DE2219696C3 - Verfarhen zum Herstellen einer monolithisch integrierten Halbleiteranordnung - Google Patents
Verfarhen zum Herstellen einer monolithisch integrierten HalbleiteranordnungInfo
- Publication number
- DE2219696C3 DE2219696C3 DE2219696A DE2219696A DE2219696C3 DE 2219696 C3 DE2219696 C3 DE 2219696C3 DE 2219696 A DE2219696 A DE 2219696A DE 2219696 A DE2219696 A DE 2219696A DE 2219696 C3 DE2219696 C3 DE 2219696C3
- Authority
- DE
- Germany
- Prior art keywords
- field effect
- effect transistors
- substrate
- transistors
- doping
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims description 20
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 230000005669 field effect Effects 0.000 claims description 41
- 239000000758 substrate Substances 0.000 claims description 35
- 238000009792 diffusion process Methods 0.000 claims description 29
- 238000002955 isolation Methods 0.000 claims description 28
- 229910052785 arsenic Inorganic materials 0.000 claims description 19
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 19
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 17
- 229910052698 phosphorus Inorganic materials 0.000 claims description 17
- 239000011574 phosphorus Substances 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 15
- 239000002019 doping agent Substances 0.000 claims description 14
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 230000000295 complement effect Effects 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000012535 impurity Substances 0.000 description 5
- 238000009413 insulation Methods 0.000 description 5
- 230000007704 transition Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000002775 capsule Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000002452 interceptive effect Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
- H10D84/401—Combinations of FETs or IGBTs with BJTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/2205—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities from the substrate during epitaxy, e.g. autodoping; Preventing or using autodoping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0107—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs
- H10D84/0109—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs the at least one component covered by H10D12/00 or H10D30/00 being a MOS device
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
- H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
- Element Separation (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13816171A | 1971-04-28 | 1971-04-28 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE2219696A1 DE2219696A1 (de) | 1972-11-16 |
| DE2219696B2 DE2219696B2 (de) | 1978-04-06 |
| DE2219696C3 true DE2219696C3 (de) | 1982-02-18 |
Family
ID=22480723
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2219696A Expired DE2219696C3 (de) | 1971-04-28 | 1972-04-21 | Verfarhen zum Herstellen einer monolithisch integrierten Halbleiteranordnung |
Country Status (12)
| Country | Link |
|---|---|
| JP (1) | JPS5037507B1 (es) |
| AU (1) | AU459156B2 (es) |
| CA (1) | CA966231A (es) |
| CH (1) | CH536029A (es) |
| DE (1) | DE2219696C3 (es) |
| ES (2) | ES402165A1 (es) |
| FR (1) | FR2134360B1 (es) |
| GB (1) | GB1358612A (es) |
| IT (1) | IT947674B (es) |
| NL (1) | NL7204804A (es) |
| SE (1) | SE384949B (es) |
| ZA (1) | ZA721782B (es) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3545040A1 (de) * | 1984-12-20 | 1986-06-26 | Sgs Microelettronica S.P.A., Catania | Verfahren zur herstellung einer vergrabenen schicht und einer kollektorzone in einer monolithischen halbleitervorrichtung |
