DE10296913B4 - Segmentiertes Laserschneiden - Google Patents
Segmentiertes Laserschneiden Download PDFInfo
- Publication number
- DE10296913B4 DE10296913B4 DE10296913.2T DE10296913T DE10296913B4 DE 10296913 B4 DE10296913 B4 DE 10296913B4 DE 10296913 T DE10296913 T DE 10296913T DE 10296913 B4 DE10296913 B4 DE 10296913B4
- Authority
- DE
- Germany
- Prior art keywords
- laser
- segment
- cutting
- length
- cutting method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000003698 laser cutting Methods 0.000 title claims abstract description 80
- 238000005520 cutting process Methods 0.000 claims abstract description 218
- 238000000034 method Methods 0.000 claims abstract description 109
- 229910052710 silicon Inorganic materials 0.000 claims description 59
- 239000010703 silicon Substances 0.000 claims description 59
- 239000000463 material Substances 0.000 claims description 45
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- 239000002184 metal Substances 0.000 claims description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 230000036961 partial effect Effects 0.000 claims description 3
- 229920000642 polymer Polymers 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 229910004541 SiN Inorganic materials 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 230000003247 decreasing effect Effects 0.000 claims description 2
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- 229920002120 photoresistant polymer Polymers 0.000 claims description 2
- 229910010293 ceramic material Inorganic materials 0.000 claims 2
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- 239000003989 dielectric material Substances 0.000 claims 1
- 239000012212 insulator Substances 0.000 claims 1
- 238000012806 monitoring device Methods 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 58
- 235000012431 wafers Nutrition 0.000 description 54
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- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
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- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
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- 229910004261 CaF 2 Inorganic materials 0.000 description 1
- JJLJMEJHUUYSSY-UHFFFAOYSA-L Copper hydroxide Chemical compound [OH-].[OH-].[Cu+2] JJLJMEJHUUYSSY-UHFFFAOYSA-L 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
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- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
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- 238000000608 laser ablation Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/04—Automatically aligning, aiming or focusing the laser beam, e.g. using the back-scattered light
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/066—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/083—Devices involving movement of the workpiece in at least one axial direction
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/0869—Devices involving movement of the laser head in at least one axial direction
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
- B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Laser Beam Processing (AREA)
- Dicing (AREA)
- Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
- Laser Surgery Devices (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US29721801P | 2001-06-08 | 2001-06-08 | |
| US60/297,218 | 2001-06-08 | ||
| US10/017,497 | 2001-12-14 | ||
| US10/017,497 US7157038B2 (en) | 2000-09-20 | 2001-12-14 | Ultraviolet laser ablative patterning of microstructures in semiconductors |
| PCT/US2002/017908 WO2002100587A1 (en) | 2001-06-08 | 2002-06-07 | Laser segmented cutting |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE10296913T5 DE10296913T5 (de) | 2004-04-29 |
