GB1322141A - Radio frequency transistor structure and method for making - Google Patents

Radio frequency transistor structure and method for making

Info

Publication number
GB1322141A
GB1322141A GB4272A GB4272A GB1322141A GB 1322141 A GB1322141 A GB 1322141A GB 4272 A GB4272 A GB 4272A GB 4272 A GB4272 A GB 4272A GB 1322141 A GB1322141 A GB 1322141A
Authority
GB
United Kingdom
Prior art keywords
grid
emitter
base
overlay
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4272A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of GB1322141A publication Critical patent/GB1322141A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/051—Manufacture or treatment of vertical BJTs
    • H10D10/056—Manufacture or treatment of vertical BJTs of vertical BJTs having the main current going through the whole substrate, e.g. power BJTs
    • H10D10/058—Manufacture or treatment of vertical BJTs of vertical BJTs having the main current going through the whole substrate, e.g. power BJTs having multi-emitter structures, e.g. interdigitated, multi-cellular or distributed emitters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/482—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes for individual devices provided for in groups H10D8/00 - H10D48/00, e.g. for power transistors
    • H10W20/484—Interconnections having extended contours, e.g. pads having mesh shape or interconnections comprising connected parallel stripes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
GB4272A 1971-04-05 1972-01-03 Radio frequency transistor structure and method for making Expired GB1322141A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13122971A 1971-04-05 1971-04-05

Publications (1)

Publication Number Publication Date
GB1322141A true GB1322141A (en) 1973-07-04

Family

ID=22448510

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4272A Expired GB1322141A (en) 1971-04-05 1972-01-03 Radio frequency transistor structure and method for making

Country Status (12)

Country Link
AR (1) AR192233A1 (https=)
AU (1) AU461334B2 (https=)
BE (1) BE777627A (https=)
BR (1) BR7108653D0 (https=)
CA (1) CA934480A (https=)
DE (1) DE2165274A1 (https=)
ES (1) ES397884A1 (https=)
FR (1) FR2131930B1 (https=)
GB (1) GB1322141A (https=)
IT (1) IT946279B (https=)
NL (1) NL7200117A (https=)
SE (1) SE377632B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12560596B2 (en) 2009-06-25 2026-02-24 Amgen Inc. Methods and kits for predicting infusion reaction risk and antibody-mediated loss of response by monitoring serum uric acid during pegylated uricase therapy

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116759433A (zh) * 2021-06-09 2023-09-15 武汉新芯集成电路制造有限公司 半导体器件及其制造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3571913A (en) * 1968-08-20 1971-03-23 Hewlett Packard Co Method of making ohmic contact to a shallow diffused transistor
GB1262000A (en) * 1968-11-22 1972-02-02 Tokyo Shibaura Electric Co A semiconductor device and a method for manufacturing the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12560596B2 (en) 2009-06-25 2026-02-24 Amgen Inc. Methods and kits for predicting infusion reaction risk and antibody-mediated loss of response by monitoring serum uric acid during pegylated uricase therapy

Also Published As

Publication number Publication date
NL7200117A (https=) 1972-10-09
FR2131930B1 (https=) 1977-06-03
AR192233A1 (es) 1973-02-08
AU461334B2 (en) 1975-05-22
SE377632B (https=) 1975-07-14
AU3660271A (en) 1973-06-14
BR7108653D0 (pt) 1973-05-15
IT946279B (it) 1973-05-21
DE2165274A1 (de) 1972-10-12
FR2131930A1 (https=) 1972-11-17
CA934480A (en) 1973-09-25
ES397884A1 (es) 1975-05-16
BE777627A (fr) 1972-04-17

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee