CH707901B1 - SIC-Vorrichtung mit hoher Sperrspannung, abgeschlossen durch einen Abflachungskantenabschluss. - Google Patents
SIC-Vorrichtung mit hoher Sperrspannung, abgeschlossen durch einen Abflachungskantenabschluss. Download PDFInfo
- Publication number
- CH707901B1 CH707901B1 CH01183/14A CH11832014A CH707901B1 CH 707901 B1 CH707901 B1 CH 707901B1 CH 01183/14 A CH01183/14 A CH 01183/14A CH 11832014 A CH11832014 A CH 11832014A CH 707901 B1 CH707901 B1 CH 707901B1
- Authority
- CH
- Switzerland
- Prior art keywords
- semiconductor device
- edge termination
- resistance
- layer
- sic semiconductor
- Prior art date
Links
- 230000000903 blocking effect Effects 0.000 title description 25
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 61
- 239000004065 semiconductor Substances 0.000 claims abstract description 58
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 55
- 239000000758 substrate Substances 0.000 claims description 47
- 238000000034 method Methods 0.000 claims description 46
- 230000003647 oxidation Effects 0.000 claims description 22
- 238000007254 oxidation reaction Methods 0.000 claims description 22
- 238000005530 etching Methods 0.000 claims description 19
- 238000002347 injection Methods 0.000 claims description 16
- 239000007924 injection Substances 0.000 claims description 16
- 238000005259 measurement Methods 0.000 claims description 7
- 238000000137 annealing Methods 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 4
- 238000002513 implantation Methods 0.000 claims description 2
- 239000007943 implant Substances 0.000 claims 4
- 238000012986 modification Methods 0.000 claims 2
- 230000004048 modification Effects 0.000 claims 2
- 229910003465 moissanite Inorganic materials 0.000 claims 1
- 150000002500 ions Chemical class 0.000 description 17
- 230000007935 neutral effect Effects 0.000 description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 230000015556 catabolic process Effects 0.000 description 7
- 238000009826 distribution Methods 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 239000002800 charge carrier Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 238000013459 approach Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000005496 tempering Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
- H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/40—Vertical BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/60—Gate-turn-off devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
- H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/192—Base regions of thyristors
- H10D62/199—Anode base regions of thyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/393—Body regions of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/60—Impurity distributions or concentrations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
- H10D62/8325—Silicon carbide
Landscapes
- Thyristors (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/366,658 US9349797B2 (en) | 2011-05-16 | 2012-02-06 | SiC devices with high blocking voltage terminated by a negative bevel |
| PCT/US2013/024740 WO2013119548A1 (en) | 2012-02-06 | 2013-02-05 | Sic devices with high blocking voltage terminated by a negative bevel |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH707901B1 true CH707901B1 (de) | 2017-09-15 |
Family
ID=47780185
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH01183/14A CH707901B1 (de) | 2012-02-06 | 2013-02-05 | SIC-Vorrichtung mit hoher Sperrspannung, abgeschlossen durch einen Abflachungskantenabschluss. |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6335795B2 (enrdf_load_stackoverflow) |
| CH (1) | CH707901B1 (enrdf_load_stackoverflow) |
| DE (1) | DE112013000866B4 (enrdf_load_stackoverflow) |
| WO (1) | WO2013119548A1 (enrdf_load_stackoverflow) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10103540B2 (en) * | 2014-04-24 | 2018-10-16 | General Electric Company | Method and system for transient voltage suppression devices with active control |
| US9806157B2 (en) | 2014-10-03 | 2017-10-31 | General Electric Company | Structure and method for transient voltage suppression devices with a two-region base |
| JP6483838B2 (ja) * | 2015-08-21 | 2019-03-13 | 株式会社日立製作所 | 半導体基板、半導体基板の研削方法および半導体装置の製造方法 |
| CN109830529A (zh) * | 2019-01-31 | 2019-05-31 | 西安理工大学 | 一种提升开通速度的超高压碳化硅晶闸管及其制作方法 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5967795A (en) * | 1995-08-30 | 1999-10-19 | Asea Brown Boveri Ab | SiC semiconductor device comprising a pn junction with a voltage absorbing edge |
| JP4011848B2 (ja) * | 2000-12-12 | 2007-11-21 | 関西電力株式会社 | 高耐電圧半導体装置 |
| SE525574C2 (sv) | 2002-08-30 | 2005-03-15 | Okmetic Oyj | Lågdopat kiselkarbidsubstrat och användning därav i högspänningskomponenter |
| US6974720B2 (en) | 2003-10-16 | 2005-12-13 | Cree, Inc. | Methods of forming power semiconductor devices using boule-grown silicon carbide drift layers and power semiconductor devices formed thereby |
| JP4585772B2 (ja) | 2004-02-06 | 2010-11-24 | 関西電力株式会社 | 高耐圧ワイドギャップ半導体装置及び電力装置 |
| US7345310B2 (en) * | 2005-12-22 | 2008-03-18 | Cree, Inc. | Silicon carbide bipolar junction transistors having a silicon carbide passivation layer on the base region thereof |
| US7372087B2 (en) * | 2006-06-01 | 2008-05-13 | Northrop Grumman Corporation | Semiconductor structure for use in a static induction transistor having improved gate-to-drain breakdown voltage |
| JP5140347B2 (ja) * | 2007-08-29 | 2013-02-06 | 株式会社日立製作所 | バイポーラトランジスタ及びその製造方法 |
| JP5358926B2 (ja) * | 2007-11-01 | 2013-12-04 | 富士電機株式会社 | 炭化珪素トレンチｍｏｓ型半導体装置 |
| US8097919B2 (en) * | 2008-08-11 | 2012-01-17 | Cree, Inc. | Mesa termination structures for power semiconductor devices including mesa step buffers |
| US7759186B2 (en) * | 2008-09-03 | 2010-07-20 | The United States Of America As Represented By The Secretary Of The Navy | Method for fabricating junction termination extension with formation of photosensitive dopant mask to control doping profile and lateral width for high-voltage electronic devices |
| SE537101C2 (sv) | 2010-03-30 | 2015-01-07 | Fairchild Semiconductor | Halvledarkomponent och förfarande för utformning av en struktur i ett målsubstrat för tillverkning av en halvledarkomponent |
-
2013
- 2013-02-05 WO PCT/US2013/024740 patent/WO2013119548A1/en active Application Filing
- 2013-02-05 JP JP2014556614A patent/JP6335795B2/ja active Active
- 2013-02-05 CH CH01183/14A patent/CH707901B1/de unknown
- 2013-02-05 DE DE112013000866.1T patent/DE112013000866B4/de active Active
Also Published As
| Publication number | Publication date |
|---|---|
| DE112013000866T5 (de) | 2014-10-23 |
| WO2013119548A1 (en) | 2013-08-15 |
| JP2015510272A (ja) | 2015-04-02 |
| JP6335795B2 (ja) | 2018-05-30 |
| DE112013000866B4 (de) | 2019-09-19 |
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