| DE10296913B4 true DE10296913B4 (de) | 2014-08-21 |
Family
ID=26689955
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE10296913.2T Expired - Fee Related DE10296913B4 (de) | 2001-06-08 | 2002-06-07 | Segmentiertes Laserschneiden |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US7157038B2 (enExample) |
| JP (1) | JP4551086B2 (enExample) |
| KR (1) | KR100877936B1 (enExample) |
| CN (2) | CN1788916B (enExample) |
| CA (1) | CA2449574A1 (enExample) |
| DE (1) | DE10296913B4 (enExample) |
| GB (1) | GB2391189B (enExample) |
| TW (1) | TW583045B (enExample) |
| WO (1) | WO2002100587A1 (enExample) |
Families Citing this family (112)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6255621B1 (en) | 2000-01-31 | 2001-07-03 | International Business Machines Corporation | Laser cutting method for forming magnetic recording head sliders |
| US6379604B1 (en) * | 2000-03-22 | 2002-04-30 | W. Inoac, Inc. | Laser ridge skin distortion reduction method |
| US7157038B2 (en) | 2000-09-20 | 2007-01-02 | Electro Scientific Industries, Inc. | Ultraviolet laser ablative patterning of microstructures in semiconductors |
| US6559411B2 (en) * | 2001-08-10 | 2003-05-06 | First Solar, Llc | Method and apparatus for laser scribing glass sheet substrate coatings |
| RU2226183C2 (ru) * | 2002-02-21 | 2004-03-27 | Алексеев Андрей Михайлович | Способ резки прозрачных неметаллических материалов |
| AU2003224098A1 (en) | 2002-04-19 | 2003-11-03 | Xsil Technology Limited | Laser machining |
| US6580054B1 (en) * | 2002-06-10 | 2003-06-17 | New Wave Research | Scribing sapphire substrates with a solid state UV laser |
| EP1547126A2 (en) * | 2002-08-05 | 2005-06-29 | The Research Foundation Of State University Of New York | System and method for manufacturing embedded conformal electronics |
| JP2006502006A (ja) | 2002-10-04 | 2006-01-19 | エレクトロ サイエンティフィック インダストリーズ インコーポレーテッド | 超小型部品用搬送具の弾性マスクに正確な寸法のスロットを形成する方法 |
| TWI248244B (en) * | 2003-02-19 | 2006-01-21 | J P Sercel Associates Inc | System and method for cutting using a variable astigmatic focal beam spot |
| US6949449B2 (en) * | 2003-07-11 | 2005-09-27 | Electro Scientific Industries, Inc. | Method of forming a scribe line on a ceramic substrate |
| JP2005101413A (ja) * | 2003-09-26 | 2005-04-14 | Disco Abrasive Syst Ltd | 薄板状被加工物の分割方法及び装置 |
| KR20050073855A (ko) * | 2004-01-12 | 2005-07-18 | 삼성전자주식회사 | 플렉셔블 디스플레이 및 그 제조 방법 |
| DE102004015326A1 (de) * | 2004-03-30 | 2005-10-20 | Leica Microsystems | Vorrichtung und Verfahren zur Inspektion eines Halbleiterbauteils |
| US6931991B1 (en) * | 2004-03-31 | 2005-08-23 | Matsushita Electric Industrial Co., Ltd. | System for and method of manufacturing gravure printing plates |
| US7302309B2 (en) * | 2004-04-26 | 2007-11-27 | Hewlett-Packard Development Company, L.P. | Laser micromachining methods and systems |
| US20060000814A1 (en) * | 2004-06-30 | 2006-01-05 | Bo Gu | Laser-based method and system for processing targeted surface material and article produced thereby |
| US20060016547A1 (en) * | 2004-07-22 | 2006-01-26 | Chien-Hua Chen | System and method for transferring structured material to a substrate |
| US7256871B2 (en) * | 2004-07-27 | 2007-08-14 | Asml Netherlands B.V. | Lithographic apparatus and method for calibrating the same |
| US20060114948A1 (en) * | 2004-11-29 | 2006-06-01 | Lo Ho W | Workpiece processing system using a common imaged optical assembly to shape the spatial distributions of light energy of multiple laser beams |
| KR100636852B1 (ko) * | 2005-03-22 | 2006-10-19 | (주)한빛레이저 | 모드라킹된 자외선 레이저를 이용한 유리기판의 스크라이빙방법 및 절단 방법 |
| US7611966B2 (en) * | 2005-05-05 | 2009-11-03 | Intel Corporation | Dual pulsed beam laser micromachining method |
