DE112008001657T5 - Integriertes Leistungsbauelementgehäuse und Modul mit zweiseitiger Kühlung und Verfahren zur Herstellung - Google Patents

Integriertes Leistungsbauelementgehäuse und Modul mit zweiseitiger Kühlung und Verfahren zur Herstellung Download PDF

Info

Publication number
DE112008001657T5
DE112008001657T5 DE112008001657T DE112008001657T DE112008001657T5 DE 112008001657 T5 DE112008001657 T5 DE 112008001657T5 DE 112008001657 T DE112008001657 T DE 112008001657T DE 112008001657 T DE112008001657 T DE 112008001657T DE 112008001657 T5 DE112008001657 T5 DE 112008001657T5
Authority
DE
Germany
Prior art keywords
drain
module
transistor
clamping element
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE112008001657T
Other languages
German (de)
English (en)
Inventor
Jonathan A. Noquil
Ruben P. Madrid
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Semiconductor Corp filed Critical Fairchild Semiconductor Corp
Publication of DE112008001657T5 publication Critical patent/DE112008001657T5/de
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00Arrangements for thermal protection or thermal control
    • H10W40/70Fillings or auxiliary members in containers or in encapsulations for thermal protection or control
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00Arrangements for thermal protection or thermal control
    • H10W40/10Arrangements for heating
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40Leadframes
    • H10W70/421Shapes or dispositions
    • H10W70/424Cross-sectional shapes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40Leadframes
    • H10W70/464Additional interconnections in combination with leadframes
    • H10W70/466Tape carriers or flat leads
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40Leadframes
    • H10W70/481Leadframes for devices being provided for in groups H10D8/00 - H10D48/00
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/60Strap connectors, e.g. thick copper clips for grounding of power devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/811Multiple chips on leadframes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/073Connecting or disconnecting of die-attach connectors
    • H10W72/07331Connecting techniques
    • H10W72/07336Soldering or alloying
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/073Connecting or disconnecting of die-attach connectors
    • H10W72/07351Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting
    • H10W72/07353Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting changes in shapes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/076Connecting or disconnecting of strap connectors
    • H10W72/07631Techniques
    • H10W72/07636Soldering or alloying
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/076Connecting or disconnecting of strap connectors
    • H10W72/07651Connecting or disconnecting of strap connectors characterised by changes in properties of the strap connectors during connecting
    • H10W72/07653Connecting or disconnecting of strap connectors characterised by changes in properties of the strap connectors during connecting changes in shapes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/30Die-attach connectors
    • H10W72/331Shapes of die-attach connectors
    • H10W72/334Cross-sectional shape, i.e. in side view
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/541Dispositions of bond wires
    • H10W72/5449Dispositions of bond wires not being orthogonal to a side surface of the chip, e.g. fan-out arrangements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/60Strap connectors, e.g. thick copper clips for grounding of power devices
    • H10W72/651Materials of strap connectors
    • H10W72/652Materials of strap connectors comprising metals or metalloids, e.g. silver
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/874On different surfaces
    • H10W72/877Bump connectors and die-attach connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/874On different surfaces
    • H10W72/881Bump connectors and strap connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/931Shapes of bond pads
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/931Shapes of bond pads
    • H10W72/932Plan-view shape, i.e. in top view
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/726Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/761Package configurations characterised by the relative positions of pads or connectors relative to package parts of strap connectors
    • H10W90/766Package configurations characterised by the relative positions of pads or connectors relative to package parts of strap connectors between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Lead Frames For Integrated Circuits (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
DE112008001657T 2007-07-27 2008-07-21 Integriertes Leistungsbauelementgehäuse und Modul mit zweiseitiger Kühlung und Verfahren zur Herstellung Withdrawn DE112008001657T5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/829,793 2007-07-27
US11/829,793 US7663211B2 (en) 2006-05-19 2007-07-27 Dual side cooling integrated power device package and module with a clip attached to a leadframe in the package and the module and methods of manufacture
PCT/US2008/070611 WO2009017999A2 (en) 2007-07-27 2008-07-21 Dual side cooling integrated power device package and module and methods of manufacture

Publications (1)

Publication Number Publication Date
DE112008001657T5 true DE112008001657T5 (de) 2010-06-10

Family

ID=40316927

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112008001657T Withdrawn DE112008001657T5 (de) 2007-07-27 2008-07-21 Integriertes Leistungsbauelementgehäuse und Modul mit zweiseitiger Kühlung und Verfahren zur Herstellung

