DE19941408A1 - Fotomaske, Verfahren zur Herstellung einer Fotomaske, sowie Verfahren zur Herstellung eines integrierten Halbleiterschaltkreises - Google Patents

Fotomaske, Verfahren zur Herstellung einer Fotomaske, sowie Verfahren zur Herstellung eines integrierten Halbleiterschaltkreises

Info

Publication number
DE19941408A1
DE19941408A1 DE19941408A DE19941408A DE19941408A1 DE 19941408 A1 DE19941408 A1 DE 19941408A1 DE 19941408 A DE19941408 A DE 19941408A DE 19941408 A DE19941408 A DE 19941408A DE 19941408 A1 DE19941408 A1 DE 19941408A1
Authority
DE
Germany
Prior art keywords
pattern
transparent substrate
shading
film
phase shifter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE19941408A
Other languages
German (de)
English (en)
Inventor
Kazuya Kamon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE19941408A1 publication Critical patent/DE19941408A1/de
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/46—Antireflective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE19941408A 1999-01-13 1999-08-31 Fotomaske, Verfahren zur Herstellung einer Fotomaske, sowie Verfahren zur Herstellung eines integrierten Halbleiterschaltkreises Ceased DE19941408A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP695699A JP2000206671A (ja) 1999-01-13 1999-01-13 フォトマスク、フォトマスクの製造方法、および半導体集積回路装置の製造方法

Publications (1)

Publication Number Publication Date
DE19941408A1 true DE19941408A1 (de) 2000-07-27

Family

ID=11652689

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19941408A Ceased DE19941408A1 (de) 1999-01-13 1999-08-31 Fotomaske, Verfahren zur Herstellung einer Fotomaske, sowie Verfahren zur Herstellung eines integrierten Halbleiterschaltkreises

Country Status (4)

Country Link
US (1) US6737198B2 (enExample)
JP (1) JP2000206671A (enExample)
KR (1) KR100335297B1 (enExample)
DE (1) DE19941408A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004021415A1 (de) * 2004-04-30 2005-11-24 Infineon Technologies Ag Verfahren zur Strukturbelichtung einer photoreaktiven Schicht und zugehörige Belichtungsvorrichtung

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020155389A1 (en) * 2000-10-24 2002-10-24 Bharath Rangarajan Inverse resist coating process
JP4497263B2 (ja) * 2000-11-20 2010-07-07 信越化学工業株式会社 フォトマスクブランクス及びその製造方法
KR100604814B1 (ko) * 2002-11-11 2006-07-28 삼성전자주식회사 위상 에지 위상 반전 마스크 및 그 제조방법
JP2004294990A (ja) * 2003-03-28 2004-10-21 Semiconductor Leading Edge Technologies Inc 位相シフトマスク、位相シフトマスクの製造方法及び露光方法
US20050130048A1 (en) * 2003-11-10 2005-06-16 Tomoyuki Nakano Electro-optic device substrate and method for manufacturing the same electro-optic device and method for manufacturing the same, photomask, and electronic device
US20080055581A1 (en) * 2004-04-27 2008-03-06 Rogers John A Devices and methods for pattern generation by ink lithography
US20060216614A1 (en) * 2005-03-24 2006-09-28 Taiwan Semiconductor Manufacturing Co., Ltd. Method of mask making and structure thereof for improving mask ESD immunity
JP4332196B2 (ja) 2005-07-28 2009-09-16 富士通マイクロエレクトロニクス株式会社 フォトマスクおよびその製造方法、電子装置の製造方法
US7604906B1 (en) * 2005-09-21 2009-10-20 Kla- Tencor Technologies Corporation Films for prevention of crystal growth on fused silica substrates for semiconductor lithography
JP4345821B2 (ja) * 2007-01-22 2009-10-14 エルピーダメモリ株式会社 露光用マスク及びパターン形成方法
KR100947550B1 (ko) * 2008-09-24 2010-03-12 위아코퍼레이션 주식회사 레이저 반사형 마스크 및 그 제조방법
KR20100127664A (ko) * 2009-05-26 2010-12-06 주식회사 하이닉스반도체 바이너리 블랭크를 이용한 위상반전마스크 형성방법
US8614032B2 (en) 2009-09-02 2013-12-24 Wi-A Corporation Laser-reflective mask and method for manufacturing same
JP6728919B2 (ja) * 2015-04-14 2020-07-22 大日本印刷株式会社 フォトマスクおよびフォトマスクの製造方法
JP2018036567A (ja) * 2016-09-01 2018-03-08 株式会社ディスコ ウエーハ加工用フォトマスクの製造方法
CN113296352B (zh) * 2020-02-22 2023-01-24 长鑫存储技术有限公司 应用于半导体光刻工艺中的掩膜图形及光刻工艺方法