| FR2887161B1 (fr) * | 2005-06-20 | 2007-09-07 | Commissariat Energie Atomique | Procede et dispositif d'ablation laser d'une couche superficielle d'une paroi, telle q'un revetement de peinture dans une installation nucleaire |
| TW200714379A (en) * | 2005-06-30 | 2007-04-16 | Fico Bv | Method and device for cleaning electronic components processed with a laser beam |
| US20100181706A1 (en) * | 2005-07-13 | 2010-07-22 | Jari Ruuttu | Radiation Arrangement |
| FI118937B (fi) * | 2005-07-13 | 2008-05-15 | Picodeon Ltd Oy | Diodipumppu |
| US7538296B2 (en) * | 2005-09-06 | 2009-05-26 | Pratt & Whitney Canada Corp. | High speed laser drilling machine and method |
| CN100482398C (zh) * | 2005-09-30 | 2009-04-29 | 富士迈半导体精密工业(上海)有限公司 | 激光切割装置与方法 |
| US7638731B2 (en) * | 2005-10-18 | 2009-12-29 | Electro Scientific Industries, Inc. | Real time target topography tracking during laser processing |
| CN1954954A (zh) * | 2005-10-27 | 2007-05-02 | 鸿富锦精密工业(深圳)有限公司 | 模具加工装置 |
| US8198566B2 (en) * | 2006-05-24 | 2012-06-12 | Electro Scientific Industries, Inc. | Laser processing of workpieces containing low-k dielectric material |
| US20070272666A1 (en) * | 2006-05-25 | 2007-11-29 | O'brien James N | Infrared laser wafer scribing using short pulses |
| US8624157B2 (en) * | 2006-05-25 | 2014-01-07 | Electro Scientific Industries, Inc. | Ultrashort laser pulse wafer scribing |
| US7494900B2 (en) * | 2006-05-25 | 2009-02-24 | Electro Scientific Industries, Inc. | Back side wafer dicing |
| US7807938B2 (en) * | 2006-06-22 | 2010-10-05 | Sabic Innovative Plastics Ip B.V. | Mastering tools and systems and methods for forming a plurality of cells on the mastering tools |
| JP2008068270A (ja) * | 2006-09-12 | 2008-03-27 | Disco Abrasive Syst Ltd | レーザー加工装置 |
| CN101522959B (zh) * | 2006-10-27 | 2013-10-23 | 长青太阳能股份有限公司 | 用于形成硅晶片的方法和设备 |
| US8338744B2 (en) | 2006-11-30 | 2012-12-25 | Sumitomo Electric Industries, Ltd. | Condensing optical system, laser processing method and apparatus, and manufacturing method of brittle material blank |
| JP4763583B2 (ja) * | 2006-11-30 | 2011-08-31 | 住友電気工業株式会社 | レーザ加工方法及び装置、脆性材料素材の製造方法並びにダイヤモンド素材の製造方法 |
| US8530784B2 (en) * | 2007-02-01 | 2013-09-10 | Orbotech Ltd. | Method and system of machining using a beam of photons |
| US7599048B2 (en) * | 2007-02-09 | 2009-10-06 | Wafermasters, Inc. | Optical emission spectroscopy process monitoring and material characterization |
| US8106329B2 (en) * | 2007-05-18 | 2012-01-31 | Gsi Group Corporation | Laser processing of conductive links |
| US20090013527A1 (en) * | 2007-07-11 | 2009-01-15 | International Business Machines Corporation | Collapsable connection mold repair method utilizing femtosecond laser pulse lengths |
| US20090061161A1 (en) * | 2007-08-27 | 2009-03-05 | Lynn Sheehan | Laser patterning of a cross-linked polymer |
| KR101516742B1 (ko) | 2007-09-19 | 2015-05-04 | 엘렉트로 사이언티픽 인더스트리즈 인코포레이티드 | 고속 빔 편향 링크 가공 |
| JP5061962B2 (ja) * | 2008-03-04 | 2012-10-31 | 住友電気工業株式会社 | レーザ加工方法及びレーザ加工装置 |
| GB2458475B (en) * | 2008-03-18 | 2011-10-26 | Xsil Technology Ltd | Processing of multilayer semiconductor wafers |
| US7982161B2 (en) * | 2008-03-24 | 2011-07-19 | Electro Scientific Industries, Inc. | Method and apparatus for laser drilling holes with tailored laser pulses |
| US8124911B2 (en) | 2008-03-31 | 2012-02-28 | Electro Scientific Industries, Inc. | On-the-fly manipulation of spot size and cutting speed for real-time control of trench depth and width in laser operations |
| US8173038B2 (en) * | 2008-04-18 | 2012-05-08 | Corning Incorporated | Methods and systems for forming microstructures in glass substrates |
