DE112022000361T5 - Halbleiterbauelement - Google Patents

Halbleiterbauelement Download PDF

Info

Publication number
DE112022000361T5
DE112022000361T5 DE112022000361.8T DE112022000361T DE112022000361T5 DE 112022000361 T5 DE112022000361 T5 DE 112022000361T5 DE 112022000361 T DE112022000361 T DE 112022000361T DE 112022000361 T5 DE112022000361 T5 DE 112022000361T5
Authority
DE
Germany
Prior art keywords
region
semiconductor
substrate
thickness direction
semiconductor component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE112022000361.8T
Other languages
German (de)
English (en)
Inventor
Hiroyuki Tajiri
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Publication of DE112022000361T5 publication Critical patent/DE112022000361T5/de
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/421—Shapes or dispositions
    • H10W70/424—Cross-sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/421—Shapes or dispositions
    • H10W70/424—Cross-sectional shapes
    • H10W70/427—Bent parts
    • H10W70/429—Bent parts being the outer leads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/464—Additional interconnections in combination with leadframes
    • H10W70/468—Circuit boards
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/811—Multiple chips on leadframes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/121—Arrangements for protection of devices protecting against mechanical damage
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07351—Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting
    • H10W72/07355—Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting changes in materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07541—Controlling the environment, e.g. atmosphere composition or temperature
    • H10W72/07552—Controlling the environment, e.g. atmosphere composition or temperature changes in structures or sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/352—Materials of die-attach connectors comprising metals or metalloids, e.g. solders
    • H10W72/3528—Intermetallic compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/521—Structures or relative sizes of bond wires
    • H10W72/527—Multiple bond wires having different sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5449—Dispositions of bond wires not being orthogonal to a side surface of the chip, e.g. fan-out arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/926—Multiple bond pads having different sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/944—Dispositions of multiple bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/753—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/755—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a laterally-adjacent insulating package substrate, interpose or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
DE112022000361.8T 2021-02-03 2022-01-20 Halbleiterbauelement Pending DE112022000361T5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021-015729 2021-02-03
JP2021015729 2021-02-03
PCT/JP2022/001961 WO2022168618A1 (ja) 2021-02-03 2022-01-20 半導体装置

Publications (1)

Publication Number Publication Date
DE112022000361T5 true DE112022000361T5 (de) 2023-10-12

Family

ID=82741446

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112022000361.8T Pending DE112022000361T5 (de) 2021-02-03 2022-01-20 Halbleiterbauelement

Country Status (5)

Country Link
US (1) US20240071875A1 (https=)
JP (1) JPWO2022168618A1 (https=)
CN (1) CN116686086A (https=)
DE (1) DE112022000361T5 (https=)
WO (1) WO2022168618A1 (https=)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009158787A (ja) 2007-12-27 2009-07-16 Mitsubishi Electric Corp 電力半導体装置

