CA1048655A - Semiconductor integrated circuit device - Google Patents
Semiconductor integrated circuit deviceInfo
- Publication number
- CA1048655A CA1048655A CA76245057A CA245057A CA1048655A CA 1048655 A CA1048655 A CA 1048655A CA 76245057 A CA76245057 A CA 76245057A CA 245057 A CA245057 A CA 245057A CA 1048655 A CA1048655 A CA 1048655A
- Authority
- CA
- Canada
- Prior art keywords
- region
- conductivity type
- type
- transistor
- concentration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 41
- 239000012535 impurity Substances 0.000 claims abstract description 64
- 238000009792 diffusion process Methods 0.000 claims abstract description 46
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 238000002955 isolation Methods 0.000 claims description 39
- 230000015572 biosynthetic process Effects 0.000 claims description 25
- 239000000969 carrier Substances 0.000 claims description 14
- 230000004888 barrier function Effects 0.000 claims description 11
- 230000015556 catabolic process Effects 0.000 claims 1
- 230000005684 electric field Effects 0.000 claims 1
- 230000000295 complement effect Effects 0.000 abstract description 13
- 238000010276 construction Methods 0.000 abstract description 3
- 230000012010 growth Effects 0.000 description 57
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 238000005468 ion implantation Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000005036 potential barrier Methods 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 229910052681 coesite Inorganic materials 0.000 description 4
- 229910052906 cristobalite Inorganic materials 0.000 description 4
- 229910052682 stishovite Inorganic materials 0.000 description 4
- 229910052905 tridymite Inorganic materials 0.000 description 4
- 230000003321 amplification Effects 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 241000353097 Molva molva Species 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- KRTSDMXIXPKRQR-AATRIKPKSA-N monocrotophos Chemical compound CNC(=O)\C=C(/C)OP(=O)(OC)OC KRTSDMXIXPKRQR-AATRIKPKSA-N 0.000 description 1
- 229920000136 polysorbate Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
- H10D84/0119—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including complementary BJTs
- H10D84/0121—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including complementary BJTs the complementary BJTs being vertical BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/67—Complementary BJTs
- H10D84/673—Vertical complementary BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50016561A JPS5914897B2 (ja) | 1975-02-08 | 1975-02-08 | 半導体装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1048655A true CA1048655A (en) | 1979-02-13 |
Family
ID=11919681
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA76245057A Expired CA1048655A (en) | 1975-02-08 | 1976-02-05 | Semiconductor integrated circuit device |
Country Status (8)
| Country | Link |
|---|---|
| JP (1) | JPS5914897B2 (enrdf_load_stackoverflow) |
| CA (1) | CA1048655A (enrdf_load_stackoverflow) |
| CH (1) | CH607332A5 (enrdf_load_stackoverflow) |
| DE (1) | DE2604735A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2300417A1 (enrdf_load_stackoverflow) |
| GB (1) | GB1533156A (enrdf_load_stackoverflow) |
| IT (1) | IT1055132B (enrdf_load_stackoverflow) |
| NL (1) | NL7601307A (enrdf_load_stackoverflow) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56126960A (en) * | 1980-03-11 | 1981-10-05 | Nec Corp | Manufacture of semiconductor device |
| EP0093304B1 (en) * | 1982-04-19 | 1986-01-15 | Matsushita Electric Industrial Co., Ltd. | Semiconductor ic and method of making the same |
| JPS61164399U (enrdf_load_stackoverflow) * | 1985-03-30 | 1986-10-11 | ||
| IT1218471B (it) * | 1985-05-09 | 1990-04-19 | Ates Componenti Elettron | Circuito integrato bipolare comprendente transistori pnp verticali con collettore sul substrato |
| JPS6386192U (enrdf_load_stackoverflow) * | 1986-11-19 | 1988-06-06 | ||
