DE2334427A1 - Baugruppe fuer ein lsi-plaettchen und herstellungsverfahren - Google Patents

Baugruppe fuer ein lsi-plaettchen und herstellungsverfahren

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Publication number
DE2334427A1
DE2334427A1 DE19732334427 DE2334427A DE2334427A1 DE 2334427 A1 DE2334427 A1 DE 2334427A1 DE 19732334427 DE19732334427 DE 19732334427 DE 2334427 A DE2334427 A DE 2334427A DE 2334427 A1 DE2334427 A1 DE 2334427A1
Authority
DE
Germany
Prior art keywords
base plate
conductor pattern
conductors
assembly according
planar surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE19732334427
Other languages
German (de)
English (en)
Inventor
Robert James Beall
John Joseph Zasio
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu IT Holdings Inc
Original Assignee
Amdahl Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Amdahl Corp filed Critical Amdahl Corp
Publication of DE2334427A1 publication Critical patent/DE2334427A1/de
Ceased legal-status Critical Current

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    • H01L23/053Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
    • H01L23/057Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads being parallel to the base
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    • H01L2924/0132Binary Alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/0132Binary Alloys
    • H01L2924/01322Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • HELECTRICITY
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    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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    • H01L2924/014Solder alloys
    • HELECTRICITY
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1203Rectifying Diode
    • H01L2924/12033Gunn diode
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/1515Shape
    • H01L2924/15153Shape the die mounting substrate comprising a recess for hosting the device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/15165Monolayer substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/1517Multilayer substrate
    • HELECTRICITY
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    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1532Connection portion the connection portion being formed on the die mounting surface of the substrate
    • HELECTRICITY
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/1615Shape
    • H01L2924/16195Flat cap [not enclosing an internal cavity]
    • HELECTRICITY
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901Structure
    • H01L2924/1904Component type
    • H01L2924/19043Component type being a resistor
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49117Conductor or circuit manufacturing
    • Y10T29/49124On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49126Assembling bases
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49117Conductor or circuit manufacturing
    • Y10T29/49124On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155Manufacturing circuit on or in base
    • Y10T29/49163Manufacturing circuit on or in base with sintering of base

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
DE19732334427 1972-07-10 1973-07-06 Baugruppe fuer ein lsi-plaettchen und herstellungsverfahren Ceased DE2334427A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US27044872A 1972-07-10 1972-07-10
US348239A US3872583A (en) 1972-07-10 1973-04-05 LSI chip package and method

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Publication Number Publication Date
DE2334427A1 true DE2334427A1 (de) 1974-01-31

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US (1) US3872583A (en, 2012)
AU (1) AU468119B2 (en, 2012)
BE (1) BE801910A (en, 2012)
CA (1) CA1001324A (en, 2012)
CH (2) CH590558A5 (en, 2012)
DE (1) DE2334427A1 (en, 2012)
FR (1) FR2192376B1 (en, 2012)
GB (2) GB1443362A (en, 2012)
NL (1) NL7309189A (en, 2012)

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DE3026183A1 (de) * 1979-07-10 1981-02-19 Nippon Electric Co Gehaeuse fuer integrierte logikschaltkreise
DE3146796A1 (de) * 1980-11-28 1982-06-16 Western Electric Co., Inc., 10038 New York, N.Y. "verkapselung fuer ein halbleiterchip mit integrierter schaltung"
DE3511722A1 (de) * 1984-04-02 1985-10-03 Burroughs Corp. (n.d. Ges. des Staates Delaware), Detroit, Mich. Elektromechanische baugruppe fuer integrierte schaltkreismatrizen
US4680075A (en) * 1986-01-21 1987-07-14 Unisys Corporation Thermoplastic plug method of fabricating an integrated circuit package having bonding pads in a stepped cavity

