DE2604735A1 - Integrierter halbleiterbaustein - Google Patents
Integrierter halbleiterbausteinInfo
- Publication number
- DE2604735A1 DE2604735A1 DE19762604735 DE2604735A DE2604735A1 DE 2604735 A1 DE2604735 A1 DE 2604735A1 DE 19762604735 DE19762604735 DE 19762604735 DE 2604735 A DE2604735 A DE 2604735A DE 2604735 A1 DE2604735 A1 DE 2604735A1
- Authority
- DE
- Germany
- Prior art keywords
- region
- type
- conductivity type
- area
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims description 46
- 239000012535 impurity Substances 0.000 claims description 59
- 238000009792 diffusion process Methods 0.000 claims description 45
- 239000000758 substrate Substances 0.000 claims description 29
- 238000009413 insulation Methods 0.000 claims description 17
- 238000002955 isolation Methods 0.000 description 20
- 230000000295 complement effect Effects 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 230000015556 catabolic process Effects 0.000 description 8
- 230000003321 amplification Effects 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 7
- 239000002800 charge carrier Substances 0.000 description 7
- 238000003199 nucleic acid amplification method Methods 0.000 description 7
- 230000007704 transition Effects 0.000 description 7
- 230000000875 corresponding effect Effects 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 5
- 238000005036 potential barrier Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
- H10D84/0119—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including complementary BJTs
- H10D84/0121—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including complementary BJTs the complementary BJTs being vertical BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/67—Complementary BJTs
- H10D84/673—Vertical complementary BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50016561A JPS5914897B2 (ja) | 1975-02-08 | 1975-02-08 | 半導体装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2604735A1 true DE2604735A1 (de) | 1976-08-19 |
Family
ID=11919681
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19762604735 Withdrawn DE2604735A1 (de) | 1975-02-08 | 1976-02-06 | Integrierter halbleiterbaustein |
Country Status (8)
| Country | Link |
|---|---|
| JP (1) | JPS5914897B2 (enrdf_load_stackoverflow) |
| CA (1) | CA1048655A (enrdf_load_stackoverflow) |
| CH (1) | CH607332A5 (enrdf_load_stackoverflow) |
| DE (1) | DE2604735A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2300417A1 (enrdf_load_stackoverflow) |
| GB (1) | GB1533156A (enrdf_load_stackoverflow) |
| IT (1) | IT1055132B (enrdf_load_stackoverflow) |
| NL (1) | NL7601307A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0093304A1 (en) * | 1982-04-19 | 1983-11-09 | Matsushita Electric Industrial Co., Ltd. | Semiconductor IC and method of making the same |
| FR2581796A1 (fr) * | 1985-05-09 | 1986-11-14 | Sgs Microelettronica Spa | Circuit integre bipolaire comprenant des transistors pnp verticaux avec collecteur sur le substrat, et procede pour la realisation d'un tel circuit |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56126960A (en) * | 1980-03-11 | 1981-10-05 | Nec Corp | Manufacture of semiconductor device |
| JPS61164399U (enrdf_load_stackoverflow) * | 1985-03-30 | 1986-10-11 | ||
| JPS6386192U (enrdf_load_stackoverflow) * | 1986-11-19 | 1988-06-06 | ||
| EP0301468B1 (en) * | 1987-07-29 | 1993-08-25 | Fairchild Semiconductor Corporation | Process for fabricating complementary contactless vertical bipolar transistors |
| JPH02296994A (ja) * | 1989-05-09 | 1990-12-07 | Fujita Corp | 泥漿シールド機のカツターヘツド |
| JPH03128793U (enrdf_load_stackoverflow) * | 1990-04-10 | 1991-12-25 | ||
| JPH0450493U (enrdf_load_stackoverflow) * | 1990-08-31 | 1992-04-28 | ||
| FR3106931B1 (fr) | 2020-01-30 | 2022-02-18 | St Microelectronics Crolles 2 Sas | Procédé de fabrication d’un dispositif comprenant un transistor bipolaire PNP et un transistor bipolaire NPN pour applications radiofréquences |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5147583B2 (enrdf_load_stackoverflow) * | 1972-12-29 | 1976-12-15 |
-
1975
- 1975-02-08 JP JP50016561A patent/JPS5914897B2/ja not_active Expired
-
1976
- 1976-02-04 GB GB4400/76A patent/GB1533156A/en not_active Expired
- 1976-02-05 IT IT19950/76A patent/IT1055132B/it active
- 1976-02-05 CA CA76245057A patent/CA1048655A/en not_active Expired
- 1976-02-06 CH CH146276A patent/CH607332A5/xx not_active IP Right Cessation
- 1976-02-06 FR FR7603362A patent/FR2300417A1/fr active Granted
- 1976-02-06 DE DE19762604735 patent/DE2604735A1/de not_active Withdrawn
- 1976-02-09 NL NL7601307A patent/NL7601307A/xx not_active Application Discontinuation
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0093304A1 (en) * | 1982-04-19 | 1983-11-09 | Matsushita Electric Industrial Co., Ltd. | Semiconductor IC and method of making the same |
| FR2581796A1 (fr) * | 1985-05-09 | 1986-11-14 | Sgs Microelettronica Spa | Circuit integre bipolaire comprenant des transistors pnp verticaux avec collecteur sur le substrat, et procede pour la realisation d'un tel circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| CA1048655A (en) | 1979-02-13 |
| FR2300417A1 (fr) | 1976-09-03 |
| JPS5191680A (enrdf_load_stackoverflow) | 1976-08-11 |
| FR2300417B1 (enrdf_load_stackoverflow) | 1980-03-21 |
| NL7601307A (nl) | 1976-08-10 |
| GB1533156A (en) | 1978-11-22 |
| JPS5914897B2 (ja) | 1984-04-06 |
| IT1055132B (it) | 1981-12-21 |
| CH607332A5 (enrdf_load_stackoverflow) | 1978-12-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8141 | Disposal/no request for examination |