DE102014201554A1 - Dampfphasenepitaxievorrichtung und Dampfphasenepitaxieverfahren - Google Patents
Dampfphasenepitaxievorrichtung und Dampfphasenepitaxieverfahren Download PDFInfo
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- DE102014201554A1 DE102014201554A1 DE102014201554.5A DE102014201554A DE102014201554A1 DE 102014201554 A1 DE102014201554 A1 DE 102014201554A1 DE 102014201554 A DE102014201554 A DE 102014201554A DE 102014201554 A1 DE102014201554 A1 DE 102014201554A1
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- 238000000927 vapour-phase epitaxy Methods 0.000 title claims abstract description 54
- 238000000034 method Methods 0.000 title claims description 146
- 239000007789 gas Substances 0.000 claims abstract description 648
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 38
- 239000004065 semiconductor Substances 0.000 claims description 35
- 239000012530 fluid Substances 0.000 claims description 31
- 239000001257 hydrogen Substances 0.000 claims description 25
- 229910052739 hydrogen Inorganic materials 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 21
- 229910021529 ammonia Inorganic materials 0.000 claims description 19
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 14
- 150000002431 hydrogen Chemical class 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 238000007599 discharging Methods 0.000 claims 2
- 235000012431 wafers Nutrition 0.000 description 47
- 229910002601 GaN Inorganic materials 0.000 description 17
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 17
- 230000015572 biosynthetic process Effects 0.000 description 15
- 239000013078 crystal Substances 0.000 description 11
- 238000000926 separation method Methods 0.000 description 11
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 9
- 230000005484 gravity Effects 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- 239000012159 carrier gas Substances 0.000 description 5
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 101001094044 Mus musculus Solute carrier family 26 member 6 Proteins 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- 239000012808 vapor phase Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000007865 diluting Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 230000000087 stabilizing effect Effects 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- BUHVIAUBTBOHAG-FOYDDCNASA-N (2r,3r,4s,5r)-2-[6-[[2-(3,5-dimethoxyphenyl)-2-(2-methylphenyl)ethyl]amino]purin-9-yl]-5-(hydroxymethyl)oxolane-3,4-diol Chemical compound COC1=CC(OC)=CC(C(CNC=2C=3N=CN(C=3N=CN=2)[C@H]2[C@@H]([C@H](O)[C@@H](CO)O2)O)C=2C(=CC=CC=2)C)=C1 BUHVIAUBTBOHAG-FOYDDCNASA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C23C16/303—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013016015A JP6134522B2 (ja) | 2013-01-30 | 2013-01-30 | 気相成長装置および気相成長方法 |
| JP2013-016015 | 2013-01-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE102014201554A1 true DE102014201554A1 (de) | 2014-07-31 |
Family
ID=51163737
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE102014201554.5A Pending DE102014201554A1 (de) | 2013-01-30 | 2014-01-29 | Dampfphasenepitaxievorrichtung und Dampfphasenepitaxieverfahren |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9624603B2 (enExample) |
| JP (1) | JP6134522B2 (enExample) |
| KR (1) | KR101610638B1 (enExample) |
| CN (1) | CN103966574B (enExample) |
| DE (1) | DE102014201554A1 (enExample) |
| TW (1) | TWI494469B (enExample) |
Cited By (2)
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| CN110050333A (zh) * | 2016-12-08 | 2019-07-23 | 应用材料公司 | 时间性原子层沉积处理腔室 |
| WO2021102726A1 (zh) * | 2019-11-27 | 2021-06-03 | 东莞市中镓半导体科技有限公司 | 一种用于GaN材料生长的线性喷头 |
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| JP6199619B2 (ja) * | 2013-06-13 | 2017-09-20 | 株式会社ニューフレアテクノロジー | 気相成長装置 |
| JP6153401B2 (ja) * | 2013-07-02 | 2017-06-28 | 株式会社ニューフレアテクノロジー | 気相成長装置および気相成長方法 |
| TWI639179B (zh) | 2014-01-31 | 2018-10-21 | 美商蘭姆研究公司 | 真空整合硬遮罩製程及設備 |
| KR102215965B1 (ko) * | 2014-04-11 | 2021-02-18 | 주성엔지니어링(주) | 가스 분사 장치 및 이를 포함하는 기판 처리 장치 |
| CN104120408B (zh) * | 2014-08-06 | 2016-09-07 | 上海世山科技有限公司 | 一种改进衬底气流方向的hvpe反应器 |
| KR102267923B1 (ko) * | 2014-08-26 | 2021-06-22 | 에이에스엠 아이피 홀딩 비.브이. | 증착 장치 |
| JP6386901B2 (ja) * | 2014-12-17 | 2018-09-05 | 株式会社ニューフレアテクノロジー | 気相成長装置及び気相成長方法 |
