DE10239768B4 - Photoresist-Stripplösung und Verfahren zum Strippen von Photoresists unter Verwendung derselben - Google Patents

Photoresist-Stripplösung und Verfahren zum Strippen von Photoresists unter Verwendung derselben Download PDF

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Publication number
DE10239768B4
DE10239768B4 DE10239768A DE10239768A DE10239768B4 DE 10239768 B4 DE10239768 B4 DE 10239768B4 DE 10239768 A DE10239768 A DE 10239768A DE 10239768 A DE10239768 A DE 10239768A DE 10239768 B4 DE10239768 B4 DE 10239768B4
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DE
Germany
Prior art keywords
photoresist
group
substrate
stripping
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE10239768A
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German (de)
English (en)
Other versions
DE10239768A1 (de
Inventor
Kazumasa Wakiya
Shigeru Yokoi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Ohka Kogyo Co Ltd
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of DE10239768A1 publication Critical patent/DE10239768A1/de
Application granted granted Critical
Publication of DE10239768B4 publication Critical patent/DE10239768B4/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/38—Cationic compounds
    • C11D1/62—Quaternary ammonium compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE10239768A 2001-12-27 2002-08-29 Photoresist-Stripplösung und Verfahren zum Strippen von Photoresists unter Verwendung derselben Expired - Lifetime DE10239768B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001-397568 2001-12-27
JP2001397568 2001-12-27

Publications (2)

Publication Number Publication Date
DE10239768A1 DE10239768A1 (de) 2003-07-10
DE10239768B4 true DE10239768B4 (de) 2013-02-28

Family

ID=19189213

Family Applications (1)

Application Number Title Priority Date Filing Date
DE10239768A Expired - Lifetime DE10239768B4 (de) 2001-12-27 2002-08-29 Photoresist-Stripplösung und Verfahren zum Strippen von Photoresists unter Verwendung derselben

Country Status (4)

Country Link
US (5) US20030138737A1 (https=)
CN (1) CN1224864C (https=)
DE (1) DE10239768B4 (https=)
TW (1) TWI308676B (https=)

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JP4282054B2 (ja) * 2002-09-09 2009-06-17 東京応化工業株式会社 デュアルダマシン構造形成プロセスに用いられる洗浄液および基板の処理方法
US20050049162A1 (en) * 2003-08-29 2005-03-03 Schlosser Ted M. Petroleum-free, ammonia-free cleaner for firearms and ordnance
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CN101487993A (zh) * 2008-01-18 2009-07-22 安集微电子（上海）有限公司 一种厚膜光刻胶清洗剂
TWI450052B (zh) * 2008-06-24 2014-08-21 黛納羅伊有限責任公司 用於後段製程操作有效之剝離溶液
CN101614971B (zh) * 2008-06-27 2013-06-12 安集微电子（上海）有限公司 一种光刻胶清洗剂
KR20100082109A (ko) * 2009-01-08 2010-07-16 최호성 감광성 내식각막의 잔사제거용 조성물
KR100950779B1 (ko) * 2009-08-25 2010-04-02 엘티씨 (주) Ｔｆｔ―ｌｃｄ 통합공정용 포토레지스트 박리제 조성물
US8216767B2 (en) * 2009-09-08 2012-07-10 Taiwan Semiconductor Manufacturing Company, Ltd. Patterning process and chemical amplified photoresist with a photodegradable base
US8956806B2 (en) * 2009-09-18 2015-02-17 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and patterning process
US8512939B2 (en) * 2009-09-25 2013-08-20 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist stripping technique
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CN102141743A (zh) * 2010-08-25 2011-08-03 上海飞凯光电材料股份有限公司 具有金属保护的光刻胶剥离液组合物
US9145618B2 (en) 2010-11-29 2015-09-29 Northeastern University High rate electric field driven nanoelement assembly on an insulated surface
CN102200700B (zh) * 2011-06-08 2012-08-22 绵阳艾萨斯电子材料有限公司 剥离液及其制备方法与应用
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KR101420571B1 (ko) * 2013-07-05 2014-07-16 주식회사 동진쎄미켐 드라이필름 레지스트 박리제 조성물 및 이를 이용한 드라이필름 레지스트의 제거방법
CN110225667B (zh) * 2013-09-11 2023-01-10 花王株式会社 树脂掩模层用洗涤剂组合物及电路基板的制造方法
WO2016028454A1 (en) 2014-08-18 2016-02-25 3M Innovative Properties Company Conductive layered structure and methods of making same
KR101586453B1 (ko) * 2014-08-20 2016-01-21 주식회사 엘지화학 포토레지스트 제거용 스트리퍼 조성물 및 이를 이용한 포토레지스트의 박리방법
CN105425554B (zh) * 2014-09-17 2019-10-25 东友精细化工有限公司 抗蚀剂剥离剂组合物、平板显示器的制法及平板显示器
KR20170021587A (ko) * 2015-08-18 2017-02-28 동우 화인켐 주식회사 레지스트 박리액 조성물
KR20170021586A (ko) * 2015-08-18 2017-02-28 동우 화인켐 주식회사 레지스트 박리액 조성물
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CN119805886B (zh) * 2024-12-11 2025-11-21 湖北兴福电子材料股份有限公司 一种剥膜液及其制备方法

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Also Published As

Publication number Publication date
US20100190112A1 (en) 2010-07-29
US20060014110A1 (en) 2006-01-19
CN1224864C (zh) 2005-10-26
US20050019688A1 (en) 2005-01-27
US20070004933A1 (en) 2007-01-04
DE10239768A1 (de) 2003-07-10
TWI308676B (https=) 2009-04-11
CN1428659A (zh) 2003-07-09
US8697345B2 (en) 2014-04-15
US20030138737A1 (en) 2003-07-24

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