JP2000206671A - フォトマスク、フォトマスクの製造方法、および半導体集積回路装置の製造方法 - Google Patents

フォトマスク、フォトマスクの製造方法、および半導体集積回路装置の製造方法

Info

Publication number
JP2000206671A
JP2000206671A JP695699A JP695699A JP2000206671A JP 2000206671 A JP2000206671 A JP 2000206671A JP 695699 A JP695699 A JP 695699A JP 695699 A JP695699 A JP 695699A JP 2000206671 A JP2000206671 A JP 2000206671A
Authority
JP
Japan
Prior art keywords
photomask
phase shift
pattern
light
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP695699A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000206671A5 (enExample
Inventor
Kazuya Kamon
和也 加門
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP695699A priority Critical patent/JP2000206671A/ja
Priority to US09/320,946 priority patent/US6737198B2/en
Priority to DE19941408A priority patent/DE19941408A1/de
Priority to KR1019990037299A priority patent/KR100335297B1/ko
Publication of JP2000206671A publication Critical patent/JP2000206671A/ja
Publication of JP2000206671A5 publication Critical patent/JP2000206671A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/46—Antireflective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP695699A 1999-01-13 1999-01-13 フォトマスク、フォトマスクの製造方法、および半導体集積回路装置の製造方法 Pending JP2000206671A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP695699A JP2000206671A (ja) 1999-01-13 1999-01-13 フォトマスク、フォトマスクの製造方法、および半導体集積回路装置の製造方法
US09/320,946 US6737198B2 (en) 1999-01-13 1999-05-26 Photomask, fabrication method of photomask, and fabrication method of semiconductor integrated circuit
DE19941408A DE19941408A1 (de) 1999-01-13 1999-08-31 Fotomaske, Verfahren zur Herstellung einer Fotomaske, sowie Verfahren zur Herstellung eines integrierten Halbleiterschaltkreises
KR1019990037299A KR100335297B1 (ko) 1999-01-13 1999-09-03 포토 마스크, 포토 마스크의 제조 방법, 및 반도체 집적 회로 장치의 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP695699A JP2000206671A (ja) 1999-01-13 1999-01-13 フォトマスク、フォトマスクの製造方法、および半導体集積回路装置の製造方法

Publications (2)

Publication Number Publication Date
JP2000206671A true JP2000206671A (ja) 2000-07-28
JP2000206671A5 JP2000206671A5 (enExample) 2006-08-24

Family

ID=11652689

Family Applications (1)

Application Number Title Priority Date Filing Date
JP695699A Pending JP2000206671A (ja) 1999-01-13 1999-01-13 フォトマスク、フォトマスクの製造方法、および半導体集積回路装置の製造方法

Country Status (4)

Country Link
US (1) US6737198B2 (enExample)
JP (1) JP2000206671A (enExample)
KR (1) KR100335297B1 (enExample)
DE (1) DE19941408A1 (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002156743A (ja) * 2000-11-20 2002-05-31 Shin Etsu Chem Co Ltd フォトマスクブランクス及びその製造方法
JP2004294990A (ja) * 2003-03-28 2004-10-21 Semiconductor Leading Edge Technologies Inc 位相シフトマスク、位相シフトマスクの製造方法及び露光方法
KR100947550B1 (ko) * 2008-09-24 2010-03-12 위아코퍼레이션 주식회사 레이저 반사형 마스크 및 그 제조방법
US7879512B2 (en) 2005-07-28 2011-02-01 Fujitsu Semiconductor Limited Photomask, manufacturing method thereof, and electronic device manufacturing method
WO2011027972A3 (ko) * 2009-09-02 2011-04-28 위아코퍼레이션 주식회사 레이저 반사형 마스크 및 그 제조방법
JP2016206668A (ja) * 2015-04-14 2016-12-08 大日本印刷株式会社 フォトマスクおよびフォトマスクの製造方法
JP2018036567A (ja) * 2016-09-01 2018-03-08 株式会社ディスコ ウエーハ加工用フォトマスクの製造方法

