DE102006025162B3 - Flip-Chip-Bauelement und Verfahren zur Herstellung - Google Patents

Flip-Chip-Bauelement und Verfahren zur Herstellung Download PDF

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Publication number
DE102006025162B3
DE102006025162B3 DE102006025162A DE102006025162A DE102006025162B3 DE 102006025162 B3 DE102006025162 B3 DE 102006025162B3 DE 102006025162 A DE102006025162 A DE 102006025162A DE 102006025162 A DE102006025162 A DE 102006025162A DE 102006025162 B3 DE102006025162 B3 DE 102006025162B3
Authority
DE
Germany
Prior art keywords
component
support frame
chip
carrier substrate
bumps
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE102006025162A
Other languages
German (de)
English (en)
Inventor
Alois Stelzl
Christian Bauer
Hans Krüger
Robert Hammedinger
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SnapTrack Inc
Original Assignee
Epcos AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Epcos AG filed Critical Epcos AG
Priority to DE102006025162A priority Critical patent/DE102006025162B3/de
Priority to JP2009512410A priority patent/JP5220004B2/ja
Priority to PCT/DE2007/000970 priority patent/WO2007137568A1/de
Application granted granted Critical
Publication of DE102006025162B3 publication Critical patent/DE102006025162B3/de
Priority to US12/277,927 priority patent/US7673386B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/147—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being multilayered
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/141—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being on at least the sidewalls of the semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/144—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations comprising foils
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07221—Aligning
    • H10W72/07227—Aligning involving guiding structures, e.g. spacers or supporting members
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07231—Techniques
    • H10W72/07234—Using a reflow oven
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07231—Techniques
    • H10W72/07236—Soldering or alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07251—Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting
    • H10W72/07253—Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting changes in shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/231—Shapes
    • H10W72/234—Cross-sectional shape, i.e. in side view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241—Dispositions, e.g. layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/281—Auxiliary members
    • H10W72/285—Alignment aids, e.g. alignment marks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W99/00—Subject matter not provided for in other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
    • Y10T29/49144—Assembling to base an electrical component, e.g., capacitor, etc. by metal fusion
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155—Manufacturing circuit on or in base

Landscapes

  • Wire Bonding (AREA)
DE102006025162A 2006-05-30 2006-05-30 Flip-Chip-Bauelement und Verfahren zur Herstellung Expired - Fee Related DE102006025162B3 (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
DE102006025162A DE102006025162B3 (de) 2006-05-30 2006-05-30 Flip-Chip-Bauelement und Verfahren zur Herstellung
JP2009512410A JP5220004B2 (ja) 2006-05-30 2007-05-30 フリップチップ素子及びその製造方法
PCT/DE2007/000970 WO2007137568A1 (de) 2006-05-30 2007-05-30 Flip-chip-bauelement und verfahren zur herstellung
US12/277,927 US7673386B2 (en) 2006-05-30 2008-11-25 Flip-chip component production method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102006025162A DE102006025162B3 (de) 2006-05-30 2006-05-30 Flip-Chip-Bauelement und Verfahren zur Herstellung

Publications (1)

Publication Number Publication Date
DE102006025162B3 true DE102006025162B3 (de) 2008-01-31

Family

ID=38561994

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102006025162A Expired - Fee Related DE102006025162B3 (de) 2006-05-30 2006-05-30 Flip-Chip-Bauelement und Verfahren zur Herstellung

Country Status (4)

