DE102008052595B4 - Verfahren zur Herstellung eines Halbleiterbauelements als High-Electron-Mobility-Transistorhalbleiterbauelement (HEMT) mit feldabschwächender Platte und Halbleiterbauelement - Google Patents

Verfahren zur Herstellung eines Halbleiterbauelements als High-Electron-Mobility-Transistorhalbleiterbauelement (HEMT) mit feldabschwächender Platte und Halbleiterbauelement Download PDF

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Publication number
DE102008052595B4
DE102008052595B4 DE102008052595A DE102008052595A DE102008052595B4 DE 102008052595 B4 DE102008052595 B4 DE 102008052595B4 DE 102008052595 A DE102008052595 A DE 102008052595A DE 102008052595 A DE102008052595 A DE 102008052595A DE 102008052595 B4 DE102008052595 B4 DE 102008052595B4
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layer
gate
forming
field plate
semiconductor device
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DE102008052595A1 (de
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Ioulia Lakewood Smorchkova
Carol Walnut Namba
Po-Hsin Anaheim Liu
Robert Camarillo Coffie
Roger Torrance Tsai
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Northrop Grumman Systems Corp
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Northrop Grumman Space and Mission Systems Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/473—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT
    • H10D30/4732—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT using Group III-V semiconductor material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/112—Field plates comprising multiple field plate segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

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  • Junction Field-Effect Transistors (AREA)
  • Drying Of Semiconductors (AREA)
DE102008052595A 2007-10-25 2008-10-21 Verfahren zur Herstellung eines Halbleiterbauelements als High-Electron-Mobility-Transistorhalbleiterbauelement (HEMT) mit feldabschwächender Platte und Halbleiterbauelement Active DE102008052595B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/976,590 2007-10-25
US11/976,590 US7800132B2 (en) 2007-10-25 2007-10-25 High electron mobility transistor semiconductor device having field mitigating plate and fabrication method thereof

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DE102008052595A1 DE102008052595A1 (de) 2009-04-30
DE102008052595B4 true DE102008052595B4 (de) 2011-05-12

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US (1) US7800132B2 (enExample)
JP (1) JP2009105405A (enExample)
DE (1) DE102008052595B4 (enExample)

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DE102016123934A1 (de) * 2016-12-09 2018-06-14 United Monolithic Semiconductors Gmbh Verfahren zur Herstellung eines Transistors

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US8541817B2 (en) * 2009-11-06 2013-09-24 Nitek, Inc. Multilayer barrier III-nitride transistor for high voltage electronics
JP5660280B2 (ja) * 2010-03-27 2015-01-28 日本電気株式会社 電界効果トランジスタ、電界効果トランジスタの製造方法、および電子装置
DE102010016993A1 (de) 2010-05-18 2011-11-24 United Monolithic Semiconductors Gmbh Halbleiter-Bauelement
US8710511B2 (en) 2011-07-29 2014-04-29 Northrop Grumman Systems Corporation AIN buffer N-polar GaN HEMT profile
US8455312B2 (en) * 2011-09-12 2013-06-04 Cindy X. Qiu Fabrication methods for T-gate and inverted L-gate structure for high frequency devices and circuits
US8530978B1 (en) * 2011-12-06 2013-09-10 Hrl Laboratories, Llc High current high voltage GaN field effect transistors and method of fabricating same
JP6268366B2 (ja) * 2012-09-28 2018-01-31 パナソニックＩｐマネジメント株式会社 半導体装置
KR102065114B1 (ko) * 2013-03-14 2020-01-10 삼성전자주식회사 파워 소자의 전류 붕괴를 감소시키는 구동방법
US9048184B2 (en) * 2013-03-15 2015-06-02 Northrop Grumman Systems Corporation Method of forming a gate contact
JP2015195288A (ja) * 2014-03-31 2015-11-05 住友電工デバイス・イノベーション株式会社 半導体装置及び半導体装置の製造方法
US10276712B2 (en) 2014-05-29 2019-04-30 Hrl Laboratories, Llc III-nitride field-effect transistor with dual gates
JP6436531B2 (ja) * 2015-01-30 2018-12-12 住友電工デバイス・イノベーション株式会社 半導体装置の製造方法
CN106328703B (zh) * 2015-06-18 2019-07-19 台达电子工业股份有限公司 半导体装置
TWI626742B (zh) 2015-06-18 2018-06-11 台達電子工業股份有限公司 半導體裝置
US9812532B1 (en) 2015-08-28 2017-11-07 Hrl Laboratories, Llc III-nitride P-channel transistor
EP3378097A4 (en) 2015-11-19 2019-09-11 HRL Laboratories, LLC III NITRIDE FIELD EFFECT TRANSISTOR WITH TWO GATES
JP6811737B2 (ja) * 2018-03-13 2021-01-13 株式会社東芝 半導体装置
JP2020150193A (ja) * 2019-03-15 2020-09-17 株式会社東芝 半導体装置
US11075271B2 (en) * 2019-10-14 2021-07-27 Cree, Inc. Stepped field plates with proximity to conduction channel and related fabrication methods
WO2021230283A1 (ja) * 2020-05-13 2021-11-18 ヌヴォトンテクノロジージャパン株式会社 電力増幅用半導体装置
JP7156586B1 (ja) * 2022-03-17 2022-10-19 三菱電機株式会社 半導体装置の製造方法
EP4471871A4 (en) * 2022-04-24 2025-03-19 Huawei Technologies Co., Ltd. SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREFOR
US20240072130A1 (en) * 2022-08-29 2024-02-29 Raytheon Company T-gate transistor with mini field plate and angled gate stem
CN119153322B (zh) * 2024-11-11 2025-01-14 珠海镓未来科技有限公司 氮化镓半导体功率器件及其制作方法
CN120358772B (zh) * 2025-06-23 2025-10-14 山东大学 一种基于悬空栅工艺的氮化镓器件及其制造方法

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DE102008052595A1 (de) 2009-04-30
US7800132B2 (en) 2010-09-21
JP2009105405A (ja) 2009-05-14

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