DE2225374B2 - Verfahren zum herstellen eines mos-feldeffekttransistors - Google Patents

Verfahren zum herstellen eines mos-feldeffekttransistors

Info

Publication number
DE2225374B2
DE2225374B2 DE19722225374 DE2225374A DE2225374B2 DE 2225374 B2 DE2225374 B2 DE 2225374B2 DE 19722225374 DE19722225374 DE 19722225374 DE 2225374 A DE2225374 A DE 2225374A DE 2225374 B2 DE2225374 B2 DE 2225374B2
Authority
DE
Germany
Prior art keywords
layer
polycrystalline silicon
polycrystalline
semiconductor substrate
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19722225374
Other languages
German (de)
English (en)
Other versions
DE2225374A1 (de
Inventor
Kazuo Dipl.-Ing. Chigasaki; Shirai Kazunari DipL-Ing. Yokohama; Maeda (Japan)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP3675471A external-priority patent/JPS53274B1/ja
Priority claimed from JP6113471A external-priority patent/JPS55911B2/ja
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of DE2225374A1 publication Critical patent/DE2225374A1/de
Publication of DE2225374B2 publication Critical patent/DE2225374B2/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H10W20/40—
    • H10D64/0113—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P32/1414—
    • H10P32/171—
    • H10P14/6309—
    • H10P14/6322—
    • H10P14/69215—
    • H10P14/6923—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/049—Equivalence and options
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/053—Field effect transistors fets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/133—Reflow oxides and glasses
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/151—Simultaneous diffusion

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
DE19722225374 1971-05-28 1972-05-25 Verfahren zum herstellen eines mos-feldeffekttransistors Withdrawn DE2225374B2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP3675471A JPS53274B1 (enExample) 1971-05-28 1971-05-28
JP6113471A JPS55911B2 (enExample) 1971-08-12 1971-08-12

Publications (2)

Publication Number Publication Date
DE2225374A1 DE2225374A1 (de) 1973-06-20
DE2225374B2 true DE2225374B2 (de) 1977-06-02

Family

ID=26375846

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19722225374 Withdrawn DE2225374B2 (de) 1971-05-28 1972-05-25 Verfahren zum herstellen eines mos-feldeffekttransistors

Country Status (5)

Country Link
US (1) US3837935A (enExample)
DE (1) DE2225374B2 (enExample)
FR (1) FR2140007B1 (enExample)
GB (1) GB1388772A (enExample)
NL (1) NL161306C (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2937989A1 (de) * 1978-09-11 1980-04-10 Tokyo Shibaura Electric Co Halbleitervorrichtung

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2640465A1 (de) * 1976-09-08 1978-03-09 Siemens Ag Verfahren zur herstellung dotierter zonen in einem halbleitersubstrat
US4045259A (en) * 1976-10-26 1977-08-30 Harris Corporation Process for fabricating diffused complementary field effect transistors
US4277881A (en) * 1978-05-26 1981-07-14 Rockwell International Corporation Process for fabrication of high density VLSI circuits, having self-aligned gates and contacts for FET devices and conducting lines
US4587711A (en) * 1978-05-26 1986-05-13 Rockwell International Corporation Process for high density VLSI circuits, having self-aligned gates and contacts for FET devices and conducting lines
US4157269A (en) * 1978-06-06 1979-06-05 International Business Machines Corporation Utilizing polysilicon diffusion sources and special masking techniques
US4196443A (en) * 1978-08-25 1980-04-01 Rca Corporation Buried contact configuration for CMOS/SOS integrated circuits
EP0009910B1 (en) * 1978-09-20 1985-02-13 Fujitsu Limited Semiconductor memory device and process for fabricating the device
JPS5586151A (en) * 1978-12-23 1980-06-28 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor integrated circuit
FR2461360A1 (fr) * 1979-07-10 1981-01-30 Thomson Csf Procede de fabrication d'un transistor a effet de champ du type dmos a fonctionnement vertical et transistor obtenu par ce procede
NL8005673A (nl) * 1980-10-15 1982-05-03 Philips Nv Veldeffecttransistor en werkwijze ter vervaardiging van een dergelijke veldeffecttransistor.
JPS57204172A (en) * 1981-06-08 1982-12-14 Ibm Field effect transistor
US4453306A (en) * 1983-05-27 1984-06-12 At&T Bell Laboratories Fabrication of FETs
US4587709A (en) * 1983-06-06 1986-05-13 International Business Machines Corporation Method of making short channel IGFET
CA1258320A (en) * 1985-04-01 1989-08-08 Madhukar B. Vora Small contactless ram cell
JPS63128750A (ja) * 1986-11-19 1988-06-01 Toshiba Corp 半導体装置
GB8719842D0 (en) * 1987-08-21 1987-09-30 Atomic Energy Authority Uk Transistor
JPH0817173B2 (ja) * 1993-11-10 1996-02-21 キヤノン販売株式会社 成膜方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3443175A (en) * 1967-03-22 1969-05-06 Rca Corp Pn-junction semiconductor with polycrystalline layer on one region
US3519901A (en) * 1968-01-29 1970-07-07 Texas Instruments Inc Bi-layer insulation structure including polycrystalline semiconductor material for integrated circuit isolation
US3664896A (en) * 1969-07-28 1972-05-23 David M Duncan Deposited silicon diffusion sources
US3646665A (en) * 1970-05-22 1972-03-07 Gen Electric Complementary mis-fet devices and method of fabrication
US3699646A (en) * 1970-12-28 1972-10-24 Intel Corp Integrated circuit structure and method for making integrated circuit structure

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2937989A1 (de) * 1978-09-11 1980-04-10 Tokyo Shibaura Electric Co Halbleitervorrichtung

Also Published As

Publication number Publication date
US3837935A (en) 1974-09-24
GB1388772A (en) 1975-03-26
FR2140007B1 (enExample) 1977-12-23
DE2225374A1 (de) 1973-06-20
FR2140007A1 (enExample) 1973-01-12
NL161306C (nl) 1980-01-15
NL161306B (nl) 1979-08-15
NL7207071A (enExample) 1972-11-30

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Legal Events

Date Code Title Description
8239 Disposal/non-payment of the annual fee