JPS4991191A - - Google Patents

Info

Publication number
JPS4991191A
JPS4991191A JP48000550A JP55073A JPS4991191A JP S4991191 A JPS4991191 A JP S4991191A JP 48000550 A JP48000550 A JP 48000550A JP 55073 A JP55073 A JP 55073A JP S4991191 A JPS4991191 A JP S4991191A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP48000550A
Other languages
Japanese (ja)
Other versions
JPS5147583B2 (enrdf_load_stackoverflow
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP48000550A priority Critical patent/JPS5147583B2/ja
Priority to AU63789/73A priority patent/AU483398B2/en
Priority to GB5909373A priority patent/GB1460037A/en
Priority to DK701973A priority patent/DK140036C/da
Priority to AT1083973A priority patent/AT376844B/de
Priority to CH1814173A priority patent/CH577750A5/de
Priority to DE2364752A priority patent/DE2364752A1/de
Priority to IT32324/73A priority patent/IT1002384B/it
Priority to SE7317518A priority patent/SE398940B/xx
Priority to NO4980/73A priority patent/NO140844C/no
Priority to NL7317815A priority patent/NL7317815A/xx
Priority to CA189,167A priority patent/CA993568A/en
Priority to BR10275/73A priority patent/BR7310275D0/pt
Priority to BE2053325A priority patent/BE809216A/xx
Priority to FR7347090A priority patent/FR2212645B1/fr
Priority to ES421881A priority patent/ES421881A1/es
Publication of JPS4991191A publication Critical patent/JPS4991191A/ja
Priority to US05/561,914 priority patent/US4007474A/en
Priority to US05/651,161 priority patent/US4027324A/en
Priority to US05/654,758 priority patent/US4038680A/en
Publication of JPS5147583B2 publication Critical patent/JPS5147583B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/148—Cathode regions of thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617—Combinations of vertical BJTs and only diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/67—Complementary BJTs
    • H10D84/673—Vertical complementary BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP48000550A 1972-12-29 1972-12-29 Expired JPS5147583B2 (enrdf_load_stackoverflow)

Priority Applications (19)

Application Number Priority Date Filing Date Title
JP48000550A JPS5147583B2 (enrdf_load_stackoverflow) 1972-12-29 1972-12-29
AU63789/73A AU483398B2 (en) 1972-12-29 1973-12-19 Semiconductor device
GB5909373A GB1460037A (en) 1972-12-29 1973-12-20 Semiconductor devices
DK701973A DK140036C (da) 1972-12-29 1973-12-21 Halvlederelement
AT1083973A AT376844B (de) 1972-12-29 1973-12-27 Halbleiterbauteil
CH1814173A CH577750A5 (enrdf_load_stackoverflow) 1972-12-29 1973-12-27
DE2364752A DE2364752A1 (de) 1972-12-29 1973-12-27 Halbleitervorrichtung
IT32324/73A IT1002384B (it) 1972-12-29 1973-12-27 Dispositivo semiconduttore
ES421881A ES421881A1 (es) 1972-12-29 1973-12-28 Dispositivo semiconductor de varias uniones.
SE7317518A SE398940B (sv) 1972-12-29 1973-12-28 Halvledardon
NL7317815A NL7317815A (enrdf_load_stackoverflow) 1972-12-29 1973-12-28
CA189,167A CA993568A (en) 1972-12-29 1973-12-28 Semiconductor device
BR10275/73A BR7310275D0 (pt) 1972-12-29 1973-12-28 Aperfeicoamento em dispositivo semicondutor de juncoes multiplas
BE2053325A BE809216A (fr) 1972-12-29 1973-12-28 Dispositif semi-conducteur
FR7347090A FR2212645B1 (enrdf_load_stackoverflow) 1972-12-29 1973-12-28
NO4980/73A NO140844C (no) 1972-12-29 1973-12-28 Halvlederanordning.
US05/561,914 US4007474A (en) 1972-12-29 1975-03-25 Transistor having an emitter with a low impurity concentration portion and a high impurity concentration portion
US05/651,161 US4027324A (en) 1972-12-29 1976-01-21 Bidirectional transistor
US05/654,758 US4038680A (en) 1972-12-29 1976-02-03 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP48000550A JPS5147583B2 (enrdf_load_stackoverflow) 1972-12-29 1972-12-29

Publications (2)

Publication Number Publication Date
JPS4991191A true JPS4991191A (enrdf_load_stackoverflow) 1974-08-30
JPS5147583B2 JPS5147583B2 (enrdf_load_stackoverflow) 1976-12-15

Family

ID=11476818

Family Applications (1)

Application Number Title Priority Date Filing Date
JP48000550A Expired JPS5147583B2 (enrdf_load_stackoverflow) 1972-12-29 1972-12-29

Country Status (15)