| US8173931B2 (en) * | 2008-06-13 | 2012-05-08 | Electro Scientific Industries, Inc. | Automatic recipe management for laser processing a work piece |
| US20100062214A1 (en) * | 2008-09-05 | 2010-03-11 | Wo Andrew M | Method for drilling micro-hole and structure thereof |
| US20100078419A1 (en) * | 2008-09-26 | 2010-04-01 | Electro Scientific Industries, Inc | Post-lens steering of a laser beam for micro-machining applications |
| GB0900036D0 (en) * | 2009-01-03 | 2009-02-11 | M Solv Ltd | Method and apparatus for forming grooves with complex shape in the surface of apolymer |
| US8327666B2 (en) * | 2009-02-19 | 2012-12-11 | Corning Incorporated | Method of separating strengthened glass |
| US8341976B2 (en) | 2009-02-19 | 2013-01-01 | Corning Incorporated | Method of separating strengthened glass |
| US8187983B2 (en) | 2009-04-16 | 2012-05-29 | Micron Technology, Inc. | Methods for fabricating semiconductor components using thinning and back side laser processing |
| US8319146B2 (en) * | 2009-05-05 | 2012-11-27 | General Electric Company | Method and apparatus for laser cutting a trench |
| WO2011025908A1 (en) | 2009-08-28 | 2011-03-03 | Corning Incorporated | Methods for laser cutting articles from chemically strengthened glass substrates |
| US8987632B2 (en) * | 2009-10-09 | 2015-03-24 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Modification of surface energy via direct laser ablative surface patterning |
| JP5620669B2 (ja) * | 2009-10-26 | 2014-11-05 | 東芝機械株式会社 | レーザダイシング方法およびレーザダイシング装置 |
| US20130256286A1 (en) * | 2009-12-07 | 2013-10-03 | Ipg Microsystems Llc | Laser processing using an astigmatic elongated beam spot and using ultrashort pulses and/or longer wavelengths |
| JP5452247B2 (ja) * | 2010-01-21 | 2014-03-26 | 東芝機械株式会社 | レーザダイシング装置 |
| JP5981094B2 (ja) | 2010-06-24 | 2016-08-31 | 東芝機械株式会社 | ダイシング方法 |
| US20120012170A1 (en) * | 2010-07-19 | 2012-01-19 | Institutt For Energiteknikk | Processed silicon wafer, silicon chip, and method and apparatus for production thereof |
| EP2409808A1 (de) | 2010-07-22 | 2012-01-25 | Bystronic Laser AG | Laserbearbeitungsmaschine |
| DE102011108405A1 (de) * | 2011-07-23 | 2013-01-24 | Volkswagen Aktiengesellschaft | Verfahren und Vorrichtung zum Einbringen einer Schnittfuge in ein Werkstück |
| JP5140198B1 (ja) | 2011-07-27 | 2013-02-06 | 東芝機械株式会社 | レーザダイシング方法 |
| DE112012003162T5 (de) * | 2011-07-29 | 2014-04-17 | Ats Automation Tooling Systems Inc. | Systeme und Verfahren zum Herstellen dünner Siliziumstäbe |
| US10239160B2 (en) * | 2011-09-21 | 2019-03-26 | Coherent, Inc. | Systems and processes that singulate materials |
| TW201334118A (zh) * | 2011-11-16 | 2013-08-16 | Applied Materials Inc | 雷射劃線系統、設備及方法 |
| US9266192B2 (en) | 2012-05-29 | 2016-02-23 | Electro Scientific Industries, Inc. | Method and apparatus for processing workpieces |
| US9278374B2 (en) | 2012-06-08 | 2016-03-08 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Modified surface having low adhesion properties to mitigate insect residue adhesion |
| JP2014011358A (ja) | 2012-06-29 | 2014-01-20 | Toshiba Mach Co Ltd | レーザダイシング方法 |
| JP2014046331A (ja) * | 2012-08-30 | 2014-03-17 | Keyence Corp | レーザ加工装置及び切断加工パターン生成プログラム並びにコンピュータで読取可能な記録媒体 |
| TW201826611A (zh) * | 2012-10-25 | 2018-07-16 | 美商應用材料股份有限公司 | 繞射光學元件及用於圖案化薄膜電化學元件的方法 |
| JP6056564B2 (ja) * | 2013-03-08 | 2017-01-11 | 株式会社Ihi | セラミックマトリックス複合材の加工方法 |
| US9099481B2 (en) | 2013-03-15 | 2015-08-04 | Semiconductor Components Industries, Llc | Methods of laser marking semiconductor substrates |
| US20140318278A1 (en) * | 2013-04-24 | 2014-10-30 | Honeywell International Inc. | Particle imaging utilizing a filter |
| US9635908B2 (en) * | 2013-10-21 | 2017-05-02 | Nike, Inc. | Automated trimming of pliable items |