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020155389A1 (en) * 2000-10-24 2002-10-24 Bharath Rangarajan Inverse resist coating process
KR100604814B1 (ko) * 2002-11-11 2006-07-28 삼성전자주식회사 위상 에지 위상 반전 마스크 및 그 제조방법
US20050130048A1 (en) * 2003-11-10 2005-06-16 Tomoyuki Nakano Electro-optic device substrate and method for manufacturing the same electro-optic device and method for manufacturing the same, photomask, and electronic device
US20080055581A1 (en) * 2004-04-27 2008-03-06 Rogers John A Devices and methods for pattern generation by ink lithography
DE102004021415B4 (de) * 2004-04-30 2007-03-22 Infineon Technologies Ag Verfahren zum Strukturbelichten einer photoreaktiven Schicht und zugehörige Be lichtungsvorrichtung
US20060216614A1 (en) * 2005-03-24 2006-09-28 Taiwan Semiconductor Manufacturing Co., Ltd. Method of mask making and structure thereof for improving mask ESD immunity
US7604906B1 (en) * 2005-09-21 2009-10-20 Kla- Tencor Technologies Corporation Films for prevention of crystal growth on fused silica substrates for semiconductor lithography
JP4345821B2 (ja) * 2007-01-22 2009-10-14 エルピーダメモリ株式会社 露光用マスク及びパターン形成方法
KR20100127664A (ko) * 2009-05-26 2010-12-06 주식회사 하이닉스반도체 바이너리 블랭크를 이용한 위상반전마스크 형성방법
CN113296352B (zh) * 2020-02-22 2023-01-24 长鑫存储技术有限公司 应用于半导体光刻工艺中的掩膜图形及光刻工艺方法

Citations (10)

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JPH04355448A (ja) * 1991-06-03 1992-12-09 Fujitsu Ltd レチクル及びその製造方法
JPH0695354A (ja) * 1992-09-10 1994-04-08 Fujitsu Ltd 光学マスク
JPH06289593A (ja) * 1993-04-02 1994-10-18 Nippon Steel Corp マスクの製造方法
JPH06308715A (ja) * 1993-04-27 1994-11-04 Sony Corp 位相シフト露光マスクの形成方法、位相シフト露光マスク、及び位相シフト露光方法
JPH07159969A (ja) * 1993-12-01 1995-06-23 Hitachi Ltd 位相シフトマスクおよびその製造方法
JPH086234A (ja) * 1994-06-17 1996-01-12 Mitsubishi Electric Corp フォトマスクおよびその製造方法
JPH08292549A (ja) * 1995-04-20 1996-11-05 Nec Corp フォトマスク及びその製造方法
JPH1090875A (ja) * 1996-09-02 1998-04-10 Lg Semicon Co Ltd 位相シフトマスク及びその製造方法
JPH10186628A (ja) * 1996-12-20 1998-07-14 Sharp Corp フォトマスクの製造方法
JPH1126355A (ja) * 1997-07-07 1999-01-29 Toshiba Corp 露光用マスク及びその製造方法

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JPS5762052A (en) 1980-09-30 1982-04-14 Nippon Kogaku Kk <Nikon> Original plate to be projected for use in transmission
JPS57207250A (en) 1981-06-17 1982-12-18 Fuji Photo Film Co Ltd Heat developing color photosensitive material
EP0090924B1 (en) 1982-04-05 1987-11-11 International Business Machines Corporation Method of increasing the image resolution of a transmitting mask and improved masks for performing the method
JPH0690505B2 (ja) 1985-09-20 1994-11-14 株式会社日立製作所 ホトマスク
JPH0690506B2 (ja) 1985-09-20 1994-11-14 株式会社日立製作所 ホトマスク
US4902899A (en) 1987-06-01 1990-02-20 International Business Machines Corporation Lithographic process having improved image quality
JPS6488550A (en) 1987-09-30 1989-04-03 Sharp Kk Photomask
JPH0830890B2 (ja) 1988-02-04 1996-03-27 株式会社日立製作所 厚さ分布を有するレジストパターンの形成方法
JPH03263045A (ja) 1990-03-14 1991-11-22 Fujitsu Ltd フォトリソグラフィ用マスク及びその製造方法
JPH045655A (ja) 1990-04-23 1992-01-09 Mitsubishi Electric Corp 位相シフトマスク及びその作成方法
JP2616354B2 (ja) 1992-09-10 1997-06-04 澁谷工業株式会社 透析装置の透析容器
JPH06301194A (ja) 1993-04-15 1994-10-28 Hitachi Ltd フォトマスクの製造方法およびフォトマスク
KR0151427B1 (ko) * 1994-03-04 1999-02-18 문정환 위상 반전마스크 및 그의 제조방법
US5480747A (en) * 1994-11-21 1996-01-02 Sematech, Inc. Attenuated phase shifting mask with buried absorbers
KR0186190B1 (en) * 1995-09-25 1999-04-01 Hyundai Micro Electronics Co Phase shift mask and its manufacture
JPH1010699A (ja) 1996-06-20 1998-01-16 Toppan Printing Co Ltd ハーフトーン型位相シフトマスク及びその製造方法
JP2904170B2 (ja) * 1996-12-27 1999-06-14 日本電気株式会社 ハーフトーン位相シフトマスク及びハーフトーン位相シフトマスクの欠陥修正方法
KR100244482B1 (ko) * 1997-06-21 2000-03-02 김영환 위상 반전 마스크 제조 방법
US6037083A (en) * 1998-12-22 2000-03-14 Hoya Corporation Halftone phase shift mask blanks, halftone phase shift masks, and fine pattern forming method
JP3263045B2 (ja) 1999-06-29 2002-03-04 川崎重工業株式会社 廃棄物・焼却灰の安定化方法

