NL161306C - Werkwijze voor de vervaardiging van veldeffecttransis- toren met geisoleerde stuurelektrode. - Google Patents

Werkwijze voor de vervaardiging van veldeffecttransis- toren met geisoleerde stuurelektrode.

Info

Publication number
NL161306C
NL161306C NL7207071.A NL7207071A NL161306C NL 161306 C NL161306 C NL 161306C NL 7207071 A NL7207071 A NL 7207071A NL 161306 C NL161306 C NL 161306C
Authority
NL
Netherlands
Prior art keywords
control electrodes
manufacturing field
insulated control
transformers
effect
Prior art date
Application number
NL7207071.A
Other languages
English (en)
Dutch (nl)
Other versions
NL161306B (nl
NL7207071A (enExample
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP3675471A external-priority patent/JPS53274B1/ja
Priority claimed from JP6113471A external-priority patent/JPS55911B2/ja
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of NL7207071A publication Critical patent/NL7207071A/xx
Publication of NL161306B publication Critical patent/NL161306B/xx
Application granted granted Critical
Publication of NL161306C publication Critical patent/NL161306C/xx

Links

Classifications

    • H10W20/40—
    • H10D64/0113—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P32/1414—
    • H10P32/171—
    • H10P14/6309—
    • H10P14/6322—
    • H10P14/69215—
    • H10P14/6923—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/049—Equivalence and options
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/053—Field effect transistors fets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/133—Reflow oxides and glasses
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/151—Simultaneous diffusion
NL7207071.A 1971-05-28 1972-05-25 Werkwijze voor de vervaardiging van veldeffecttransis- toren met geisoleerde stuurelektrode. NL161306C (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP3675471A JPS53274B1 (enExample) 1971-05-28 1971-05-28
JP6113471A JPS55911B2 (enExample) 1971-08-12 1971-08-12

Publications (3)

Publication Number Publication Date
NL7207071A NL7207071A (enExample) 1972-11-30
NL161306B NL161306B (nl) 1979-08-15
NL161306C true NL161306C (nl) 1980-01-15

Family

ID=26375846

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7207071.A NL161306C (nl) 1971-05-28 1972-05-25 Werkwijze voor de vervaardiging van veldeffecttransis- toren met geisoleerde stuurelektrode.

Country Status (5)

Country Link
US (1) US3837935A (enExample)
DE (1) DE2225374B2 (enExample)
FR (1) FR2140007B1 (enExample)
GB (1) GB1388772A (enExample)
NL (1) NL161306C (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2640465A1 (de) * 1976-09-08 1978-03-09 Siemens Ag Verfahren zur herstellung dotierter zonen in einem halbleitersubstrat
US4045259A (en) * 1976-10-26 1977-08-30 Harris Corporation Process for fabricating diffused complementary field effect transistors
US4277881A (en) * 1978-05-26 1981-07-14 Rockwell International Corporation Process for fabrication of high density VLSI circuits, having self-aligned gates and contacts for FET devices and conducting lines
US4587711A (en) * 1978-05-26 1986-05-13 Rockwell International Corporation Process for high density VLSI circuits, having self-aligned gates and contacts for FET devices and conducting lines
US4157269A (en) * 1978-06-06 1979-06-05 International Business Machines Corporation Utilizing polysilicon diffusion sources and special masking techniques
US4196443A (en) * 1978-08-25 1980-04-01 Rca Corporation Buried contact configuration for CMOS/SOS integrated circuits
DE2936724A1 (de) * 1978-09-11 1980-03-20 Tokyo Shibaura Electric Co Halbleitervorrichtung und verfahren zu ihrer herstellung
EP0009910B1 (en) * 1978-09-20 1985-02-13 Fujitsu Limited Semiconductor memory device and process for fabricating the device
JPS5586151A (en) * 1978-12-23 1980-06-28 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor integrated circuit
FR2461360A1 (fr) * 1979-07-10 1981-01-30 Thomson Csf Procede de fabrication d'un transistor a effet de champ du type dmos a fonctionnement vertical et transistor obtenu par ce procede
NL8005673A (nl) * 1980-10-15 1982-05-03 Philips Nv Veldeffecttransistor en werkwijze ter vervaardiging van een dergelijke veldeffecttransistor.
JPS57204172A (en) * 1981-06-08 1982-12-14 Ibm Field effect transistor
US4453306A (en) * 1983-05-27 1984-06-12 At&T Bell Laboratories Fabrication of FETs
US4587709A (en) * 1983-06-06 1986-05-13 International Business Machines Corporation Method of making short channel IGFET
CA1258320A (en) * 1985-04-01 1989-08-08 Madhukar B. Vora Small contactless ram cell
JPS63128750A (ja) * 1986-11-19 1988-06-01 Toshiba Corp 半導体装置
GB8719842D0 (en) * 1987-08-21 1987-09-30 Atomic Energy Authority Uk Transistor
JPH0817173B2 (ja) * 1993-11-10 1996-02-21 キヤノン販売株式会社 成膜方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3443175A (en) * 1967-03-22 1969-05-06 Rca Corp Pn-junction semiconductor with polycrystalline layer on one region
US3519901A (en) * 1968-01-29 1970-07-07 Texas Instruments Inc Bi-layer insulation structure including polycrystalline semiconductor material for integrated circuit isolation
US3664896A (en) * 1969-07-28 1972-05-23 David M Duncan Deposited silicon diffusion sources
US3646665A (en) * 1970-05-22 1972-03-07 Gen Electric Complementary mis-fet devices and method of fabrication
US3699646A (en) * 1970-12-28 1972-10-24 Intel Corp Integrated circuit structure and method for making integrated circuit structure

Also Published As

Publication number Publication date
DE2225374B2 (de) 1977-06-02
US3837935A (en) 1974-09-24
GB1388772A (en) 1975-03-26
FR2140007B1 (enExample) 1977-12-23
DE2225374A1 (de) 1973-06-20
FR2140007A1 (enExample) 1973-01-12
NL161306B (nl) 1979-08-15
NL7207071A (enExample) 1972-11-30

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Legal Events

Date Code Title Description
V1 Lapsed because of non-payment of the annual fee
NL80 Information provided on patent owner name for an already discontinued patent

Owner name: FUJITSU