DE102013227153A1 - Programmierbare logische Vorrichtung und Halbleitervorrichtung - Google Patents

Programmierbare logische Vorrichtung und Halbleitervorrichtung Download PDF

Info

Publication number
DE102013227153A1
DE102013227153A1 DE102013227153.0A DE102013227153A DE102013227153A1 DE 102013227153 A1 DE102013227153 A1 DE 102013227153A1 DE 102013227153 A DE102013227153 A DE 102013227153A DE 102013227153 A1 DE102013227153 A1 DE 102013227153A1
Authority
DE
Germany
Prior art keywords
switch
line
programmable logic
potential
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE102013227153.0A
Other languages
German (de)
English (en)
Inventor
Yoshiyuki Kurokawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of DE102013227153A1 publication Critical patent/DE102013227153A1/de
Pending legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/173Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components
    • H03K19/177Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components arranged in matrix form
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/173Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components

Landscapes

  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Logic Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
DE102013227153.0A 2012-12-24 2013-12-24 Programmierbare logische Vorrichtung und Halbleitervorrichtung Pending DE102013227153A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012280383 2012-12-24
JP2012-280383 2012-12-24

Publications (1)

Publication Number Publication Date
DE102013227153A1 true DE102013227153A1 (de) 2014-06-26

Family

ID=50879047

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102013227153.0A Pending DE102013227153A1 (de) 2012-12-24 2013-12-24 Programmierbare logische Vorrichtung und Halbleitervorrichtung

Country Status (5)

Country Link
US (1) US9391620B2 (enExample)
JP (1) JP6433655B2 (enExample)
KR (1) KR102103372B1 (enExample)
DE (1) DE102013227153A1 (enExample)
TW (1) TWI611419B (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013176199A1 (en) * 2012-05-25 2013-11-28 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device and semiconductor device
JP6272713B2 (ja) 2013-03-25 2018-01-31 株式会社半導体エネルギー研究所 プログラマブルロジックデバイス及び半導体装置
US9294096B2 (en) 2014-02-28 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6677449B2 (ja) 2014-03-13 2020-04-08 株式会社半導体エネルギー研究所 半導体装置の駆動方法
JP6541376B2 (ja) 2014-03-13 2019-07-10 株式会社半導体エネルギー研究所 プログラマブルロジックデバイスの動作方法
US9875332B2 (en) * 2015-09-11 2018-01-23 Arm Limited Contact resistance mitigation
WO2017081591A1 (en) * 2015-11-13 2017-05-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic component, and electronic device
JP6917168B2 (ja) 2016-04-01 2021-08-11 株式会社半導体エネルギー研究所 半導体装置
WO2018069787A1 (en) 2016-10-14 2018-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, broadcasting system, and electronic device
CN111766935B (zh) * 2019-04-02 2022-06-21 瑞昱半导体股份有限公司 集成电路芯片及用于集成电路芯片的组态调整方法
JP7673806B2 (ja) * 2021-07-07 2025-05-09 日本電信電話株式会社 再構成可能な回路装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10285014A (ja) 1997-04-11 1998-10-23 Nec Corp メモリ付加型プログラマブルロジックlsi