Country Status (8)

Country Link
US (1) US7663211B2 (enExample)
JP (1) JP2010534937A (enExample)
KR (1) KR101324905B1 (enExample)
CN (2) CN101681897B (enExample)
DE (1) DE112008001657T5 (enExample)
MY (1) MY149499A (enExample)
TW (1) TWI450373B (enExample)
WO (1) WO2009017999A2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9698086B2 (en) 2012-07-05 2017-07-04 Infineon Technologies Ag Chip package and method of manufacturing the same
DE102020214912A1 (de) 2020-11-27 2022-06-02 Robert Bosch Gesellschaft mit beschränkter Haftung Schaltvorrichtung, elektrischer Energiespeicher, Vorrichtung und Verfahren zum Herstellen einer Schaltvorrichtung

Families Citing this family (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7663211B2 (en) 2006-05-19 2010-02-16 Fairchild Semiconductor Corporation Dual side cooling integrated power device package and module with a clip attached to a leadframe in the package and the module and methods of manufacture
US7800219B2 (en) * 2008-01-02 2010-09-21 Fairchild Semiconductor Corporation High-power semiconductor die packages with integrated heat-sink capability and methods of manufacturing the same
US8063472B2 (en) * 2008-01-28 2011-11-22 Fairchild Semiconductor Corporation Semiconductor package with stacked dice for a buck converter
US8193618B2 (en) * 2008-12-12 2012-06-05 Fairchild Semiconductor Corporation Semiconductor die package with clip interconnection
US7816784B2 (en) * 2008-12-17 2010-10-19 Fairchild Semiconductor Corporation Power quad flat no-lead semiconductor die packages with isolated heat sink for high-voltage, high-power applications, systems using the same, and methods of making the same
US8049312B2 (en) * 2009-01-12 2011-11-01 Texas Instruments Incorporated Semiconductor device package and method of assembly thereof
US8278756B2 (en) * 2010-02-24 2012-10-02 Inpaq Technology Co., Ltd. Single chip semiconductor coating structure and manufacturing method thereof
TWI427717B (zh) * 2010-12-28 2014-02-21 萬國半導體開曼股份有限公司 一種倒裝晶片的封裝方法
US8344464B2 (en) 2011-05-19 2013-01-01 International Rectifier Corporation Multi-transistor exposed conductive clip for high power semiconductor packages
US9717146B2 (en) 2012-05-22 2017-07-25 Intersil Americas LLC Circuit module such as a high-density lead frame array (HDA) power module, and method of making same
US9478484B2 (en) 2012-10-19 2016-10-25 Infineon Technologies Austria Ag Semiconductor packages and methods of formation thereof
US8963303B2 (en) 2013-02-22 2015-02-24 Stmicroelectronics S.R.L. Power electronic device
US9070721B2 (en) * 2013-03-15 2015-06-30 Semiconductor Components Industries, Llc Semiconductor devices and methods of making the same
JP6147588B2 (ja) * 2013-07-01 2017-06-14 ルネサスエレクトロニクス株式会社 半導体装置
US9536800B2 (en) 2013-12-07 2017-01-03 Fairchild Semiconductor Corporation Packaged semiconductor devices and methods of manufacturing
US9355942B2 (en) 2014-05-15 2016-05-31 Texas Instruments Incorporated Gang clips having distributed-function tie bars
US9673097B2 (en) 2015-05-11 2017-06-06 Texas Instruments Incorporated Integrated clip and lead and method of making a circuit
CN106601694B (zh) * 2015-10-16 2020-09-15 台达电子工业股份有限公司 堆叠结构及其制造方法
US9496208B1 (en) * 2016-02-25 2016-11-15 Texas Instruments Incorporated Semiconductor device having compliant and crack-arresting interconnect structure
DE102016107792B4 (de) 2016-04-27 2022-01-27 Infineon Technologies Ag Packung und halbfertiges Produkt mit vertikaler Verbindung zwischen Träger und Klammer sowie Verfahren zum Herstellen einer Packung und einer Charge von Packungen
US10189535B1 (en) * 2016-10-12 2019-01-29 Arnott T&P Holding, Llc Motorcycle display unit system and method
DE102016220553A1 (de) * 2016-10-20 2018-04-26 Robert Bosch Gmbh Leistungsmodul
