DE112012002075T5 - Laterale Halbleitervorrichtung - Google Patents

Laterale Halbleitervorrichtung Download PDF

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Publication number
DE112012002075T5
DE112012002075T5 DE112012002075.8T DE112012002075T DE112012002075T5 DE 112012002075 T5 DE112012002075 T5 DE 112012002075T5 DE 112012002075 T DE112012002075 T DE 112012002075T DE 112012002075 T5 DE112012002075 T5 DE 112012002075T5
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DE
Germany
Prior art keywords
field plate
region
resistance field
semiconductor
semiconductor region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE112012002075.8T
Other languages
German (de)
English (en)
Inventor
Norihito Tokura
Satoshi Shiraki
Shigeki Takahashi
Youichi Ashida
Takashi Suzuki
Akira Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
Denso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denso Corp filed Critical Denso Corp
Publication of DE112012002075T5 publication Critical patent/DE112012002075T5/de
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/063—Reduced surface field [RESURF] pn-junction structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/404—Multiple field plate structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/405—Resistive arrangements, e.g. resistive or semi-insulating field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE112012002075.8T 2011-05-13 2012-05-10 Laterale Halbleitervorrichtung Withdrawn DE112012002075T5 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2011108485 2011-05-13
JPJP-2011-108485 2011-05-13
JPJP-2012-088455 2012-04-09
JP2012088455A JP5748353B2 (ja) 2011-05-13 2012-04-09 横型半導体装置
PCT/JP2012/003065 WO2012157223A1 (ja) 2011-05-13 2012-05-10 横型半導体装置

Publications (1)

Publication Number Publication Date
DE112012002075T5 true DE112012002075T5 (de) 2014-03-06

Family

ID=47176575

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112012002075.8T Withdrawn DE112012002075T5 (de) 2011-05-13 2012-05-10 Laterale Halbleitervorrichtung

Country Status (5)

Country Link
US (1) US9240445B2 (ja)
JP (1) JP5748353B2 (ja)
CN (1) CN103548147A (ja)
DE (1) DE112012002075T5 (ja)
WO (1) WO2012157223A1 (ja)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6134219B2 (ja) 2013-07-08 2017-05-24 ルネサスエレクトロニクス株式会社 半導体装置
JP6597269B2 (ja) * 2015-12-15 2019-10-30 富士電機株式会社 半導体装置
US10396167B2 (en) 2015-12-15 2019-08-27 Fuji Electric Co., Ltd. Semiconductor device
JP6649102B2 (ja) 2016-02-05 2020-02-19 ルネサスエレクトロニクス株式会社 半導体装置
JP6690336B2 (ja) 2016-03-18 2020-04-28 富士電機株式会社 半導体装置
JP6804379B2 (ja) * 2017-04-24 2020-12-23 三菱電機株式会社 半導体装置
JP6414861B2 (ja) * 2017-09-12 2018-10-31 ルネサスエレクトロニクス株式会社 半導体装置
JP6910907B2 (ja) 2017-09-25 2021-07-28 ルネサスエレクトロニクス株式会社 半導体装置
DE102017130213B4 (de) * 2017-12-15 2021-10-21 Infineon Technologies Ag Planarer feldeffekttransistor
JP7140349B2 (ja) * 2018-07-18 2022-09-21 株式会社東海理化電機製作所 半導体装置及びその製造方法
CN118335611A (zh) * 2024-01-09 2024-07-12 润新微电子(大连)有限公司 含可变电势多场板结构的器件及其制备方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5304836A (en) * 1992-05-04 1994-04-19 Xerox Corporation High voltage field effect transistor having a small ratio of channel width to channel length and method of manufacture
JP2940399B2 (ja) * 1994-05-31 1999-08-25 サンケン電気株式会社 半導体装置
JP3905981B2 (ja) 1998-06-30 2007-04-18 株式会社東芝 高耐圧半導体装置
JP4960540B2 (ja) * 1998-11-05 2012-06-27 富士電機株式会社 半導体装置
EP1032046A1 (en) 1999-02-01 2000-08-30 Fuji Electric Co., Ltd. Semiconductor device having a thin film field-shaping structure
US6525390B2 (en) * 2000-05-18 2003-02-25 Fuji Electric Co., Ltd. MIS semiconductor device with low on resistance and high breakdown voltage
JP4857458B2 (ja) * 2000-06-07 2012-01-18 富士電機株式会社 高耐圧半導体装置
JP2002133625A (ja) * 2000-10-24 2002-05-10 Mitsumi Electric Co Ltd ヘッド送り機構とそのバックラッシュ防止機構、およびアクチュエータアセンブリ
GB0107408D0 (en) * 2001-03-23 2001-05-16 Koninkl Philips Electronics Nv Field effect transistor structure and method of manufacture
JP4362679B2 (ja) * 2001-05-07 2009-11-11 サンケン電気株式会社 半導体装置
JP2005005443A (ja) 2003-06-11 2005-01-06 Toshiba Corp 高耐圧半導体装置
JP4757449B2 (ja) * 2004-01-29 2011-08-24 三菱電機株式会社 半導体装置
JP2007096006A (ja) * 2005-09-29 2007-04-12 Nippon Inter Electronics Corp ガードリングの製造方法および半導体装置
US8564105B2 (en) 2010-02-16 2013-10-22 Sansha Electric Manufacturing Co., Ltd. Pin diode

Also Published As

Publication number Publication date
JP5748353B2 (ja) 2015-07-15
CN103548147A (zh) 2014-01-29
JP2012256854A (ja) 2012-12-27
US9240445B2 (en) 2016-01-19
WO2012157223A1 (ja) 2012-11-22
US20140048911A1 (en) 2014-02-20

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R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee