AU461334B2 - Radiofrequency transistor structure and method for making - Google Patents

Radiofrequency transistor structure and method for making

Info

Publication number
AU461334B2
AU461334B2 AU36602/71A AU3660271A AU461334B2 AU 461334 B2 AU461334 B2 AU 461334B2 AU 36602/71 A AU36602/71 A AU 36602/71A AU 3660271 A AU3660271 A AU 3660271A AU 461334 B2 AU461334 B2 AU 461334B2
Authority
AU
Australia
Prior art keywords
making
transistor structure
radiofrequency
radiofrequency transistor
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
AU36602/71A
Other languages
English (en)
Other versions
AU3660271A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rca Ogrforaxicn
Original Assignee
Rca Ogrforaxicn
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Ogrforaxicn filed Critical Rca Ogrforaxicn
Publication of AU3660271A publication Critical patent/AU3660271A/en
Application granted granted Critical
Publication of AU461334B2 publication Critical patent/AU461334B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/051—Manufacture or treatment of vertical BJTs
    • H10D10/056—Manufacture or treatment of vertical BJTs of vertical BJTs having the main current going through the whole substrate, e.g. power BJTs
    • H10D10/058—Manufacture or treatment of vertical BJTs of vertical BJTs having the main current going through the whole substrate, e.g. power BJTs having multi-emitter structures, e.g. interdigitated, multi-cellular or distributed emitters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/482—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes for individual devices provided for in groups H10D8/00 - H10D48/00, e.g. for power transistors
    • H10W20/484—Interconnections having extended contours, e.g. pads having mesh shape or interconnections comprising connected parallel stripes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
AU36602/71A 1971-04-05 1971-12-08 Radiofrequency transistor structure and method for making Expired AU461334B2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13122971A 1971-04-05 1971-04-05
USUS131,229 1971-04-05

Publications (2)

Publication Number Publication Date
AU3660271A AU3660271A (en) 1973-06-14
AU461334B2 true AU461334B2 (en) 1975-05-22

Family

ID=22448510

Family Applications (1)

Application Number Title Priority Date Filing Date
AU36602/71A Expired AU461334B2 (en) 1971-04-05 1971-12-08 Radiofrequency transistor structure and method for making

Country Status (12)

Country Link
AR (1) AR192233A1 (https=)
AU (1) AU461334B2 (https=)
BE (1) BE777627A (https=)
BR (1) BR7108653D0 (https=)
CA (1) CA934480A (https=)
DE (1) DE2165274A1 (https=)
ES (1) ES397884A1 (https=)
FR (1) FR2131930B1 (https=)
GB (1) GB1322141A (https=)
IT (1) IT946279B (https=)
NL (1) NL7200117A (https=)
SE (1) SE377632B (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
HUP1200205A3 (en) 2009-06-25 2012-09-28 Savient Pharmaceuticals Method and kits for perdicting infusion reaction risk and antibody-mediated low of response by monitoring serum uric acid during pegylated uricare therapy
CN116759433A (zh) * 2021-06-09 2023-09-15 武汉新芯集成电路制造有限公司 半导体器件及其制造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3571913A (en) * 1968-08-20 1971-03-23 Hewlett Packard Co Method of making ohmic contact to a shallow diffused transistor
GB1262000A (en) * 1968-11-22 1972-02-02 Tokyo Shibaura Electric Co A semiconductor device and a method for manufacturing the same

Also Published As

Publication number Publication date
NL7200117A (https=) 1972-10-09
FR2131930B1 (https=) 1977-06-03
AR192233A1 (es) 1973-02-08
SE377632B (https=) 1975-07-14
AU3660271A (en) 1973-06-14
GB1322141A (en) 1973-07-04
BR7108653D0 (pt) 1973-05-15
IT946279B (it) 1973-05-21
DE2165274A1 (de) 1972-10-12
FR2131930A1 (https=) 1972-11-17
CA934480A (en) 1973-09-25
ES397884A1 (es) 1975-05-16
BE777627A (fr) 1972-04-17

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