| DE3883459T2 (de) * | 1987-07-29 | 1994-03-17 | Fairchild Semiconductor | Verfahren zum Herstellen komplementärer kontaktloser vertikaler Bipolartransistoren. |
| JPH02296994A (ja) * | 1989-05-09 | 1990-12-07 | Fujita Corp | 泥漿シールド機のカツターヘツド |
| JPH03128793U (enrdf_load_stackoverflow) * | 1990-04-10 | 1991-12-25 | ||
| JPH0450493U (enrdf_load_stackoverflow) * | 1990-08-31 | 1992-04-28 | ||
| FR3106931B1 (fr) | 2020-01-30 | 2022-02-18 | St Microelectronics Crolles 2 Sas | Procédé de fabrication d’un dispositif comprenant un transistor bipolaire PNP et un transistor bipolaire NPN pour applications radiofréquences |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5147583B2 (enrdf_load_stackoverflow) * | 1972-12-29 | 1976-12-15 |
-
1975
- 1975-02-08 JP JP50016561A patent/JPS5914897B2/ja not_active Expired
-
1976
- 1976-02-04 GB GB4400/76A patent/GB1533156A/en not_active Expired
- 1976-02-05 CA CA76245057A patent/CA1048655A/en not_active Expired
- 1976-02-05 IT IT19950/76A patent/IT1055132B/it active
- 1976-02-06 FR FR7603362A patent/FR2300417A1/fr active Granted
- 1976-02-06 DE DE19762604735 patent/DE2604735A1/de not_active Withdrawn
- 1976-02-06 CH CH146276A patent/CH607332A5/xx not_active IP Right Cessation
- 1976-02-09 NL NL7601307A patent/NL7601307A/xx not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| CH607332A5 (enrdf_load_stackoverflow) | 1978-12-15 |
| NL7601307A (nl) | 1976-08-10 |
| GB1533156A (en) | 1978-11-22 |
| JPS5914897B2 (ja) | 1984-04-06 |
| DE2604735A1 (de) | 1976-08-19 |
| FR2300417A1 (fr) | 1976-09-03 |
| JPS5191680A (enrdf_load_stackoverflow) | 1976-08-11 |
| FR2300417B1 (enrdf_load_stackoverflow) | 1980-03-21 |
| IT1055132B (it) | 1981-12-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4038680A (en) | Semiconductor integrated circuit device | |
| US4826780A (en) | Method of making bipolar transistors | |
| EP0809293B1 (en) | Power semiconductor structure with lateral transistor driven by vertical transistor | |
| US5565701A (en) | Integrated circuit with vertical bipolar power transistors and isolated lateral bipolar control transistors | |
| US6093613A (en) | Method for making high gain lateral PNP and NPN bipolar transistor compatible with CMOS for making BICMOS circuits | |
| US6245609B1 (en) | High voltage transistor using P+ buried layer | |
| US5132235A (en) | Method for fabricating a high voltage MOS transistor | |
| US7164160B2 (en) | Integrated circuit device with a vertical JFET | |
| CA1048655A (en) | Semiconductor integrated circuit device | |
| GB2156583A (en) | Process for producing semiconductor device | |
| US4966858A (en) | Method of fabricating a lateral semiconductor structure including field plates for self-alignment | |
| KR920001655A (ko) | 바이폴라 트랜지스터용 자기정렬된 콜렉터 구조 및 이를 주입하는 방법 | |
| US3770519A (en) | Isolation diffusion method for making reduced beta transistor or diodes | |
| CA1161964A (en) | Quasi-symmetrical bipolar transistor structure | |
| JPH0582986B2 (enrdf_load_stackoverflow) | ||
| CA1116309A (en) | Structure and process for optimizing the characteristics of i.sup.2l devices | |
| KR920010434B1 (ko) | 바이폴라 트랜지스터와 iil을 갖는 반도체 장치 | |
| US6291304B1 (en) | Method of fabricating a high voltage transistor using P+ buried layer | |
| EP0881689B1 (en) | PNP lateral bipolar electronic device and corresponding manufacturing process | |
| US6894367B2 (en) | Vertical bipolar transistor | |
| CA1056070A (en) | Method of making an ic structure having both power and signal components | |
| US20040120085A1 (en) | Semiconductor device with surge protection circuit | |
| US6917077B2 (en) | Protection diode for improved ruggedness of a radio frequency power transistor and self-defining method to manufacture such protection diode | |
| US20030060012A1 (en) | Electronic power device monolithically integrated on a semiconductor and comprising a first power region and at least a second region as well as an isolation structure of limited planar dimension | |
| KR880002271A (ko) | Vlsi 자기-정합식 바이폴라 트랜지스터 |