DE112020006320T5 - Quarzglastiegel und herstellungsverfahren dafür - Google Patents
Quarzglastiegel und herstellungsverfahren dafür Download PDFInfo
- Publication number
- DE112020006320T5 DE112020006320T5 DE112020006320.8T DE112020006320T DE112020006320T5 DE 112020006320 T5 DE112020006320 T5 DE 112020006320T5 DE 112020006320 T DE112020006320 T DE 112020006320T DE 112020006320 T5 DE112020006320 T5 DE 112020006320T5
- Authority
- DE
- Germany
- Prior art keywords
- quartz glass
- crucible
- total concentration
- glass crucible
- less
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 238000000034 method Methods 0.000 title description 28
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 174
- 238000009826 distribution Methods 0.000 claims abstract description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 31
- 239000010453 quartz Substances 0.000 claims description 30
- 239000000843 powder Substances 0.000 claims description 27
- 239000002994 raw material Substances 0.000 claims description 26
- 238000005406 washing Methods 0.000 claims description 25
- 238000002844 melting Methods 0.000 claims description 23
- 230000008018 melting Effects 0.000 claims description 23
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 12
- 239000007788 liquid Substances 0.000 claims description 5
- 239000013078 crystal Substances 0.000 abstract description 90
- 229910052710 silicon Inorganic materials 0.000 abstract description 72
- 239000010703 silicon Substances 0.000 abstract description 72
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 71
- 239000010410 layer Substances 0.000 description 88
- 239000002344 surface layer Substances 0.000 description 65
- 239000012535 impurity Substances 0.000 description 28
- 230000012010 growth Effects 0.000 description 15
- 238000004090 dissolution Methods 0.000 description 14
- 230000002829 reductive effect Effects 0.000 description 14
- 230000008569 process Effects 0.000 description 13
- 230000008859 change Effects 0.000 description 8
- 238000005520 cutting process Methods 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 229910052906 cristobalite Inorganic materials 0.000 description 5
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 238000001175 rotational moulding Methods 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000000005 dynamic secondary ion mass spectrometry Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000000155 melt Substances 0.000 description 3
- 239000011800 void material Substances 0.000 description 3
- 238000004018 waxing Methods 0.000 description 3
- 238000005299 abrasion Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000005350 fused silica glass Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- BUHVIAUBTBOHAG-FOYDDCNASA-N (2r,3r,4s,5r)-2-[6-[[2-(3,5-dimethoxyphenyl)-2-(2-methylphenyl)ethyl]amino]purin-9-yl]-5-(hydroxymethyl)oxolane-3,4-diol Chemical compound COC1=CC(OC)=CC(C(CNC=2C=3N=CN(C=3N=CN=2)[C@H]2[C@@H]([C@H](O)[C@@H](CO)O2)O)C=2C(=CC=CC=2)C)=C1 BUHVIAUBTBOHAG-FOYDDCNASA-N 0.000 description 1
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 206010067482 No adverse event Diseases 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000003698 anagen phase Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 230000009172 bursting Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 238000010828 elution Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 239000006060 molten glass Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- -1 silicon alkoxide Chemical class 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 229910021489 α-quartz Inorganic materials 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B19/00—Other methods of shaping glass
- C03B19/09—Other methods of shaping glass by fusing powdered glass in a shaping mould
- C03B19/095—Other methods of shaping glass by fusing powdered glass in a shaping mould by centrifuging, e.g. arc discharge in rotating mould
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B20/00—Processes specially adapted for the production of quartz or fused silica articles, not otherwise provided for
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/06—Glass compositions containing silica with more than 90% silica by weight, e.g. quartz
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B2201/00—Type of glass produced
- C03B2201/06—Doped silica-based glasses
- C03B2201/30—Doped silica-based glasses doped with metals, e.g. Ga, Sn, Sb, Pb or Bi
- C03B2201/50—Doped silica-based glasses doped with metals, e.g. Ga, Sn, Sb, Pb or Bi doped with alkali metals
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B2201/00—Type of glass produced
- C03B2201/06—Doped silica-based glasses
- C03B2201/30—Doped silica-based glasses doped with metals, e.g. Ga, Sn, Sb, Pb or Bi
- C03B2201/54—Doped silica-based glasses doped with metals, e.g. Ga, Sn, Sb, Pb or Bi doped with beryllium, magnesium or alkaline earth metals
