DE2364752A1 - Halbleitervorrichtung - Google Patents
HalbleitervorrichtungInfo
- Publication number
- DE2364752A1 DE2364752A1 DE2364752A DE2364752A DE2364752A1 DE 2364752 A1 DE2364752 A1 DE 2364752A1 DE 2364752 A DE2364752 A DE 2364752A DE 2364752 A DE2364752 A DE 2364752A DE 2364752 A1 DE2364752 A1 DE 2364752A1
- Authority
- DE
- Germany
- Prior art keywords
- emitter
- minority carrier
- area
- width
- emitter region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 239000004065 semiconductor Substances 0.000 title claims description 31
- 238000009792 diffusion process Methods 0.000 claims description 41
- 230000007704 transition Effects 0.000 claims description 14
- 239000000969 carrier Substances 0.000 claims description 9
- 230000006798 recombination Effects 0.000 claims description 4
- 238000005215 recombination Methods 0.000 claims description 4
- 238000002347 injection Methods 0.000 claims 1
- 239000007924 injection Substances 0.000 claims 1
- 239000012535 impurity Substances 0.000 description 19
- 239000000758 substrate Substances 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- VMXJCRHCUWKQCB-UHFFFAOYSA-N NPNP Chemical compound NPNP VMXJCRHCUWKQCB-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000010181 polygamy Effects 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/60—Impurity distributions or concentrations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/133—Emitter regions of BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
- H10D62/148—Cathode regions of thyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
- H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
- H10D84/617—Combinations of vertical BJTs and only diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/67—Complementary BJTs
- H10D84/673—Vertical complementary BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP48000550A JPS5147583B2 (enrdf_load_stackoverflow) | 1972-12-29 | 1972-12-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2364752A1 true DE2364752A1 (de) | 1974-08-01 |
Family
ID=11476818
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2364752A Ceased DE2364752A1 (de) | 1972-12-29 | 1973-12-27 | Halbleitervorrichtung |
Country Status (15)
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3108491A1 (de) * | 1980-03-10 | 1982-04-01 | Nippon Telegraph and Telephone Public Corp., Tokyo | Bipolarer transistor |
| AT374052B (de) * | 1974-04-04 | 1984-03-12 | Sony Corp | Differenzverstaerker mit steuerbarer verstaerkung |
| AT374053B (de) * | 1974-04-10 | 1984-03-12 | Sony Corp | Differenzverstaerker mit steuerbarer verstaerkung |
| AT374976B (de) * | 1974-05-10 | 1984-06-25 | Sony Corp | Fuehlerschaltung zum feststellen des widerstands- wertes eines fuehlerelementes |
| AT374974B (de) * | 1974-04-25 | 1984-06-25 | Sony Corp | Rauscheliminierungs-stromkreis |
| AT374973B (de) * | 1974-04-16 | 1984-06-25 | Sony Corp | Wechselstrom-regelkreis |
| AT374975B (de) * | 1974-05-10 | 1984-06-25 | Sony Corp | Oszillator |
| AT377645B (de) * | 1972-12-29 | 1985-04-10 | Sony Corp | Halbleiterbauteil |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5914897B2 (ja) * | 1975-02-08 | 1984-04-06 | ソニー株式会社 | 半導体装置 |
| JPS5426789Y2 (enrdf_load_stackoverflow) * | 1974-07-23 | 1979-09-03 | ||
| US4178190A (en) | 1975-06-30 | 1979-12-11 | Rca Corporation | Method of making a bipolar transistor with high-low emitter impurity concentration |
| IT1061510B (it) * | 1975-06-30 | 1983-04-30 | Rca Corp | Transistore bipolare presentante un emettitore con una elevata bassa concentrazione di impurezze e metodo di fabbricazione dello stesso |
| JPS52100978A (en) * | 1976-02-20 | 1977-08-24 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device |
| JPS5565460A (en) * | 1978-11-09 | 1980-05-16 | Ibm | Method of manufacturing semiconductor device improved in current gain |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL103476C (enrdf_load_stackoverflow) * | 1955-04-21 | |||
| US3343048A (en) * | 1964-02-20 | 1967-09-19 | Westinghouse Electric Corp | Four layer semiconductor switching devices having a shorted emitter and method of making the same |
| DE1221363B (de) * | 1964-04-25 | 1966-07-21 | Telefunken Patent | Verfahren zum Verringern des Bahnwiderstands von Halbleiterbauelementen |
| DE1297237B (de) * | 1964-09-18 | 1969-06-12 | Itt Ind Gmbh Deutsche | Flaechentransistor und Verfahren zu seiner Herstellung |
| US3500141A (en) * | 1964-10-13 | 1970-03-10 | Ibm | Transistor structure |