Family Cites Families (130)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60198861A (ja) 1984-03-23 1985-10-08 Fujitsu Ltd 薄膜トランジスタ
JPH0244256B2 (ja) 1987-01-28 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn2o5deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244260B2 (ja) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn5o8deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPS63210023A (ja) 1987-02-24 1988-08-31 Natl Inst For Res In Inorg Mater InGaZn↓4O↓7で示される六方晶系の層状構造を有する化合物およびその製造法
JPH0244258B2 (ja) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn3o6deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244262B2 (ja) 1987-02-27 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn6o9deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244263B2 (ja) 1987-04-22 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn7o10deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
US5343406A (en) 1989-07-28 1994-08-30 Xilinx, Inc. Distributed memory architecture for a configurable logic array and method for using distributed memory
JP2544020B2 (ja) * 1990-11-19 1996-10-16 川崎製鉄株式会社 プログラマブル論理素子
JPH05251705A (ja) 1992-03-04 1993-09-28 Fuji Xerox Co Ltd 薄膜トランジスタ
US5352940A (en) 1993-05-27 1994-10-04 Altera Corporation Ram convertible look-up table based macrocell for PLDs
JP3494469B2 (ja) * 1994-05-26 2004-02-09 株式会社ルネサステクノロジ フィールドプログラマブルゲートアレイ
JP3479375B2 (ja) 1995-03-27 2003-12-15 科学技術振興事業団 亜酸化銅等の金属酸化物半導体による薄膜トランジスタとpn接合を形成した金属酸化物半導体装置およびそれらの製造方法
US5808942A (en) 1995-06-09 1998-09-15 Advanced Micro Devices, Inc. Field programmable gate array (FPGA) having an improved configuration memory and look up table
DE69635107D1 (de) 1995-08-03 2005-09-29 Koninkl Philips Electronics Nv Halbleiteranordnung mit einem transparenten schaltungselement
JP3625598B2 (ja) 1995-12-30 2005-03-02 三星電子株式会社 液晶表示装置の製造方法
US6184709B1 (en) * 1996-04-09 2001-02-06 Xilinx, Inc. Programmable logic device having a composable memory array overlaying a CLB array
US6057704A (en) 1997-12-12 2000-05-02 Xilinx, Inc. Partially reconfigurable FPGA and method of operating same
JP4170454B2 (ja) 1998-07-24 2008-10-22 Hoya株式会社 透明導電性酸化物薄膜を有する物品及びその製造方法
JP2000150861A (ja) 1998-11-16 2000-05-30 Tdk Corp 酸化物薄膜
JP3276930B2 (ja) 1998-11-17 2002-04-22 科学技術振興事業団 トランジスタ及び半導体装置
US6278290B1 (en) * 1999-08-13 2001-08-21 Xilinx, Inc. Method and circuit for operating programmable logic devices during power-up and stand-by modes
TW460731B (en) 1999-09-03 2001-10-21 Ind Tech Res Inst Electrode structure and production method of wide viewing angle LCD
JP4089858B2 (ja) 2000-09-01 2008-05-28 国立大学法人東北大学 半導体デバイス
KR20020038482A (ko) 2000-11-15 2002-05-23 모리시타 요이찌 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널
JP3997731B2 (ja) 2001-03-19 2007-10-24 富士ゼロックス株式会社 基材上に結晶性半導体薄膜を形成する方法
JP2002289859A (ja) 2001-03-23 2002-10-04 Minolta Co Ltd 薄膜トランジスタ
JP4090716B2 (ja) 2001-09-10 2008-05-28 雅司 川崎 薄膜トランジスタおよびマトリクス表示装置
JP3925839B2 (ja) 2001-09-10 2007-06-06 シャープ株式会社 半導体記憶装置およびその試験方法
JP4164562B2 (ja) 2002-09-11 2008-10-15 独立行政法人科学技術振興機構 ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ
US7061014B2 (en) 2001-11-05 2006-06-13 Japan Science And Technology Agency Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film
JP4083486B2 (ja) 2002-02-21 2008-04-30 独立行政法人科学技術振興機構 LnCuO(S,Se,Te)単結晶薄膜の製造方法
US7049190B2 (en) 2002-03-15 2006-05-23 Sanyo Electric Co., Ltd. Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device
JP3933591B2 (ja) 2002-03-26 2007-06-20 淳二 城戸 有機エレクトロルミネッセント素子
US7339187B2 (en) 2002-05-21 2008-03-04 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures
JP2004022625A (ja) 2002-06-13 2004-01-22 Murata Mfg Co Ltd 半導体デバイス及び該半導体デバイスの製造方法
US7105868B2 (en) 2002-06-24 2006-09-12 Cermet, Inc. High-electron mobility transistor with zinc oxide
US7067843B2 (en) 2002-10-11 2006-06-27 E. I. Du Pont De Nemours And Company Transparent oxide semiconductor thin film transistors
JP4166105B2 (ja) 2003-03-06 2008-10-15 シャープ株式会社 半導体装置およびその製造方法
JP2004273732A (ja) 2003-03-07 2004-09-30 Sharp Corp アクティブマトリクス基板およびその製造方法
JP4108633B2 (ja) 2003-06-20 2008-06-25 シャープ株式会社 薄膜トランジスタおよびその製造方法ならびに電子デバイス
US7262463B2 (en) 2003-07-25 2007-08-28 Hewlett-Packard Development Company, L.P. Transistor including a deposited channel region having a doped portion
US6933747B1 (en) * 2003-10-10 2005-08-23 Xilinx, Inc. Structures and methods of testing interconnect structures in programmable logic devices
