JPS5987893A - 配線基板とその製造方法およびそれを用いた半導体装置 - Google Patents

配線基板とその製造方法およびそれを用いた半導体装置

Info

Publication number
JPS5987893A
JPS5987893A JP57197519A JP19751982A JPS5987893A JP S5987893 A JPS5987893 A JP S5987893A JP 57197519 A JP57197519 A JP 57197519A JP 19751982 A JP19751982 A JP 19751982A JP S5987893 A JPS5987893 A JP S5987893A
Authority
JP
Japan
Prior art keywords
wiring
wiring board
board
semiconductor device
hot
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57197519A
Other languages
English (en)
Inventor
寛治 大塚
保 宇佐美
浩介 中村
関　正俊
佐原　邦造
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57197519A priority Critical patent/JPS5987893A/ja
Priority to KR1019830005272A priority patent/KR840006747A/ko
Priority to GB08329757A priority patent/GB2132411B/en
Priority to FR8317781A priority patent/FR2536209A1/fr
Priority to DE19833340926 priority patent/DE3340926A1/de
Priority to IT2370783A priority patent/IT1166544B/it
Publication of JPS5987893A publication Critical patent/JPS5987893A/ja
Priority to SG88987A priority patent/SG88987G/en
Priority to MY8700803A priority patent/MY8700803A/xx
Priority to HK688A priority patent/HK688A/xx
Pending legal-status Critical Current