KR102213604B1 (ko) 2017-02-15 2021-02-05 매그나칩 반도체 유한회사 반도체 패키지 장치
US10121742B2 (en) * 2017-03-15 2018-11-06 Amkor Technology, Inc. Method of forming a packaged semiconductor device using ganged conductive connective assembly and structure
US10727151B2 (en) * 2017-05-25 2020-07-28 Infineon Technologies Ag Semiconductor chip package having a cooling surface and method of manufacturing a semiconductor package
KR102153159B1 (ko) 2017-06-12 2020-09-08 매그나칩 반도체 유한회사 전력 반도체의 멀티칩 패키지
US10319670B2 (en) 2017-10-20 2019-06-11 Semiconductor Components Industries, Llc Package including multiple semiconductor devices
KR20190071111A (ko) * 2017-12-14 2019-06-24 삼성전자주식회사 엑스선 검사 장비 및 이를 이용하는 반도체 장치 제조 방법
US10916931B2 (en) * 2018-01-15 2021-02-09 Infineon Technologies Ag Temperature sensing and fault detection for paralleled double-side cooled power modules
US10553517B2 (en) 2018-01-18 2020-02-04 Semiconductor Components Industries, Llc High power module semiconductor package with multiple submodules
US10438877B1 (en) 2018-03-13 2019-10-08 Semiconductor Components Industries, Llc Multi-chip packages with stabilized die pads
CN108646159B (zh) * 2018-03-14 2020-06-16 北京工业大学 一种微型焊点热电耦合测试方法
US10665525B2 (en) 2018-05-01 2020-05-26 Semiconductor Components Industries, Llc Heat transfer for power modules
DE102019003027A1 (de) 2018-05-02 2019-11-07 Semiconductor Components Lndustries Llc Paketstrukturen für hochleistungsmodule
US11075137B2 (en) 2018-05-02 2021-07-27 Semiconductor Components Industries, Llc High power module package structures
US10991670B2 (en) 2018-09-28 2021-04-27 Semiconductor Components Industries, Llc Semiconductor device assemblies including spacer with embedded semiconductor die
US10872848B2 (en) * 2018-10-25 2020-12-22 Infineon Technologies Ag Semiconductor package with leadframe interconnection structure
DE102018130147A1 (de) 2018-11-28 2020-05-28 Infineon Technologies Ag Halbleitervorrichtung und verfahren zum herstellen einer halbleitervorrichtung
IT201800020998A1 (it) 2018-12-24 2020-06-24 St Microelectronics Srl Procedimento per fabbricare dispositivi a semiconduttore e dispositivo a semiconduttore corrispondente
US11222832B2 (en) 2019-02-11 2022-01-11 Semiconductor Components Industries, Llc Power semiconductor device package
US11515244B2 (en) 2019-02-21 2022-11-29 Infineon Technologies Ag Clip frame assembly, semiconductor package having a lead frame and a clip frame, and method of manufacture
US10964628B2 (en) * 2019-02-21 2021-03-30 Infineon Technologies Ag Clip frame assembly, semiconductor package having a lead frame and a clip frame, and method of manufacture
DE102020106492A1 (de) * 2019-04-12 2020-10-15 Infineon Technologies Ag Chip -package, verfahren zum bilden eines chip -packages, halbleitervorrichtung, halbleiteranordnung, dreiphasensystem, verfahren zum bilden einer halbleitervorrichtung und verfahren zum bilden einer halbleiteranordnung
US11121055B2 (en) * 2020-01-10 2021-09-14 Semiconductor Components Industries, Llc Leadframe spacer for double-sided power module
DE102020108916B4 (de) * 2020-03-31 2025-05-28 Infineon Technologies Ag Package mit Clip und Konnektor über elektronischen Komponenten
US12074160B2 (en) 2020-07-17 2024-08-27 Semiconductor Components Industries, Llc Isolated 3D semiconductor device package with transistors attached to opposing sides of leadframe sharing leads
CN115249694A (zh) * 2021-04-26 2022-10-28 上海凯虹科技电子有限公司 一种封装体
JP7241805B2 (ja) * 2021-05-24 2023-03-17 アオイ電子株式会社 半導体装置およびその製造方法
EP4270476A1 (en) * 2022-04-29 2023-11-01 Infineon Technologies Austria AG Semiconductor package and method for marking a semiconductor package
US12538810B2 (en) 2022-09-14 2026-01-27 Infineon Technologies Ag Molded package having an electrically conductive clip with a convex curved surface attached to a semiconductor die