US7656190B2 (en) 2003-12-24 2010-02-02 Tier Logic, Inc Incrementer based on carry chain compression
US7088606B2 (en) * 2004-03-10 2006-08-08 Altera Corporation Dynamic RAM storage techniques
EP2413366B1 (en) 2004-03-12 2017-01-11 Japan Science And Technology Agency A switching element of LCDs or organic EL displays
US7282782B2 (en) 2004-03-12 2007-10-16 Hewlett-Packard Development Company, L.P. Combined binary oxide semiconductor device
US7297977B2 (en) 2004-03-12 2007-11-20 Hewlett-Packard Development Company, L.P. Semiconductor device
US7145174B2 (en) 2004-03-12 2006-12-05 Hewlett-Packard Development Company, Lp. Semiconductor device
US7400167B2 (en) * 2005-08-16 2008-07-15 Altera Corporation Apparatus and methods for optimizing the performance of programmable logic devices
US7211825B2 (en) 2004-06-14 2007-05-01 Yi-Chi Shih Indium oxide-based thin film transistors and circuits
US7084665B1 (en) 2004-07-22 2006-08-01 Altera Corporation Distributed random access memory in a programmable logic device
JP2006100760A (ja) 2004-09-02 2006-04-13 Casio Comput Co Ltd 薄膜トランジスタおよびその製造方法
US7285501B2 (en) 2004-09-17 2007-10-23 Hewlett-Packard Development Company, L.P. Method of forming a solution processed device
US7196942B2 (en) 2004-10-20 2007-03-27 Stmicroelectronics Pvt. Ltd. Configuration memory structure
US7298084B2 (en) 2004-11-02 2007-11-20 3M Innovative Properties Company Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes
US7868326B2 (en) 2004-11-10 2011-01-11 Canon Kabushiki Kaisha Field effect transistor
US7863611B2 (en) 2004-11-10 2011-01-04 Canon Kabushiki Kaisha Integrated circuits utilizing amorphous oxides
US7791072B2 (en) 2004-11-10 2010-09-07 Canon Kabushiki Kaisha Display
US7453065B2 (en) 2004-11-10 2008-11-18 Canon Kabushiki Kaisha Sensor and image pickup device
US7829444B2 (en) 2004-11-10 2010-11-09 Canon Kabushiki Kaisha Field effect transistor manufacturing method
CN101057339B (zh) 2004-11-10 2012-12-26 佳能株式会社 无定形氧化物和场效应晶体管
CA2585063C (en) 2004-11-10 2013-01-15 Canon Kabushiki Kaisha Light-emitting device
US7579224B2 (en) 2005-01-21 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a thin film semiconductor device
TWI562380B (en) 2005-01-28 2016-12-11 Semiconductor Energy Lab Co Ltd Semiconductor device, electronic device, and method of manufacturing semiconductor device
TWI445178B (zh) 2005-01-28 2014-07-11 半導體能源研究所股份有限公司 半導體裝置,電子裝置,和半導體裝置的製造方法
US7858451B2 (en) 2005-02-03 2010-12-28 Semiconductor Energy Laboratory Co., Ltd. Electronic device, semiconductor device and manufacturing method thereof
US7948171B2 (en) 2005-02-18 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US20060197092A1 (en) 2005-03-03 2006-09-07 Randy Hoffman System and method for forming conductive material on a substrate
US8681077B2 (en) 2005-03-18 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and display device, driving method and electronic apparatus thereof
WO2006105077A2 (en) 2005-03-28 2006-10-05 Massachusetts Institute Of Technology Low voltage thin film transistor with high-k dielectric material
US7645478B2 (en) 2005-03-31 2010-01-12 3M Innovative Properties Company Methods of making displays
US8300031B2 (en) 2005-04-20 2012-10-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element
JP2006344849A (ja) 2005-06-10 2006-12-21 Casio Comput Co Ltd 薄膜トランジスタ
US7274214B1 (en) * 2005-06-14 2007-09-25 Xilinx, Inc. Efficient tile layout for a programmable logic device
US7691666B2 (en) 2005-06-16 2010-04-06 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7402506B2 (en) 2005-06-16 2008-07-22 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7507618B2 (en) 2005-06-27 2009-03-24 3M Innovative Properties Company Method for making electronic devices using metal oxide nanoparticles
KR100711890B1 (ko) 2005-07-28 2007-04-25 삼성에스디아이 주식회사 유기 발광표시장치 및 그의 제조방법
JP2007059128A (ja) 2005-08-23 2007-03-08 Canon Inc 有機el表示装置およびその製造方法
JP5116225B2 (ja) 2005-09-06 2013-01-09 キヤノン株式会社 酸化物半導体デバイスの製造方法
JP2007073705A (ja) 2005-09-06 2007-03-22 Canon Inc 酸化物半導体チャネル薄膜トランジスタおよびその製造方法
JP4850457B2 (ja) 2005-09-06 2012-01-11 キヤノン株式会社 薄膜トランジスタ及び薄膜ダイオード
JP4280736B2 (ja) 2005-09-06 2009-06-17 キヤノン株式会社 半導体素子
EP3614442A3 (en) 2005-09-29 2020-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having oxide semiconductor layer and manufactoring method thereof
JP5037808B2 (ja) 2005-10-20 2012-10-03 キヤノン株式会社 アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置
