DE19602814B4 - Reihenredundanz für nicht-flüchtige Halbleiterspeicher - Google Patents

Reihenredundanz für nicht-flüchtige Halbleiterspeicher Download PDF

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Publication number
DE19602814B4
DE19602814B4 DE19602814A DE19602814A DE19602814B4 DE 19602814 B4 DE19602814 B4 DE 19602814B4 DE 19602814 A DE19602814 A DE 19602814A DE 19602814 A DE19602814 A DE 19602814A DE 19602814 B4 DE19602814 B4 DE 19602814B4
Authority
DE
Germany
Prior art keywords
volatile semiconductor
semiconductor memories
series redundancy
redundancy
series
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE19602814A
Other languages
English (en)
Other versions
DE19602814A1 (de
Inventor
Sung-Soo Lee
Jin-Ki Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of DE19602814A1 publication Critical patent/DE19602814A1/de
Application granted granted Critical
Publication of DE19602814B4 publication Critical patent/DE19602814B4/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
DE19602814A 1995-01-28 1996-01-26 Reihenredundanz für nicht-flüchtige Halbleiterspeicher Expired - Fee Related DE19602814B4 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950001737A KR0158484B1 (ko) 1995-01-28 1995-01-28 불휘발성 반도체 메모리의 행리던던씨

Publications (2)

Publication Number Publication Date
DE19602814A1 DE19602814A1 (de) 1996-08-01
DE19602814B4 true DE19602814B4 (de) 2005-03-10

Family

ID=19407532

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19602814A Expired - Fee Related DE19602814B4 (de) 1995-01-28 1996-01-26 Reihenredundanz für nicht-flüchtige Halbleiterspeicher

Country Status (4)

Country Link
US (1) US5699306A (de)
JP (1) JP2732824B2 (de)
KR (1) KR0158484B1 (de)
DE (1) DE19602814B4 (de)