Country Link
JP (1) JPS5147583B2 (enrdf_load_stackoverflow)
AT (1) AT376844B (enrdf_load_stackoverflow)
BE (1) BE809216A (enrdf_load_stackoverflow)
BR (1) BR7310275D0 (enrdf_load_stackoverflow)
CA (1) CA993568A (enrdf_load_stackoverflow)
CH (1) CH577750A5 (enrdf_load_stackoverflow)
DE (1) DE2364752A1 (enrdf_load_stackoverflow)
DK (1) DK140036C (enrdf_load_stackoverflow)
ES (1) ES421881A1 (enrdf_load_stackoverflow)
FR (1) FR2212645B1 (enrdf_load_stackoverflow)
GB (1) GB1460037A (enrdf_load_stackoverflow)
IT (1) IT1002384B (enrdf_load_stackoverflow)
NL (1) NL7317815A (enrdf_load_stackoverflow)
NO (1) NO140844C (enrdf_load_stackoverflow)
SE (1) SE398940B (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5191680A (enrdf_load_stackoverflow) * 1975-02-08 1976-08-11
JPS52100978A (en) * 1976-02-20 1977-08-24 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT377645B (de) * 1972-12-29 1985-04-10 Sony Corp Halbleiterbauteil
JPS5754969B2 (enrdf_load_stackoverflow) * 1974-04-04 1982-11-20
JPS5753672B2 (enrdf_load_stackoverflow) * 1974-04-10 1982-11-13
JPS57658B2 (enrdf_load_stackoverflow) * 1974-04-16 1982-01-07
JPS5714064B2 (enrdf_load_stackoverflow) * 1974-04-25 1982-03-20
JPS5718710B2 (enrdf_load_stackoverflow) * 1974-05-10 1982-04-17
JPS5648983B2 (enrdf_load_stackoverflow) * 1974-05-10 1981-11-19
JPS5426789Y2 (enrdf_load_stackoverflow) * 1974-07-23 1979-09-03
US4178190A (en) 1975-06-30 1979-12-11 Rca Corporation Method of making a bipolar transistor with high-low emitter impurity concentration
IT1061510B (it) * 1975-06-30 1983-04-30 Rca Corp Transistore bipolare presentante un emettitore con una elevata bassa concentrazione di impurezze e metodo di fabbricazione dello stesso
JPS5565460A (en) * 1978-11-09 1980-05-16 Ibm Method of manufacturing semiconductor device improved in current gain
JPS5946103B2 (ja) * 1980-03-10 1984-11-10 日本電信電話株式会社 トランジスタ

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL103476C (enrdf_load_stackoverflow) * 1955-04-21
US3343048A (en) * 1964-02-20 1967-09-19 Westinghouse Electric Corp Four layer semiconductor switching devices having a shorted emitter and method of making the same
DE1221363B (de) * 1964-04-25 1966-07-21 Telefunken Patent Verfahren zum Verringern des Bahnwiderstands von Halbleiterbauelementen
DE1297237B (de) * 1964-09-18 1969-06-12 Itt Ind Gmbh Deutsche Flaechentransistor und Verfahren zu seiner Herstellung
US3500141A (en) * 1964-10-13 1970-03-10 Ibm Transistor structure
GB1160429A (en) * 1965-10-14 1969-08-06 Philco Ford Corp Improvements in and relating to Semiconductive Devices.
US3469117A (en) * 1966-01-08 1969-09-23 Nippon Telegraph & Telephone Electric circuit employing semiconductor devices
US3432920A (en) * 1966-12-01 1969-03-18 Rca Corp Semiconductor devices and methods of making them
US3512056A (en) * 1967-04-25 1970-05-12 Westinghouse Electric Corp Double epitaxial layer high power,high speed transistor
FR1574577A (enrdf_load_stackoverflow) * 1967-08-03 1969-07-11
US3504242A (en) * 1967-08-11 1970-03-31 Westinghouse Electric Corp Switching power transistor with thyristor overload capacity
US3538401A (en) * 1968-04-11 1970-11-03 Westinghouse Electric Corp Drift field thyristor
US3544863A (en) * 1968-10-29 1970-12-01 Motorola Inc Monolithic integrated circuit substructure with epitaxial decoupling capacitance
US3591430A (en) * 1968-11-14 1971-07-06 Philco Ford Corp Method for fabricating bipolar planar transistor having reduced minority carrier fringing
JPS4840667B1 (enrdf_load_stackoverflow) * 1969-03-28 1973-12-01
US3717515A (en) * 1969-11-10 1973-02-20 Ibm Process for fabricating a pedestal transistor
DE2060854A1 (de) * 1970-12-10 1972-08-17 Siemens Ag Halbleiterbauelement mit drei Zonen abwechselnden Leitfaehigkeitstyps und Anordnung zu seiner Ansteuerung
DE2211384A1 (de) * 1971-03-20 1972-11-30 Philips Nv Schaltungsanordnung mit mindestens einem strahlungsgespeisten Schaltungselement und Halbleiteranordnung zur Anwendung in einer derartigen Schaltungsanordnung
JPS493583A (enrdf_load_stackoverflow) * 1972-04-20 1974-01-12

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5191680A (enrdf_load_stackoverflow) * 1975-02-08 1976-08-11
JPS52100978A (en) * 1976-02-20 1977-08-24 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device

Also Published As

Publication number Publication date
FR2212645A1 (enrdf_load_stackoverflow) 1974-07-26
AU6378973A (en) 1975-06-19
GB1460037A (en) 1976-12-31
BE809216A (fr) 1974-04-16
NL7317815A (enrdf_load_stackoverflow) 1974-07-02
FR2212645B1 (enrdf_load_stackoverflow) 1977-08-05
JPS5147583B2 (enrdf_load_stackoverflow) 1976-12-15
DE2364752A1 (de) 1974-08-01
SE398940B (sv) 1978-01-23
NO140844B (no) 1979-08-13
IT1002384B (it) 1976-05-20
AT376844B (de) 1985-01-10
CH577750A5 (enrdf_load_stackoverflow) 1976-07-15
NO140844C (no) 1979-11-21
DK140036C (da) 1979-12-24
BR7310275D0 (pt) 1974-09-24
ES421881A1 (es) 1976-08-01
DK140036B (da) 1979-06-05
CA993568A (en) 1976-07-20
ATA1083973A (de) 1984-05-15

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