| EP2883647B1 (de) | 2013-12-12 | 2019-05-29 | Bystronic Laser AG | Verfahren zur Konfiguration einer Laserbearbeitungsvorrichtung |
| JP6488073B2 (ja) * | 2014-02-28 | 2019-03-20 | 株式会社日立ハイテクノロジーズ | ステージ装置およびそれを用いた荷電粒子線装置 |
| KR101881708B1 (ko) * | 2014-07-03 | 2018-07-24 | 신닛테츠스미킨 카부시키카이샤 | 레이저 가공 장치 |
| BR112016030575B1 (pt) * | 2014-07-03 | 2020-02-11 | Nippon Steel Corporation | Aparelho de processamento a laser |
| CN104353933B (zh) * | 2014-10-22 | 2017-05-31 | 信阳师范学院 | 光伏电池片的激光划片装置 |
| JP6553940B2 (ja) * | 2015-05-15 | 2019-07-31 | 株式会社ディスコ | レーザー加工装置 |
| EP3718676B1 (en) | 2015-07-28 | 2023-11-15 | Synova SA | Device and process of treating a workpiece using a liquid jet guided laser beam |
| KR20170087610A (ko) | 2016-01-21 | 2017-07-31 | 삼성전자주식회사 | 웨이퍼 절단 장치 |
| US10549386B2 (en) * | 2016-02-29 | 2020-02-04 | Xerox Corporation | Method for ablating openings in unsupported layers |
| FR3061052B1 (fr) * | 2016-12-28 | 2019-05-31 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede d'usinage par laser d'un diamant permettant d'obtenir une surface lisse et transparente |
| CA3055275A1 (en) * | 2017-03-03 | 2018-09-07 | Furukawa Electric Co., Ltd. | Welding method and welding apparatus |
| US20190151993A1 (en) * | 2017-11-22 | 2019-05-23 | Asm Technology Singapore Pte Ltd | Laser-cutting using selective polarization |
| JP6925945B2 (ja) * | 2017-11-30 | 2021-08-25 | 株式会社ディスコ | ウエーハの加工方法 |
| US10919794B2 (en) | 2017-12-04 | 2021-02-16 | General Atomics | Method of cutting glass using a laser |
| CN108789886B (zh) * | 2018-05-31 | 2019-11-15 | 中国科学院西安光学精密机械研究所 | 一种透明硬脆材料的切割裂片方法 |
| CN108943988A (zh) * | 2018-07-05 | 2018-12-07 | 英诺激光科技股份有限公司 | 一种激光剥离方法 |
| CN110695540A (zh) * | 2018-07-10 | 2020-01-17 | 青岛云路先进材料技术股份有限公司 | 一种非晶带材的激光切割方法 |
| US10615044B1 (en) * | 2018-10-18 | 2020-04-07 | Asm Technology Singapore Pte Ltd | Material cutting using laser pulses |
| DE102018132001A1 (de) * | 2018-12-12 | 2020-06-18 | Laser Imaging Systems Gmbh | Vorrichtung zum Belichten von plattenförmigen Werkstücken mit hohem Durchsatz |
| JP7218056B2 (ja) * | 2019-02-20 | 2023-02-06 | 株式会社ディスコ | チップ及び枠体の少なくともいずれかを製造する方法 |
| CN111375911A (zh) * | 2019-06-06 | 2020-07-07 | 济南邦德激光股份有限公司 | 一种自动切割板材方法 |
| JP7205413B2 (ja) * | 2019-08-07 | 2023-01-17 | 株式会社Sumco | レーザマーク付きシリコンウェーハの製造方法 |
| CN112756795B (zh) * | 2020-12-28 | 2022-12-30 | 深圳市凤翔光电电子有限公司 | 一种芯片硅晶圆激光刻蚀设备及芯片生产工艺 |
| CN112719639A (zh) * | 2021-01-12 | 2021-04-30 | 无锡烁邦智能设备制造有限公司 | 一种硅片切割机 |
| CN115229329A (zh) * | 2021-04-09 | 2022-10-25 | 大族激光科技产业集团股份有限公司 | 一种激光切割方法和激光切割系统 |
| CN113369712B (zh) * | 2021-06-23 | 2023-03-24 | 业成科技(成都)有限公司 | 镭射切割方法、装置及计算机可读存储介质 |
| CN113953685B (zh) * | 2021-11-22 | 2023-09-01 | 重庆工商大学 | 一种平面板材激光切割路径规划方法 |
| CN115677387A (zh) * | 2022-11-01 | 2023-02-03 | 赛创电气(铜陵)有限公司 | 陶瓷基板激光打孔产生的熔渣去除方法 |
| TWI829454B (zh) * | 2022-11-30 | 2024-01-11 | 迅得機械股份有限公司 | 基板處理系統 |
| CN116810187B (zh) * | 2023-08-31 | 2023-12-01 | 苏州天沐兴智能科技有限公司 | 一种晶圆激光切割方法、切割设备及可穿戴智能装置 |
| WO2025072250A1 (en) * | 2023-09-25 | 2025-04-03 | WU, Chunte Richard | Integrated circuit packages and packaging substrates and methods for manufacturing integrated circuit packages |
| CN120516790B (zh) * | 2025-07-24 | 2025-10-10 | 江西昌兴航空装备股份有限公司 | 一种碳纤维热塑性复合材料低损伤切割方法 |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57181787A (en) | 1981-04-30 | 1982-11-09 | Toshiba Corp | Laser working method |
| US5057664A (en) | 1989-10-20 | 1991-10-15 | Electro Scientific Industries, Inc. | Method and apparatus for laser processing a target material to provide a uniformly smooth, continuous trim profile |
| JPH06234090A (ja) | 1993-02-10 | 1994-08-23 | Mitsubishi Heavy Ind Ltd | 厚板ステンレス鋼のレーザー切断方法 |