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050167742A1 (en) 2001-01-30 2005-08-04 Fairchild Semiconductor Corp. Power semiconductor devices and methods of manufacture
US20050285238A1 (en) 2004-06-24 2005-12-29 Joshi Rajeev D Integrated transistor module and method of fabricating same
US20080023807A1 (en) 2006-05-19 2008-01-31 Noquil Jonathan A Dual side cooling integrated power device package and module and methods of manufacture

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4961106A (en) * 1987-03-27 1990-10-02 Olin Corporation Metal packages having improved thermal dissipation
US5796159A (en) * 1995-11-30 1998-08-18 Analog Devices, Inc. Thermally efficient integrated circuit package
JPH09326463A (ja) * 1996-05-09 1997-12-16 Oki Electric Ind Co Ltd 樹脂封止型半導体装置
US6740969B1 (en) * 1999-08-25 2004-05-25 Renesas Technology Corp. Electronic device
JP3639514B2 (ja) * 2000-09-04 2005-04-20 三洋電機株式会社 回路装置の製造方法
JP2002124596A (ja) * 2000-10-18 2002-04-26 Hitachi Ltd 半導体装置およびその製造方法
KR100421033B1 (ko) * 2000-11-22 2004-03-04 페어차일드코리아반도체 주식회사 열전달 효율이 높은 전력용 패키지
US6777800B2 (en) * 2002-09-30 2004-08-17 Fairchild Semiconductor Corporation Semiconductor die package including drain clip
TWI265611B (en) * 2003-03-11 2006-11-01 Siliconware Precision Industries Co Ltd Semiconductor package with heatsink
US6867481B2 (en) * 2003-04-11 2005-03-15 Fairchild Semiconductor Corporation Lead frame structure with aperture or groove for flip chip in a leaded molded package
JP2007066922A (ja) * 2003-11-28 2007-03-15 Renesas Technology Corp 半導体集積回路装置
US6917098B1 (en) * 2003-12-29 2005-07-12 Texas Instruments Incorporated Three-level leadframe for no-lead packages
JP2005217072A (ja) * 2004-01-28 2005-08-11 Renesas Technology Corp 半導体装置
WO2005122249A2 (en) * 2004-06-03 2005-12-22 International Rectifier Corporation Semiconductor device module with flip chip devices on a common lead frame
GB2431013B (en) 2004-07-23 2008-05-21 Electronic Bio Sciences Llc Method and apparatus for sensing a time varying current passing through an ion channel
JP2006073655A (ja) * 2004-08-31 2006-03-16 Toshiba Corp 半導体モジュール
US7298134B2 (en) 2004-10-12 2007-11-20 Elster Electricity, Llc Electrical-energy meter adaptable for optical communication with various external devices
JP4575955B2 (ja) * 2004-11-23 2010-11-04 シリコニックス インコーポレーテッド 半導体パッケージ及びその製造方法
US7394150B2 (en) * 2004-11-23 2008-07-01 Siliconix Incorporated Semiconductor package including die interposed between cup-shaped lead frame and lead frame having mesas and valleys
US7503695B2 (en) * 2004-12-01 2009-03-17 Anderson Dale A Device and method for holding open decoy bags
US7256479B2 (en) 2005-01-13 2007-08-14 Fairchild Semiconductor Corporation Method to manufacture a universal footprint for a package with exposed chip
US7476976B2 (en) * 2005-02-23 2009-01-13 Texas Instruments Incorporated Flip chip package with advanced electrical and thermal properties for high current designs
US7285849B2 (en) * 2005-11-18 2007-10-23 Fairchild Semiconductor Corporation Semiconductor die package using leadframe and clip and method of manufacturing
TW200739758A (en) * 2005-12-09 2007-10-16 Fairchild Semiconductor Corporaton Device and method for assembling a top and bottom exposed packaged semiconductor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050167742A1 (en) 2001-01-30 2005-08-04 Fairchild Semiconductor Corp. Power semiconductor devices and methods of manufacture
US20050285238A1 (en) 2004-06-24 2005-12-29 Joshi Rajeev D Integrated transistor module and method of fabricating same
US20080023807A1 (en) 2006-05-19 2008-01-31 Noquil Jonathan A Dual side cooling integrated power device package and module and methods of manufacture