| GB1160429A (en) * | 1965-10-14 | 1969-08-06 | Philco Ford Corp | Improvements in and relating to Semiconductive Devices. |
| US3469117A (en) * | 1966-01-08 | 1969-09-23 | Nippon Telegraph & Telephone | Electric circuit employing semiconductor devices |
| US3432920A (en) * | 1966-12-01 | 1969-03-18 | Rca Corp | Semiconductor devices and methods of making them |
| US3512056A (en) * | 1967-04-25 | 1970-05-12 | Westinghouse Electric Corp | Double epitaxial layer high power,high speed transistor |
| FR1574577A (enrdf_load_stackoverflow) * | 1967-08-03 | 1969-07-11 | ||
| US3504242A (en) * | 1967-08-11 | 1970-03-31 | Westinghouse Electric Corp | Switching power transistor with thyristor overload capacity |
| US3538401A (en) * | 1968-04-11 | 1970-11-03 | Westinghouse Electric Corp | Drift field thyristor |
| US3544863A (en) * | 1968-10-29 | 1970-12-01 | Motorola Inc | Monolithic integrated circuit substructure with epitaxial decoupling capacitance |
| US3591430A (en) * | 1968-11-14 | 1971-07-06 | Philco Ford Corp | Method for fabricating bipolar planar transistor having reduced minority carrier fringing |
| JPS4840667B1 (enrdf_load_stackoverflow) * | 1969-03-28 | 1973-12-01 | ||
| US3717515A (en) * | 1969-11-10 | 1973-02-20 | Ibm | Process for fabricating a pedestal transistor |
| DE2060854A1 (de) * | 1970-12-10 | 1972-08-17 | Siemens Ag | Halbleiterbauelement mit drei Zonen abwechselnden Leitfaehigkeitstyps und Anordnung zu seiner Ansteuerung |
| DE2211384A1 (de) * | 1971-03-20 | 1972-11-30 | Philips Nv | Schaltungsanordnung mit mindestens einem strahlungsgespeisten Schaltungselement und Halbleiteranordnung zur Anwendung in einer derartigen Schaltungsanordnung |
| JPS493583A (enrdf_load_stackoverflow) * | 1972-04-20 | 1974-01-12 |
-
1972
- 1972-12-29 JP JP48000550A patent/JPS5147583B2/ja not_active Expired
-
1973
- 1973-12-20 GB GB5909373A patent/GB1460037A/en not_active Expired
- 1973-12-21 DK DK701973A patent/DK140036C/da not_active IP Right Cessation
- 1973-12-27 AT AT1083973A patent/AT376844B/de not_active IP Right Cessation
- 1973-12-27 CH CH1814173A patent/CH577750A5/de not_active IP Right Cessation
- 1973-12-27 DE DE2364752A patent/DE2364752A1/de not_active Ceased
- 1973-12-27 IT IT32324/73A patent/IT1002384B/it active
- 1973-12-28 NO NO4980/73A patent/NO140844C/no unknown
- 1973-12-28 SE SE7317518A patent/SE398940B/xx unknown
- 1973-12-28 FR FR7347090A patent/FR2212645B1/fr not_active Expired
- 1973-12-28 BE BE2053325A patent/BE809216A/xx not_active IP Right Cessation
- 1973-12-28 ES ES421881A patent/ES421881A1/es not_active Expired
- 1973-12-28 BR BR10275/73A patent/BR7310275D0/pt unknown
- 1973-12-28 CA CA189,167A patent/CA993568A/en not_active Expired
- 1973-12-28 NL NL7317815A patent/NL7317815A/xx unknown
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AT377645B (de) * | 1972-12-29 | 1985-04-10 | Sony Corp | Halbleiterbauteil |
| AT374052B (de) * | 1974-04-04 | 1984-03-12 | Sony Corp | Differenzverstaerker mit steuerbarer verstaerkung |
| AT374053B (de) * | 1974-04-10 | 1984-03-12 | Sony Corp | Differenzverstaerker mit steuerbarer verstaerkung |
| AT374973B (de) * | 1974-04-16 | 1984-06-25 | Sony Corp | Wechselstrom-regelkreis |
| AT374974B (de) * | 1974-04-25 | 1984-06-25 | Sony Corp | Rauscheliminierungs-stromkreis |
| AT374976B (de) * | 1974-05-10 | 1984-06-25 | Sony Corp | Fuehlerschaltung zum feststellen des widerstands- wertes eines fuehlerelementes |
| AT374975B (de) * | 1974-05-10 | 1984-06-25 | Sony Corp | Oszillator |
| DE3108491A1 (de) * | 1980-03-10 | 1982-04-01 | Nippon Telegraph and Telephone Public Corp., Tokyo | Bipolarer transistor |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2212645A1 (enrdf_load_stackoverflow) | 1974-07-26 |
| AU6378973A (en) | 1975-06-19 |
| GB1460037A (en) | 1976-12-31 |
| BE809216A (fr) | 1974-04-16 |
| NL7317815A (enrdf_load_stackoverflow) | 1974-07-02 |
| FR2212645B1 (enrdf_load_stackoverflow) | 1977-08-05 |
| JPS5147583B2 (enrdf_load_stackoverflow) | 1976-12-15 |
| SE398940B (sv) | 1978-01-23 |
| NO140844B (no) | 1979-08-13 |
| IT1002384B (it) | 1976-05-20 |
| AT376844B (de) | 1985-01-10 |
| CH577750A5 (enrdf_load_stackoverflow) | 1976-07-15 |
| NO140844C (no) | 1979-11-21 |
| DK140036C (da) | 1979-12-24 |
| BR7310275D0 (pt) | 1974-09-24 |
| JPS4991191A (enrdf_load_stackoverflow) | 1974-08-30 |
| ES421881A1 (es) | 1976-08-01 |
| DK140036B (da) | 1979-06-05 |
| CA993568A (en) | 1976-07-20 |
| ATA1083973A (de) | 1984-05-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8131 | Rejection |