JPS5191680A - - Google Patents

Info

Publication number
JPS5191680A
JPS5191680A JP50016561A JP1656175A JPS5191680A JP S5191680 A JPS5191680 A JP S5191680A JP 50016561 A JP50016561 A JP 50016561A JP 1656175 A JP1656175 A JP 1656175A JP S5191680 A JPS5191680 A JP S5191680A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50016561A
Other languages
Japanese (ja)
Other versions
JPS5914897B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP50016561A priority Critical patent/JPS5914897B2/ja
Priority to US05/654,758 priority patent/US4038680A/en
Priority to GB4400/76A priority patent/GB1533156A/en
Priority to IT19950/76A priority patent/IT1055132B/it
Priority to CA76245057A priority patent/CA1048655A/en
Priority to CH146276A priority patent/CH607332A5/xx
Priority to DE19762604735 priority patent/DE2604735A1/de
Priority to FR7603362A priority patent/FR2300417A1/fr
Priority to NL7601307A priority patent/NL7601307A/xx
Publication of JPS5191680A publication Critical patent/JPS5191680A/ja
Publication of JPS5914897B2 publication Critical patent/JPS5914897B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H10D84/0119—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including complementary BJTs
    • H10D84/0121—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including complementary BJTs the complementary BJTs being vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/67—Complementary BJTs
    • H10D84/673—Vertical complementary BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP50016561A 1972-12-29 1975-02-08 半導体装置 Expired JPS5914897B2 (ja)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP50016561A JPS5914897B2 (ja) 1975-02-08 1975-02-08 半導体装置
US05/654,758 US4038680A (en) 1972-12-29 1976-02-03 Semiconductor integrated circuit device
GB4400/76A GB1533156A (en) 1975-02-08 1976-02-04 Semiconductor integrated circuits
IT19950/76A IT1055132B (it) 1975-02-08 1976-02-05 Dispositivo semiconduttore a circuito intergrato
CA76245057A CA1048655A (en) 1975-02-08 1976-02-05 Semiconductor integrated circuit device
CH146276A CH607332A5 (enrdf_load_stackoverflow) 1975-02-08 1976-02-06
DE19762604735 DE2604735A1 (de) 1975-02-08 1976-02-06 Integrierter halbleiterbaustein
FR7603362A FR2300417A1 (fr) 1975-02-08 1976-02-06 Circuit semi-conducteur integre a transistors complementaires pnp-npn
NL7601307A NL7601307A (nl) 1975-02-08 1976-02-09 Halfgeleiderinrichting met geintegreerde schakeling.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50016561A JPS5914897B2 (ja) 1975-02-08 1975-02-08 半導体装置

Publications (2)

Publication Number Publication Date
JPS5191680A true JPS5191680A (enrdf_load_stackoverflow) 1976-08-11
JPS5914897B2 JPS5914897B2 (ja) 1984-04-06

Family

ID=11919681

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50016561A Expired JPS5914897B2 (ja) 1972-12-29 1975-02-08 半導体装置

Country Status (8)

Country Link
JP (1) JPS5914897B2 (enrdf_load_stackoverflow)
CA (1) CA1048655A (enrdf_load_stackoverflow)
CH (1) CH607332A5 (enrdf_load_stackoverflow)
DE (1) DE2604735A1 (enrdf_load_stackoverflow)
FR (1) FR2300417A1 (enrdf_load_stackoverflow)
GB (1) GB1533156A (enrdf_load_stackoverflow)
IT (1) IT1055132B (enrdf_load_stackoverflow)
NL (1) NL7601307A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56126960A (en) * 1980-03-11 1981-10-05 Nec Corp Manufacture of semiconductor device

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0093304B1 (en) * 1982-04-19 1986-01-15 Matsushita Electric Industrial Co., Ltd. Semiconductor ic and method of making the same
JPS61164399U (enrdf_load_stackoverflow) * 1985-03-30 1986-10-11
IT1218471B (it) * 1985-05-09 1990-04-19 Ates Componenti Elettron Circuito integrato bipolare comprendente transistori pnp verticali con collettore sul substrato
JPS6386192U (enrdf_load_stackoverflow) * 1986-11-19 1988-06-06
DE3883459T2 (de) * 1987-07-29 1994-03-17 Fairchild Semiconductor Verfahren zum Herstellen komplementärer kontaktloser vertikaler Bipolartransistoren.
JPH02296994A (ja) * 1989-05-09 1990-12-07 Fujita Corp 泥漿シールド機のカツターヘツド
JPH03128793U (enrdf_load_stackoverflow) * 1990-04-10 1991-12-25
JPH0450493U (enrdf_load_stackoverflow) * 1990-08-31 1992-04-28
FR3106931B1 (fr) 2020-01-30 2022-02-18 St Microelectronics Crolles 2 Sas Procédé de fabrication d’un dispositif comprenant un transistor bipolaire PNP et un transistor bipolaire NPN pour applications radiofréquences

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4991191A (enrdf_load_stackoverflow) * 1972-12-29 1974-08-30

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4991191A (enrdf_load_stackoverflow) * 1972-12-29 1974-08-30

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56126960A (en) * 1980-03-11 1981-10-05 Nec Corp Manufacture of semiconductor device

Also Published As

Publication number Publication date
CH607332A5 (enrdf_load_stackoverflow) 1978-12-15
NL7601307A (nl) 1976-08-10
GB1533156A (en) 1978-11-22
JPS5914897B2 (ja) 1984-04-06
DE2604735A1 (de) 1976-08-19
FR2300417A1 (fr) 1976-09-03
FR2300417B1 (enrdf_load_stackoverflow) 1980-03-21
IT1055132B (it) 1981-12-21
CA1048655A (en) 1979-02-13

Similar Documents

Publication Publication Date Title
JPS5513541B2 (enrdf_load_stackoverflow)
FR2300417B1 (enrdf_load_stackoverflow)
FR2306622B1 (enrdf_load_stackoverflow)
JPS51133726U (enrdf_load_stackoverflow)
JPS52107970U (enrdf_load_stackoverflow)
JPS5514328Y2 (enrdf_load_stackoverflow)
JPS5518107B2 (enrdf_load_stackoverflow)
JPS5250999U (enrdf_load_stackoverflow)
JPS5188508A (enrdf_load_stackoverflow)
JPS5254846U (enrdf_load_stackoverflow)
CH599824A5 (enrdf_load_stackoverflow)
CH599027A5 (enrdf_load_stackoverflow)
CH591762A5 (enrdf_load_stackoverflow)
CH592775B5 (enrdf_load_stackoverflow)
AU480071A (enrdf_load_stackoverflow)
DD116759A1 (enrdf_load_stackoverflow)
CH602562A5 (enrdf_load_stackoverflow)
CH602134A5 (enrdf_load_stackoverflow)
CH601971A5 (enrdf_load_stackoverflow)
CH601725A5 (enrdf_load_stackoverflow)
CH601375A5 (enrdf_load_stackoverflow)
CH601015A5 (enrdf_load_stackoverflow)
CH600530A5 (enrdf_load_stackoverflow)
CH593594A5 (enrdf_load_stackoverflow)
CH599801A5 (enrdf_load_stackoverflow)