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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 本発明は高熱伝導性および高電気絶縁性を備えた配線基
板とその製造方法およびそれを用いた半導体装置に関す
る。
近年、集積回路（ＩＣ）、大規模集積回路（ＬＳＩ）に
おいては、高密度化がますます進む傾向にある。そのた
め、半導体ベレットを搭載形成する配線基板は熱放散性
の良い材料で作ることが要求される。
ところが、従来、基板材料として使用されているアルミ
ナ基板は熱放散性が不十分であった。このため、高集積
度のベレットから発生される大量の熱を十分に放散させ
ることができないという問題がある。
ところで、基板材料として要求される性質として主なも
のは、（１）電気絶縁性が大きいこと、（２）熱伝導率
が大きいこと、（３）熱膨張係数がシリコンの熱膨張係
数に近いこと、（４）機械的強度が大きいこと等が挙げ
られる。
このような要求を満足させる艮好な基板材料として、最
年、少量のベリリウムを含む炭化ケイ素（５ｉｎ）焼結
体が注目されている。この炭化ケイ素焼結体は前記（４
）の機械的強度がアルミナの２倍以上大きいことの他、
前記（１）〜（３）についても表１に示す如く非常に優
れた特性を備えている。この炭化ケイ素を用い７：電気
絶縁性基板の詳細については、本出願人により出願され
た特開昭５６−６６０８６号および特開昭５７−２５９
１号公報に開示されている。
表１ しかしながら、上述の炭化ケイ素は共有結合性の強い炭
素（０）とケイ素（Ｓｉ　）の化合物であるため、高密
既焼結をするためには高温高圧のホットプレス法を用い
ねばならなかった。このため、従来は精々単なる平板の
如き簡単な構造を得ることしかできなかった。
一万、特に、高密度用の基板は、出力端子数を増すため
、その厚さ方向にスルーホールを形成することが望まれ
る場合がある。レーザ等を用いて基板にスルーホールを
設けることも考えられるが、加工が極めて困難であると
いう問題があった。
本発明９目的は、前記した課題に鑑み、熱伝導性および
電気や縁性等が良好で、高集積度化に好適であり、しか
もその厚さ方向等の内部配線を容易に得ることのできる
配線基板とその製造方法およびそれを用いた半導体装置
を提供すること忙ある。
以下、本発明を図面に示す実施例にしたがっ工詳細に説
明す゛る。
第１図〜第６図は本発明による配線基板の一実施例な製
造する工程を示す斜視図である。
配線基板を製造するために、まず炭化ケイ素（５ｉｎ）
の粉末に焼結助剤としての少量の酸化ベリリウム（Ｂｅ
ｄ）粉末を混合し、粉末プレス（図示せず）により予備
成形して、第１図に示すような平板状の予備成形品１を
作る。この状態では表１に示した諸特性を示すには到っ
ていない。
次に、第２図に示すように、この予備成形品１の表面に
、任意の本数のストライブ状のＺｒＢ２からなるメタラ
イズ配線２（配線層）を一方向に印刷する。メタライズ
配線２の材料は本実施例では炭化ケイ素とのなじみの良
いＺｒＢ２が使用される。
なお、Ｚ、ｒＢ２に代えてＷ、Ｍｏ等も利用できる。
その後、前記メタライズ配線２を形成した予備成形品１
を、第３図に示すように、所要の複数枚積層する。そし
てこの積層したものを、図示しない真空ホットプレス装
置によりホットプレスする。
この時のホットプレス条件はたとえば温度２０５０℃、
圧力２，９ｔｏｎ／Ｃ司である。これにより、第４図に
示すように、内部配線として前記メタライズ配線２を一
方向に埋め込んだホットプレス素材３を作る。この場合
、メタライズ配線２を上面側にして積層される予備成形
品１のうち、最も上側の予備成形品１はメタライズ配線
２を形成しないままのものを用いるのが良い。この、Ｌ
ｌ’）にすれば、第４図に示すような、ホットプレスさ
れたホットプレス素材３は両端面にしかメタライズ配線
２が露出しない構造となる。この構造はその後の取扱い
等に便利である。このホットプレス素材３は表１に示し
た優れた諸特性を有する。
次いで、第５図に示すように、前記ホットプレス素材３
をダイヤモンドホイール等により、前記メタライズ配線
２に対して直角方向に所定の厚さでスライス切断する。
それにより、第６図に示すように、厚さ方向に前記メタ
ライズ配線２が貫通し、表裏両面にのみ該メタライズ配
線２の切断端面が露出した配線基、板４が得られる。
この配線基板４は炭化ケイ素を主成分としていることに
より、熱放散性や電気絶縁性が非常に艮好で、しかもシ
リコンとの熱膨張係数の差が少なく、機械的強度も大き
い。
したがっ又、配線基板４をたとえば半導体パワーモジー
−ルや大規模集積回路装置等の半導体装置用の電気絶縁
基板として使用すれば、前記特性を有効利用できる。ま
た、メタライズ配線２がホットプレスにより内部配線と
して炭化ケイ素と一体構造化されているので、実装基板
として優れている。即ち、表裏両面（切断面）にホトリ
ソグラフィによる微細配線加工を施こす工程を加えれば
、これにペレットおよびリードビンの取付けを行なうこ
とによって、大形ペレットの高密度搭載が可能である。
本実施例はホットプレス技術を用いているので、大形の
プレス型を利用して低コストのプレス成型を行なうこと
ができ、また、一度の成型で多数の配線基板４が得られ
る。しかも、内部配線が基板と一体であり配線基板円の
気泡形成が排除されているので、表裏両面（切断面）の
表面粗さが非常に小さい。これにより、表裏両面または
片面に対してホトリソグラフィにより微細配線加工を施
こすことができる。さらに、内部配線と基板とが一体で
あるので、その境界を通しての気体の漏れはなく、気密
封土用の基板として優れている。
−−−−−一−− また、配線基板４０表裏両面または片面に表面印刷で配
線を形成し、それを焼成して電気絶縁用基板として用い
ること等も可能である。
第７図は先述した本発明による配線基板４上にホトリソ
グラフィによっ℃多層配線層を形成する状態を示す拡大
部分断面図を示している。この場合の配線層部５におい
ては、配線基板４の厚さ方向に貫通形成されたメタライ
ズ配線２の端面に銅（Ｏｕ）層６が接合され、この銅層
６はさらに２層の銅層７，８に順次接合されている。ま
た、５ｉ０２よりなる２層の絶縁層９，１０が配線基板
４上に形成されている。最上層の銅層８には、半田バン
プ１１を介して半導体ペレット１２を取り付けている。
銅層および５ｉｎ２層は、夫々、例えば電子ビーム蒸着
および気相化学反応法（ＯＶＤ法）によつ℃表面全体に
形成する。そして、ホトリソグラフィ技術を用いて、所
望の配線形状およびコンタクトホールを得る。これによ
って配線層部５が得られる。
第７図では、半導体ベレット１２で発生する熱は、半田
バンプ１１から主として銅層を通って配線基板４に伝達