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04355448A (ja) * 1991-06-03 1992-12-09 Fujitsu Ltd レチクル及びその製造方法
JPH0695354A (ja) * 1992-09-10 1994-04-08 Fujitsu Ltd 光学マスク
JPH06289593A (ja) * 1993-04-02 1994-10-18 Nippon Steel Corp マスクの製造方法
JPH06308715A (ja) * 1993-04-27 1994-11-04 Sony Corp 位相シフト露光マスクの形成方法、位相シフト露光マスク、及び位相シフト露光方法
JPH07159969A (ja) * 1993-12-01 1995-06-23 Hitachi Ltd 位相シフトマスクおよびその製造方法
JPH086234A (ja) * 1994-06-17 1996-01-12 Mitsubishi Electric Corp フォトマスクおよびその製造方法
JPH08292549A (ja) * 1995-04-20 1996-11-05 Nec Corp フォトマスク及びその製造方法
JPH1090875A (ja) * 1996-09-02 1998-04-10 Lg Semicon Co Ltd 位相シフトマスク及びその製造方法
JPH10186628A (ja) * 1996-12-20 1998-07-14 Sharp Corp フォトマスクの製造方法
JPH1126355A (ja) * 1997-07-07 1999-01-29 Toshiba Corp 露光用マスク及びその製造方法

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002156743A (ja) * 2000-11-20 2002-05-31 Shin Etsu Chem Co Ltd フォトマスクブランクス及びその製造方法
JP2004294990A (ja) * 2003-03-28 2004-10-21 Semiconductor Leading Edge Technologies Inc 位相シフトマスク、位相シフトマスクの製造方法及び露光方法
US7879512B2 (en) 2005-07-28 2011-02-01 Fujitsu Semiconductor Limited Photomask, manufacturing method thereof, and electronic device manufacturing method
KR100947550B1 (ko) * 2008-09-24 2010-03-12 위아코퍼레이션 주식회사 레이저 반사형 마스크 및 그 제조방법
WO2011027972A3 (ko) * 2009-09-02 2011-04-28 위아코퍼레이션 주식회사 레이저 반사형 마스크 및 그 제조방법
US8614036B2 (en) 2009-09-02 2013-12-24 Wi-A Corporation Method for manufacturing laser reflective mask
US8614032B2 (en) 2009-09-02 2013-12-24 Wi-A Corporation Laser-reflective mask and method for manufacturing same
JP2016206668A (ja) * 2015-04-14 2016-12-08 大日本印刷株式会社 フォトマスクおよびフォトマスクの製造方法
JP2018036567A (ja) * 2016-09-01 2018-03-08 株式会社ディスコ ウエーハ加工用フォトマスクの製造方法

Also Published As

Publication number Publication date
KR100335297B1 (ko) 2002-05-03
KR20000052320A (ko) 2000-08-16
DE19941408A1 (de) 2000-07-27
US6737198B2 (en) 2004-05-18
US20010049062A1 (en) 2001-12-06

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