Family Cites Families (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2670208B2 (ja) * 1992-04-27 1997-10-29 京セラ株式会社 半導体素子収納用パッケージ
JP3617574B2 (ja) * 1996-05-22 2005-02-09 株式会社ルネサステクノロジ 多連多列リードフレームおよびそれを用いる半導体装置の製造方法
JP2002314030A (ja) * 2001-04-12 2002-10-25 Mitsubishi Electric Corp 半導体装置
JP4190250B2 (ja) * 2002-10-24 2008-12-03 株式会社ルネサステクノロジ 半導体装置
JP2004349397A (ja) * 2003-05-21 2004-12-09 Sharp Corp 半導体装置およびそれに用いられるリードフレーム
JP4426955B2 (ja) * 2004-11-30 2010-03-03 株式会社ルネサステクノロジ 半導体装置
JP4705881B2 (ja) * 2006-05-09 2011-06-22 パナソニック株式会社 リードフレーム及びそれを用いた半導体装置
US7683477B2 (en) * 2007-06-26 2010-03-23 Infineon Technologies Ag Semiconductor device including semiconductor chips having contact elements
US8030743B2 (en) * 2008-01-07 2011-10-04 Fairchild Semiconductor Corporation Semiconductor package with an embedded printed circuit board and stacked die
JP3146231U (ja) * 2008-08-28 2008-11-06 サンケン電気株式会社 リードフレームおよび半導体装置
JP4634498B2 (ja) * 2008-11-28 2011-02-16 三菱電機株式会社 電力用半導体モジュール
JP5793995B2 (ja) * 2011-06-28 2015-10-14 トヨタ自動車株式会社 リードフレーム、及び、パワーモジュール
JP2013258387A (ja) * 2012-05-15 2013-12-26 Rohm Co Ltd パワーモジュール半導体装置
JP2014207430A (ja) * 2013-03-21 2014-10-30 ローム株式会社 半導体装置
JP2014216459A (ja) * 2013-04-25 2014-11-17 三菱電機株式会社 半導体装置
DE112014002405T5 (de) * 2013-05-16 2016-05-19 Fuji Electric Co., Ltd Halbleitervorrichtung
JP6081903B2 (ja) * 2013-11-29 2017-02-15 サンケン電気株式会社 半導体装置
JP2015220429A (ja) * 2014-05-21 2015-12-07 ローム株式会社 半導体装置
FR3025691B1 (fr) * 2014-09-08 2016-10-07 Schneider Electric Ind Sas Module electronique haute puissance et procede de fabrication d'un tel module
JP6263108B2 (ja) * 2014-09-11 2018-01-17 株式会社日立製作所 半導体装置、並びにそれを用いたオルタネータ及び電力変換装置
JP6333693B2 (ja) * 2014-09-30 2018-05-30 ルネサスエレクトロニクス株式会社 半導体装置
KR102178865B1 (ko) * 2015-02-25 2020-11-18 한국전자통신연구원 고속 스위칭 성능을 갖는 캐스코드 타입의 스위치 회로
US9972569B2 (en) * 2016-04-12 2018-05-15 General Electric Company Robust low inductance power module package
JP6832094B2 (ja) * 2016-08-05 2021-02-24 ローム株式会社 パワーモジュール及びモータ駆動回路
JP6689708B2 (ja) * 2016-08-10 2020-04-28 ルネサスエレクトロニクス株式会社 電子装置
DE102016119485A1 (de) * 2016-10-12 2018-04-12 Infineon Technologies Ag Chipträger mit elektrisch leitfähiger Schicht, die sich über eine wärmeleitfähige dielektrische Sheet-Struktur hinaus erstreckt
US10600727B2 (en) * 2016-10-16 2020-03-24 Alpha And Omega Semiconductor (Cayman) Ltd. Molded intelligent power module for motors
JP6853435B2 (ja) * 2017-01-17 2021-03-31 三菱マテリアル株式会社 パワーモジュールの製造方法
JP2018170362A (ja) * 2017-03-29 2018-11-01 株式会社東芝 半導体モジュール
WO2018235329A1 (ja) * 2017-06-20 2018-12-27 住友電気工業株式会社 半導体装置
JP2019012767A (ja) * 2017-06-30 2019-01-24 ルネサスエレクトロニクス株式会社 半導体モジュールの製造方法および半導体モジュール
EP3499560B1 (en) * 2017-12-15 2021-08-18 Infineon Technologies AG Semiconductor module and method for producing the same
US10347571B1 (en) * 2018-01-09 2019-07-09 Macom Technology Solutions Holdings, Inc. Intra-package interference isolation
US10896869B2 (en) * 2018-01-12 2021-01-19 Amkor Technology Singapore Holding Pte. Ltd. Method of manufacturing a semiconductor device
CN111602240B (zh) * 2018-03-02 2023-08-01 新电元工业株式会社 树脂封装型半导体装置
JP6897869B2 (ja) * 2018-04-18 2021-07-07 三菱電機株式会社 半導体モジュール
JP7001826B2 (ja) * 2018-07-12 2022-01-20 ローム株式会社 半導体装置
JP7077893B2 (ja) * 2018-09-21 2022-05-31 株式会社デンソー 半導体装置
CN118213346A (zh) * 2018-10-24 2024-06-18 罗姆股份有限公司 半导体装置
JP7045975B2 (ja) * 2018-11-20 2022-04-01 三菱電機株式会社 半導体装置およびその製造方法、ならびに電力変換装置
JP6997340B2 (ja) * 2018-11-26 2022-01-17 三菱電機株式会社 半導体パッケージ、その製造方法、及び、半導体装置
JP2020102523A (ja) * 2018-12-21 2020-07-02 トヨタ自動車株式会社 半導体モジュール製造方法
JP7170614B2 (ja) * 2019-09-18 2022-11-14 株式会社東芝 半導体装置
JP7358921B2 (ja) * 2019-11-08 2023-10-11 富士電機株式会社 半導体モジュール及び半導体モジュールの製造方法
KR102703392B1 (ko) * 2019-11-25 2024-09-04 현대자동차주식회사 전력모듈 및 전력모듈에 적용되는 기판 구조
JP7729024B2 (ja) * 2020-03-12 2025-08-26 富士電機株式会社 半導体装置の製造方法及び半導体装置
JP7332528B2 (ja) * 2020-04-17 2023-08-23 三菱電機株式会社 半導体装置および半導体装置の製造方法
CN115380378A (zh) * 2020-04-17 2022-11-22 罗姆股份有限公司 半导体装置
CN115552602A (zh) * 2020-04-22 2022-12-30 罗姆股份有限公司 半导体装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009158787A (ja) 2007-12-27 2009-07-16 Mitsubishi Electric Corp 電力半導体装置

