DE2165274A1 - Hochfrequenztransistor und Verfahren zu dessen Herstellung - Google Patents

Hochfrequenztransistor und Verfahren zu dessen Herstellung

Info

Publication number
DE2165274A1
DE2165274A1 DE19712165274 DE2165274A DE2165274A1 DE 2165274 A1 DE2165274 A1 DE 2165274A1 DE 19712165274 DE19712165274 DE 19712165274 DE 2165274 A DE2165274 A DE 2165274A DE 2165274 A1 DE2165274 A1 DE 2165274A1
Authority
DE
Germany
Prior art keywords
emitter
grid
base
conductivity type
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19712165274
Other languages
German (de)
English (en)
Inventor
David Stanley Flemington; Duclos Ronald Albert Lebanon; NJ. Jacobson (V.St.A.)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of DE2165274A1 publication Critical patent/DE2165274A1/de
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00Bipolar junction transistors [BJT]
    • H10D10/01Manufacture or treatment
    • H10D10/051Manufacture or treatment of vertical BJTs
    • H10D10/056Manufacture or treatment of vertical BJTs of vertical BJTs having the main current going through the whole substrate, e.g. power BJTs
    • H10D10/058Manufacture or treatment of vertical BJTs of vertical BJTs having the main current going through the whole substrate, e.g. power BJTs having multi-emitter structures, e.g. interdigitated, multi-cellular or distributed emitters
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/40Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/482Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes for individual devices provided for in groups H10D8/00 - H10D48/00, e.g. for power transistors
    • H10W20/484Interconnections having extended contours, e.g. pads having mesh shape or interconnections comprising connected parallel stripes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/531Shapes of wire connectors
    • H10W72/5363Shapes of wire connectors the connected ends being wedge-shaped
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/59Bond pads specially adapted therefor

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
DE19712165274 1971-04-05 1971-12-29 Hochfrequenztransistor und Verfahren zu dessen Herstellung Pending DE2165274A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13122971A 1971-04-05 1971-04-05

Publications (1)

Publication Number Publication Date
DE2165274A1 true DE2165274A1 (de) 1972-10-12

Family

ID=22448510

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19712165274 Pending DE2165274A1 (de) 1971-04-05 1971-12-29 Hochfrequenztransistor und Verfahren zu dessen Herstellung

Country Status (12)

Country Link
AR (1) AR192233A1 (https=)
AU (1) AU461334B2 (https=)
BE (1) BE777627A (https=)
BR (1) BR7108653D0 (https=)
CA (1) CA934480A (https=)
DE (1) DE2165274A1 (https=)
ES (1) ES397884A1 (https=)
FR (1) FR2131930B1 (https=)
GB (1) GB1322141A (https=)
IT (1) IT946279B (https=)
NL (1) NL7200117A (https=)
SE (1) SE377632B (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
HUP1200205A3 (en) 2009-06-25 2012-09-28 Savient Pharmaceuticals Method and kits for perdicting infusion reaction risk and antibody-mediated low of response by monitoring serum uric acid during pegylated uricare therapy
CN116759433A (zh) * 2021-06-09 2023-09-15 武汉新芯集成电路制造有限公司 半导体器件及其制造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3571913A (en) * 1968-08-20 1971-03-23 Hewlett Packard Co Method of making ohmic contact to a shallow diffused transistor
GB1262000A (en) * 1968-11-22 1972-02-02 Tokyo Shibaura Electric Co A semiconductor device and a method for manufacturing the same

Also Published As

Publication number Publication date
NL7200117A (https=) 1972-10-09
FR2131930B1 (https=) 1977-06-03
AR192233A1 (es) 1973-02-08
AU461334B2 (en) 1975-05-22
SE377632B (https=) 1975-07-14
AU3660271A (en) 1973-06-14
GB1322141A (en) 1973-07-04
BR7108653D0 (pt) 1973-05-15
IT946279B (it) 1973-05-21
FR2131930A1 (https=) 1972-11-17
CA934480A (en) 1973-09-25
ES397884A1 (es) 1975-05-16
BE777627A (fr) 1972-04-17

Similar Documents

Publication Publication Date Title
DE2640525C2 (de) Verfahren zur Herstellung einer MIS-Halbleiterschaltungsanordnung
DE2954501C2 (https=)
DE1903961C3 (de) Integrierte Halbleiterschaltung und Verfahren zu ihrer Herstellung
DE4010618C2 (de) Verfahren zur Herstellung einer Halbleitervorrichtung
DE2732184A1 (de) Halbleitervorrichtung und verfahren zu ihrer herstellung
EP0005185B1 (de) Verfahren zum gleichzeitigen Herstellen von Schottky-Sperrschichtdioden und ohmschen Kontakten nach dotierten Halbleiterzonen
DE2101609A1 (de) Kontaktanordnung für Halbleiterbauelemente
DE69420944T2 (de) Halbleitervorrichtung und herstellungsverfahren
DE4445345A1 (de) Verfahren zur Herstellung eines Bipolartransistors
EP0012220A1 (de) Verfahren zur Herstellung eines Schottky-Kontakts mit selbstjustierter Schutzringzone
DE2019655C2 (de) Verfahren zur Eindiffundierung eines den Leitungstyp verändernden Aktivators in einen Oberflächenbereich eines Halbleiterkörpers
DE3122437A1 (de) Verfahren zum herstellen eines mos-bauelements
DE2133184A1 (de) Verfahren zum Herstellen von Halbleiterbauteilen
DE1959895A1 (de) Verfahren zur Herstellung einer Halbleiteranordnung
DE2420239A1 (de) Verfahren zur herstellung doppelt diffundierter lateraler transistoren
DE2128884A1 (de) Verfahren zum Herstellen von Halbleiterbauteilen
DE1810322C3 (de) Bipolarer Transistor für hohe Ströme und hohe Stromverstärkung
DE2615438A1 (de) Verfahren zur herstellung von schaltungskomponenten integrierter schaltungen in einem siliziumsubstrat
DE2133976C3 (de) Monolithisch integrierte Halbleiteranordnung
DE1489250A1 (de) Halbleitereinrichtung und Verfahren zu ihrer Herstellung
DE3133548C2 (https=)
EP1616355B1 (de) Bipolartransistor und verfahren zur herstellung desselben
DE2111633A1 (de) Verfahren zur Herstellung eines Oberflaechen-Feldeffekt-Transistors
DE2165274A1 (de) Hochfrequenztransistor und Verfahren zu dessen Herstellung
DE2501074A1 (de) Transistoreinrichtung und verfahren zu ihrer herstellung