DE102008046724B4 - Halbleitervorrichtung - Google Patents

Halbleitervorrichtung Download PDF

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Publication number
DE102008046724B4
DE102008046724B4 DE102008046724.3A DE102008046724A DE102008046724B4 DE 102008046724 B4 DE102008046724 B4 DE 102008046724B4 DE 102008046724 A DE102008046724 A DE 102008046724A DE 102008046724 B4 DE102008046724 B4 DE 102008046724B4
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Germany
Prior art keywords
layer
solder
semiconductor device
semiconductor element
compound
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DE102008046724.3A
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German (de)
English (en)
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DE102008046724A1 (de
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Osamu Ikeda
Masato Nakamura
Satoshi Matsuyoshi
Koji Sasaki
Shinji Hiramitsu
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Hitachi Power Semiconductor Device Ltd
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Hitachi Power Semiconductor Device Ltd
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CN102110605B (zh) * 2009-12-24 2012-06-06 北大方正集团有限公司 绝缘栅双极型晶体管芯片制造方法及装置
TWI476878B (zh) * 2012-05-10 2015-03-11 Univ Nat Chiao Tung 包含有具優選方向成長之CuSn晶粒之電性連接結構及其製備方法
JP5598592B2 (ja) * 2012-12-25 2014-10-01 三菱マテリアル株式会社 パワーモジュール
WO2014103955A1 (ja) * 2012-12-25 2014-07-03 三菱マテリアル株式会社 パワーモジュール
US9676047B2 (en) 2013-03-15 2017-06-13 Samsung Electronics Co., Ltd. Method of forming metal bonding layer and method of manufacturing semiconductor light emitting device using the same
DE102017119346A1 (de) 2017-08-24 2019-02-28 Osram Opto Semiconductors Gmbh Bauteil mit Pufferschicht und Verfahren zur Herstellung eines Bauteils
DE102017119344A1 (de) * 2017-08-24 2019-02-28 Osram Opto Semiconductors Gmbh Träger und Bauteil mit Pufferschicht sowie Verfahren zur Herstellung eines Bauteils
JP7180392B2 (ja) 2019-01-11 2022-11-30 株式会社デンソー 半導体装置及びその製造方法

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JPH03152945A (ja) * 1989-11-09 1991-06-28 Fuji Electric Co Ltd 半導体チップのワイヤボンディング方法
JPH07161877A (ja) * 1993-12-08 1995-06-23 Sanken Electric Co Ltd 半導体装置
JPH07221235A (ja) * 1994-02-04 1995-08-18 Sanken Electric Co Ltd 半導体装置
EP1065916A2 (en) * 1999-06-28 2001-01-03 Hitachi, Ltd. Resin sealed electronic device
JP2002142424A (ja) * 2000-11-02 2002-05-17 Hitachi Ltd 車両用交流発電機
JP2002261210A (ja) * 2001-02-28 2002-09-13 Hitachi Ltd 半導体装置
JP2002280417A (ja) * 2001-01-15 2002-09-27 Nec Corp 半導体装置及びその製造方法並びに半導体製造装置
JP2002359328A (ja) * 2001-03-29 2002-12-13 Hitachi Ltd 半導体装置
US20030132271A1 (en) * 2001-12-28 2003-07-17 Cheng-Heng Kao Method for controlling the formation of intermetallic compounds in solder joints
DE102004030056A1 (de) * 2003-06-23 2005-01-20 Denso Corp., Kariya Ausgeformte Halbleitervorrichtung und Verfahren zur Herstellung derselben
JP2005236019A (ja) * 2004-02-19 2005-09-02 Fuji Electric Holdings Co Ltd 半導体装置の製造方法
DE102005042780A1 (de) * 2004-09-08 2006-03-09 Denso Corp., Kariya Halbleiteranordnung mit einer Lotschicht auf Zinnbasis und Verfahren zum Herstellen derselben
JP2006066716A (ja) * 2004-08-27 2006-03-09 Fuji Electric Holdings Co Ltd 半導体装置
DE102005049575A1 (de) * 2004-10-18 2006-04-20 Denso Corp., Kariya Halbleitervorrichtung mit Aluminiumelektrode und Metallelektrode
US20060151889A1 (en) * 2005-01-07 2006-07-13 Ryouichi Kajiwara Semiconductor apparatus and manufacturing method

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JP4034107B2 (ja) * 2002-04-17 2008-01-16 株式会社ルネサステクノロジ 半導体装置
JP4275005B2 (ja) * 2004-05-24 2009-06-10 株式会社日立製作所 半導体装置
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Publication number Priority date Publication date Assignee Title
JPH03152945A (ja) * 1989-11-09 1991-06-28 Fuji Electric Co Ltd 半導体チップのワイヤボンディング方法
JPH07161877A (ja) * 1993-12-08 1995-06-23 Sanken Electric Co Ltd 半導体装置
JPH07221235A (ja) * 1994-02-04 1995-08-18 Sanken Electric Co Ltd 半導体装置
EP1065916A2 (en) * 1999-06-28 2001-01-03 Hitachi, Ltd. Resin sealed electronic device
JP2002142424A (ja) * 2000-11-02 2002-05-17 Hitachi Ltd 車両用交流発電機
JP2002280417A (ja) * 2001-01-15 2002-09-27 Nec Corp 半導体装置及びその製造方法並びに半導体製造装置
JP2002261210A (ja) * 2001-02-28 2002-09-13 Hitachi Ltd 半導体装置
JP2002359328A (ja) * 2001-03-29 2002-12-13 Hitachi Ltd 半導体装置
US20030132271A1 (en) * 2001-12-28 2003-07-17 Cheng-Heng Kao Method for controlling the formation of intermetallic compounds in solder joints
DE102004030056A1 (de) * 2003-06-23 2005-01-20 Denso Corp., Kariya Ausgeformte Halbleitervorrichtung und Verfahren zur Herstellung derselben
JP2005236019A (ja) * 2004-02-19 2005-09-02 Fuji Electric Holdings Co Ltd 半導体装置の製造方法
JP2006066716A (ja) * 2004-08-27 2006-03-09 Fuji Electric Holdings Co Ltd 半導体装置
DE102005042780A1 (de) * 2004-09-08 2006-03-09 Denso Corp., Kariya Halbleiteranordnung mit einer Lotschicht auf Zinnbasis und Verfahren zum Herstellen derselben
DE102005049575A1 (de) * 2004-10-18 2006-04-20 Denso Corp., Kariya Halbleitervorrichtung mit Aluminiumelektrode und Metallelektrode
US20060151889A1 (en) * 2005-01-07 2006-07-13 Ryouichi Kajiwara Semiconductor apparatus and manufacturing method

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