Country Link
US (1) US7673386B2 (https=)
JP (1) JP5220004B2 (https=)
DE (1) DE102006025162B3 (https=)
WO (1) WO2007137568A1 (https=)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008016487A1 (de) * 2008-03-31 2009-10-01 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils
DE102010032506A1 (de) 2010-07-28 2012-02-02 Epcos Ag Modul und Herstellungsverfahren
DE102010033551A1 (de) * 2010-08-05 2012-02-09 Epcos Ag Verfahren zur Herstellung einer Mehrzahl von elektronischen Bauelementen mit elektromagnetischer Schirmung und elektronisches Bauelement mit elektromagnetischer Schirmung
WO2012079927A1 (de) * 2010-12-16 2012-06-21 Epcos Ag Gehäustes elektrisches bauelement
DE102010056431A1 (de) * 2010-12-28 2012-06-28 Epcos Ag Bauelement und Verfahren zum Herstellen eines Bauelements
US8318540B2 (en) 2008-05-19 2012-11-27 Infineon Technologies Ag Method of manufacturing a semiconductor structure
US8558356B2 (en) 2007-04-30 2013-10-15 Epcos Ag Electrical Component
US9386734B2 (en) 2010-08-05 2016-07-05 Epcos Ag Method for producing a plurality of electronic devices
DE102015204698A1 (de) * 2015-03-16 2016-09-22 Disco Corporation Verfahren zum Teilen eines Wafers
DE102015122434A1 (de) * 2015-12-21 2017-06-22 Snaptrack, Inc. MEMS Bauelement
DE102012110188B4 (de) 2011-10-27 2019-07-18 Infineon Technologies Ag Elektronische Vorrichtung
DE102019115131A1 (de) * 2019-06-05 2020-12-10 RF360 Europe GmbH Elektrisches Bauteil, elektrische Vorrichtung und Verfahren zur Herstellung einer Vielzahl von elektrischen Bauteilen

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7608789B2 (en) * 2004-08-12 2009-10-27 Epcos Ag Component arrangement provided with a carrier substrate
DE102005008514B4 (de) * 2005-02-24 2019-05-16 Tdk Corporation Mikrofonmembran und Mikrofon mit der Mikrofonmembran
DE102005008512B4 (de) 2005-02-24 2016-06-23 Epcos Ag Elektrisches Modul mit einem MEMS-Mikrofon
DE102005008511B4 (de) * 2005-02-24 2019-09-12 Tdk Corporation MEMS-Mikrofon
DE102005009358B4 (de) * 2005-03-01 2021-02-04 Snaptrack, Inc. Lötfähiger Kontakt und ein Verfahren zur Herstellung
DE102005053767B4 (de) * 2005-11-10 2014-10-30 Epcos Ag MEMS-Mikrofon, Verfahren zur Herstellung und Verfahren zum Einbau
DE102005053765B4 (de) * 2005-11-10 2016-04-14 Epcos Ag MEMS-Package und Verfahren zur Herstellung
DE102007025992A1 (de) * 2007-06-04 2008-12-11 Epcos Ag Verfahren zur Herstellung eines MEMS-Packages
DE102009022901A1 (de) * 2009-05-27 2010-12-02 Osram Opto Semiconductors Gmbh Optoelektronisches Modul und Verfahren zur Herstellung eines optoelektronischen Moduls
TWI446464B (zh) * 2011-05-20 2014-07-21 旭德科技股份有限公司 封裝結構及其製作方法
DE102011112476A1 (de) * 2011-09-05 2013-03-07 Epcos Ag Bauelement und Verfahren zum Herstellen eines Bauelements
US8921946B2 (en) 2011-11-11 2014-12-30 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit resistor
US10123415B2 (en) * 2012-09-07 2018-11-06 Ngk Spark Plug Co., Ltd. Wiring substrate and production method therefor
DE102012216926A1 (de) * 2012-09-20 2014-03-20 Jumatech Gmbh Verfahren zur Herstellung eines Leiterplattenelements sowie Leiterplattenelement
US9207275B2 (en) * 2012-12-14 2015-12-08 International Business Machines Corporation Interconnect solder bumps for die testing
DE102013104407B4 (de) * 2013-04-30 2020-06-18 Tdk Corporation Auf Waferlevel herstellbares Bauelement und Verfahren zur Herstellung
DE102013106353B4 (de) * 2013-06-18 2018-06-28 Tdk Corporation Verfahren zum Aufbringen einer strukturierten Beschichtung auf ein Bauelement
DE102013215246A1 (de) * 2013-08-02 2015-02-05 Robert Bosch Gmbh Elektronikmodul mit Leiterplatten und anspritzbarem Kunststoff-Dichtring, insbesondere für ein Kfz-Getriebesteuergerät, und Verfahren zum Fertigen desselben
JP6368921B2 (ja) * 2013-10-01 2018-08-08 パナソニックＩｐマネジメント株式会社 半導体装置
US9971970B1 (en) * 2015-04-27 2018-05-15 Rigetti & Co, Inc. Microwave integrated quantum circuits with VIAS and methods for making the same
US11121301B1 (en) 2017-06-19 2021-09-14 Rigetti & Co, Inc. Microwave integrated quantum circuits with cap wafers and their methods of manufacture
US11244876B2 (en) 2019-10-09 2022-02-08 Microchip Technology Inc. Packaged semiconductor die with micro-cavity
CN110783304B (zh) * 2019-11-19 2025-12-30 广东气派科技有限公司 解决5G GaN芯片焊接高可靠性要求的封装焊接结构
US11855608B2 (en) 2020-04-06 2023-12-26 Rf360 Singapore Pte. Ltd. Systems and methods for packaging an acoustic device in an integrated circuit (IC)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4323799A1 (de) * 1992-07-15 1994-01-20 Toshiba Kawasaki Kk Halbleiteranordnung und Verfahren zu ihrer Herstellung
EP0896427A2 (en) * 1997-08-05 1999-02-10 Nec Corporation Surface acoustic wave device
DE19806818C1 (de) * 1998-02-18 1999-11-04 Siemens Matsushita Components Verfahren zur Herstellung eines elektronischen Bauelements, insbesondere eines mit akustischen Oberflächenwllen arbeitenden OFW-Bauelements
US6171887B1 (en) * 1996-02-28 2001-01-09 Kabushiki Kaisha Toshiba Semiconductor device for a face down bonding to a mounting substrate and a method of manufacturing the same
DE10238523A1 (de) * 2002-08-22 2004-03-04 Epcos Ag Verkapseltes elektronisches Bauelement und Verfahren zur Herstellung
US20040104460A1 (en) * 2002-03-22 2004-06-03 Stark David H. Wafer-level hermetic micro-device packages
US6982380B2 (en) * 2001-12-28 2006-01-03 Epcos Ag Encapsulated component which is small in terms of height and method for producing the same