| DE3736369A1 (de) * | 1986-11-04 | 1988-05-11 | Samsung Semiconductor Tele | Verfahren zur herstellung eines bicmos-bauelements |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2608267A1 (de) * | 1976-02-28 | 1977-09-08 | Itt Ind Gmbh Deutsche | Verfahren zum herstellen einer monolithisch integrierten schaltung |
| JPS5851561A (ja) * | 1981-09-24 | 1983-03-26 | Hitachi Ltd | 半導体集積回路装置 |
| JPS58225663A (ja) * | 1982-06-23 | 1983-12-27 | Toshiba Corp | 半導体装置の製造方法 |
| JPS5955052A (ja) * | 1982-09-24 | 1984-03-29 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
| JPS59177960A (ja) * | 1983-03-28 | 1984-10-08 | Hitachi Ltd | 半導体装置およびその製造方法 |
| US4727046A (en) * | 1986-07-16 | 1988-02-23 | Fairchild Semiconductor Corporation | Method of fabricating high performance BiCMOS structures having poly emitters and silicided bases |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3293087A (en) * | 1963-03-05 | 1966-12-20 | Fairchild Camera Instr Co | Method of making isolated epitaxial field-effect device |
| US3481801A (en) * | 1966-10-10 | 1969-12-02 | Frances Hugle | Isolation technique for integrated circuits |
| US3479233A (en) * | 1967-01-16 | 1969-11-18 | Ibm | Method for simultaneously forming a buried layer and surface connection in semiconductor devices |
| US3447046A (en) * | 1967-05-31 | 1969-05-27 | Westinghouse Electric Corp | Integrated complementary mos type transistor structure and method of making same |
| GB1280022A (en) * | 1968-08-30 | 1972-07-05 | Mullard Ltd | Improvements in and relating to semiconductor devices |
-
1972
- 1972-02-18 IT IT20713/72A patent/IT947674B/it active
- 1972-03-09 GB GB1090072A patent/GB1358612A/en not_active Expired
- 1972-03-15 ZA ZA721782A patent/ZA721782B/xx unknown
- 1972-03-16 FR FR727209920A patent/FR2134360B1/fr not_active Expired
- 1972-03-20 CH CH407572A patent/CH536029A/de not_active IP Right Cessation
- 1972-03-28 SE SE7203982A patent/SE384949B/xx unknown
- 1972-04-07 JP JP47034578A patent/JPS5037507B1/ja active Pending
- 1972-04-11 NL NL7204804A patent/NL7204804A/xx unknown
- 1972-04-20 CA CA140074356-62*AA patent/CA966231A/en not_active Expired
- 1972-04-21 DE DE2219696A patent/DE2219696C3/de not_active Expired
- 1972-04-27 ES ES402165A patent/ES402165A1/es not_active Expired
- 1972-04-27 ES ES402164A patent/ES402164A1/es not_active Expired
- 1972-04-27 AU AU41642/72A patent/AU459156B2/en not_active Expired
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3545040A1 (de) * | 1984-12-20 | 1986-06-26 | Sgs Microelettronica S.P.A., Catania | Verfahren zur herstellung einer vergrabenen schicht und einer kollektorzone in einer monolithischen halbleitervorrichtung |
| DE3545040C2 (de) * | 1984-12-20 | 1995-07-20 | Sgs Microelettronica Spa | Verfahren zur Herstellung einer vergrabenen Schicht und einer Kollektorzone in einer monolithischen Halbleitervorrichtung |
| DE3736369A1 (de) * | 1986-11-04 | 1988-05-11 | Samsung Semiconductor Tele | Verfahren zur herstellung eines bicmos-bauelements |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2134360A1 (es) | 1972-12-08 |
| AU459156B2 (en) | 1975-03-20 |
| DE2219696B2 (de) | 1978-04-06 |
| ES402164A1 (es) | 1975-03-01 |
| NL7204804A (es) | 1972-10-31 |
| SE384949B (sv) | 1976-05-24 |
| ES402165A1 (es) | 1975-03-16 |
| JPS5037507B1 (es) | 1975-12-03 |
| CA966231A (en) | 1975-04-15 |
| DE2219696A1 (de) | 1972-11-16 |
| GB1358612A (en) | 1974-07-03 |
| ZA721782B (en) | 1973-10-31 |
| CH536029A (de) | 1973-04-15 |
| AU4164272A (en) | 1973-12-20 |
| FR2134360B1 (es) | 1974-06-28 |
| IT947674B (it) | 1973-05-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C3 | Grant after two publication steps (3rd publication) | ||
| 8339 | Ceased/non-payment of the annual fee |