DE112013000866B4 - Siliziumkarbid (SiC)-Halbleitervorrichtungen - Google Patents

Siliziumkarbid (SiC)-Halbleitervorrichtungen Download PDF

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Publication number
DE112013000866B4
DE112013000866B4 DE112013000866.1T DE112013000866T DE112013000866B4 DE 112013000866 B4 DE112013000866 B4 DE 112013000866B4 DE 112013000866 T DE112013000866 T DE 112013000866T DE 112013000866 B4 DE112013000866 B4 DE 112013000866B4
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Germany
Prior art keywords
semiconductor device
sic semiconductor
sic
layer
conductivity type
Prior art date
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DE112013000866.1T
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German (de)
English (en)
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DE112013000866T5 (de
Inventor
Lin Cheng
Anant Kumar Agarwal
Michael John O'Loughlin
Albert Augustus jun. Burk
John Williams Palmour
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Wolfspeed Inc
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Cree Inc
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Priority claimed from US13/366,658 external-priority patent/US9349797B2/en
Application filed by Cree Inc filed Critical Cree Inc
Publication of DE112013000866T5 publication Critical patent/DE112013000866T5/de
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/60—Gate-turn-off devices 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/192—Base regions of thyristors
    • H10D62/199—Anode base regions of thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide

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  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
DE112013000866.1T 2012-02-06 2013-02-05 Siliziumkarbid (SiC)-Halbleitervorrichtungen Active DE112013000866B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/366,658 2012-02-06
US13/366,658 US9349797B2 (en) 2011-05-16 2012-02-06 SiC devices with high blocking voltage terminated by a negative bevel
PCT/US2013/024740 WO2013119548A1 (en) 2012-02-06 2013-02-05 Sic devices with high blocking voltage terminated by a negative bevel

Publications (2)

Publication Number Publication Date
DE112013000866T5 DE112013000866T5 (de) 2014-10-23
DE112013000866B4 true DE112013000866B4 (de) 2019-09-19

Family

ID=47780185

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112013000866.1T Active DE112013000866B4 (de) 2012-02-06 2013-02-05 Siliziumkarbid (SiC)-Halbleitervorrichtungen

Country Status (4)

Country Link
JP (1) JP6335795B2 (enrdf_load_stackoverflow)
CH (1) CH707901B1 (enrdf_load_stackoverflow)
DE (1) DE112013000866B4 (enrdf_load_stackoverflow)
WO (1) WO2013119548A1 (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10103540B2 (en) * 2014-04-24 2018-10-16 General Electric Company Method and system for transient voltage suppression devices with active control
US9806157B2 (en) 2014-10-03 2017-10-31 General Electric Company Structure and method for transient voltage suppression devices with a two-region base
JP6483838B2 (ja) * 2015-08-21 2019-03-13 株式会社日立製作所 半導体基板、半導体基板の研削方法および半導体装置の製造方法
CN109830529A (zh) * 2019-01-31 2019-05-31 西安理工大学 一种提升开通速度的超高压碳化硅晶闸管及其制作方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004020706A1 (en) 2002-08-30 2004-03-11 Okmetic Oyj Lightly doped silicon carbide wafer and use thereof in high power devices
US20050082542A1 (en) 2003-10-16 2005-04-21 Sumakeris Joseph J. Methods of forming power semiconductor devices using boule-grown silicon carbide drift layers and power semiconductor devices formed thereby
US20070170436A1 (en) 2004-02-06 2007-07-26 Yoshitaka Sugawara High-withstand voltage wide-gap semiconductor device and power device
WO2011120979A1 (en) 2010-03-30 2011-10-06 Fairchild Semiconductor Corporation Semiconductor device and method of forming a structure in a target substrate for manufacturing a semiconductor device

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5967795A (en) * 1995-08-30 1999-10-19 Asea Brown Boveri Ab SiC semiconductor device comprising a pn junction with a voltage absorbing edge
JP4011848B2 (ja) * 2000-12-12 2007-11-21 関西電力株式会社 高耐電圧半導体装置
US7345310B2 (en) * 2005-12-22 2008-03-18 Cree, Inc. Silicon carbide bipolar junction transistors having a silicon carbide passivation layer on the base region thereof
US7372087B2 (en) * 2006-06-01 2008-05-13 Northrop Grumman Corporation Semiconductor structure for use in a static induction transistor having improved gate-to-drain breakdown voltage
JP5140347B2 (ja) * 2007-08-29 2013-02-06 株式会社日立製作所 バイポーラトランジスタ及びその製造方法
JP5358926B2 (ja) * 2007-11-01 2013-12-04 富士電機株式会社 炭化珪素トレンチｍｏｓ型半導体装置
US8097919B2 (en) * 2008-08-11 2012-01-17 Cree, Inc. Mesa termination structures for power semiconductor devices including mesa step buffers
US7759186B2 (en) * 2008-09-03 2010-07-20 The United States Of America As Represented By The Secretary Of The Navy Method for fabricating junction termination extension with formation of photosensitive dopant mask to control doping profile and lateral width for high-voltage electronic devices

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004020706A1 (en) 2002-08-30 2004-03-11 Okmetic Oyj Lightly doped silicon carbide wafer and use thereof in high power devices
US20050082542A1 (en) 2003-10-16 2005-04-21 Sumakeris Joseph J. Methods of forming power semiconductor devices using boule-grown silicon carbide drift layers and power semiconductor devices formed thereby
US20070170436A1 (en) 2004-02-06 2007-07-26 Yoshitaka Sugawara High-withstand voltage wide-gap semiconductor device and power device
WO2011120979A1 (en) 2010-03-30 2011-10-06 Fairchild Semiconductor Corporation Semiconductor device and method of forming a structure in a target substrate for manufacturing a semiconductor device

Also Published As

Publication number Publication date
CH707901B1 (de) 2017-09-15
DE112013000866T5 (de) 2014-10-23
WO2013119548A1 (en) 2013-08-15
JP2015510272A (ja) 2015-04-02
JP6335795B2 (ja) 2018-05-30

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Representative=s name: DEHNS GERMANY PARTNERSCHAFT MBB, DE

Representative=s name: DEHNSGERMANY PARTNERSCHAFT VON PATENTANWAELTEN, DE

R081 Change of applicant/patentee

Owner name: WOLFSPEED, INC., DURHAM, US

Free format text: FORMER OWNER: CREE, INC., DURHAM, N.C., US

R079 Amendment of ipc main class

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Ipc: H10D0062100000