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4748495A (en) * 1985-08-08 1988-05-31 Dypax Systems Corporation High density multi-chip interconnection and cooling package
US4788767A (en) * 1987-03-11 1988-12-06 International Business Machines Corporation Method for mounting a flexible film semiconductor chip carrier on a circuitized substrate
JPH0432251A (ja) * 1990-05-29 1992-02-04 Hitachi Ltd 半導体パッケージ及びその製造方法
US5186383A (en) * 1991-10-02 1993-02-16 Motorola, Inc. Method for forming solder bump interconnections to a solder-plated circuit trace
US5471887A (en) * 1994-02-01 1995-12-05 The Whitaker Corporation Removable sensor assembly
DE19617011C2 (de) * 1996-04-27 2000-11-02 Bruker Daltonik Gmbh Matrixkomponentengemisch für die matrixunterstützte Laserdesorption und Ionisierung sowie Verfahren zur Zubereitung eines Matrixkomponentengemisches
DE10253163B4 (de) * 2002-11-14 2015-07-23 Epcos Ag Bauelement mit hermetischer Verkapselung und Waferscale Verfahren zur Herstellung
DE10300958A1 (de) * 2003-01-13 2004-07-22 Epcos Ag Modul mit Verkapselung
DE10329329B4 (de) * 2003-06-30 2005-08-18 Siemens Ag Hochfrequenz-Gehäuse und Verfahren zu seiner Herstellung
DE102004020204A1 (de) * 2004-04-22 2005-11-10 Epcos Ag Verkapseltes elektrisches Bauelement und Verfahren zur Herstellung
JP3998658B2 (ja) * 2004-04-28 2007-10-31 富士通メディアデバイス株式会社 弾性波デバイスおよびパッケージ基板
JP4095049B2 (ja) * 2004-08-30 2008-06-04 シャープ株式会社 電極気密封止を用いた高信頼性半導体装置
US7545029B2 (en) * 2006-08-18 2009-06-09 Tessera, Inc. Stack microelectronic assemblies