| JPH06277861A (ja) | 1993-03-31 | 1994-10-04 | Hitachi Constr Mach Co Ltd | レーザ加工装置及びレーザ加工方法並びにリードフレームの加工方法 |
| US5593606A (en) | 1994-07-18 | 1997-01-14 | Electro Scientific Industries, Inc. | Ultraviolet laser system and method for forming vias in multi-layered targets |
| US5751585A (en) | 1995-03-20 | 1998-05-12 | Electro Scientific Industries, Inc. | High speed, high accuracy multi-stage tool positioning system |
| US5864430A (en) | 1996-09-10 | 1999-01-26 | Sandia Corporation | Gaussian beam profile shaping apparatus, method therefor and evaluation thereof |
| WO2000073013A1 (en) | 1999-05-28 | 2000-12-07 | Electro Scientific Industries, Inc. | Beam shaping and projection imaging with solid state uv gaussian beam to form vias |
| WO2001052004A1 (en) | 2000-01-11 | 2001-07-19 | Electro Scientific Industries, Inc. | Abbe error correction system and method |
| US20020033558A1 (en) | 2000-09-20 | 2002-03-21 | Fahey Kevin P. | UV laser cutting or shape modification of brittle, high melting temperature target materials such as ceramics or glasses |
| US20020149136A1 (en) | 2000-09-20 | 2002-10-17 | Baird Brian W. | Ultraviolet laser ablative patterning of microstructures in semiconductors |
Family Cites Families (44)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4169976A (en) * | 1976-02-27 | 1979-10-02 | Valfivre S.P.A. | Process for cutting or shaping of a substrate by laser |
| US4589190A (en) * | 1984-03-23 | 1986-05-20 | General Electric Company | Fabrication of drilled and diffused junction field-effect transistors |
| US4534804A (en) * | 1984-06-14 | 1985-08-13 | International Business Machines Corporation | Laser process for forming identically positioned alignment marks on the opposite sides of a semiconductor wafer |
| US4541035A (en) * | 1984-07-30 | 1985-09-10 | General Electric Company | Low loss, multilevel silicon circuit board |
| US4618380A (en) * | 1985-06-18 | 1986-10-21 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Method of fabricating an imaging X-ray spectrometer |
| JPS62234685A (ja) * | 1986-04-02 | 1987-10-14 | Mitsubishi Electric Corp | 加工材料の切断方法 |
| US4835361A (en) * | 1986-07-21 | 1989-05-30 | Magnetic Peripherals Inc. | Laser machining for producing very small parts |
| US5166493A (en) * | 1989-01-10 | 1992-11-24 | Canon Kabushiki Kaisha | Apparatus and method of boring using laser |
| JPH03180286A (ja) * | 1989-12-06 | 1991-08-06 | Fuji Electric Co Ltd | レーザ加工方法 |
| JP2621599B2 (ja) | 1990-07-05 | 1997-06-18 | 日本電気株式会社 | コンタクトホール形成装置及び方法 |
| EP0623957B1 (en) * | 1992-11-24 | 1999-02-03 | Hitachi Construction Machinery Co., Ltd. | Lead frame manufacturing method |
| JPH07132390A (ja) * | 1993-11-10 | 1995-05-23 | Niigata Eng Co Ltd | レーザ加工機における焦点位置とノズル位置の調節方法及び装置 |
| US6130009A (en) * | 1994-01-03 | 2000-10-10 | Litel Instruments | Apparatus and process for nozzle production utilizing computer generated holograms |
| US5589090A (en) * | 1994-01-31 | 1996-12-31 | Song; Byung-Jun | Laser cutting apparatus with means for measuring cutting groove width |
| US5611946A (en) * | 1994-02-18 | 1997-03-18 | New Wave Research | Multi-wavelength laser system, probe station and laser cutter system using the same |
| US5739048A (en) | 1994-05-23 | 1998-04-14 | International Business Machines Corporation | Method for forming rows of partially separated thin film elements |
| US5841099A (en) * | 1994-07-18 | 1998-11-24 | Electro Scientific Industries, Inc. | Method employing UV laser pulses of varied energy density to form depthwise self-limiting blind vias in multilayered targets |
| US5543365A (en) * | 1994-12-02 | 1996-08-06 | Texas Instruments Incorporated | Wafer scribe technique using laser by forming polysilicon |