KR101117948B1 (ko) 2005-11-15 2012-02-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 디스플레이 장치 제조 방법
TWI292281B (en) 2005-12-29 2008-01-01 Ind Tech Res Inst Pixel structure of active organic light emitting diode and method of fabricating the same
US7867636B2 (en) 2006-01-11 2011-01-11 Murata Manufacturing Co., Ltd. Transparent conductive film and method for manufacturing the same
JP4977478B2 (ja) 2006-01-21 2012-07-18 三星電子株式会社 ZnOフィルム及びこれを用いたTFTの製造方法
US7576394B2 (en) 2006-02-02 2009-08-18 Kochi Industrial Promotion Center Thin film transistor including low resistance conductive thin films and manufacturing method thereof
US7977169B2 (en) 2006-02-15 2011-07-12 Kochi Industrial Promotion Center Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof
KR20070101595A (ko) 2006-04-11 2007-10-17 삼성전자주식회사 ZnO TFT
US20070252928A1 (en) 2006-04-28 2007-11-01 Toppan Printing Co., Ltd. Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof
JP5028033B2 (ja) 2006-06-13 2012-09-19 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
US7797664B2 (en) 2006-06-23 2010-09-14 National Institute Of Advanced Industrial Science And Technology System for configuring an integrated circuit and method thereof
JP4999400B2 (ja) 2006-08-09 2012-08-15 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
JP4609797B2 (ja) 2006-08-09 2011-01-12 Nec液晶テクノロジー株式会社 薄膜デバイス及びその製造方法
JP4332545B2 (ja) 2006-09-15 2009-09-16 キヤノン株式会社 電界効果型トランジスタ及びその製造方法
JP4274219B2 (ja) 2006-09-27 2009-06-03 セイコーエプソン株式会社 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置
JP5164357B2 (ja) 2006-09-27 2013-03-21 キヤノン株式会社 半導体装置及び半導体装置の製造方法
US7622371B2 (en) 2006-10-10 2009-11-24 Hewlett-Packard Development Company, L.P. Fused nanocrystal thin film semiconductor and method
US7772021B2 (en) 2006-11-29 2010-08-10 Samsung Electronics Co., Ltd. Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays
JP2008140684A (ja) 2006-12-04 2008-06-19 Toppan Printing Co Ltd カラーelディスプレイおよびその製造方法
KR101303578B1 (ko) 2007-01-05 2013-09-09 삼성전자주식회사 박막 식각 방법
US8207063B2 (en) 2007-01-26 2012-06-26 Eastman Kodak Company Process for atomic layer deposition
KR100851215B1 (ko) 2007-03-14 2008-08-07 삼성에스디아이 주식회사 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치
US7795613B2 (en) 2007-04-17 2010-09-14 Toppan Printing Co., Ltd. Structure with transistor
KR101325053B1 (ko) 2007-04-18 2013-11-05 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 이의 제조 방법
KR20080094300A (ko) 2007-04-19 2008-10-23 삼성전자주식회사 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이
KR101334181B1 (ko) 2007-04-20 2013-11-28 삼성전자주식회사 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법
CN101663762B (zh) 2007-04-25 2011-09-21 佳能株式会社 氧氮化物半导体
KR101345376B1 (ko) 2007-05-29 2013-12-24 삼성전자주식회사 ZnO 계 박막 트랜지스터 및 그 제조방법
EP2201569A4 (en) 2007-09-06 2011-07-13 Tabula Inc CONFIGURATION CONTEXT CHANGER
JP5215158B2 (ja) 2007-12-17 2013-06-19 富士フイルム株式会社 無機結晶性配向膜及びその製造方法、半導体デバイス
WO2010019440A1 (en) 2008-08-14 2010-02-18 Nantero, Inc. Nonvolatile nanotube programmable logic devices and nonvolatile nanoture field programmable gate arrays using same
JP4623179B2 (ja) 2008-09-18 2011-02-02 ソニー株式会社 薄膜トランジスタおよびその製造方法
JP5451280B2 (ja) 2008-10-09 2014-03-26 キヤノン株式会社 ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置
JP2010124373A (ja) * 2008-11-21 2010-06-03 Renesas Technology Corp 半導体装置
CN102714496B (zh) 2010-01-20 2016-06-29 株式会社半导体能源研究所 半导体装置
KR101899880B1 (ko) 2011-02-17 2018-09-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 프로그래머블 lsi
JP5883699B2 (ja) * 2011-04-13 2016-03-15 株式会社半導体エネルギー研究所 プログラマブルlsi
US9762246B2 (en) 2011-05-20 2017-09-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with a storage circuit having an oxide semiconductor
US9654107B2 (en) * 2012-04-27 2017-05-16 Semiconductor Energy Laboratory Co., Ltd. Programmable LSI
SG10201608665WA (en) * 2012-05-02 2016-12-29 Semiconductor Energy Lab Co Ltd Programmable logic device
WO2013176199A1 (en) 2012-05-25 2013-11-28 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device and semiconductor device
JP6377317B2 (ja) * 2012-05-30 2018-08-22 株式会社半導体エネルギー研究所 プログラマブルロジックデバイス
TWI591966B (zh) * 2012-10-17 2017-07-11 半導體能源研究所股份有限公司 可編程邏輯裝置及可編程邏輯裝置的驅動方法
JP6368155B2 (ja) * 2013-06-18 2018-08-01 株式会社半導体エネルギー研究所 プログラマブルロジックデバイス
JP6352070B2 (ja) * 2013-07-05 2018-07-04 株式会社半導体エネルギー研究所 半導体装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10285014A (ja) 1997-04-11 1998-10-23 Nec Corp メモリ付加型プログラマブルロジックlsi

