GB1429696A - - Google Patents

Info

Publication number
GB1429696A
GB1429696A GB4475173A GB4475173A GB1429696A GB 1429696 A GB1429696 A GB 1429696A GB 4475173 A GB4475173 A GB 4475173A GB 4475173 A GB4475173 A GB 4475173A GB 1429696 A GB1429696 A GB 1429696A
Authority
GB
United Kingdom
Prior art keywords
region
substrate
epitaxial layer
type
insulation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4475173A
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of GB1429696A publication Critical patent/GB1429696A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/212Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
    • H01L23/485Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes) consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/615Combinations of vertical BJTs and one or more of resistors or capacitors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
  • Bipolar Integrated Circuits (AREA)
GB4475173A 1972-09-25 1973-09-24 Expired GB1429696A (enrdf_load_stackoverflow)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP47096007A JPS521877B2 (enrdf_load_stackoverflow) 1972-09-25 1972-09-25

Publications (1)

Publication Number Publication Date
GB1429696A true GB1429696A (enrdf_load_stackoverflow) 1976-03-24

Family

ID=14153103

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4475173A Expired GB1429696A (enrdf_load_stackoverflow) 1972-09-25 1973-09-24

Country Status (7)

Country Link
JP (1) JPS521877B2 (enrdf_load_stackoverflow)
CA (1) CA1004780A (enrdf_load_stackoverflow)
DE (1) DE2348262A1 (enrdf_load_stackoverflow)
FR (1) FR2200636B1 (enrdf_load_stackoverflow)
GB (1) GB1429696A (enrdf_load_stackoverflow)
IT (1) IT994322B (enrdf_load_stackoverflow)
NL (1) NL184814C (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5994450A (ja) * 1982-11-19 1984-05-31 Nec Kyushu Ltd 半導体装置の製造方法
US5177587A (en) * 1989-07-21 1993-01-05 Linear Technology Corporation Push-back junction isolation semiconductor structure and method
JP5497298B2 (ja) * 2009-01-16 2014-05-21 久光製薬株式会社 シート状貼付剤
JP5974978B2 (ja) 2013-05-29 2016-08-23 信越半導体株式会社 シリコン単結晶製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1539873B2 (de) * 1966-10-18 1971-03-11 Deutsche Itt Industries Gmbh, 7800 Freiburg Transistor
US3544863A (en) * 1968-10-29 1970-12-01 Motorola Inc Monolithic integrated circuit substructure with epitaxial decoupling capacitance
FR2036530A5 (enrdf_load_stackoverflow) * 1969-03-24 1970-12-24 Radiotechnique Compelec

Also Published As

Publication number Publication date
FR2200636A1 (enrdf_load_stackoverflow) 1974-04-19
NL184814C (nl) 1989-11-01
JPS521877B2 (enrdf_load_stackoverflow) 1977-01-18
JPS4953386A (enrdf_load_stackoverflow) 1974-05-23
NL184814B (nl) 1989-06-01
FR2200636B1 (enrdf_load_stackoverflow) 1978-06-30
DE2348262A1 (de) 1974-04-18
NL7313221A (enrdf_load_stackoverflow) 1974-03-27
IT994322B (it) 1975-10-20
CA1004780A (en) 1977-02-01

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PE20 Patent expired after termination of 20 years

Effective date: 19930923