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9698086B2 (en) 2012-07-05 2017-07-04 Infineon Technologies Ag Chip package and method of manufacturing the same
DE102013106936B4 (de) * 2012-07-05 2020-08-13 Infineon Technologies Ag Chip-Baustein und Verfahren zu seiner Herstellung
DE102020214912A1 (de) 2020-11-27 2022-06-02 Robert Bosch Gesellschaft mit beschränkter Haftung Schaltvorrichtung, elektrischer Energiespeicher, Vorrichtung und Verfahren zum Herstellen einer Schaltvorrichtung
WO2022112233A1 (de) 2020-11-27 2022-06-02 Robert Bosch Gmbh Schaltvorrichtung und verfahren zum herstellen einer schaltvorrichtung

Also Published As

Publication number Publication date
WO2009017999A3 (en) 2009-04-02
JP2010534937A (ja) 2010-11-11
MY149499A (en) 2013-09-13
CN107068641A (zh) 2017-08-18
CN101681897B (zh) 2017-04-12
US20080023807A1 (en) 2008-01-31
TWI450373B (zh) 2014-08-21
KR101324905B1 (ko) 2013-11-04
CN101681897A (zh) 2010-03-24
WO2009017999A2 (en) 2009-02-05
US7663211B2 (en) 2010-02-16
TW200913201A (en) 2009-03-16
KR20100039293A (ko) 2010-04-15

Similar Documents

Publication Publication Date Title
DE112008001657T5 (de) Integriertes Leistungsbauelementgehäuse und Modul mit zweiseitiger Kühlung und Verfahren zur Herstellung
DE102013015942B4 (de) Halbleiterbrückenschaltung und Verfahren zur Herstellung einer Halbleiterbrückenschaltung
DE102008051965B4 (de) Bauelement mit mehreren Halbleiterchips
DE102013103085B4 (de) Mehrfachchip-Leistungshalbleiterbauteil
DE102011053871B4 (de) Multichip-Halbleitergehäuse und deren Zusammenbau
AT504250A2 (de) Halbleiterchip-packung und verfahren zur herstellung derselben
DE102009042320B4 (de) Halbleiter-Anordnung mit einem Leistungshalbleiterchip, Halbbrückenschaltung und Verfahren zur Herstellung einer Halbleiter-Anordnung
DE102019130778B4 (de) Ein Package, welches ein Chip Kontaktelement aus zwei verschiedenen elektrisch leitfähigen Materialien aufweist, sowie ein Verfahren zum Herstellen eines Package
DE102008035911B4 (de) Verfahren zum Herstellen eines integrierten Schaltungsmoduls
DE10393232T5 (de) Halbleiterchipgehäuse mit Drain-Klemme
DE102015122259B4 (de) Halbleitervorrichtungen mit einer porösen Isolationsschicht
DE112009001315T5 (de) Vollbrückenmodul mit vier MOSFETs
DE102009056787A1 (de) Power Quad Flat No-Lead-Halbleiter-Chip-Packages mit isolierter Wärmesenke für Hochspannungs-, Hochleistungsanwendungen, Systeme zum Verwenden dieser und Verfahren zum Herstellen dieser
DE112007000994T5 (de) Halbleiterplättchengehäuse einschließlich mehrerer Plättchen und einer gemeinsamen Verbindungsstruktur
DE10393437T5 (de) Halbleiterbauelementbaugruppe
DE102011113269A1 (de) Halbleitermodul und Verfahren zu seiner Herstellung
DE112007001227T5 (de) Flip-Chip-MLP mit gefalteter Wärmesenke
DE102009016649A1 (de) Halbleitervorrichtung und Verfahren mit einem ersten und zweiten Träger
DE112007001992T5 (de) Halbleiterchip-Package mit gestapelten Chips und Wärmesenkenaufbauten
DE102014117953A1 (de) Halbleiterbauelement mit mehreren Halbleiterchips und einem Laminat
DE102018103979B4 (de) Baugruppe mit einer Trägereinrichtung mit einem Chip und einer Komponente, die durch eine Öffnung montiert ist, und Verfahren zur Herstellung und zur Verwendung
DE112023001614T5 (de) Halbleitervorrichtung
DE102022131219A1 (de) Halbleitergehäuse mit Metallpfosten aus strukturiertem Leadframe
DE102022132679A1 (de) Halbleitergehäuse-verbindungen und leistungsverbindungen durch metallisierte strukturen auf dem gehäusekörper
DE102021125094A1 (de) Halbleitergehäuse mit einem chip-träger mit einem pad-offset-merkmal

Legal Events

Date Code Title Description
R005 Application deemed withdrawn due to failure to request examination