| JP6193284B2 (ja) | 2015-03-18 | 2017-09-06 | 株式会社東芝 | 流路構造、吸排気部材、及び処理装置 |
| JP6054470B2 (ja) | 2015-05-26 | 2016-12-27 | 株式会社日本製鋼所 | 原子層成長装置 |
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| CN113039486B (zh) | 2018-11-14 | 2024-11-12 | 朗姆研究公司 | 可用于下一代光刻法中的硬掩模制作方法 |
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| US12062538B2 (en) | 2019-04-30 | 2024-08-13 | Lam Research Corporation | Atomic layer etch and selective deposition process for extreme ultraviolet lithography resist improvement |
| CN110158055B (zh) * | 2019-05-15 | 2022-01-14 | 拓荆科技股份有限公司 | 多段喷淋组件 |
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| EP3990984A4 (en) * | 2019-06-27 | 2023-07-26 | Lam Research Corporation | Apparatus for photoresist dry deposition |
| CN111020693B (zh) * | 2019-12-27 | 2021-01-29 | 季华实验室 | 一种碳化硅外延生长设备的进气装置 |
| KR20250007037A (ko) | 2020-01-15 | 2025-01-13 | 램 리써치 코포레이션 | 포토레지스트 부착 및 선량 감소를 위한 하부층 |
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| JP7562696B2 (ja) | 2020-11-13 | 2024-10-07 | ラム リサーチ コーポレーション | フォトレジストのドライ除去用プロセスツール |
| CN114107953A (zh) * | 2021-09-18 | 2022-03-01 | 江苏微导纳米科技股份有限公司 | 原子层沉积装置及其喷淋板 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001081569A (ja) | 1999-09-16 | 2001-03-27 | Toshiba Corp | 気相成長装置 |
| JP2013016015A (ja) | 2011-07-04 | 2013-01-24 | Fujitsu Semiconductor Ltd | メモリアクセス制御装置、及びメモリアクセス制御方法 |
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| JP3572211B2 (ja) | 1998-12-28 | 2004-09-29 | 京セラ株式会社 | 半導体製造装置用ガス導入ノズル |
| KR100513920B1 (ko) | 2003-10-31 | 2005-09-08 | 주식회사 시스넥스 | 화학기상증착 반응기 |
| KR101309334B1 (ko) * | 2004-08-02 | 2013-09-16 | 비코 인스트루먼츠 인코포레이티드 | 화학적 기상 증착 반응기용 멀티 가스 분배 인젝터 |
| JP4981485B2 (ja) * | 2007-03-05 | 2012-07-18 | 株式会社ニューフレアテクノロジー | 気相成長方法および気相成長装置 |
| JP5140321B2 (ja) * | 2007-05-31 | 2013-02-06 | 株式会社アルバック | シャワーヘッド |
| KR20090011978A (ko) * | 2007-07-27 | 2009-02-02 | 주식회사 아이피에스 | 샤워헤드 및 그를 가지는 반도체처리장치 |
| JP4865672B2 (ja) * | 2007-10-22 | 2012-02-01 | シャープ株式会社 | 気相成長装置及び半導体素子の製造方法 |
| KR20110074854A (ko) | 2008-08-28 | 2011-07-04 | 어플라이드 머티어리얼스, 인코포레이티드 | 유량 경사 설계를 갖는 균일한 실리콘 막을 증착하는 방법 및 장치 |
| JP4576466B2 (ja) * | 2009-03-27 | 2010-11-10 | シャープ株式会社 | 気相成長装置及び気相成長方法 |
| JP2010238831A (ja) | 2009-03-31 | 2010-10-21 | Sharp Corp | 気相成長装置及び気相成長方法 |
| US20120012049A1 (en) * | 2010-07-16 | 2012-01-19 | Wei-Yung Hsu | Hvpe chamber |
| JP5622477B2 (ja) * | 2010-08-06 | 2014-11-12 | 三菱重工業株式会社 | 真空処理装置 |
| JP2011109141A (ja) * | 2011-02-28 | 2011-06-02 | Masayoshi Murata | プラズマｃｖｄ装置及びプラズマｃｖｄ装置を用いたシリコン系膜の製造方法 |
| JP5259804B2 (ja) | 2011-11-08 | 2013-08-07 | シャープ株式会社 | 気相成長装置及び気相成長方法 |
| JP6038618B2 (ja) | 2011-12-15 | 2016-12-07 | 株式会社ニューフレアテクノロジー | 成膜装置および成膜方法 |
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2013
- 2013-01-30 JP JP2013016015A patent/JP6134522B2/ja active Active
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2014
- 2014-01-17 TW TW103101697A patent/TWI494469B/zh active
- 2014-01-27 US US14/164,498 patent/US9624603B2/en active Active
- 2014-01-28 CN CN201410041218.1A patent/CN103966574B/zh active Active
- 2014-01-28 KR KR1020140010238A patent/KR101610638B1/ko active Active
- 2014-01-29 DE DE102014201554.5A patent/DE102014201554A1/de active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001081569A (ja) | 1999-09-16 | 2001-03-27 | Toshiba Corp | 気相成長装置 |
| JP2013016015A (ja) | 2011-07-04 | 2013-01-24 | Fujitsu Semiconductor Ltd | メモリアクセス制御装置、及びメモリアクセス制御方法 |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110050333A (zh) * | 2016-12-08 | 2019-07-23 | 应用材料公司 | 时间性原子层沉积处理腔室 |
| CN110050333B (zh) * | 2016-12-08 | 2023-06-09 | 应用材料公司 | 时间性原子层沉积处理腔室 |
| WO2021102726A1 (zh) * | 2019-11-27 | 2021-06-03 | 东莞市中镓半导体科技有限公司 | 一种用于GaN材料生长的线性喷头 |
| CN113508189A (zh) * | 2019-11-27 | 2021-10-15 | 东莞市中镓半导体科技有限公司 | 一种用于GaN材料生长的线性喷头 |
| US12060652B2 (en) | 2019-11-27 | 2024-08-13 | Sino Nitride Semiconductor Co., Ltd. | Linear showerhead for growing GaN |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101610638B1 (ko) | 2016-04-08 |
| US9624603B2 (en) | 2017-04-18 |
| JP2014146767A (ja) | 2014-08-14 |
| US20140209015A1 (en) | 2014-07-31 |
| TWI494469B (zh) | 2015-08-01 |
| JP6134522B2 (ja) | 2017-05-24 |
| TW201430166A (zh) | 2014-08-01 |
| CN103966574A (zh) | 2014-08-06 |
| KR20140098000A (ko) | 2014-08-07 |
| CN103966574B (zh) | 2017-04-12 |
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