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GB1514595A (en) * 1975-03-03 1978-06-14 Hughes Aircraft Co Package for hermetically sealing electronic circuits
JPS5210678A (en) * 1975-07-15 1977-01-27 Kyocera Corp Ic package
JPS5756527Y2 (en, 2012) * 1977-02-25 1982-12-04
DE2860865D1 (en) * 1977-10-12 1981-10-29 Secr Defence Brit Improvements in or relating to microwave integrated circuit packages
DE2857170A1 (de) * 1977-11-18 1980-12-04 Fujitsu Ltd Semiconductor device
US4285002A (en) * 1978-01-19 1981-08-18 International Computers Limited Integrated circuit package
US4246697A (en) * 1978-04-06 1981-01-27 Motorola, Inc. Method of manufacturing RF power semiconductor package
JPS5615059U (en, 2012) * 1979-07-11 1981-02-09
DE3030763A1 (de) * 1979-08-17 1981-03-26 Amdahl Corp., Sunnyvale, Calif. Packung fuer eine integrierte schaltung in plaettchenform
US4338621A (en) * 1980-02-04 1982-07-06 Burroughs Corporation Hermetic integrated circuit package for high density high power applications
FR2476960A1 (fr) * 1980-02-26 1981-08-28 Thomson Csf Procede d'encapsulation hermetique de composants electroniques a tres haute frequence, comportant la pose de traversees metalliques, dispositif realise par un tel procede
EP0054069A1 (en) * 1980-06-19 1982-06-23 Digital Equipment Corporation Heat pin integrated circuit packaging
US4387388A (en) * 1980-07-14 1983-06-07 Ncr Corporation Package and connector receptacle
AU87287S (en) 1982-01-14 1983-07-01 Fujitsu Ltd Integrated circuit
US4410927A (en) * 1982-01-21 1983-10-18 Olin Corporation Casing for an electrical component having improved strength and heat transfer characteristics
US4866571A (en) * 1982-06-21 1989-09-12 Olin Corporation Semiconductor package
US5014159A (en) * 1982-04-19 1991-05-07 Olin Corporation Semiconductor package
JPS58186951A (ja) * 1982-04-24 1983-11-01 Toshiba Corp 電子部品のパッケ−ジング方法
EP0098173B1 (en) * 1982-06-30 1990-04-11 Fujitsu Limited Semiconductor integrated-circuit apparatus
US4608592A (en) * 1982-07-09 1986-08-26 Nec Corporation Semiconductor device provided with a package for a semiconductor element having a plurality of electrodes to be applied with substantially same voltage
JPS5987893A (ja) * 1982-11-12 1984-05-21 株式会社日立製作所 配線基板とその製造方法およびそれを用いた半導体装置
US4513355A (en) * 1983-06-15 1985-04-23 Motorola, Inc. Metallization and bonding means and method for VLSI packages
US4631572A (en) * 1983-09-27 1986-12-23 Trw Inc. Multiple path signal distribution to large scale integration chips
US4716124A (en) * 1984-06-04 1987-12-29 General Electric Company Tape automated manufacture of power semiconductor devices
US4730232A (en) * 1986-06-25 1988-03-08 Westinghouse Electric Corp. High density microelectronic packaging module for high speed chips
US4758927A (en) * 1987-01-21 1988-07-19 Tektronix, Inc. Method of mounting a substrate structure to a circuit board
US5008734A (en) * 1989-12-20 1991-04-16 National Semiconductor Corporation Stadium-stepped package for an integrated circuit with air dielectric
US5371321A (en) * 1992-07-22 1994-12-06 Vlsi Technology, Inc. Package structure and method for reducing bond wire inductance
US5280413A (en) * 1992-09-17 1994-01-18 Ceridian Corporation Hermetically sealed circuit modules having conductive cap anchors
US5325268A (en) * 1993-01-28 1994-06-28 National Semiconductor Corporation Interconnector for a multi-chip module or package
US5465008A (en) * 1993-10-08 1995-11-07 Stratedge Corporation Ceramic microelectronics package
US6172412B1 (en) * 1993-10-08 2001-01-09 Stratedge Corporation High frequency microelectronics package
US5736783A (en) * 1993-10-08 1998-04-07 Stratedge Corporation. High frequency microelectronics package
US5753972A (en) * 1993-10-08 1998-05-19 Stratedge Corporation Microelectronics package
US5508888A (en) * 1994-05-09 1996-04-16 At&T Global Information Solutions Company Electronic component lead protector
US5808875A (en) * 1996-03-29 1998-09-15 Intel Corporation Integrated circuit solder-rack interconnect module
US6301122B1 (en) * 1996-06-13 2001-10-09 Matsushita Electric Industrial Co., Ltd. Radio frequency module with thermally and electrically coupled metal film on insulating substrate
CN114407513B (zh) * 2022-01-06 2023-08-01 Tcl华星光电技术有限公司 印刷网及其制备方法