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JPS5762052A (en) 1980-09-30 1982-04-14 Nippon Kogaku Kk <Nikon> Original plate to be projected for use in transmission
JPS57207250A (en) 1981-06-17 1982-12-18 Fuji Photo Film Co Ltd Heat developing color photosensitive material
EP0090924B1 (en) 1982-04-05 1987-11-11 International Business Machines Corporation Method of increasing the image resolution of a transmitting mask and improved masks for performing the method
JPH0690505B2 (ja) 1985-09-20 1994-11-14 株式会社日立製作所 ホトマスク
JPH0690506B2 (ja) 1985-09-20 1994-11-14 株式会社日立製作所 ホトマスク
US4902899A (en) 1987-06-01 1990-02-20 International Business Machines Corporation Lithographic process having improved image quality
JPS6488550A (en) 1987-09-30 1989-04-03 Sharp Kk Photomask
JPH0830890B2 (ja) 1988-02-04 1996-03-27 株式会社日立製作所 厚さ分布を有するレジストパターンの形成方法
JPH03263045A (ja) 1990-03-14 1991-11-22 Fujitsu Ltd フォトリソグラフィ用マスク及びその製造方法
JPH045655A (ja) 1990-04-23 1992-01-09 Mitsubishi Electric Corp 位相シフトマスク及びその作成方法
JPH04355448A (ja) * 1991-06-03 1992-12-09 Fujitsu Ltd レチクル及びその製造方法
JPH0695354A (ja) * 1992-09-10 1994-04-08 Fujitsu Ltd 光学マスク
JP2616354B2 (ja) 1992-09-10 1997-06-04 澁谷工業株式会社 透析装置の透析容器
JPH06289593A (ja) * 1993-04-02 1994-10-18 Nippon Steel Corp マスクの製造方法
JPH06301194A (ja) 1993-04-15 1994-10-28 Hitachi Ltd フォトマスクの製造方法およびフォトマスク
JPH06308715A (ja) * 1993-04-27 1994-11-04 Sony Corp 位相シフト露光マスクの形成方法、位相シフト露光マスク、及び位相シフト露光方法
JPH07159969A (ja) * 1993-12-01 1995-06-23 Hitachi Ltd 位相シフトマスクおよびその製造方法
KR0151427B1 (ko) * 1994-03-04 1999-02-18 문정환 위상 반전마스크 및 그의 제조방법
JP3390528B2 (ja) * 1994-06-17 2003-03-24 三菱電機株式会社 フォトマスクの製造方法
US5480747A (en) * 1994-11-21 1996-01-02 Sematech, Inc. Attenuated phase shifting mask with buried absorbers
JP2658966B2 (ja) * 1995-04-20 1997-09-30 日本電気株式会社 フォトマスク及びその製造方法
KR0186190B1 (en) * 1995-09-25 1999-04-01 Hyundai Micro Electronics Co Phase shift mask and its manufacture
JPH1010699A (ja) 1996-06-20 1998-01-16 Toppan Printing Co Ltd ハーフトーン型位相シフトマスク及びその製造方法
KR100195333B1 (ko) * 1996-09-02 1999-06-15 구본준 위상반전마스크 및 그 제조방법
JP3335092B2 (ja) * 1996-12-20 2002-10-15 シャープ株式会社 フォトマスクの製造方法
JP2904170B2 (ja) * 1996-12-27 1999-06-14 日本電気株式会社 ハーフトーン位相シフトマスク及びハーフトーン位相シフトマスクの欠陥修正方法
KR100244482B1 (ko) * 1997-06-21 2000-03-02 김영환 위상 반전 마스크 제조 방법
JPH1126355A (ja) * 1997-07-07 1999-01-29 Toshiba Corp 露光用マスク及びその製造方法
US6037083A (en) * 1998-12-22 2000-03-14 Hoya Corporation Halftone phase shift mask blanks, halftone phase shift masks, and fine pattern forming method
JP3263045B2 (ja) 1999-06-29 2002-03-04 川崎重工業株式会社 廃棄物・焼却灰の安定化方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004021415A1 (de) * 2004-04-30 2005-11-24 Infineon Technologies Ag Verfahren zur Strukturbelichtung einer photoreaktiven Schicht und zugehörige Belichtungsvorrichtung
DE102004021415B4 (de) * 2004-04-30 2007-03-22 Infineon Technologies Ag Verfahren zum Strukturbelichten einer photoreaktiven Schicht und zugehörige Be lichtungsvorrichtung

Also Published As

Publication number Publication date
KR100335297B1 (ko) 2002-05-03
KR20000052320A (ko) 2000-08-16
JP2000206671A (ja) 2000-07-28
US6737198B2 (en) 2004-05-18
US20010049062A1 (en) 2001-12-06

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8131 Rejection