GB1533156A - Semiconductor integrated circuits - Google Patents
Semiconductor integrated circuitsInfo
- Publication number
- GB1533156A GB1533156A GB4400/76A GB440076A GB1533156A GB 1533156 A GB1533156 A GB 1533156A GB 4400/76 A GB4400/76 A GB 4400/76A GB 440076 A GB440076 A GB 440076A GB 1533156 A GB1533156 A GB 1533156A
- Authority
- GB
- United Kingdom
- Prior art keywords
- region
- type
- layer
- buried
- epitaxial layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 230000000295 complement effect Effects 0.000 abstract 6
- 239000000758 substrate Substances 0.000 abstract 3
- 238000009792 diffusion process Methods 0.000 abstract 2
- 239000000969 carrier Substances 0.000 abstract 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 238000002955 isolation Methods 0.000 abstract 1
- 238000005036 potential barrier Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
- H10D84/0119—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including complementary BJTs
- H10D84/0121—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including complementary BJTs the complementary BJTs being vertical BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/67—Complementary BJTs
- H10D84/673—Vertical complementary BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50016561A JPS5914897B2 (ja) | 1975-02-08 | 1975-02-08 | 半導体装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1533156A true GB1533156A (en) | 1978-11-22 |
Family
ID=11919681
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB4400/76A Expired GB1533156A (en) | 1975-02-08 | 1976-02-04 | Semiconductor integrated circuits |
Country Status (8)
| Country | Link |
|---|---|
| JP (1) | JPS5914897B2 (enrdf_load_stackoverflow) |
| CA (1) | CA1048655A (enrdf_load_stackoverflow) |
| CH (1) | CH607332A5 (enrdf_load_stackoverflow) |
| DE (1) | DE2604735A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2300417A1 (enrdf_load_stackoverflow) |
| GB (1) | GB1533156A (enrdf_load_stackoverflow) |
| IT (1) | IT1055132B (enrdf_load_stackoverflow) |
| NL (1) | NL7601307A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2175138A (en) * | 1985-05-09 | 1986-11-19 | Sgs Microelettronica Spa | Bipolar integrated circuits |
| US11538719B2 (en) | 2020-01-30 | 2022-12-27 | Stmicroelectronics (Crolles 2) Sas | Method for fabricating a device comprising a PNP bipolar transistor and NPN bipolar transistor for radiofrequency applications |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56126960A (en) * | 1980-03-11 | 1981-10-05 | Nec Corp | Manufacture of semiconductor device |
| DE3361832D1 (en) * | 1982-04-19 | 1986-02-27 | Matsushita Electric Ind Co Ltd | Semiconductor ic and method of making the same |
| JPS61164399U (enrdf_load_stackoverflow) * | 1985-03-30 | 1986-10-11 | ||
| JPS6386192U (enrdf_load_stackoverflow) * | 1986-11-19 | 1988-06-06 | ||
| EP0301468B1 (en) * | 1987-07-29 | 1993-08-25 | Fairchild Semiconductor Corporation | Process for fabricating complementary contactless vertical bipolar transistors |
| JPH02296994A (ja) * | 1989-05-09 | 1990-12-07 | Fujita Corp | 泥漿シールド機のカツターヘツド |
| JPH03128793U (enrdf_load_stackoverflow) * | 1990-04-10 | 1991-12-25 | ||
| JPH0450493U (enrdf_load_stackoverflow) * | 1990-08-31 | 1992-04-28 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5147583B2 (enrdf_load_stackoverflow) * | 1972-12-29 | 1976-12-15 |
-
1975
- 1975-02-08 JP JP50016561A patent/JPS5914897B2/ja not_active Expired
-
1976
- 1976-02-04 GB GB4400/76A patent/GB1533156A/en not_active Expired
- 1976-02-05 CA CA76245057A patent/CA1048655A/en not_active Expired
- 1976-02-05 IT IT19950/76A patent/IT1055132B/it active
- 1976-02-06 CH CH146276A patent/CH607332A5/xx not_active IP Right Cessation
- 1976-02-06 FR FR7603362A patent/FR2300417A1/fr active Granted
- 1976-02-06 DE DE19762604735 patent/DE2604735A1/de not_active Withdrawn
- 1976-02-09 NL NL7601307A patent/NL7601307A/xx not_active Application Discontinuation
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2175138A (en) * | 1985-05-09 | 1986-11-19 | Sgs Microelettronica Spa | Bipolar integrated circuits |
| GB2175138B (en) * | 1985-05-09 | 1989-04-19 | Sgs Microelettronica Spa | Bipolar integrated circuits |
| US11538719B2 (en) | 2020-01-30 | 2022-12-27 | Stmicroelectronics (Crolles 2) Sas | Method for fabricating a device comprising a PNP bipolar transistor and NPN bipolar transistor for radiofrequency applications |
| US11955481B2 (en) | 2020-01-30 | 2024-04-09 | Stmicroelectronics (Crolles 2) Sas | Device comprising a PNP bipolar transistor and NPN bipolar transistor for radiofrequency applications |
Also Published As
| Publication number | Publication date |
|---|---|
| NL7601307A (nl) | 1976-08-10 |
| FR2300417A1 (fr) | 1976-09-03 |
| DE2604735A1 (de) | 1976-08-19 |
| JPS5914897B2 (ja) | 1984-04-06 |
| CH607332A5 (enrdf_load_stackoverflow) | 1978-12-15 |
| JPS5191680A (enrdf_load_stackoverflow) | 1976-08-11 |
| IT1055132B (it) | 1981-12-21 |
| FR2300417B1 (enrdf_load_stackoverflow) | 1980-03-21 |
| CA1048655A (en) | 1979-02-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5066602A (en) | Method of making semiconductor ic including polar transistors | |
| US4220961A (en) | Monolithic combination of two complementary bipolar transistors | |
| GB1263127A (en) | Integrated circuits | |
| US4323913A (en) | Integrated semiconductor circuit arrangement | |
| GB1533156A (en) | Semiconductor integrated circuits | |
| US3770519A (en) | Isolation diffusion method for making reduced beta transistor or diodes | |
| GB1260977A (en) | Improvements in semiconductor devices | |
| GB1505103A (en) | Semiconductor device having complementary transistors and method of manufacturing same | |
| GB1279917A (en) | Improvements in or relating to integrated circuits which have a multiple emitter transistor | |
| GB1264260A (en) | Improvements in monolithic integrated circuit memories | |
| US4197147A (en) | Method of manufacturing an integrated circuit including an analog circuit and an I2 L circuit utilizing staged diffusion techniques | |
| GB1496306A (en) | Semiconductor integrated circuit including an epitaxial base type vertical transistor | |
| GB1514578A (en) | Semiconductor devices | |
| JPS6133261B2 (enrdf_load_stackoverflow) | ||
| GB1446386A (en) | Single bipolar transistor memory cell and methods of operation and fabrication | |
| GB1319037A (en) | Transistors | |
| GB1429696A (enrdf_load_stackoverflow) | ||
| US5581096A (en) | Integrated semiconductor device having a thyristor | |
| GB1252097A (enrdf_load_stackoverflow) | ||
| JP2833913B2 (ja) | バイポーラ集積回路装置 | |
| JP2763432B2 (ja) | 半導体装置 | |
| JP2518880B2 (ja) | 半導体装置 | |
| JP2558472B2 (ja) | 半導体集積回路 | |
| JPS6025905B2 (ja) | 半導体装置 | |
| JPS5533007A (en) | Semiconductor intergated circuit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 19940204 |