JP2009105405A - 電界緩和プレートを有する高電子移動度トランジスタ半導体デバイスおよびその製造方法 - Google Patents

電界緩和プレートを有する高電子移動度トランジスタ半導体デバイスおよびその製造方法 Download PDF

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Publication number
JP2009105405A
JP2009105405A JP2008271153A JP2008271153A JP2009105405A JP 2009105405 A JP2009105405 A JP 2009105405A JP 2008271153 A JP2008271153 A JP 2008271153A JP 2008271153 A JP2008271153 A JP 2008271153A JP 2009105405 A JP2009105405 A JP 2009105405A
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Japan
Prior art keywords
gate
layer
semiconductor device
forming
field plate
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Pending
Application number
JP2008271153A
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English (en)
Japanese (ja)
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JP2009105405A5 (enExample
Inventor
Ioulia Smorchkova
スモーチコバ イオウリア
Carol Namba
ナンバ キャロル
Po-Hsin Liu
リウ ポ−シン
Robert Coffie
コフィー ロバート
Tsuai Roger
ツァイ ロジャー
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Northrop Grumman Space and Mission Systems Corp
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Northrop Grumman Space and Mission Systems Corp
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Publication of JP2009105405A publication Critical patent/JP2009105405A/ja
Publication of JP2009105405A5 publication Critical patent/JP2009105405A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/473—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT
    • H10D30/4732—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT using Group III-V semiconductor material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/112—Field plates comprising multiple field plate segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

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  • Junction Field-Effect Transistors (AREA)
  • Drying Of Semiconductors (AREA)
JP2008271153A 2007-10-25 2008-10-21 電界緩和プレートを有する高電子移動度トランジスタ半導体デバイスおよびその製造方法 Pending JP2009105405A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/976,590 US7800132B2 (en) 2007-10-25 2007-10-25 High electron mobility transistor semiconductor device having field mitigating plate and fabrication method thereof

Publications (2)

Publication Number Publication Date
JP2009105405A true JP2009105405A (ja) 2009-05-14
JP2009105405A5 JP2009105405A5 (enExample) 2012-02-16

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JP2008271153A Pending JP2009105405A (ja) 2007-10-25 2008-10-21 電界緩和プレートを有する高電子移動度トランジスタ半導体デバイスおよびその製造方法

Country Status (3)

Country Link
US (1) US7800132B2 (enExample)
JP (1) JP2009105405A (enExample)
DE (1) DE102008052595B4 (enExample)

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JP2011210754A (ja) * 2010-03-27 2011-10-20 Nec Corp 電界効果トランジスタ、電界効果トランジスタの製造方法、および電子装置
JP7156586B1 (ja) * 2022-03-17 2022-10-19 三菱電機株式会社 半導体装置の製造方法
US12166103B2 (en) 2020-05-13 2024-12-10 Nuvoton Technology Corporation Japan Semiconductor device for power amplification

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US8754496B2 (en) * 2009-04-14 2014-06-17 Triquint Semiconductor, Inc. Field effect transistor having a plurality of field plates
KR101632314B1 (ko) 2009-09-11 2016-06-22 삼성전자주식회사 전계 효과형 반도체 소자 및 그 제조 방법
US8541817B2 (en) * 2009-11-06 2013-09-24 Nitek, Inc. Multilayer barrier III-nitride transistor for high voltage electronics
DE102010016993A1 (de) 2010-05-18 2011-11-24 United Monolithic Semiconductors Gmbh Halbleiter-Bauelement
US8710511B2 (en) 2011-07-29 2014-04-29 Northrop Grumman Systems Corporation AIN buffer N-polar GaN HEMT profile
US8455312B2 (en) * 2011-09-12 2013-06-04 Cindy X. Qiu Fabrication methods for T-gate and inverted L-gate structure for high frequency devices and circuits
US8530978B1 (en) * 2011-12-06 2013-09-10 Hrl Laboratories, Llc High current high voltage GaN field effect transistors and method of fabricating same
JP6268366B2 (ja) * 2012-09-28 2018-01-31 パナソニックＩｐマネジメント株式会社 半導体装置
KR102065114B1 (ko) * 2013-03-14 2020-01-10 삼성전자주식회사 파워 소자의 전류 붕괴를 감소시키는 구동방법
US9048184B2 (en) * 2013-03-15 2015-06-02 Northrop Grumman Systems Corporation Method of forming a gate contact
JP2015195288A (ja) * 2014-03-31 2015-11-05 住友電工デバイス・イノベーション株式会社 半導体装置及び半導体装置の製造方法
US10276712B2 (en) 2014-05-29 2019-04-30 Hrl Laboratories, Llc III-nitride field-effect transistor with dual gates
JP6436531B2 (ja) * 2015-01-30 2018-12-12 住友電工デバイス・イノベーション株式会社 半導体装置の製造方法
CN106328703B (zh) * 2015-06-18 2019-07-19 台达电子工业股份有限公司 半导体装置
TWI626742B (zh) * 2015-06-18 2018-06-11 台達電子工業股份有限公司 半導體裝置
US9812532B1 (en) 2015-08-28 2017-11-07 Hrl Laboratories, Llc III-nitride P-channel transistor
EP3378097A4 (en) 2015-11-19 2019-09-11 HRL Laboratories, LLC III NITRIDE FIELD EFFECT TRANSISTOR WITH TWO GATES
DE102016123934A1 (de) * 2016-12-09 2018-06-14 United Monolithic Semiconductors Gmbh Verfahren zur Herstellung eines Transistors
JP6811737B2 (ja) * 2018-03-13 2021-01-13 株式会社東芝 半導体装置
JP2020150193A (ja) * 2019-03-15 2020-09-17 株式会社東芝 半導体装置
US11075271B2 (en) * 2019-10-14 2021-07-27 Cree, Inc. Stepped field plates with proximity to conduction channel and related fabrication methods
JP2025511661A (ja) * 2022-04-24 2025-04-16 華為技術有限公司 半導体デバイス及びその作製方法
US20240072130A1 (en) * 2022-08-29 2024-02-29 Raytheon Company T-gate transistor with mini field plate and angled gate stem
CN119153322B (zh) * 2024-11-11 2025-01-14 珠海镓未来科技有限公司 氮化镓半导体功率器件及其制作方法
CN120358772B (zh) * 2025-06-23 2025-10-14 山东大学 一种基于悬空栅工艺的氮化镓器件及其制造方法

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JP2007158256A (ja) * 2005-12-08 2007-06-21 Mitsubishi Electric Corp 半導体装置及び半導体装置の製造方法
JP2007250910A (ja) * 2006-03-16 2007-09-27 Matsushita Electric Ind Co Ltd 半導体装置

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Cited By (4)

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JP2011210754A (ja) * 2010-03-27 2011-10-20 Nec Corp 電界効果トランジスタ、電界効果トランジスタの製造方法、および電子装置
US12166103B2 (en) 2020-05-13 2024-12-10 Nuvoton Technology Corporation Japan Semiconductor device for power amplification
JP7156586B1 (ja) * 2022-03-17 2022-10-19 三菱電機株式会社 半導体装置の製造方法
WO2023175820A1 (ja) * 2022-03-17 2023-09-21 三菱電機株式会社 半導体装置の製造方法

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US20090108299A1 (en) 2009-04-30
US7800132B2 (en) 2010-09-21
DE102008052595B4 (de) 2011-05-12
DE102008052595A1 (de) 2009-04-30

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