される。銅は非常に熱伝導率が良いので熱は速やかに配
線基板４に伝達される。したがって、ペレット１２で発
生した熱は効率よく配線基板４から放熱される。
また、熱に上ってシリコンの半導体ベレット１２および
配線基板４か膨張しても、半田バンプ部分で剥れ等の不
良が生ずることを防止できる。
これは、表１に示すように、両者の熱膨張係数がほぼ等
しいからである。これによって、従来半田バンプを用い
た実装法の大きな問題であった熱膨張に起因する不良を
除くことができる。
なお、第７図において、・銅や５ｉｎ２に替えて他の金
属や絶縁物を用いることもできる。また、配線部分５は
さらに多層構造とすることができる。
このような配線層部５を有する配縁基板４のメタライズ
配線２０反対端面（第７図の下端面）にリードピンを取
り付ければ、配線基板４を半導体装置用のパンケージ基
板として利用できる。
第８図はその一例を示すものであり、上述の配線基板を
用いた半導体装置の一実施例を示す断面図である。
この実施例における半導体装置では、先述の配線基板４
の上面に、メタライズ配線２の上端面と導電接合された
銅層１３，１４およびＳ　ｉ　０２の絶縁層１５よりな
る単層の配線層部１６が形成されている。前記銅層１４
の上には半田バンプ１７を介して半導体ベレット１８が
２個取り付けられ、いわゆるマルチチップ型の高密度実
装構造となっている。そして、半導体ベレット１８は、
たとえば基板と同一組成の炭化ケイ素、ムライトで作ら
れたキャップ１９をガラス、樹脂等の封止材２０で取り
付けることによって気密封止されている。
−万、配線基板４の下面には、メタライズ配線２の下端
面と導電接合された銅層２１，２２．２３およびＳ　ｉ
、０．で作られた２層の絶縁層２４，２５よりなる多層
構造の配線層部２６が形成されている。前記銅層２１，
２２．２３のうち、表面の銅層２３の下面側には、リー
ドピン２７が半日または銀（Ａｇ）　／銅ろう材の如き
接合材２８により取り付けられている。つまりリードピ
ン２７によって前記半導体ペレット１８は配線層部１６
．メタライズ配線２．配線層部２６を経１外部との電気
的導通な行なうようになっている。
また、配線基板４の側面の外周には冷却バイブ２９が配
設されている。この冷却バイブ２９の中には水またはフ
レオン等を流通させる。これによって、半導体ベレット
１８から配線層部１６．配線基板４を経て伝導され１米
た熱をより効率的に放散させる。
この実施例では、半導体ベレット１８で発生する熱は主
として半田バンブ１７から熱伝導率の良い銅層な通って
配線基板４に伝達される。配線層部１６は単層であるた
め特に熱が伝達され易い。
これに加えて、この例では半田バンブ１７が銅層１３の
上部に位置している。換言すれば、半田バンブ１７はコ
ンタクトホールに埋まり、銅層１３゜１４のみを挾んで
配線基板４と接し又いる。このため、さらに、熱は良く
伝えられる。また、配線基板４に伝わった熱は、その側
面方向へと伝わり、冷却バイブ２９により強制的に放散
される。−万、熱はキャップ１９からも放散される。配
線層部１６を構成するＳｉｎ、層１５および封止材２０
は、配線基板４およびキャップ１９に比べて極めて薄い
。従って、これらの熱伝導率は小さいが、熱はキャップ
１９にも伝わる。キャップ１９も熱伝導率の良い材質で
あるから放熱にを与する。
この実施例によれば、半導体ベレット１８で発生する熱
の放散を最良の効率で行なうことができる。なお、半導
体ベレット１８からの熱放散性が特に厳格に要求されな
いような場合には、配線基板４の上面側の配線層部１６
を多層配線構造としてもよい。
また、既に述べたように、半日バンプ部分での不良の発
生を除くことができる。さらに、配線基板４の機械的強
度が強いので、パッケージの強度を向上できる。さらに
配線基板４と配線２との密着性が良いので封止の気密性
を同上できるＯ第９図は上述の配線基板を用℃１だ半導
体装置の他の実施例を示す断面図である。
この実施例は、半導体ペレット１８力（１個だけ設けら
れたシングルチップ構造とし℃示しである。
キャップ１９ａＫは放熱フィン３０か形成され、配線基
板４の周囲の冷却）くイブは省略されＣ〜する。
また、キャップ１９ａの封止はメタライズ３１゜３２間
に金属層３３を介在させた構造となって（・る。このメ
タライズ３１．３２として＆’！、［イヒ膜との接着性
のよいＴｉなどが用いられる。さらに、リードピン２７
は接合材２８によりメタライズ配線２の下端面に直接接
合されている。
この実施例では、半導体ベレット１８で発生する熱は、
配線基板４と放熱フィン３０と力）ら発散される。配線
基板４への熱の伝達は第８図のｆＩｌとｍ−である。−
万キャップ１９ａおよび放熱フィン３０への熱の伝達は
第８図の例よりも改善されセいる。つまり封止材として
、ガラスや樹脂に替え℃、金属からなる層３１，３２．
３３を用いているので、キャップ１９ａにはより多くの
熱か伝わる。キャップ１９ａおよび放熱フィン３０は、
配線基板４と同−構成の熱伝導率の良い材料からなるか
ら、放熱に太き（を与する。
この実施例においても、第８図の例と同様に、半田バン
ブ部分での不良の除去、）くツケージ強度の向上、パッ
ケージの気密性の向上を計ることかできる。
なお、本発明は前記実施例に限定されるものではな（、
他の梯々な変形が可能である。１ことえば、配線基板４
の炭化ケイ素（８ｉＣ）の代りに、窒化シリコンＳｉ、
Ｎ、、窒化ホウ素ＢＮの如き他の高熱伝導性材料を用い
ることができる。
また、予備成形品１上へのメタライズ配線２の形成パタ
ーンあるいはホットプレス素材３の切断方向等も前記実
施例に限定されるものではない。
さらに、本発明は半導体ベレットのポンディングパッド
と配録基板のメタライズ配線への導電部とをワイヤでボ
ンディングする構造の半導体装置にも適用できる。
以上説明したように、本発明によれば、熱放散性および
電気絶縁性等が良好で、高集積度化が容易に可能となり
、内部配線を容易に得ることができる。
【図面の簡単な説明】
第１図〜第６図は本発明による配線基板の一実施例の製
造工程を順次示す斜視図、 第７図は配線基板上に配線層を形成する状態の一例を示
す拡大部分断面図、 第８図は本発明による配線基板を用いた半導体装置の一
実施例の断面図、 第９図は本発明による配線基板を用いた半導体装置の他
の実施例を示す断面図である。 １・・・予備成形品、２・・・メタライズ配線、３・・
・ホットプレス素材、４・・・配線基板、５・・・配線
層部、１２・・・半導体ペレット、１６・・・配線層部
、１８・・・半導体ペレット、１９，１９ａ・・・キャ
ップ、２６・・・配線層部、２７・・・リードピン、２
９・・・冷却バイ第　　１　　図 第２図 第　　３　　図 第　　４　図 第　　５　図 第１頁の続き ０発　明　者　佐原邦造 小平市上水本町１４５０番地株式会 社日立製作所デバイス開発セン タ内