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JP2982695B2 (ja) * 1996-07-15 1999-11-29 日本電気株式会社 半導体メモリ
JP2982700B2 (ja) * 1996-08-09 1999-11-29 日本電気株式会社 冗長デコーダ回路
US6115286A (en) * 1997-03-05 2000-09-05 Siemens Aktiengesellschaft Data memory
US6055611A (en) * 1997-07-09 2000-04-25 Micron Technology, Inc. Method and apparatus for enabling redundant memory
KR100333720B1 (ko) * 1998-06-30 2002-06-20 박종섭 강유전체메모리소자의리던던시회로
JP3880210B2 (ja) * 1998-08-04 2007-02-14 エルピーダメモリ株式会社 半導体装置
JP3522116B2 (ja) * 1998-08-04 2004-04-26 富士通株式会社 複数ビットのデータプリフェッチ機能をもつメモリデバイス
US6011722A (en) * 1998-10-13 2000-01-04 Lucent Technologies Inc. Method for erasing and programming memory devices
US6571348B1 (en) * 1999-04-06 2003-05-27 Genesis Semiconductor, Inc. Method of and apparatus for providing look ahead column redundancy access within a memory
JP2000293998A (ja) * 1999-04-07 2000-10-20 Nec Corp 半導体記憶装置
KR100370232B1 (ko) * 1999-04-28 2003-01-29 삼성전자 주식회사 결함 셀을 리던던시 셀로의 대체를 반복 수행할 수 있는 리던던시 회로
KR100331281B1 (ko) * 1999-10-20 2002-04-06 박종섭 메모리장치의 리던던시 셀 리페어 회로
US6505308B1 (en) * 1999-10-28 2003-01-07 Lsi Logic Corporation Fast built-in self-repair circuit
JP2001184890A (ja) * 1999-12-27 2001-07-06 Mitsubishi Electric Corp 半導体記憶装置
KR100630662B1 (ko) * 2000-03-02 2006-10-02 삼성전자주식회사 반도체 메모리장치의 리던던시 제어회로
JP4600792B2 (ja) * 2000-07-13 2010-12-15 エルピーダメモリ株式会社 半導体装置
JP3680725B2 (ja) * 2000-10-26 2005-08-10 松下電器産業株式会社 半導体記憶装置
KR100572758B1 (ko) * 2000-11-02 2006-04-24 (주)이엠엘에스아이 로우 리던던시 리페어 효율을 증가시키는 반도체 메모리장치
JP2002216493A (ja) * 2001-01-23 2002-08-02 Mitsubishi Electric Corp 救済修正回路および半導体記憶装置
US6714467B2 (en) * 2002-03-19 2004-03-30 Broadcom Corporation Block redundancy implementation in heirarchical RAM's
DE10261571B4 (de) * 2001-12-28 2015-04-02 Samsung Electronics Co., Ltd. Halbleiterspeicherbauelement und Reparaturverfahren
JP3866588B2 (ja) * 2002-03-01 2007-01-10 エルピーダメモリ株式会社 半導体集積回路装置
KR100490084B1 (ko) * 2002-09-12 2005-05-17 삼성전자주식회사 효율적인 리던던시 구제율을 갖는 반도체 메모리 장치
JP4050690B2 (ja) * 2003-11-21 2008-02-20 株式会社東芝 半導体集積回路装置
EP1647992A1 (de) * 2004-10-14 2006-04-19 Infineon Technologies AG Speicherschaltung mit Ersatzspeicher für fehlerhafte Speicherzellen
KR100689706B1 (ko) * 2004-11-01 2007-03-08 삼성전자주식회사 반도체 메모리 장치의 리던던시 회로 및 리페어 방법
JP2006172660A (ja) * 2004-12-17 2006-06-29 Toshiba Corp 不揮発性半導体記憶装置
KR100716667B1 (ko) * 2005-04-29 2007-05-09 주식회사 하이닉스반도체 반도체 기억 소자의 리던던시 회로
US7221603B2 (en) * 2005-05-12 2007-05-22 Micron Technology, Inc. Defective block handling in a flash memory device
TW200921691A (en) * 2007-11-14 2009-05-16 Etron Technology Inc Method for controlling a dram
JP2012069605A (ja) 2010-09-21 2012-04-05 Toshiba Corp 不揮発性半導体記憶装置
WO2014046103A1 (ja) * 2012-09-21 2014-03-27 ピーエスフォー ルクスコ エスエイアールエル 二重救済検出回路を有する半導体装置
JP2014071932A (ja) * 2012-10-01 2014-04-21 Toppan Printing Co Ltd マルチチップメモリモジュール
US9007860B2 (en) * 2013-02-28 2015-04-14 Micron Technology, Inc. Sub-block disabling in 3D memory
US9230692B2 (en) * 2013-06-17 2016-01-05 Micron Technology, Inc. Apparatuses and methods for mapping memory addresses to redundant memory
US9153343B2 (en) * 2013-11-13 2015-10-06 Taiwan Semiconductor Manufacturing Co., Ltd. Memory device having RRAM-based non-volatile storage array
US10755799B1 (en) * 2019-04-15 2020-08-25 Micron Technology, Inc. Apparatuses and methods for fuse latch redundancy
CN115620772B (zh) * 2022-12-05 2023-05-09 浙江力积存储科技有限公司 访问字线的方法及字线解码电路结构

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4025640C2 (de) * 1990-02-16 1992-05-21 Mitsubishi Denki K.K., Tokio/Tokyo, Jp

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE59310168D1 (de) * 1993-02-19 2001-06-07 Infineon Technologies Ag Spalten-Redundanz-Schaltungsanordnung für einen Speicher
JPH06275098A (ja) * 1993-03-24 1994-09-30 Mitsubishi Electric Corp 半導体記憶装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4025640C2 (de) * 1990-02-16 1992-05-21 Mitsubishi Denki K.K., Tokio/Tokyo, Jp

Also Published As

Publication number Publication date
KR960030255A (ko) 1996-08-17
JPH08255498A (ja) 1996-10-01
KR0158484B1 (ko) 1999-02-01
US5699306A (en) 1997-12-16
DE19602814A1 (de) 1996-08-01
JP2732824B2 (ja) 1998-03-30

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8364 No opposition during term of opposition
R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee

Effective date: 20110802