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2201/00—Glass compositions
- C03C2201/06—Doped silica-based glasses
- C03C2201/30—Doped silica-based glasses containing metals
- C03C2201/50—Doped silica-based glasses containing metals containing alkali metals
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2201/00—Glass compositions
- C03C2201/06—Doped silica-based glasses
- C03C2201/30—Doped silica-based glasses containing metals
- C03C2201/54—Doped silica-based glasses containing metals containing beryllium, magnesium or alkaline earth metals
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P40/00—Technologies relating to the processing of minerals
- Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
- Y02P40/57—Improving the yield, e-g- reduction of reject rates
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Manufacturing & Machinery (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Glass Melting And Manufacturing (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019-231815 | 2019-12-23 | ||
| JP2019231815 | 2019-12-23 | ||
| PCT/JP2020/040832 WO2021131321A1 (ja) | 2019-12-23 | 2020-10-30 | 石英ガラスルツボ及びその製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE112020006320T5 true DE112020006320T5 (de) | 2022-10-06 |
Family
ID=76574082
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE112020006320.8T Pending DE112020006320T5 (de) | 2019-12-23 | 2020-10-30 | Quarzglastiegel und herstellungsverfahren dafür |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US12371812B2 (https=) |
| JP (1) | JP7400835B2 (https=) |
| KR (1) | KR102723301B1 (https=) |
| CN (1) | CN114846180B (https=) |
| DE (1) | DE112020006320T5 (https=) |
| TW (1) | TWI762073B (https=) |
| WO (1) | WO2021131321A1 (https=) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005306708A (ja) | 2004-03-26 | 2005-11-04 | Kuramoto Seisakusho Co Ltd | 石英ルツボ |
| JP2005320241A (ja) | 2003-05-01 | 2005-11-17 | Shinetsu Quartz Prod Co Ltd | シリコン単結晶引上げ用石英ガラスルツボ及びその製造方法 |
| JP2009161364A (ja) | 2007-12-28 | 2009-07-23 | Japan Siper Quarts Corp | 内面結晶化ルツボおよび該ルツボを用いた引上げ方法 |
| JP2012136400A (ja) | 2010-12-27 | 2012-07-19 | Covalent Materials Corp | シリコン単結晶引上げ用シリカガラスルツボ |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2840195B2 (ja) | 1994-05-31 | 1998-12-24 | 信越石英株式会社 | 単結晶引上用石英ガラスルツボの製造方法 |
| JP3552401B2 (ja) | 1996-03-22 | 2004-08-11 | 信越半導体株式会社 | ルツボの洗浄方法 |
| JPH1143392A (ja) * | 1997-07-24 | 1999-02-16 | Kusuwa Kuorutsu:Kk | 単結晶引き上げ用石英ガラスルツボの洗浄方法 |
| JP4437368B2 (ja) * | 2000-12-12 | 2010-03-24 | コバレントマテリアル株式会社 | シリコン単結晶引上げ用石英ガラスルツボの製造方法 |
| JP5072933B2 (ja) | 2008-10-31 | 2012-11-14 | ジャパンスーパークォーツ株式会社 | シリコン単結晶引き上げ用石英ガラスルツボ及びその製造方法並びにシリコン単結晶の製造方法 |
| JP2010280567A (ja) * | 2010-09-17 | 2010-12-16 | Covalent Materials Corp | シリカガラスルツボの製造方法 |
| JP5500689B2 (ja) * | 2010-12-03 | 2014-05-21 | 株式会社Ｓｕｍｃｏ | シリカガラスルツボ |
| JP5508251B2 (ja) | 2010-12-24 | 2014-05-28 | コバレントマテリアル株式会社 | シリコン単結晶引上げ用シリカガラスルツボの洗浄方法 |
| JP5543909B2 (ja) * | 2010-12-27 | 2014-07-09 | コバレントマテリアル株式会社 | シリカガラスルツボ |
| CN103502513A (zh) * | 2012-01-13 | 2014-01-08 | 信越石英株式会社 | 单晶硅提拉用二氧化硅容器及其制造方法 |
| JP6773121B2 (ja) * | 2016-09-23 | 2020-10-21 | 株式会社Sumco | 石英ガラスルツボ及びその製造方法並びに石英ガラスルツボを用いたシリコン単結晶の製造方法 |
| JP6885287B2 (ja) * | 2017-09-29 | 2021-06-09 | 株式会社Sumco | 石英ルツボの不純物分析方法 |
-
2020
- 2020-10-30 US US17/783,616 patent/US12371812B2/en active Active
- 2020-10-30 CN CN202080089556.6A patent/CN114846180B/zh active Active
- 2020-10-30 JP JP2021566875A patent/JP7400835B2/ja active Active
- 2020-10-30 WO PCT/JP2020/040832 patent/WO2021131321A1/ja not_active Ceased
- 2020-10-30 DE DE112020006320.8T patent/DE112020006320T5/de active Pending
- 2020-10-30 KR KR1020227022558A patent/KR102723301B1/ko active Active
- 2020-12-08 TW TW109143202A patent/TWI762073B/zh active
-
2025
- 2025-06-19 US US19/243,262 patent/US20250313985A1/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005320241A (ja) | 2003-05-01 | 2005-11-17 | Shinetsu Quartz Prod Co Ltd | シリコン単結晶引上げ用石英ガラスルツボ及びその製造方法 |
| JP2005306708A (ja) | 2004-03-26 | 2005-11-04 | Kuramoto Seisakusho Co Ltd | 石英ルツボ |
| JP2009161364A (ja) | 2007-12-28 | 2009-07-23 | Japan Siper Quarts Corp | 内面結晶化ルツボおよび該ルツボを用いた引上げ方法 |
| JP2012136400A (ja) | 2010-12-27 | 2012-07-19 | Covalent Materials Corp | シリコン単結晶引上げ用シリカガラスルツボ |
Also Published As
| Publication number | Publication date |
|---|---|
| US20230010489A1 (en) | 2023-01-12 |
| JPWO2021131321A1 (https=) | 2021-07-01 |
| US20250313985A1 (en) | 2025-10-09 |
| KR102723301B1 (ko) | 2024-10-31 |
| JP7400835B2 (ja) | 2023-12-19 |
| KR20220107274A (ko) | 2022-08-02 |
| TW202129089A (zh) | 2021-08-01 |
| CN114846180B (zh) | 2024-07-05 |
| US12371812B2 (en) | 2025-07-29 |
| TWI762073B (zh) | 2022-04-21 |
| CN114846180A (zh) | 2022-08-02 |
| WO2021131321A1 (ja) | 2021-07-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R012 | Request for examination validly filed | ||
| R016 | Response to examination communication |