Claims (1)

  1. 【特許請求の範囲】 １、高熱伝導性の基板材料中にホットプレスで形成され
    た内部配線を有してなる配線基板。 ２、基板材料が炭化ケイ素よりなることを特徴とする特
    許請求の範囲第１項記載の配線基板。 ３、高熱伝導性の基板材料の表面に配線層を形成した後
    、複数板の基板材料を積層してホントブレスし、そのホ
    ットプレス素材を前記配線層に対して所定の角度で板状
    に切断する配線基板の製造方法。 ４、ホットプレス素材を配線層に対して直角方向に切断
    することを特徴とする特許請求の範囲第３項記載の配線
    基板の製造方法。 ５、基板材料が炭化ケイ素であることを特徴とする特許
    請求の範囲第３項または第４項記載の配線基板の製造方
    法。 ６、高熱伝導性の基板材料中にホットプレスで形成され
    た内部配線を有する配線基板を用いてなる半導体装置。 ７、基板材料が炭化ケイ素であることを特徴とする特許
    請求の範囲第６項記載の半導体装置。
JP57197519A 1982-11-12 1982-11-12 配線基板とその製造方法およびそれを用いた半導体装置 Pending JPS5987893A (ja)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP57197519A JPS5987893A (ja) 1982-11-12 1982-11-12 配線基板とその製造方法およびそれを用いた半導体装置
KR1019830005272A KR840006747A (ko) 1982-11-12 1983-11-07 배선 기판과 그 제조방법 및 이를 사용한 반도체 장치
GB08329757A GB2132411B (en) 1982-11-12 1983-11-08 Improvements in substrate structures
FR8317781A FR2536209A1 (fr) 1982-11-12 1983-11-09 Substrat de cablage, procede de fabrication de ce substrat et dispositif a semi-conducteurs utilisant un tel substrat
DE19833340926 DE3340926A1 (de) 1982-11-12 1983-11-11 Verdrahtungssubstrat, verfahren zu seiner herstellung, sowie eine damit versehene halbleitervorrichtung
IT2370783A IT1166544B (it) 1982-11-12 1983-11-14 Substrato di cablaggio, procedimento per la sua fabbricazione, e dispositivo a semiconduttore utilizzante il substrato stesso
SG88987A SG88987G (en) 1982-11-12 1987-10-12 Improvements in substrate structures
MY8700803A MY8700803A (en) 1982-11-12 1987-12-30 Improvements in substrate structures
HK688A HK688A (en) 1982-11-12 1988-01-07 Improvements in substrate structures