| US5847960A (en) * | 1995-03-20 | 1998-12-08 | Electro Scientific Industries, Inc. | Multi-tool positioning system |
| US5843363A (en) * | 1995-03-31 | 1998-12-01 | Siemens Aktiengesellschaft | Ablation patterning of multi-layered structures |
| JP3159906B2 (ja) * | 1995-10-23 | 2001-04-23 | アルプス電気株式会社 | 液晶表示素子の製造方法 |
| DE19609199A1 (de) * | 1996-03-09 | 1997-09-11 | Vetter & Co Apotheker | Verfahren zur Bearbeitung von Werkstücken aus festen Materialien sowie Vorrichtung zur Durchführung des Verfahrens |
| DE69722673T2 (de) | 1996-03-25 | 2004-02-05 | Nippon Sheet Glass Co., Ltd. | Laserherstellungsverfahren für Glassubstrate und so hergestellte Mikrolinsenmatrizen |
| US6037565A (en) * | 1996-06-17 | 2000-03-14 | The Regents Of The University Of California | Laser illuminator and optical system for disk patterning |
| US5870421A (en) * | 1997-05-12 | 1999-02-09 | Dahm; Jonathan S. | Short pulsewidth, high pulse repetition frequency laser system |
| US5872684A (en) * | 1997-05-15 | 1999-02-16 | International Business Machines Corporation | Air bearing slider having a relieved trailing edge |
| US6001268A (en) * | 1997-06-05 | 1999-12-14 | International Business Machines Corporation | Reactive ion etching of alumina/TiC substrates |
| JPH11773A (ja) | 1997-06-11 | 1999-01-06 | Nec Corp | レーザ加工装置およびその方法 |
| US6027660A (en) * | 1997-06-23 | 2000-02-22 | International Business Machines Corproation | Method of etching ceramics of alumina/TiC with high density plasma |
| US5987725A (en) * | 1997-08-26 | 1999-11-23 | International Business Machines Corporation | Method for parting a slider from a slider row |
| US6069769A (en) * | 1997-09-30 | 2000-05-30 | International Business Machines Corporation | Air bearing slider having rounded corners |
| US6032997A (en) * | 1998-04-16 | 2000-03-07 | Excimer Laser Systems | Vacuum chuck |
| US6057180A (en) * | 1998-06-05 | 2000-05-02 | Electro Scientific Industries, Inc. | Method of severing electrically conductive links with ultraviolet laser output |
| US6063695A (en) * | 1998-11-16 | 2000-05-16 | Taiwan Semiconductor Manufacturing Company | Simplified process for the fabrication of deep clear laser marks using a photoresist mask |
| JP2000164535A (ja) | 1998-11-24 | 2000-06-16 | Mitsubishi Electric Corp | レーザ加工装置 |
| JP2000246477A (ja) * | 1999-03-02 | 2000-09-12 | Niigata Eng Co Ltd | レーザ加工機等の倣い装置 |
| US6294213B1 (en) * | 1999-04-21 | 2001-09-25 | Conagra Grocery Products Company | Method for reducing color migration in multi-layered, caramel colored, gel-based dessert products and the products so produced |
| US6420245B1 (en) * | 1999-06-08 | 2002-07-16 | Kulicke & Soffa Investments, Inc. | Method for singulating semiconductor wafers |
| US6288873B1 (en) * | 1999-10-18 | 2001-09-11 | International Business Machines Corporation | Curvature adjustment of sliders by scribing of slider suspension |
| US6255621B1 (en) * | 2000-01-31 | 2001-07-03 | International Business Machines Corporation | Laser cutting method for forming magnetic recording head sliders |
| US6423925B1 (en) * | 2000-02-17 | 2002-07-23 | Universal Laser Systems, Inc. | Apparatus and method for combining multiple laser beams in laser material processing systems |
| US6356337B1 (en) * | 2000-03-08 | 2002-03-12 | Anvik Corporation | Two-sided substrate imaging using single-approach projection optics |
| US6804086B2 (en) | 2000-04-27 | 2004-10-12 | Seagate Technology Llc | Unitary crystalline slider with edges rounded by laser ablation |
| US6376797B1 (en) * | 2000-07-26 | 2002-04-23 | Ase Americas, Inc. | Laser cutting of semiconductor materials |
-
2001
- 2001-12-14 US US10/017,497 patent/US7157038B2/en not_active Expired - Fee Related
-
2002
