FR2341206A1 - Transistor a haute frequence - Google Patents

Transistor a haute frequence

Info

Publication number
FR2341206A1
FR2341206A1 FR7703758A FR7703758A FR2341206A1 FR 2341206 A1 FR2341206 A1 FR 2341206A1 FR 7703758 A FR7703758 A FR 7703758A FR 7703758 A FR7703758 A FR 7703758A FR 2341206 A1 FR2341206 A1 FR 2341206A1
Authority
FR
France
Prior art keywords
high frequency
frequency transistor
transistor
frequency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7703758A
Other languages
English (en)
French (fr)
Other versions
FR2341206B1 (https=
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of FR2341206A1 publication Critical patent/FR2341206A1/fr
Application granted granted Critical
Publication of FR2341206B1 publication Critical patent/FR2341206B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/051—Manufacture or treatment of vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H10D10/441—Vertical BJTs having an emitter-base junction ending at a main surface of the body and a base-collector junction ending at a lateral surface of the body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
FR7703758A 1976-02-12 1977-02-10 Transistor a haute frequence Granted FR2341206A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2605641A DE2605641C3 (de) 1976-02-12 1976-02-12 Hochfrequenztransistor und Verfahren zu seiner Herstellung

Publications (2)

Publication Number Publication Date
FR2341206A1 true FR2341206A1 (fr) 1977-09-09
FR2341206B1 FR2341206B1 (https=) 1983-05-20

Family

ID=5969731

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7703758A Granted FR2341206A1 (fr) 1976-02-12 1977-02-10 Transistor a haute frequence

Country Status (6)

Country Link
US (1) US4110779A (https=)
JP (1) JPS5299078A (https=)
DE (1) DE2605641C3 (https=)
FR (1) FR2341206A1 (https=)
GB (1) GB1530010A (https=)
IT (1) IT1074663B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0017377A3 (en) * 1979-03-20 1982-08-25 Fujitsu Limited Method of producing insulated bipolar transistors and bipolar transistors insulated by that method

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7709363A (nl) * 1977-08-25 1979-02-27 Philips Nv Werkwijze ter vervaardiging van een halfgeleider- inrichting en halfgeleiderinrichting vervaardigd onder toepassing van een dergelijke werkwijze.
US4228450A (en) * 1977-10-25 1980-10-14 International Business Machines Corporation Buried high sheet resistance structure for high density integrated circuits with reach through contacts
US4196440A (en) * 1978-05-25 1980-04-01 International Business Machines Corporation Lateral PNP or NPN with a high gain
US4677456A (en) * 1979-05-25 1987-06-30 Raytheon Company Semiconductor structure and manufacturing method
US4289550A (en) * 1979-05-25 1981-09-15 Raytheon Company Method of forming closely spaced device regions utilizing selective etching and diffusion
DE2922250A1 (de) * 1979-05-31 1980-12-11 Siemens Ag Lichtsteuerbarer transistor
US4261763A (en) * 1979-10-01 1981-04-14 Burroughs Corporation Fabrication of integrated circuits employing only ion implantation for all dopant layers
JPS57149770A (en) * 1981-03-11 1982-09-16 Mitsubishi Electric Corp Manufacture of semiconductor device
US4435225A (en) 1981-05-11 1984-03-06 Fairchild Camera & Instrument Corporation Method of forming self-aligned lateral bipolar transistor
JPS5870570A (ja) * 1981-09-28 1983-04-27 Fujitsu Ltd 半導体装置の製造方法
US4624046A (en) * 1982-01-04 1986-11-25 Fairchild Camera & Instrument Corp. Oxide isolation process for standard RAM/PROM and lateral PNP cell RAM
US4519128A (en) * 1983-10-05 1985-05-28 International Business Machines Corporation Method of making a trench isolated device
US4547793A (en) * 1983-12-27 1985-10-15 International Business Machines Corporation Trench-defined semiconductor structure
US4725562A (en) * 1986-03-27 1988-02-16 International Business Machines Corporation Method of making a contact to a trench isolated device
IT1231913B (it) * 1987-10-23 1992-01-15 Sgs Microelettronica Spa Procedimento di fabbricazione di transistori ad alta frequenza.
SE461428B (sv) * 1988-06-16 1990-02-12 Ericsson Telefon Ab L M Foerfarande foer att paa ett underlag av halvledarmaterial framstaella en bipolaer transistor eller en bipolaer transistor och en faelteffekttransistor eller en bipolaer transistor och en faelteffekttransistor med en komplementaer faelteffekttransistor och anordningar framstaellda enligt foerfarandena
DE19962907A1 (de) 1999-12-23 2001-07-05 Basf Ag Verfahren zur Herstellung von C¶10¶-C¶30¶-Alkenen durch partielle Hydrierung von Alkinen an Festbett-Palladium-Trägerkatalysatoren

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3648125A (en) * 1971-02-02 1972-03-07 Fairchild Camera Instr Co Method of fabricating integrated circuits with oxidized isolation and the resulting structure
FR2222757A1 (https=) * 1973-03-19 1974-10-18 Ericsson Telefon Ab L M
FR2258001A1 (https=) * 1974-01-14 1975-08-08 Western Electric Co

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4005453A (en) * 1971-04-14 1977-01-25 U.S. Philips Corporation Semiconductor device with isolated circuit elements and method of making
GB1457139A (en) * 1973-09-27 1976-12-01 Hitachi Ltd Method of manufacturing semiconductor device
JPS5214594B2 (https=) * 1973-10-17 1977-04-22

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3648125A (en) * 1971-02-02 1972-03-07 Fairchild Camera Instr Co Method of fabricating integrated circuits with oxidized isolation and the resulting structure
FR2222757A1 (https=) * 1973-03-19 1974-10-18 Ericsson Telefon Ab L M
FR2258001A1 (https=) * 1974-01-14 1975-08-08 Western Electric Co

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
EXBK/73 *
EXBK/75 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0017377A3 (en) * 1979-03-20 1982-08-25 Fujitsu Limited Method of producing insulated bipolar transistors and bipolar transistors insulated by that method

Also Published As

Publication number Publication date
GB1530010A (en) 1978-10-25
DE2605641B2 (de) 1979-04-19
US4110779A (en) 1978-08-29
DE2605641A1 (de) 1977-08-18
IT1074663B (it) 1985-04-20
DE2605641C3 (de) 1979-12-20
FR2341206B1 (https=) 1983-05-20
JPS5299078A (en) 1977-08-19

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Legal Events

Date Code Title Description
ST Notification of lapse