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57197519A JPS5987893A (ja) 1982-11-12 1982-11-12 配線基板とその製造方法およびそれを用いた半導体装置

Publications (1)

Publication Number Publication Date
JPS5987893A true JPS5987893A (ja) 1984-05-21

Family

ID=16375811

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57197519A Pending JPS5987893A (ja) 1982-11-12 1982-11-12 配線基板とその製造方法およびそれを用いた半導体装置

Country Status (9)

Country Link
JP (1) JPS5987893A (ja)
KR (1) KR840006747A (ja)
DE (1) DE3340926A1 (ja)
FR (1) FR2536209A1 (ja)
GB (1) GB2132411B (ja)
HK (1) HK688A (ja)
IT (1) IT1166544B (ja)
MY (1) MY8700803A (ja)
SG (1) SG88987G (ja)

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FR2575331B1 (fr) * 1984-12-21 1987-06-05 Labo Electronique Physique Boitier pour composant electronique
US4866507A (en) * 1986-05-19 1989-09-12 International Business Machines Corporation Module for packaging semiconductor integrated circuit chips on a base substrate
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Also Published As

Publication number Publication date
IT1166544B (it) 1987-05-06
HK688A (en) 1988-01-15
SG88987G (en) 1988-06-03
MY8700803A (en) 1987-12-31
IT8323707A0 (it) 1983-11-14
GB8329757D0 (en) 1983-12-14
FR2536209A1 (fr) 1984-05-18
KR840006747A (ko) 1984-12-01
GB2132411A (en) 1984-07-04
GB2132411B (en) 1986-08-20
DE3340926A1 (de) 1984-07-12

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