01-04 1986-11-25 Fairchild Camera & Instrument Corp. Oxide isolation process for standard RAM/PROM and lateral PNP cell RAM
US4519128A (en) * 1983-10-05 1985-05-28 International Business Machines Corporation Method of making a trench isolated device
US4547793A (en) * 1983-12-27 1985-10-15 International Business Machines Corporation Trench-defined semiconductor structure
US4725562A (en) * 1986-03-27 1988-02-16 International Business Machines Corporation Method of making a contact to a trench isolated device
IT1231913B (it) * 1987-10-23 1992-01-15 Sgs Microelettronica Spa Procedimento di fabbricazione di transistori ad alta frequenza.
SE461428B (sv) * 1988-06-16 1990-02-12 Ericsson Telefon Ab L M Foerfarande foer att paa ett underlag av halvledarmaterial framstaella en bipolaer transistor eller en bipolaer transistor och en faelteffekttransistor eller en bipolaer transistor och en faelteffekttransistor med en komplementaer faelteffekttransistor och anordningar framstaellda enligt foerfarandena
DE19962907A1 (de) 1999-12-23 2001-07-05 Basf Ag Verfahren zur Herstellung von C¶10¶-C¶30¶-Alkenen durch partielle Hydrierung von Alkinen an Festbett-Palladium-Trägerkatalysatoren

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3648125A (en) * 1971-02-02 1972-03-07 Fairchild Camera Instr Co Method of fabricating integrated circuits with oxidized isolation and the resulting structure
FR2222757A1 (fr) * 1973-03-19 1974-10-18 Ericsson Telefon Ab L M
FR2258001A1 (fr) * 1974-01-14 1975-08-08 Western Electric Co

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4005453A (en) * 1971-04-14 1977-01-25 U.S. Philips Corporation Semiconductor device with isolated circuit elements and method of making
GB1457139A (en) * 1973-09-27 1976-12-01 Hitachi Ltd Method of manufacturing semiconductor device
JPS5214594B2 (fr) * 1973-10-17 1977-04-22

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3648125A (en) * 1971-02-02 1972-03-07 Fairchild Camera Instr Co Method of fabricating integrated circuits with oxidized isolation and the resulting structure
FR2222757A1 (fr) * 1973-03-19 1974-10-18 Ericsson Telefon Ab L M
FR2258001A1 (fr) * 1974-01-14 1975-08-08 Western Electric Co

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
EXBK/73 *
EXBK/75 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0017377A2 (fr) * 1979-03-20 1980-10-15 Fujitsu Limited Procédé de fabrication de transistors bipolaires isolés
EP0017377A3 (en) * 1979-03-20 1982-08-25 Fujitsu Limited Method of producing insulated bipolar transistors and bipolar transistors insulated by that method

Also Published As

Publication number Publication date
US4110779A (en) 1978-08-29
DE2605641B2 (de) 1979-04-19
DE2605641A1 (de) 1977-08-18
GB1530010A (en) 1978-10-25
DE2605641C3 (de) 1979-12-20
JPS5299078A (en) 1977-08-19
FR2341206B1 (fr) 1983-05-20
IT1074663B (it) 1985-04-20

Similar Documents

Publication Publication Date Title
FR2298342A1 (fr) Dispositif electrochirurgical a haute frequence
FR2285006A1 (fr) Laser a frequence stabilisee
FR2321069A1 (fr) Accouplement a haute performance
BR7505484A (pt) Transceptores-osciladores estabilizados em frequencia
FR2341206A1 (fr) Transistor a haute frequence
FR2294585A1 (fr) Synthetiseur de frequence
FR2332647A1 (fr) Oscillateur regle
FR2277460A1 (fr) Oscillateur a frequence variable
FR2353961A1 (fr) Oscillateur a quartz
BE849140A (fr) Doubleur de frequence
FR2350729A1 (fr) Melangeur haute frequence a symetrie complementaire
FR2305056A1 (fr) Oscillateurs stabilises
BE842505A (fr) Ballast a transistors a haute frequence
FR2315807A1 (fr) Dispositif de telecommunications a haute frequence
FR2335998A1 (fr) Oscillateur a transistor
SE396853B (sv) Tvapol innefattande en transistor
BE871000A (fr) Transformateur a haute frequence
FR2327670A1 (fr) Synthetiseur numerique de frequence
FR2333381A1 (fr) Discriminateur a modulation de frequence
IT1051262B (it) Sintonizzatore a sintesi di frequenza
IT1036298B (it) Disposizione circuitale includente un oscillatore sincronizzato
SE421728B (sv) Digistalstyrd oscillator
IT1057190B (it) Generatore di mocroonde a frequenza stabilizzata
IT1065169B (it) Oscillatore a transistore
FR2311392A1 (fr) Cable coaxial a haute frequence

Legal Events

Date Code Title Description
ST Notification of lapse