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GB863897A (en) * 1958-05-15 1961-03-29 Gen Electric Co Ltd Improvements in or relating to rectifier assemblies
DE1900539A1 (de) * 1968-01-10 1969-07-17 Western Electric Co Leistungsverstaerker
DE1956501A1 (de) * 1968-11-06 1970-06-11 Olivetti & Co Spa Gehaeuse fuer integrierte Halbleiter-Schaltungen
DE1958175A1 (de) * 1969-03-03 1970-09-10 North American Rockwell Elektronische Baugruppe
DE1949731A1 (de) * 1969-10-02 1971-04-15 Bbc Brown Boveri & Cie Halbleiterelement mit kombinierten Loet-Druckkontakten
DE1690292B1 (de) * 1966-07-29 1971-06-09 Texas Instruments Inc Verfahren zum einbauen einer mit vielen zuleitungen versehenen halbleitervorrichtung und eine nach diesem hergestellte einbauvorric htung
DE1764263A1 (de) * 1968-05-06 1971-06-16 Siemens Ag Gut waermeableitendes Flachgehaeuse fuer Halbleitersysteme
US3665592A (en) * 1970-03-18 1972-05-30 Vernitron Corp Ceramic package for an integrated circuit
DE1904118B2 (de) * 1968-01-29 1972-06-22 Hitachi, Ltd , Tokio Elektrodenanschluss fuer ein integriertes halbleiterbauelement

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JPS4810904B1 (en, 2012) * 1969-03-12 1973-04-09
US3566959A (en) * 1969-07-17 1971-03-02 Controlled Power Corp Heat sink
US3601522A (en) * 1970-06-18 1971-08-24 American Lava Corp Composite ceramic package breakaway notch
US3683241A (en) * 1971-03-08 1972-08-08 Communications Transistor Corp Radio frequency transistor package
US3760090A (en) * 1971-08-19 1973-09-18 Globe Union Inc Electronic circuit package and method for making same
GB1327352A (en) * 1971-10-02 1973-08-22 Kyoto Ceramic Semiconductor device

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GB863897A (en) * 1958-05-15 1961-03-29 Gen Electric Co Ltd Improvements in or relating to rectifier assemblies
DE1690292B1 (de) * 1966-07-29 1971-06-09 Texas Instruments Inc Verfahren zum einbauen einer mit vielen zuleitungen versehenen halbleitervorrichtung und eine nach diesem hergestellte einbauvorric htung
DE1900539A1 (de) * 1968-01-10 1969-07-17 Western Electric Co Leistungsverstaerker
DE1904118B2 (de) * 1968-01-29 1972-06-22 Hitachi, Ltd , Tokio Elektrodenanschluss fuer ein integriertes halbleiterbauelement
DE1764263A1 (de) * 1968-05-06 1971-06-16 Siemens Ag Gut waermeableitendes Flachgehaeuse fuer Halbleitersysteme
DE1956501A1 (de) * 1968-11-06 1970-06-11 Olivetti & Co Spa Gehaeuse fuer integrierte Halbleiter-Schaltungen
DE1958175A1 (de) * 1969-03-03 1970-09-10 North American Rockwell Elektronische Baugruppe
DE1949731A1 (de) * 1969-10-02 1971-04-15 Bbc Brown Boveri & Cie Halbleiterelement mit kombinierten Loet-Druckkontakten
US3665592A (en) * 1970-03-18 1972-05-30 Vernitron Corp Ceramic package for an integrated circuit

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3026183A1 (de) * 1979-07-10 1981-02-19 Nippon Electric Co Gehaeuse fuer integrierte logikschaltkreise
DE3146796A1 (de) * 1980-11-28 1982-06-16 Western Electric Co., Inc., 10038 New York, N.Y. "verkapselung fuer ein halbleiterchip mit integrierter schaltung"
DE3511722A1 (de) * 1984-04-02 1985-10-03 Burroughs Corp. (n.d. Ges. des Staates Delaware), Detroit, Mich. Elektromechanische baugruppe fuer integrierte schaltkreismatrizen
US4680075A (en) * 1986-01-21 1987-07-14 Unisys Corporation Thermoplastic plug method of fabricating an integrated circuit package having bonding pads in a stepped cavity

Also Published As

Publication number Publication date
US3872583A (en) 1975-03-25
CA1001324A (en) 1976-12-07
GB1443362A (en) 1976-07-21
GB1443364A (en) 1976-07-21
FR2192376B1 (en, 2012) 1977-10-14
AU5794773A (en) 1975-01-16
BE801910A (fr) 1973-11-05
FR2192376A1 (en, 2012) 1974-02-08
NL7309189A (en, 2012) 1974-01-14
CH590558A5 (en, 2012) 1977-08-15
AU468119B2 (en) 1976-01-08
CH588770A5 (en, 2012) 1977-06-15

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