Also Published As

Publication number Publication date
JP2014143680A (ja) 2014-08-07
TWI611419B (zh) 2018-01-11
KR20140082566A (ko) 2014-07-02
TW201428765A (zh) 2014-07-16
JP6433655B2 (ja) 2018-12-05
US20140176185A1 (en) 2014-06-26
KR102103372B1 (ko) 2020-04-22
US9391620B2 (en) 2016-07-12

Similar Documents

Publication Publication Date Title
DE102013227153A1 (de) Programmierbare logische Vorrichtung und Halbleitervorrichtung
DE112012001395B4 (de) Signalverarbeitungsschaltung
DE112014001567B4 (de) Halbleitervorrichtung und Verfahren zum Betreiben der Halbleitervorrichtung
DE112012003576B4 (de) Halbleitervorrichtung
CN104321967B (zh) 可编程逻辑装置及半导体装置
JP6806597B2 (ja) 半導体装置
DE112015000705T5 (de) Vorrichtung
DE112015004644T5 (de) Logikschaltung, Verarbeitungseinheit, elektronisches Bauelement und elektronische Vorrichtung
US9478276B2 (en) Memory device and semiconductor device
DE102013022449B3 (de) Halbleitervorrichtung und elektronisches Gerät
US11137813B2 (en) Analog arithmetic circuit, semiconductor device, and electronic device
DE112014006147T5 (de) Vorrichtung
DE102012218310B4 (de) Halbleiterbauelement
DE102013207217A1 (de) Programmierbare LSI
DE112013002106T5 (de) Halbleitervorrichtung und Verfahren zum Herstellen desselben
US8970253B2 (en) Programmable logic device and semiconductor device
DE112014000798T5 (de) Programmierbare logische Vorrichtung und Halbleitervorrichtung
DE112015001133T5 (de) Betriebsverfahren für eine Halbleitervorrichtung
US9172369B2 (en) Programmable logic device and semiconductor device
US20150256182A1 (en) Semiconductor device
US9509314B2 (en) Method for operating programmable logic device
DE112014002034T5 (de) Speichervorrichtung und Halbleitervorrichtung

Legal Events

Date Code Title Description
R012 Request for examination validly filed
R002 Refusal decision in examination/registration proceedings
R003 Refusal decision now final