FR2300417A1 - Circuit semi-conducteur integre a transistors complementaires pnp-npn - Google Patents
Circuit semi-conducteur integre a transistors complementaires pnp-npnInfo
- Publication number
- FR2300417A1 FR2300417A1 FR7603362A FR7603362A FR2300417A1 FR 2300417 A1 FR2300417 A1 FR 2300417A1 FR 7603362 A FR7603362 A FR 7603362A FR 7603362 A FR7603362 A FR 7603362A FR 2300417 A1 FR2300417 A1 FR 2300417A1
- Authority
- FR
- France
- Prior art keywords
- semiconductor circuit
- integrated semiconductor
- npn transistors
- complementary pnp
- pnp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000000295 complement effect Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
- H10D84/0119—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including complementary BJTs
- H10D84/0121—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including complementary BJTs the complementary BJTs being vertical BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/67—Complementary BJTs
- H10D84/673—Vertical complementary BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50016561A JPS5914897B2 (ja) | 1975-02-08 | 1975-02-08 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2300417A1 true FR2300417A1 (fr) | 1976-09-03 |
| FR2300417B1 FR2300417B1 (enrdf_load_stackoverflow) | 1980-03-21 |
Family
ID=11919681
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7603362A Granted FR2300417A1 (fr) | 1975-02-08 | 1976-02-06 | Circuit semi-conducteur integre a transistors complementaires pnp-npn |
Country Status (8)
| Country | Link |
|---|---|
| JP (1) | JPS5914897B2 (enrdf_load_stackoverflow) |
| CA (1) | CA1048655A (enrdf_load_stackoverflow) |
| CH (1) | CH607332A5 (enrdf_load_stackoverflow) |
| DE (1) | DE2604735A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2300417A1 (enrdf_load_stackoverflow) |
| GB (1) | GB1533156A (enrdf_load_stackoverflow) |
| IT (1) | IT1055132B (enrdf_load_stackoverflow) |
| NL (1) | NL7601307A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0301468A3 (en) * | 1987-07-29 | 1989-10-04 | Fairchild Semiconductor Corporation | Process for fabricating complementary contactless vertical bipolar transistors |
| CN113206040A (zh) * | 2020-01-30 | 2021-08-03 | 意法半导体(克洛尔2)公司 | 制造包括pnp双极晶体管和npn双极晶体管的器件的方法 |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56126960A (en) * | 1980-03-11 | 1981-10-05 | Nec Corp | Manufacture of semiconductor device |
| DE3361832D1 (en) * | 1982-04-19 | 1986-02-27 | Matsushita Electric Ind Co Ltd | Semiconductor ic and method of making the same |
| JPS61164399U (enrdf_load_stackoverflow) * | 1985-03-30 | 1986-10-11 | ||
| IT1218471B (it) * | 1985-05-09 | 1990-04-19 | Ates Componenti Elettron | Circuito integrato bipolare comprendente transistori pnp verticali con collettore sul substrato |
| JPS6386192U (enrdf_load_stackoverflow) * | 1986-11-19 | 1988-06-06 | ||
| JPH02296994A (ja) * | 1989-05-09 | 1990-12-07 | Fujita Corp | 泥漿シールド機のカツターヘツド |
| JPH03128793U (enrdf_load_stackoverflow) * | 1990-04-10 | 1991-12-25 | ||
| JPH0450493U (enrdf_load_stackoverflow) * | 1990-08-31 | 1992-04-28 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5147583B2 (enrdf_load_stackoverflow) * | 1972-12-29 | 1976-12-15 |
-
1975
- 1975-02-08 JP JP50016561A patent/JPS5914897B2/ja not_active Expired
-
1976
- 1976-02-04 GB GB4400/76A patent/GB1533156A/en not_active Expired
- 1976-02-05 CA CA76245057A patent/CA1048655A/en not_active Expired