Also Published As

Publication number Publication date
CN116686086A (zh) 2023-09-01
US20240071875A1 (en) 2024-02-29
WO2022168618A1 (ja) 2022-08-11
JPWO2022168618A1 (https=) 2022-08-11

Similar Documents

Publication Publication Date Title
DE102014118836B4 (de) Halbleiter-packaging-anordnung und halbleiter-package
DE102013208818A1 (de) Zuverlässige Bereichsverbindungsstellen für Leistungshalbleiter
DE112020003763T5 (de) Halbleiterbauteil
DE112023001614T5 (de) Halbleitervorrichtung
DE212020000458U1 (de) Halbleiterbauteil
DE112021000605T5 (de) Halbleiterbauteil
DE112021001391T5 (de) Halbleiterbauelement und verfahren zur herstellung eines halbleiterbauelements
DE112023000690T5 (de) Halbleitervorrichtung und halbleitermodul
DE102020109692A1 (de) Quad-gehäuse mit an anschlüssen an der oberseite eines halbleiterchips angebrachten leitenden clips
DE112023000851T5 (de) Halbleitervorrichtung
DE212021000231U1 (de) Halbleiterbauteil
DE112018002152B4 (de) Halbleiterbauelement
DE112023004327T5 (de) Halbleitermodul
DE102005039165A1 (de) Halbleiterleistungsbauteil mit vertikalem Strompfad durch einen Halbleiterleistungschip und Verfahren zu dessen Herstellung
DE112022004864T5 (de) Halbleitermodul und halbleiterbauteil
DE112022005176T5 (de) Halbleiterbauteil
DE112022005438T5 (de) Halbleiterbauteil und Verfahren zur Herstellung des Halbleiterbauteils
DE112022002552T5 (de) Halbleitervorrichtung
DE112021001878T5 (de) Halbleiterbauteil
DE112022000361T5 (de) Halbleiterbauelement
DE112023000813T5 (de) Halbleitervorrichtung
DE102007002807B4 (de) Chipanordnung
DE102023135840A1 (de) Halbleiterbauelement mit einem träger, einem halbleiterdie und einem c-förmigen clip, der zwischen ihnen verbunden ist
DE112022000183T5 (de) Halbleiterbauelement
DE112022005210T5 (de) Halbleiterbauteil

Legal Events

Date Code Title Description
R012 Request for examination validly filed
R079 Amendment of ipc main class

Free format text: PREVIOUS MAIN CLASS: H01L0023495000

Ipc: H10W0070400000