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4323799A1 (de) * 1992-07-15 1994-01-20 Toshiba Kawasaki Kk Halbleiteranordnung und Verfahren zu ihrer Herstellung
US6171887B1 (en) * 1996-02-28 2001-01-09 Kabushiki Kaisha Toshiba Semiconductor device for a face down bonding to a mounting substrate and a method of manufacturing the same
EP0896427A2 (en) * 1997-08-05 1999-02-10 Nec Corporation Surface acoustic wave device
DE19806818C1 (de) * 1998-02-18 1999-11-04 Siemens Matsushita Components Verfahren zur Herstellung eines elektronischen Bauelements, insbesondere eines mit akustischen Oberflächenwllen arbeitenden OFW-Bauelements
US6982380B2 (en) * 2001-12-28 2006-01-03 Epcos Ag Encapsulated component which is small in terms of height and method for producing the same
US20040104460A1 (en) * 2002-03-22 2004-06-03 Stark David H. Wafer-level hermetic micro-device packages
DE10238523A1 (de) * 2002-08-22 2004-03-04 Epcos Ag Verkapseltes elektronisches Bauelement und Verfahren zur Herstellung

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8558356B2 (en) 2007-04-30 2013-10-15 Epcos Ag Electrical Component
DE102008016487A1 (de) * 2008-03-31 2009-10-01 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils
US8563998B2 (en) 2008-03-31 2013-10-22 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor component and method of producing an optoelectronic semiconductor component
US8318540B2 (en) 2008-05-19 2012-11-27 Infineon Technologies Ag Method of manufacturing a semiconductor structure
KR101917716B1 (ko) * 2010-07-28 2019-01-29 스냅트랙, 인코포레이티드 모듈 및 제조 방법
WO2012013416A1 (de) 2010-07-28 2012-02-02 Epcos Ag Modul und herstellungsverfahren
DE102010032506A1 (de) 2010-07-28 2012-02-02 Epcos Ag Modul und Herstellungsverfahren
KR20130136440A (ko) * 2010-07-28 2013-12-12 에프코스 아게 모듈 및 제조 방법
US9253886B2 (en) 2010-07-28 2016-02-02 Epcos Ag Module and production method
US9386734B2 (en) 2010-08-05 2016-07-05 Epcos Ag Method for producing a plurality of electronic devices
DE102010033551A1 (de) * 2010-08-05 2012-02-09 Epcos Ag Verfahren zur Herstellung einer Mehrzahl von elektronischen Bauelementen mit elektromagnetischer Schirmung und elektronisches Bauelement mit elektromagnetischer Schirmung
WO2012079927A1 (de) * 2010-12-16 2012-06-21 Epcos Ag Gehäustes elektrisches bauelement
US9844128B2 (en) 2010-12-16 2017-12-12 Snaptrack, Inc. Cased electrical component
DE102010056431A1 (de) * 2010-12-28 2012-06-28 Epcos Ag Bauelement und Verfahren zum Herstellen eines Bauelements
US9006868B2 (en) 2010-12-28 2015-04-14 Epcos Ag Encapsulation of an MEMS component and a method for producing said component
DE102010056431B4 (de) * 2010-12-28 2012-09-27 Epcos Ag Bauelement und Verfahren zum Herstellen eines Bauelements
DE102012110188B4 (de) 2011-10-27 2019-07-18 Infineon Technologies Ag Elektronische Vorrichtung
DE102015204698A1 (de) * 2015-03-16 2016-09-22 Disco Corporation Verfahren zum Teilen eines Wafers
US10784164B2 (en) 2015-03-16 2020-09-22 Disco Corporation Method of dividing wafer
DE102015204698B4 (de) 2015-03-16 2023-07-20 Disco Corporation Verfahren zum Teilen eines Wafers
DE102015122434A1 (de) * 2015-12-21 2017-06-22 Snaptrack, Inc. MEMS Bauelement
DE102019115131A1 (de) * 2019-06-05 2020-12-10 RF360 Europe GmbH Elektrisches Bauteil, elektrische Vorrichtung und Verfahren zur Herstellung einer Vielzahl von elektrischen Bauteilen

Also Published As

Publication number Publication date
US7673386B2 (en) 2010-03-09
JP2009539235A (ja) 2009-11-12
JP5220004B2 (ja) 2013-06-26
US20090071710A1 (en) 2009-03-19
WO2007137568A1 (de) 2007-12-06

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