- 2002-06-07 KR KR1020037016002A patent/KR100877936B1/ko not_active Expired - Fee Related
- 2002-06-07 CA CA002449574A patent/CA2449574A1/en not_active Abandoned
- 2002-06-07 JP JP2003503392A patent/JP4551086B2/ja not_active Expired - Fee Related
- 2002-06-07 CN CN200510130176XA patent/CN1788916B/zh not_active Expired - Fee Related
- 2002-06-07 CN CNB028115287A patent/CN1240511C/zh not_active Expired - Fee Related
- 2002-06-07 GB GB0327679A patent/GB2391189B/en not_active Expired - Fee Related
- 2002-06-07 WO PCT/US2002/017908 patent/WO2002100587A1/en not_active Ceased
- 2002-06-07 DE DE10296913.2T patent/DE10296913B4/de not_active Expired - Fee Related
- 2002-06-07 TW TW091112331A patent/TW583045B/zh not_active IP Right Cessation
Patent Citations (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57181787A (en) | 1981-04-30 | 1982-11-09 | Toshiba Corp | Laser working method |
| US5057664A (en) | 1989-10-20 | 1991-10-15 | Electro Scientific Industries, Inc. | Method and apparatus for laser processing a target material to provide a uniformly smooth, continuous trim profile |
| JPH06234090A (ja) | 1993-02-10 | 1994-08-23 | Mitsubishi Heavy Ind Ltd | 厚板ステンレス鋼のレーザー切断方法 |
| JPH06277861A (ja) | 1993-03-31 | 1994-10-04 | Hitachi Constr Mach Co Ltd | レーザ加工装置及びレーザ加工方法並びにリードフレームの加工方法 |
| US5593606A (en) | 1994-07-18 | 1997-01-14 | Electro Scientific Industries, Inc. | Ultraviolet laser system and method for forming vias in multi-layered targets |
| US5751585A (en) | 1995-03-20 | 1998-05-12 | Electro Scientific Industries, Inc. | High speed, high accuracy multi-stage tool positioning system |
| US5864430A (en) | 1996-09-10 | 1999-01-26 | Sandia Corporation | Gaussian beam profile shaping apparatus, method therefor and evaluation thereof |
| WO2000073013A1 (en) | 1999-05-28 | 2000-12-07 | Electro Scientific Industries, Inc. | Beam shaping and projection imaging with solid state uv gaussian beam to form vias |
| US6433301B1 (en) | 1999-05-28 | 2002-08-13 | Electro Scientific Industries, Inc. | Beam shaping and projection imaging with solid state UV Gaussian beam to form vias |
| WO2001052004A1 (en) | 2000-01-11 | 2001-07-19 | Electro Scientific Industries, Inc. | Abbe error correction system and method |
| US20010029674A1 (en) | 2000-01-11 | 2001-10-18 | Cutler Donald R. | Abbe error correction system and method |
| US20020033558A1 (en) | 2000-09-20 | 2002-03-21 | Fahey Kevin P. | UV laser cutting or shape modification of brittle, high melting temperature target materials such as ceramics or glasses |
| WO2002024396A1 (en) | 2000-09-20 | 2002-03-28 | Electro Scientific Industries, Inc. | Uv laser cutting or shape modification of brittle, high melting temperature target materials such as ceramics or glasses |
| US20020149136A1 (en) | 2000-09-20 | 2002-10-17 | Baird Brian W. | Ultraviolet laser ablative patterning of microstructures in semiconductors |
| US7157038B2 (en) | 2000-09-20 | 2007-01-02 | Electro Scientific Industries, Inc. | Ultraviolet laser ablative patterning of microstructures in semiconductors |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1516635A (zh) | 2004-07-28 |
| US20020149136A1 (en) | 2002-10-17 |
| GB2391189A (en) | 2004-02-04 |
| GB2391189B (en) | 2004-08-18 |
| JP2004528991A (ja) | 2004-09-24 |
| CN1788916B (zh) | 2012-07-25 |
| JP4551086B2 (ja) | 2010-09-22 |
| CA2449574A1 (en) | 2002-12-19 |
| TW583045B (en) | 2004-04-11 |
| CN1240511C (zh) | 2006-02-08 |
| DE10296913T5 (de) | 2004-04-29 |
| GB0327679D0 (en) | 2003-12-31 |
| KR20040007663A (ko) | 2004-01-24 |
| US7157038B2 (en) | 2007-01-02 |
| CN1788916A (zh) | 2006-06-21 |
| WO2002100587A1 (en) | 2002-12-19 |
| KR100877936B1 (ko) | 2009-01-12 |
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