- 1976-02-05 IT IT19950/76A patent/IT1055132B/it active
- 1976-02-06 CH CH146276A patent/CH607332A5/xx not_active IP Right Cessation
- 1976-02-06 FR FR7603362A patent/FR2300417A1/fr active Granted
- 1976-02-06 DE DE19762604735 patent/DE2604735A1/de not_active Withdrawn
- 1976-02-09 NL NL7601307A patent/NL7601307A/xx not_active Application Discontinuation
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0301468A3 (en) * | 1987-07-29 | 1989-10-04 | Fairchild Semiconductor Corporation | Process for fabricating complementary contactless vertical bipolar transistors |
| CN113206040A (zh) * | 2020-01-30 | 2021-08-03 | 意法半导体(克洛尔2)公司 | 制造包括pnp双极晶体管和npn双极晶体管的器件的方法 |
| FR3106931A1 (fr) * | 2020-01-30 | 2021-08-06 | Stmicroelectronics (Crolles 2) Sas | Procédé de fabrication d’un dispositif comprenant un transistor bipolaire PNP et un transistor bipolaire NPN pour applications radiofréquences |
| US11538719B2 (en) | 2020-01-30 | 2022-12-27 | Stmicroelectronics (Crolles 2) Sas | Method for fabricating a device comprising a PNP bipolar transistor and NPN bipolar transistor for radiofrequency applications |
| US11955481B2 (en) | 2020-01-30 | 2024-04-09 | Stmicroelectronics (Crolles 2) Sas | Device comprising a PNP bipolar transistor and NPN bipolar transistor for radiofrequency applications |
| CN113206040B (zh) * | 2020-01-30 | 2024-11-22 | 意法半导体(克洛尔2)公司 | 制造包括pnp双极晶体管和npn双极晶体管的器件的方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| NL7601307A (nl) | 1976-08-10 |
| DE2604735A1 (de) | 1976-08-19 |
| GB1533156A (en) | 1978-11-22 |
| JPS5914897B2 (ja) | 1984-04-06 |
| CH607332A5 (enrdf_load_stackoverflow) | 1978-12-15 |
| JPS5191680A (enrdf_load_stackoverflow) | 1976-08-11 |
| IT1055132B (it) | 1981-12-21 |
| FR2300417B1 (enrdf_load_stackoverflow) | 1980-03-21 |
| CA1048655A (en) | 1979-02-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| FR2336801A1 (fr) | Circuit integre | |
| DK479576A (da) | Transistortendingskredslob | |
| IT1070004B (it) | Circuito integrato semiconduttore perfezionato | |
| BE843622A (fr) | Circuit integre bipolaire | |
| SE7602480L (sv) | Halvledararrangemang for logikkretsar | |
| IT1049770B (it) | Dispositivo a circuito integrato a semiconduttori | |
| FR2313777A1 (fr) | Agencement semi-conducteur integre | |
| SE413216B (sv) | Sammansatt transistorkrets | |
| FR2335052A1 (fr) | Circuit integre | |
| IT1056855B (it) | Disposizione circuitale a semi conduttori intergrata | |
| BE824510A (fr) | Circuit de transistors combines | |
| FR2350728A1 (fr) | Circuit melangeur a transistors complementaires | |
| FR2300417A1 (fr) | Circuit semi-conducteur integre a transistors complementaires pnp-npn | |
| BE840685A (fr) | Circuits a semi-conducteurs | |
| GB1542096A (en) | Monolithically integrated semiconductor circuit arrangement | |
| SE7605316L (sv) | Integrerad kopplingskrets | |
| IT1057752B (it) | Cirsuito rivelatore a transistori | |
| IT1058422B (it) | Invertitore omos contenente due transistori mos complementari | |
| FR2313799A1 (fr) | Inverseur a transistors | |
| NL188724C (nl) | Transistorinvertorschakeling. | |
| NL7603827A (nl) | Geintegreerde schakeling. | |
| FR2353960A1 (fr) | Circuit logique a transistors schottky | |
| IT1126588B (it) | Disposizione circuitale a transistor mos intergrata | |
| NL7602373A (nl) | Geintegreerde halfgeleiderschakelingen. | |
| NL161631C (nl) | Vermogensversterkerschakeling met transistoren. |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |