ES397884A1 - Un dispositivo semiconductor disenado para funcionar a altapotencia y alta frecuencia. - Google Patents

Un dispositivo semiconductor disenado para funcionar a altapotencia y alta frecuencia.

Info

Publication number
ES397884A1
ES397884A1 ES397884A ES397884A ES397884A1 ES 397884 A1 ES397884 A1 ES 397884A1 ES 397884 A ES397884 A ES 397884A ES 397884 A ES397884 A ES 397884A ES 397884 A1 ES397884 A1 ES 397884A1
Authority
ES
Spain
Prior art keywords
type
base region
region
base
operate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES397884A
Other languages
English (en)
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of ES397884A1 publication Critical patent/ES397884A1/es
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00Bipolar junction transistors [BJT]
    • H10D10/01Manufacture or treatment
    • H10D10/051Manufacture or treatment of vertical BJTs
    • H10D10/056Manufacture or treatment of vertical BJTs of vertical BJTs having the main current going through the whole substrate, e.g. power BJTs
    • H10D10/058Manufacture or treatment of vertical BJTs of vertical BJTs having the main current going through the whole substrate, e.g. power BJTs having multi-emitter structures, e.g. interdigitated, multi-cellular or distributed emitters
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/40Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/482Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes for individual devices provided for in groups H10D8/00 - H10D48/00, e.g. for power transistors
    • H10W20/484Interconnections having extended contours, e.g. pads having mesh shape or interconnections comprising connected parallel stripes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/531Shapes of wire connectors
    • H10W72/5363Shapes of wire connectors the connected ends being wedge-shaped
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/59Bond pads specially adapted therefor

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
ES397884A 1971-04-05 1971-12-11 Un dispositivo semiconductor disenado para funcionar a altapotencia y alta frecuencia. Expired ES397884A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13122971A 1971-04-05 1971-04-05

Publications (1)

Publication Number Publication Date
ES397884A1 true ES397884A1 (es) 1975-05-16

Family

ID=22448510

Family Applications (1)

Application Number Title Priority Date Filing Date
ES397884A Expired ES397884A1 (es) 1971-04-05 1971-12-11 Un dispositivo semiconductor disenado para funcionar a altapotencia y alta frecuencia.

Country Status (12)

Country Link
AR (1) AR192233A1 (https=)
AU (1) AU461334B2 (https=)
BE (1) BE777627A (https=)
BR (1) BR7108653D0 (https=)
CA (1) CA934480A (https=)
DE (1) DE2165274A1 (https=)
ES (1) ES397884A1 (https=)
FR (1) FR2131930B1 (https=)
GB (1) GB1322141A (https=)
IT (1) IT946279B (https=)
NL (1) NL7200117A (https=)
SE (1) SE377632B (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
HUP1200205A3 (en) 2009-06-25 2012-09-28 Savient Pharmaceuticals Method and kits for perdicting infusion reaction risk and antibody-mediated low of response by monitoring serum uric acid during pegylated uricare therapy
CN116759433A (zh) * 2021-06-09 2023-09-15 武汉新芯集成电路制造有限公司 半导体器件及其制造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3571913A (en) * 1968-08-20 1971-03-23 Hewlett Packard Co Method of making ohmic contact to a shallow diffused transistor
GB1262000A (en) * 1968-11-22 1972-02-02 Tokyo Shibaura Electric Co A semiconductor device and a method for manufacturing the same

Also Published As

Publication number Publication date
NL7200117A (https=) 1972-10-09
FR2131930B1 (https=) 1977-06-03
AR192233A1 (es) 1973-02-08
AU461334B2 (en) 1975-05-22
SE377632B (https=) 1975-07-14
AU3660271A (en) 1973-06-14
GB1322141A (en) 1973-07-04
BR7108653D0 (pt) 1973-05-15
IT946279B (it) 1973-05-21
DE2165274A1 (de) 1972-10-12
FR2131930A1 (https=) 1972-11-17
CA934480A (en) 1973-09-25
BE777627A (fr) 1972-04-17

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