BE777627A - Dispositifs semiconducteurs, tels que transistors de puissance et leur procede de fabrication - Google Patents

Dispositifs semiconducteurs, tels que transistors de puissance et leur procede de fabrication

Info

Publication number
BE777627A
BE777627A BE777627A BE777627A BE777627A BE 777627 A BE777627 A BE 777627A BE 777627 A BE777627 A BE 777627A BE 777627 A BE777627 A BE 777627A BE 777627 A BE777627 A BE 777627A
Authority
BE
Belgium
Prior art keywords
manufacturing process
semiconductor devices
power transistors
transistors
power
Prior art date
Application number
BE777627A
Other languages
English (en)
French (fr)
Inventor
D S Jacobson
R A Duclos
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of BE777627A publication Critical patent/BE777627A/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00Bipolar junction transistors [BJT]
    • H10D10/01Manufacture or treatment
    • H10D10/051Manufacture or treatment of vertical BJTs
    • H10D10/056Manufacture or treatment of vertical BJTs of vertical BJTs having the main current going through the whole substrate, e.g. power BJTs
    • H10D10/058Manufacture or treatment of vertical BJTs of vertical BJTs having the main current going through the whole substrate, e.g. power BJTs having multi-emitter structures, e.g. interdigitated, multi-cellular or distributed emitters
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/40Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/482Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes for individual devices provided for in groups H10D8/00 - H10D48/00, e.g. for power transistors
    • H10W20/484Interconnections having extended contours, e.g. pads having mesh shape or interconnections comprising connected parallel stripes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/531Shapes of wire connectors
    • H10W72/5363Shapes of wire connectors the connected ends being wedge-shaped
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/59Bond pads specially adapted therefor
BE777627A 1971-04-05 1971-12-31 Dispositifs semiconducteurs, tels que transistors de puissance et leur procede de fabrication BE777627A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13122971A 1971-04-05 1971-04-05

Publications (1)

Publication Number Publication Date
BE777627A true BE777627A (fr) 1972-04-17

Family

ID=22448510

Family Applications (1)

Application Number Title Priority Date Filing Date
BE777627A BE777627A (fr) 1971-04-05 1971-12-31 Dispositifs semiconducteurs, tels que transistors de puissance et leur procede de fabrication

Country Status (12)

Country Link
AR (1) AR192233A1 (https=)
AU (1) AU461334B2 (https=)
BE (1) BE777627A (https=)
BR (1) BR7108653D0 (https=)
CA (1) CA934480A (https=)
DE (1) DE2165274A1 (https=)
ES (1) ES397884A1 (https=)
FR (1) FR2131930B1 (https=)
GB (1) GB1322141A (https=)
IT (1) IT946279B (https=)
NL (1) NL7200117A (https=)
SE (1) SE377632B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113394267A (zh) * 2021-06-09 2021-09-14 武汉新芯集成电路制造有限公司 半导体器件及其制造方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
HUP1200205A3 (en) 2009-06-25 2012-09-28 Savient Pharmaceuticals Method and kits for perdicting infusion reaction risk and antibody-mediated low of response by monitoring serum uric acid during pegylated uricare therapy

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3571913A (en) * 1968-08-20 1971-03-23 Hewlett Packard Co Method of making ohmic contact to a shallow diffused transistor
GB1262000A (en) * 1968-11-22 1972-02-02 Tokyo Shibaura Electric Co A semiconductor device and a method for manufacturing the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113394267A (zh) * 2021-06-09 2021-09-14 武汉新芯集成电路制造有限公司 半导体器件及其制造方法

Also Published As

Publication number Publication date
NL7200117A (https=) 1972-10-09
FR2131930B1 (https=) 1977-06-03
AR192233A1 (es) 1973-02-08
AU461334B2 (en) 1975-05-22
SE377632B (https=) 1975-07-14
AU3660271A (en) 1973-06-14
GB1322141A (en) 1973-07-04
BR7108653D0 (pt) 1973-05-15
IT946279B (it) 1973-05-21
DE2165274A1 (de) 1972-10-12
FR2131930A1 (https=) 1972-11-17
CA934480A (en) 1973-09-25
ES397884A1 (es) 1975-05-16

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